WO1999042843A1 - Semiconductor acceleration sensor and self-diagnosis thereof - Google Patents

Semiconductor acceleration sensor and self-diagnosis thereof Download PDF

Info

Publication number
WO1999042843A1
WO1999042843A1 PCT/JP1999/000725 JP9900725W WO9942843A1 WO 1999042843 A1 WO1999042843 A1 WO 1999042843A1 JP 9900725 W JP9900725 W JP 9900725W WO 9942843 A1 WO9942843 A1 WO 9942843A1
Authority
WO
WIPO (PCT)
Prior art keywords
acceleration sensor
semiconductor acceleration
substrate
contact portion
weight body
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP1999/000725
Other languages
English (en)
French (fr)
Japanese (ja)
Inventor
Masayoshi Esashi
Tadao Matsunaga
Takashi Kunimi
Masahiro Nezu
Masatomo Mori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Akebono Brake Industry Co Ltd
Original Assignee
Akebono Brake Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Akebono Brake Industry Co Ltd filed Critical Akebono Brake Industry Co Ltd
Priority to DE69928061T priority Critical patent/DE69928061T2/de
Priority to EP99905235A priority patent/EP0997737B1/en
Priority to US09/367,312 priority patent/US6230564B1/en
Publication of WO1999042843A1 publication Critical patent/WO1999042843A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H35/00—Switches operated by change of a physical condition
    • H01H35/14—Switches operated by change of acceleration, e.g. by shock or vibration, inertia switch
    • H01H35/141—Details
    • H01H35/142—Damping means to avoid unwanted response
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/0802—Details
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/135—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by making use of contacts which are actuated by a movable inertial mass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H1/00—Contacts
    • H01H1/0015—Means for testing or for inspecting contacts, e.g. wear indicator
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H1/00—Contacts
    • H01H1/0036—Switches making use of microelectromechanical systems [MEMS]

Definitions

  • the present invention relates to a semiconductor acceleration sensor and a self-diagnosis method thereof, and more particularly to a semiconductor acceleration sensor using a squeezed film effect and a self-diagnosis method thereof.
  • an acceleration sensor a ball (iron ball or the like) is used, and when an acceleration exceeding a predetermined value is received, the ball moves and is detected by switching, or a sensor using a mercury switch is known.
  • a sensor using a mercury switch See Japanese Utility Model Application Laid-Open No. 4-136765, Japanese Utility Model Application Laid-Open No. 1-127574, etc.). Since these acceleration sensors have a large external shape and a large number of structural components, it is necessary to secure a special place for mounting the acceleration sensor, and the cost is high.
  • the present invention provides a semiconductor acceleration sensor that is small, lightweight, easy to manufacture, low-cost, high-precision, and has a stable operation by maintaining the switch 0 N time for a certain period of time. Disclosure of the invention
  • the present invention relates to a semiconductor acceleration sensor in which a central substrate having a central contact portion and an outer substrate having at least one outer contact portion are stacked, wherein the central substrate has a weight body near the central contact portion.
  • the outer substrate having the outer contact portion is a semiconductor acceleration sensor having a weight body facing portion facing the weight body.
  • the present invention is the semiconductor acceleration sensor, wherein the weight body exhibits a squeezed damping effect with the weight body facing portion.
  • the present invention is the semiconductor acceleration sensor, wherein the weight has a central electrode portion, and the weight opposing portion has an outer electrode portion.
  • the present invention relates to a self-diagnosis method for diagnosing the semiconductor acceleration sensor, This is a self-diagnosis method for a semiconductor acceleration sensor that performs a self-diagnosis by applying a voltage to the center electrode portion and the outer electrode portion.
  • the present invention provides a semiconductor acceleration sensor in which a central substrate having a central contact portion and an outer substrate having at least one outer contact portion are laminated, wherein the central contact portion and the outer contact portion are welded when they come into contact with each other.
  • Semiconductor acceleration sensor in which a central substrate having a central contact portion and an outer substrate having at least one outer contact portion are laminated, wherein the central contact portion and the outer contact portion are welded when they come into contact with each other.
  • FIG. 1 is an explanatory diagram of a semiconductor acceleration sensor according to a first embodiment.
  • FIG. 2 is a diagram illustrating the operation of the semiconductor acceleration sensor according to the first embodiment.
  • FIG. 3 is a diagram illustrating the operation of the semiconductor acceleration sensor according to the first embodiment.
  • FIG. 4 is a diagram illustrating the bidirectional operation of the semiconductor acceleration sensor according to the first embodiment.
  • FIG. 5 is an explanatory diagram of a manufacturing process of the central substrate of the semiconductor acceleration sensor according to the first embodiment.
  • Fig. 6 is an explanatory diagram of the manufacturing process of the central substrate (first layer) of the semiconductor acceleration sensor of the first embodiment.
  • FIG. 7 is an explanatory view of a manufacturing process of an outer substrate (third layer) of the semiconductor acceleration sensor of the first embodiment.
  • FIG. 8 is an explanatory view of an assembling process of the semiconductor acceleration sensor of the first embodiment.
  • FIG. 9 is an explanatory diagram of a semiconductor acceleration sensor according to the second embodiment.
  • FIG. 10 is an explanatory diagram of the operation of the semiconductor acceleration sensor according to the third embodiment. BEST MODE FOR CARRYING OUT THE INVENTION
  • FIG. 1 is an explanatory diagram of the semiconductor acceleration sensor according to the first embodiment.
  • FIG. 2 is an explanatory diagram of the operation of the semiconductor acceleration sensor according to the first embodiment.
  • FIG. 3 is an explanatory diagram of the operation of the semiconductor acceleration sensor according to the first embodiment.
  • FIG. 4 is a diagram illustrating the bidirectional operation of the semiconductor acceleration sensor according to the first embodiment.
  • FIG. 5 is an explanatory diagram of a manufacturing process of the center substrate of the semiconductor acceleration sensor according to the first embodiment.
  • FIG. 6 is an explanatory diagram of a manufacturing process of the outer substrate (first layer) of the semiconductor acceleration sensor according to the first embodiment.
  • FIG. 7 shows the outer substrate of the semiconductor acceleration sensor according to the first embodiment.
  • FIG. 8 is an explanatory view of a (third layer) manufacturing process.
  • FIG. 8 is an explanatory diagram of an assembling process of the semiconductor acceleration sensor according to the first embodiment.
  • FIG. 9 is an explanatory diagram of the semiconductor acceleration sensor according to the second embodiment.
  • FIG. 10 is an explanatory diagram of the operation of the semiconductor acceleration sensor according to the third embodiment.
  • Example 1 will be described with reference to FIGS. 1 to 8.
  • the semiconductor acceleration sensor of the present embodiment detects whether or not the acceleration in the stacking direction of the stacked body is equal to or higher than a predetermined value.
  • the central substrate 1 is made of, for example, Si, and has a central contact portion 11, a polymer body 12, and a central terminal portion 13.
  • the outer substrates 2a and 2b are made of, for example, Si, and the outer contact portions 21a and 21b, the weight opposing portions 22a and 22b and the outer terminal portions 23a and 23b are formed.
  • the center substrate 1 has a height 1 2 so that the height of the center contact portion 1 1 is higher than that of the weight body 1 2, and the area of the center contact portion 1 1 is smaller than that of the weight body 1 2. Grooves, holes, etc. are formed by etching or the like.
  • the weight body 12 has, for example, a 0-shape, and is provided near the center contact portion 11.
  • the outer contact part 21 and the weight opposing part 22 face the center contact part 11 and the weight body 12, and the weight opposing part 22 is provided with a stono, ° 24. Have been.
  • the outer contact portions 2 la and 21 b are formed on both the outer substrates 2 a and 2 b and are vertically symmetrical, but may be formed on only one of them.
  • the sensor substrate 4 is formed between the central substrate 1 and the outer substrates 2a, 2b at predetermined intervals by sealing insulating portions 3a, 3 and sealed.
  • the sensor space 4 is filled with a gas, for example, nitrogen, an inert gas, or the like, and is adjusted to a predetermined pressure.
  • the central contact part 11 and the outer contact part 21 are respectively composed of a central wiring part formed on the weight body 12 and an outer wiring part 26 formed on the weight body facing part 22 and a central terminal. It is drawn out of the semiconductor acceleration sensor via the section 13 and the outer terminal section 23, and is connected to an external circuit device (not shown). A method of detecting acceleration by the semiconductor acceleration sensor according to the present embodiment will be described.
  • the center contact portion 11 and the weight body 12 move by receiving the force of the acceleration, and contact the outer contact portion 21 when the force exceeds a predetermined value. ( Therefore, conduction between the central wiring portion and the outer wiring portion 26 can be determined by an external circuit device. As a result, it can be seen that an acceleration of a predetermined value or more has acted on the semiconductor acceleration sensor. Then, when the value of the acceleration becomes equal to or less than the predetermined value, the center contact portion 11 separates from the outer contact portion 21. However, in the present embodiment, since the weight body 12 is provided near the center contact portion 11, the weight body 12 also moves in the stacking direction by the force of the acceleration, and the weight of the outer substrate 2 is reduced.
  • the stove 24 has a predetermined distance from the weight body facing portion 22. Then, when the acceleration decreases, the contact between the weight body 12 and the stopper 24 does not come away immediately because of the effect of squeezed damping, so that the weight body 12 is located near the weight body 12. One central contact 1 1 does not immediately leave the outer contact 2 1. For this reason, the conduction time in the semiconductor acceleration sensor can be extended for the external circuit device.
  • the squeezed damping effect can be set according to the area of the weight body facing portion 22, the height of the stopper 24, and the pressure of the sensor space 4.
  • the center contact portion 11 is higher than the weight body 12 and that grooves, holes, and the like are processed by etching or the like or the surface is reduced so that the squeezed dumming effect is small. . (Thus, it cannot be turned ON or OFF without a certain impulse.)
  • the squeezed damping (squeezed film) effect is explained.
  • Micron-order devices and systems may be affected by the properties of the fluid in the micro flow path, and if the flow path is narrow, the surface area will be larger than the volume. It is necessary to consider the force and the viscosity of the existing fluid itself.
  • u variability coefficient
  • s area
  • V speed
  • d distance
  • the weight body 12 also contacts the stop 24. Due to the stop 24, the weight body 12 and the weight body facing portion 22 have a predetermined space.
  • the weight body 12 and the center contact part 11 are separated from the weight body facing part 22 and the outer contact part 21. After leaving, the switch becomes OF F.
  • a vertically symmetric semiconductor acceleration sensor can detect that acceleration is applied in either direction of the stacking direction of the stacked body. It can and receiving the acceleration as shown in FIG. 4, and for the acceleration values at t 2 is less than the predetermined value, switch the semiconductor acceleration sensor is not turned ON. switch is turned ON in the upward direction at t 3, next switch in t 4 is ⁇ _FF, switch is turned ON in the downward direction at t 5, the Suitsuchi at t s becomes OF F.
  • a Si substrate is prepared (Fig. 5a), the center contact portion 1 is formed by etching or the like, and the weight body 12 is processed into a predetermined shape (Fig. 5b). These are formed by evaporation, spattering, etc., to form the central substrate 1 (Fig. 5c).
  • a Si substrate is prepared (FIG. 6a), and a layer of SiO 2 , glass or the like is formed thereon by sputtering or evaporation, and a sealing insulating portion 3a is formed by photolithography (FIG. 6b). .
  • a through hole 25 a of the wiring in E T suchingu like, at S i 0 2 or the like, provided Sutotsuba 24 a (FIG. 6 c).
  • A1, Au, etc. are vapor-deposited, the outer terminal 23a is formed by spattering, etc., to form the outer substrate (first layer) 2a (Fig. 6d).
  • Outer board (third layer) 2b, center board 1, outer board (first layer) 2a (FIG. 8A), and bonding is performed using the sealing insulating portions 3a and 3b by anodic bonding (FIG. 8B).
  • the semiconductor acceleration sensor can be assembled by dicing, wire-bonding the wiring to the terminal sections 1323a and 23b, and caging (Fig. 8c).
  • the semiconductor acceleration sensor of the present embodiment includes a central substrate 1 and outer substrates 2a and 2b that constitute a laminate.
  • the weight body 12 becomes the central electrode portion, and the outer substrates 2a and 2b are different.
  • the outer substrates 2a and 2b of the present embodiment are made of an insulating material such as glass, and holes 25a formed in the substrate 2 as wiring to the outer terminal portions 23a and 23b. , 25b are formed with outer wiring portions 26a, 26b using conductive epoxy or the like.
  • the semiconductor acceleration sensor of this embodiment has a self-diagnosis electrode section 27a, 27b and a self-diagnosis wiring section 28a28, which are formed by depositing metal (Al, Au, Cr, etc.) or by sputtering. Form b.
  • the self-diagnosis electrode section 27a27b and the self-diagnosis wiring section 28a, 28b should not be connected to the outer wiring section 26a26b.
  • the weight body 12 When a high voltage is applied to the center electrode portion and the outer electrode portion 27a of the weight body 12 during manufacturing and use, the weight body 12 is attracted to the outer electrode portion 27a and displaced. Then, the central contact 11 contacts the outer contact 21 a and the switch is turned on. Thereby, the operation of the semiconductor acceleration sensor and the external circuit device can be self-diagnosed.
  • the outer electrode portion 27a can also play the role of the semiconductor acceleration sensor part 24a in the first embodiment.
  • the semiconductor acceleration sensor according to the present embodiment includes a central substrate 1 and outer substrates 2a and 2b that constitute a laminate, and a sealing insulating part 3a3b.
  • the center contact portion is Set the capacitance of 1 1 and the outer contact 2 1 a small. For example, this can be achieved by reducing the contact area.
  • the switch turns ON and the contacts are welded. Operation can be stabilized.
  • what is required of an acceleration sensor can be adopted because only one operation is required. At the time of self-diagnosis, there is no problem if the test is performed with a small current. In this embodiment, since it is not necessary to increase the current capacity of the contact, a low-cost semiconductor acceleration sensor can be obtained. Industrial applicability
  • the present invention it is possible to obtain a semiconductor acceleration sensor that is small, mass-produced, easy to manufacture, low-cost, high-precision, and maintains the switch ON time for a certain period of time to stabilize its operation.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Pressure Sensors (AREA)
PCT/JP1999/000725 1998-02-19 1999-02-18 Semiconductor acceleration sensor and self-diagnosis thereof Ceased WO1999042843A1 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
DE69928061T DE69928061T2 (de) 1998-02-19 1999-02-18 Halbleiter-beschleunigungssensor mit selbstdiagnose
EP99905235A EP0997737B1 (en) 1998-02-19 1999-02-18 Semiconductor acceleration sensor and self-diagnosis thereof
US09/367,312 US6230564B1 (en) 1998-02-19 1999-02-18 Semiconductor acceleration sensor and its self-diagnosing method

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP10/37303 1998-02-19
JP10037303A JPH11237402A (ja) 1998-02-19 1998-02-19 半導体加速度センサ及びその自己診断法

Publications (1)

Publication Number Publication Date
WO1999042843A1 true WO1999042843A1 (en) 1999-08-26

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PCT/JP1999/000725 Ceased WO1999042843A1 (en) 1998-02-19 1999-02-18 Semiconductor acceleration sensor and self-diagnosis thereof

Country Status (5)

Country Link
US (1) US6230564B1 (https=)
EP (1) EP0997737B1 (https=)
JP (1) JPH11237402A (https=)
DE (1) DE69928061T2 (https=)
WO (1) WO1999042843A1 (https=)

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018089733A1 (en) 2016-11-11 2018-05-17 Analog Devices, Inc. Vertical stopper for capping mems devices
CN110023233A (zh) * 2016-11-11 2019-07-16 美国亚德诺半导体公司 用于带帽mems装置的垂直塞子
EP3538480A4 (en) * 2016-11-11 2020-07-22 Analog Devices, Inc. VERTICAL SHUT-OFF DEVICE FOR COVERING MEMS DEVICES
US10882735B2 (en) 2016-11-11 2021-01-05 Analog Devices, Inc. Vertical stopper for capping MEMS devices
EP4002407A1 (de) * 2020-11-24 2022-05-25 Siemens Aktiengesellschaft Mikroelektromechanisches schaltelement, vorrichtung und herstellungsverfahren

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EP0997737A4 (en) 2002-04-03
DE69928061T2 (de) 2006-04-20
JPH11237402A (ja) 1999-08-31
US6230564B1 (en) 2001-05-15
EP0997737B1 (en) 2005-11-02
EP0997737A1 (en) 2000-05-03
DE69928061D1 (de) 2005-12-08

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