DE69909343D1 - Halbleiterlaser mit Schutz gegen elektrostatische Entladungen - Google Patents

Halbleiterlaser mit Schutz gegen elektrostatische Entladungen

Info

Publication number
DE69909343D1
DE69909343D1 DE69909343T DE69909343T DE69909343D1 DE 69909343 D1 DE69909343 D1 DE 69909343D1 DE 69909343 T DE69909343 T DE 69909343T DE 69909343 T DE69909343 T DE 69909343T DE 69909343 D1 DE69909343 D1 DE 69909343D1
Authority
DE
Germany
Prior art keywords
semiconductor laser
protection against
electrostatic discharge
against electrostatic
discharge
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69909343T
Other languages
English (en)
Other versions
DE69909343T2 (de
Inventor
Wenbin Jiang
Paul R Gilbert Claisse
Philip A Kiely
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Publication of DE69909343D1 publication Critical patent/DE69909343D1/de
Application granted granted Critical
Publication of DE69909343T2 publication Critical patent/DE69909343T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18386—Details of the emission surface for influencing the near- or far-field, e.g. a grating on the surface
    • H01S5/18394—Apertures, e.g. defined by the shape of the upper electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0261—Non-optical elements, e.g. laser driver components, heaters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H01S5/06825—Protecting the laser, e.g. during switch-on/off, detection of malfunctioning or degradation

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Lasers (AREA)
DE69909343T 1998-01-30 1999-01-18 Halbleiterlaser mit Schutz gegen elektrostatische Entladungen Expired - Lifetime DE69909343T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US15896 1998-01-30
US09/015,896 US6185240B1 (en) 1998-01-30 1998-01-30 Semiconductor laser having electro-static discharge protection

Publications (2)

Publication Number Publication Date
DE69909343D1 true DE69909343D1 (de) 2003-08-14
DE69909343T2 DE69909343T2 (de) 2004-02-12

Family

ID=21774232

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69909343T Expired - Lifetime DE69909343T2 (de) 1998-01-30 1999-01-18 Halbleiterlaser mit Schutz gegen elektrostatische Entladungen

Country Status (3)

Country Link
US (1) US6185240B1 (de)
EP (1) EP0933842B1 (de)
DE (1) DE69909343T2 (de)

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US6975661B2 (en) 2001-06-14 2005-12-13 Finisar Corporation Method and apparatus for producing VCSELS with dielectric mirrors and self-aligned gain guide
US6489175B1 (en) * 2001-12-18 2002-12-03 Wenbin Jiang Electrically pumped long-wavelength VCSEL and methods of fabrication
US6768753B2 (en) * 2002-05-22 2004-07-27 Spectra Physics Reliable diode laser stack
JP2006505118A (ja) * 2002-10-30 2006-02-09 オスラム　オプト　セミコンダクターズ　ゲゼルシャフト　ミット　ベシュレンクテル　ハフツング ルミネセンス変換層を備えた発光ダイオード光源を製造するための方法
US7440865B1 (en) * 2003-02-03 2008-10-21 Finisar Corporation Screening optical transceiver modules for electrostatic discharge damage
KR101060055B1 (ko) 2003-11-28 2011-08-29 오스람 옵토 세미컨덕터스 게엠베하 보호 다이오드를 포함하는 발광 반도체 소자
DE102004005269B4 (de) * 2003-11-28 2005-09-29 Osram Opto Semiconductors Gmbh Lichtemittierendes Halbleiterbauelement mit einer Schutzdiode
JP2005311089A (ja) * 2004-04-22 2005-11-04 Fuji Xerox Co Ltd 垂直共振器型面発光半導体レーザ装置
JP4747516B2 (ja) * 2004-06-08 2011-08-17 富士ゼロックス株式会社 垂直共振器型面発光半導体レーザ装置
DE102004064150B4 (de) * 2004-06-29 2010-04-29 Osram Opto Semiconductors Gmbh Elektronisches Bauteil mit Gehäuse mit leitfähiger Beschichtung zum ESD-Schutz
US8482663B2 (en) * 2004-06-30 2013-07-09 Osram Opto Semiconductors Gmbh Light-emitting diode arrangement, optical recording device and method for the pulsed operation of at least one light-emitting diode
DE102004031689A1 (de) * 2004-06-30 2006-02-16 Osram Opto Semiconductors Gmbh Leuchtdiodenanordnung
JP2006066846A (ja) * 2004-07-29 2006-03-09 Seiko Epson Corp 面発光型装置及びその製造方法
CN100384040C (zh) * 2004-07-29 2008-04-23 精工爱普生株式会社 面发光型装置及其制造方法
US7295590B2 (en) 2004-11-15 2007-11-13 Intel Corporation Method for measuring VCSEL reverse bias leakage in an optical module
US7508047B2 (en) * 2004-12-03 2009-03-24 Finisar Corporation Vertical cavity surface emitting laser with integrated electrostatic discharge protection
JP4492413B2 (ja) * 2005-04-01 2010-06-30 セイコーエプソン株式会社 光半導体素子の製造方法および光半導体素子
US7349189B2 (en) * 2005-05-06 2008-03-25 Finisar Corporation Electrical surge protection using in-package gas discharge system
US20060274799A1 (en) * 2005-06-03 2006-12-07 Doug Collins VCSEL semiconductor with ESD and EOS protection
JP4449830B2 (ja) * 2005-06-14 2010-04-14 セイコーエプソン株式会社 面発光型半導体レーザ
JP4470819B2 (ja) * 2005-06-17 2010-06-02 セイコーエプソン株式会社 光素子
JP5055717B2 (ja) * 2005-06-20 2012-10-24 富士ゼロックス株式会社 面発光型半導体レーザ
JP4352337B2 (ja) * 2005-09-16 2009-10-28 ソニー株式会社 半導体レーザおよび半導体レーザ装置
US20070081568A1 (en) * 2005-10-06 2007-04-12 Seiko Epson Corporation Optical semiconductor element and method for manufacturing the same
JP2007103768A (ja) * 2005-10-06 2007-04-19 Seiko Epson Corp 光半導体素子及びその製造方法
JP4857937B2 (ja) * 2005-10-26 2012-01-18 セイコーエプソン株式会社 光素子の製造方法
JP2007129012A (ja) * 2005-11-02 2007-05-24 Seiko Epson Corp 光半導体素子
US7547572B2 (en) 2005-11-16 2009-06-16 Emcore Corporation Method of protecting semiconductor chips from mechanical and ESD damage during handling
US20070188951A1 (en) * 2006-02-10 2007-08-16 Crews Darren S Optoelectronic device ESD protection
JP2007317687A (ja) * 2006-05-23 2007-12-06 Seiko Epson Corp 光素子ウェハ、並びに、光素子チップおよびその製造方法
US20080050113A1 (en) * 2006-05-31 2008-02-28 Finisar Corporation Electrical overstress event indicator on electronic circuitry
JP5205729B2 (ja) * 2006-09-28 2013-06-05 富士通株式会社 半導体レーザ装置及びその製造方法
DE102007015474A1 (de) * 2007-03-30 2008-10-02 Osram Opto Semiconductors Gmbh Elektromagnetische Strahlung emittierendes optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements
DE102009023854B4 (de) * 2009-06-04 2023-11-09 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Halbleiterbauelement
DE102010032813A1 (de) 2010-07-30 2012-02-02 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils und optoelektronisches Halbleiterbauteil
US8315287B1 (en) 2011-05-03 2012-11-20 Avago Technologies Fiber Ip (Singapore) Pte. Ltd Surface-emitting semiconductor laser device in which an edge-emitting laser is integrated with a diffractive lens, and a method for making the device
US8488645B2 (en) 2011-07-31 2013-07-16 Avago Technologies General Ip (Singapore) Pte. Ltd. Semiconductor device having a vertical cavity surface emitting laser (VCSEL) and a protection diode integrated therein and having reduced capacitance to allow the VCSEL to achieve high operating speeds
JP6743436B2 (ja) * 2016-03-17 2020-08-19 株式会社リコー 面発光レーザアレイ、及びレーザ装置
DE102017112101A1 (de) * 2017-06-01 2018-12-06 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleitermodul
WO2019024334A1 (zh) * 2017-07-31 2019-02-07 广东工业大学 一种紫外led芯片及其制备方法
CN107437542B (zh) 2017-07-31 2023-05-05 广东工业大学 一种紫外led芯片及其制备方法
CN108923261B (zh) 2018-10-24 2019-01-29 常州纵慧芯光半导体科技有限公司 垂直腔面发射激光器的像素结构及其制作方法

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US5468656A (en) 1994-11-29 1995-11-21 Motorola Method of making a VCSEL
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Also Published As

Publication number Publication date
EP0933842A3 (de) 1999-10-06
DE69909343T2 (de) 2004-02-12
EP0933842A2 (de) 1999-08-04
EP0933842B1 (de) 2003-07-09
US6185240B1 (en) 2001-02-06

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: SEIKO EPSON CORP., SUWA, NAGANO, JP

8328 Change in the person/name/address of the agent

Representative=s name: HOFFMANN, E., DIPL.-ING., PAT.-ANW., 82166 GRäFELF