DE69928061T2 - Halbleiter-beschleunigungssensor mit selbstdiagnose - Google Patents
Halbleiter-beschleunigungssensor mit selbstdiagnose Download PDFInfo
- Publication number
- DE69928061T2 DE69928061T2 DE69928061T DE69928061T DE69928061T2 DE 69928061 T2 DE69928061 T2 DE 69928061T2 DE 69928061 T DE69928061 T DE 69928061T DE 69928061 T DE69928061 T DE 69928061T DE 69928061 T2 DE69928061 T2 DE 69928061T2
- Authority
- DE
- Germany
- Prior art keywords
- acceleration sensor
- semiconductor acceleration
- weight
- contact
- section
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000001133 acceleration Effects 0.000 title claims description 85
- 239000004065 semiconductor Substances 0.000 title claims description 63
- 238000004092 self-diagnosis Methods 0.000 title claims description 17
- 238000000034 method Methods 0.000 claims description 5
- 238000010586 diagram Methods 0.000 description 20
- 238000004519 manufacturing process Methods 0.000 description 16
- 230000000694 effects Effects 0.000 description 11
- 238000007789 sealing Methods 0.000 description 6
- 238000013016 damping Methods 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 239000012530 fluid Substances 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000002655 kraft paper Substances 0.000 description 3
- 238000001771 vacuum deposition Methods 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 230000002457 bidirectional effect Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000003111 delayed effect Effects 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 238000010025 steaming Methods 0.000 description 2
- 238000007738 vacuum evaporation Methods 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 229920000297 Rayon Polymers 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000002405 diagnostic procedure Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 230000002996 emotional effect Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000010363 phase shift Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H35/00—Switches operated by change of a physical condition
- H01H35/14—Switches operated by change of acceleration, e.g. by shock or vibration, inertia switch
- H01H35/141—Details
- H01H35/142—Damping means to avoid unwanted response
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P15/0802—Details
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P15/135—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by making use of contacts which are actuated by a movable inertial mass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H1/00—Contacts
- H01H1/0015—Means for testing or for inspecting contacts, e.g. wear indicator
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H1/00—Contacts
- H01H1/0036—Switches making use of microelectromechanical systems [MEMS]
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Pressure Sensors (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3730398 | 1998-02-19 | ||
| JP10037303A JPH11237402A (ja) | 1998-02-19 | 1998-02-19 | 半導体加速度センサ及びその自己診断法 |
| PCT/JP1999/000725 WO1999042843A1 (en) | 1998-02-19 | 1999-02-18 | Semiconductor acceleration sensor and self-diagnosis thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE69928061D1 DE69928061D1 (de) | 2005-12-08 |
| DE69928061T2 true DE69928061T2 (de) | 2006-04-20 |
Family
ID=12493945
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE69928061T Expired - Fee Related DE69928061T2 (de) | 1998-02-19 | 1999-02-18 | Halbleiter-beschleunigungssensor mit selbstdiagnose |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US6230564B1 (https=) |
| EP (1) | EP0997737B1 (https=) |
| JP (1) | JPH11237402A (https=) |
| DE (1) | DE69928061T2 (https=) |
| WO (1) | WO1999042843A1 (https=) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102006043512A1 (de) * | 2006-05-22 | 2007-11-29 | Continental Teves Ag & Co. Ohg | Beschleunigungsschalter |
| DE102008043753B4 (de) | 2008-11-14 | 2022-06-02 | Robert Bosch Gmbh | Sensoranordnung und Verfahren zum Betrieb einer Sensoranordnung |
| DE102009000407B4 (de) | 2009-01-26 | 2022-09-08 | Robert Bosch Gmbh | Sensorvorrichtung und Herstellungsverfahren für eine Sensorvorrichtung |
| US11459226B2 (en) | 2017-01-27 | 2022-10-04 | Mitsubishi Electric Corporation | Semiconductor device and semiconductor device manufacturing method |
| DE102014210852B4 (de) | 2014-06-06 | 2022-10-06 | Robert Bosch Gmbh | Bauteil mit zwei Halbleiter-Bauelementen, die über eine strukturierte Bond-Verbindungsschicht miteinander verbunden sind, und Verfahren zum Herstellen eines solchen Bauteils |
Families Citing this family (41)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6685844B2 (en) * | 2001-02-14 | 2004-02-03 | Delphi Technologies, Inc. | Deep reactive ion etching process and microelectromechanical devices formed thereby |
| JPWO2002103368A1 (ja) * | 2001-06-13 | 2004-10-07 | 三菱電機株式会社 | シリコンデバイス |
| WO2003044539A1 (en) * | 2001-11-19 | 2003-05-30 | Mitsubishi Denki Kabushiki Kaisha | Acceleration sensor |
| FR2861464B1 (fr) * | 2003-10-28 | 2006-02-17 | Commissariat Energie Atomique | Detecteur de mouvement a six degres de liberte avec trois capteurs de position et procede de fabrication d'un capteur |
| US6981416B2 (en) * | 2003-11-21 | 2006-01-03 | Chung-Shan Institute Of Science And Technology | Multi-axis solid state accelerometer |
| JP2008008820A (ja) * | 2006-06-30 | 2008-01-17 | Hitachi Ltd | 慣性センサおよびその製造方法 |
| US8250921B2 (en) | 2007-07-06 | 2012-08-28 | Invensense, Inc. | Integrated motion processing unit (MPU) with MEMS inertial sensing and embedded digital electronics |
| US8047075B2 (en) * | 2007-06-21 | 2011-11-01 | Invensense, Inc. | Vertically integrated 3-axis MEMS accelerometer with electronics |
| US20090265671A1 (en) * | 2008-04-21 | 2009-10-22 | Invensense | Mobile devices with motion gesture recognition |
| US8462109B2 (en) * | 2007-01-05 | 2013-06-11 | Invensense, Inc. | Controlling and accessing content using motion processing on mobile devices |
| US8952832B2 (en) * | 2008-01-18 | 2015-02-10 | Invensense, Inc. | Interfacing application programs and motion sensors of a device |
| US20090262074A1 (en) * | 2007-01-05 | 2009-10-22 | Invensense Inc. | Controlling and accessing content using motion processing on mobile devices |
| US20100071467A1 (en) * | 2008-09-24 | 2010-03-25 | Invensense | Integrated multiaxis motion sensor |
| US8508039B1 (en) | 2008-05-08 | 2013-08-13 | Invensense, Inc. | Wafer scale chip scale packaging of vertically integrated MEMS sensors with electronics |
| US8020441B2 (en) * | 2008-02-05 | 2011-09-20 | Invensense, Inc. | Dual mode sensing for vibratory gyroscope |
| US7934423B2 (en) * | 2007-12-10 | 2011-05-03 | Invensense, Inc. | Vertically integrated 3-axis MEMS angular accelerometer with integrated electronics |
| US7796872B2 (en) * | 2007-01-05 | 2010-09-14 | Invensense, Inc. | Method and apparatus for producing a sharp image from a handheld device containing a gyroscope |
| US8141424B2 (en) * | 2008-09-12 | 2012-03-27 | Invensense, Inc. | Low inertia frame for detecting coriolis acceleration |
| ITTO20070033A1 (it) * | 2007-01-19 | 2008-07-20 | St Microelectronics Srl | Dispositivo microelettromeccanico ad asse z con struttura di arresto perfezionata |
| JP5165294B2 (ja) * | 2007-07-06 | 2013-03-21 | 三菱電機株式会社 | 静電容量式加速度センサ |
| US8624844B2 (en) | 2008-04-01 | 2014-01-07 | Litl Llc | Portable computer with multiple display configurations |
| US9003315B2 (en) | 2008-04-01 | 2015-04-07 | Litl Llc | System and method for streamlining user interaction with electronic content |
| US8612888B2 (en) | 2008-04-01 | 2013-12-17 | Litl, Llc | Method and apparatus for managing digital media content |
| DE102008042366A1 (de) * | 2008-09-25 | 2010-04-01 | Robert Bosch Gmbh | Sensor und Verfahren zur Herstellung eines Sensors |
| US7999201B2 (en) * | 2008-11-06 | 2011-08-16 | Shandong Gettop Acoustic Co. Ltd. | MEMS G-switch device |
| DE102009029095B4 (de) * | 2009-09-02 | 2017-05-18 | Robert Bosch Gmbh | Mikromechanisches Bauelement |
| US9097524B2 (en) | 2009-09-11 | 2015-08-04 | Invensense, Inc. | MEMS device with improved spring system |
| US8534127B2 (en) | 2009-09-11 | 2013-09-17 | Invensense, Inc. | Extension-mode angular velocity sensor |
| JP5400560B2 (ja) * | 2009-10-16 | 2014-01-29 | アズビル株式会社 | 静電容量型センサ |
| JP2013007653A (ja) * | 2011-06-24 | 2013-01-10 | Nippon Dempa Kogyo Co Ltd | 外力検出装置及び外力検出センサー |
| US9134337B2 (en) * | 2012-12-17 | 2015-09-15 | Maxim Integrated Products, Inc. | Microelectromechanical z-axis out-of-plane stopper |
| US20160084870A1 (en) * | 2013-04-26 | 2016-03-24 | Panasonic Intellectual Property Management Co., Ltd. | Sensor |
| US9837935B2 (en) * | 2013-10-29 | 2017-12-05 | Honeywell International Inc. | All-silicon electrode capacitive transducer on a glass substrate |
| CN105776121A (zh) * | 2014-12-22 | 2016-07-20 | 立锜科技股份有限公司 | 微机电系统芯片 |
| US20170023606A1 (en) * | 2015-07-23 | 2017-01-26 | Freescale Semiconductor, Inc. | Mems device with flexible travel stops and method of fabrication |
| EP3147258A1 (en) * | 2015-09-22 | 2017-03-29 | AT & S Austria Technologie & Systemtechnik Aktiengesellschaft | Connection panel for electronic components |
| JP6430355B2 (ja) * | 2015-10-16 | 2018-11-28 | 株式会社東芝 | センサ装置 |
| US10239746B2 (en) * | 2016-11-11 | 2019-03-26 | Analog Devices, Inc. | Vertical stopper for capping MEMS devices |
| EP4002407A1 (de) * | 2020-11-24 | 2022-05-25 | Siemens Aktiengesellschaft | Mikroelektromechanisches schaltelement, vorrichtung und herstellungsverfahren |
| CN113820515B (zh) * | 2021-01-29 | 2023-06-23 | 曲靖师范学院 | 一种全向微流体惯性阈值加速度计 |
| US12325628B2 (en) * | 2021-05-25 | 2025-06-10 | Stmicroelectronics S.R.L. | Microelectromechanical device with out-of-plane stopper structure |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4543457A (en) * | 1984-01-25 | 1985-09-24 | Transensory Devices, Inc. | Microminiature force-sensitive switch |
| JPH0623782B2 (ja) * | 1988-11-15 | 1994-03-30 | 株式会社日立製作所 | 静電容量式加速度センサ及び半導体圧力センサ |
| US5025119A (en) * | 1990-04-23 | 1991-06-18 | Hughes Aircraft Company | One-time-close relay useful in spacecraft power systems |
| EP0459723B1 (en) * | 1990-05-30 | 1996-01-17 | Hitachi, Ltd. | Semiconductor acceleration sensor and vehicle control system using the same |
| JP2786321B2 (ja) * | 1990-09-07 | 1998-08-13 | 株式会社日立製作所 | 半導体容量式加速度センサ及びその製造方法 |
| JPH04127574U (ja) | 1991-05-15 | 1992-11-20 | センサー・テクノロジー株式会社 | 衝突センサ |
| JPH04136575U (ja) | 1991-06-11 | 1992-12-18 | ジエコー株式会社 | 加速度センサ |
| US5177331A (en) * | 1991-07-05 | 1993-01-05 | Delco Electronics Corporation | Impact detector |
| JP2728807B2 (ja) * | 1991-07-24 | 1998-03-18 | 株式会社日立製作所 | 静電容量式加速度センサ |
| JP2936990B2 (ja) * | 1993-12-29 | 1999-08-23 | 日産自動車株式会社 | 加速度センサ |
| DE4411130A1 (de) * | 1994-03-30 | 1995-10-05 | Siemens Ag | Sensoreinheit mit mindestens einem Beschleunigungssensor, z. B. zur Kfz-Airbagauslösung, und Verfahren zu seiner Herstellung |
| JP3355916B2 (ja) * | 1996-04-01 | 2002-12-09 | 株式会社日立製作所 | マイクロｇスイッチ |
| JPH1068742A (ja) * | 1996-08-27 | 1998-03-10 | Akebono Brake Ind Co Ltd | 加速度スイッチおよび加速度スイッチの製造方法ならびに加速度スイッチを用いた加速度センサー |
| JPH10132850A (ja) * | 1996-10-28 | 1998-05-22 | Akebono Brake Ind Co Ltd | 半導体加速度センサー |
| JPH10132848A (ja) * | 1996-10-31 | 1998-05-22 | Akebono Brake Ind Co Ltd | 半導体加速度センサー |
-
1998
- 1998-02-19 JP JP10037303A patent/JPH11237402A/ja active Pending
-
1999
- 1999-02-18 EP EP99905235A patent/EP0997737B1/en not_active Expired - Lifetime
- 1999-02-18 US US09/367,312 patent/US6230564B1/en not_active Expired - Fee Related
- 1999-02-18 DE DE69928061T patent/DE69928061T2/de not_active Expired - Fee Related
- 1999-02-18 WO PCT/JP1999/000725 patent/WO1999042843A1/ja not_active Ceased
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102006043512A1 (de) * | 2006-05-22 | 2007-11-29 | Continental Teves Ag & Co. Ohg | Beschleunigungsschalter |
| DE102008043753B4 (de) | 2008-11-14 | 2022-06-02 | Robert Bosch Gmbh | Sensoranordnung und Verfahren zum Betrieb einer Sensoranordnung |
| DE102009000407B4 (de) | 2009-01-26 | 2022-09-08 | Robert Bosch Gmbh | Sensorvorrichtung und Herstellungsverfahren für eine Sensorvorrichtung |
| DE102014210852B4 (de) | 2014-06-06 | 2022-10-06 | Robert Bosch Gmbh | Bauteil mit zwei Halbleiter-Bauelementen, die über eine strukturierte Bond-Verbindungsschicht miteinander verbunden sind, und Verfahren zum Herstellen eines solchen Bauteils |
| US11459226B2 (en) | 2017-01-27 | 2022-10-04 | Mitsubishi Electric Corporation | Semiconductor device and semiconductor device manufacturing method |
| DE102017219640B4 (de) | 2017-01-27 | 2023-04-20 | Mitsubishi Electric Corporation | Halbleitervorrichtung und Herstellungsverfahren für eine Halbleitervorrichtung |
Also Published As
| Publication number | Publication date |
|---|---|
| EP0997737A4 (en) | 2002-04-03 |
| JPH11237402A (ja) | 1999-08-31 |
| US6230564B1 (en) | 2001-05-15 |
| WO1999042843A1 (en) | 1999-08-26 |
| EP0997737B1 (en) | 2005-11-02 |
| EP0997737A1 (en) | 2000-05-03 |
| DE69928061D1 (de) | 2005-12-08 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE69928061T2 (de) | Halbleiter-beschleunigungssensor mit selbstdiagnose | |
| DE102012206854B4 (de) | Hybrid integriertes Bauteil und Verfahren zu dessen Herstellung | |
| DE102012208032B4 (de) | Hybrid integriertes Bauteil mit MEMS-Bauelement und ASIC-Bauelement | |
| EP0623824B1 (de) | Mikromechanische Beschleunigungsmessvorrichtung und Verfahren zu deren Herstellung | |
| DE102006011545B4 (de) | Mikromechanisches Kombi-Bauelement und entsprechendes Herstellungsverfahren | |
| DE69313716T2 (de) | Gegen Überdruck geschützter kapazitiver Differenzdruckwandler aus Polysilizium und Verfahren zu seiner Herstellung | |
| DE69925803T2 (de) | Mikromechanischer halbleiter-beschleunigungssensor | |
| EP0138893B1 (de) | Kapazitiver drucksensor | |
| EP0732594B1 (de) | Verfahren zur Herstellung mikromechanischer Bauelemente | |
| DE69013540T2 (de) | Kapazitiver Beschleunigungsmesser mit Prüfmasse in der Mittelebene. | |
| DE69807876T2 (de) | Kapazitiver druckwandler mit verbessertem elektrodenträger | |
| EP0189492B1 (de) | Messwandlereinsatz, Verfahren zu seiner Herstellung und Verwendung für einen Aufnehmer zur Messung mechanischer Grössen | |
| DE19921863A1 (de) | Halbleitersensor für eine dynamische Größe mit Elektroden in einer Rahmenstruktur | |
| DE102004027501A1 (de) | Mikromechanisches Bauelement mit mehreren Kavernen und Herstellungsverfahren | |
| DE19709731A1 (de) | Elektrostatisch-kapazitiver Beschleunigungssensor | |
| DE102013217726A1 (de) | Mikromechanisches Bauteil für eine kapazitive Sensorvorrichtung und Herstellungsverfahren für ein mikromechanisches Bauteil für eine kapazitive Sensorvorrichtung | |
| DE3941780C2 (de) | Druckschalter, insbesondere für eine Warnvorrichtung für Druckverlust in Fahrzeugreifen | |
| WO2003067646A2 (de) | Halbleitersubstrat mit einem elektrisch isolierten bereich, insbesondere zur vertikalintegration | |
| DE10333559A1 (de) | Kapazitiver Sensor für eine dynamische Größe, Verfahren zur Herstellung eines kapazitiven Sensors für eine dynamische Größe und Detektor mit einem kapazitiven Sensor für eine dynamische Größe | |
| DE4441903C1 (de) | Drucksensor | |
| DE19539178B4 (de) | Halbleiterbeschleunigungssensor und Verfahren zu seiner Herstellung | |
| DE4414970C2 (de) | Mikromechanisches Bauteil mit einem Schaltelement als beweglicher Struktur, Mikrosystem und Herstellverfahren | |
| EP0710843A1 (de) | Kapazitiver Beschleunigungssensor | |
| DE102009026738A1 (de) | Mikromechanischer Beschleunigungssensor und Verfahren zur Herstellung eines Beschleunigungssensors | |
| DE10036438A1 (de) | Druckschalter |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |