DE69832619T2 - Kompensierung in einem halbleiter-herstellungsprozess mittels nicht-gleichmässigem ionen-implantierungsverfahren - Google Patents

Kompensierung in einem halbleiter-herstellungsprozess mittels nicht-gleichmässigem ionen-implantierungsverfahren Download PDF

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Publication number
DE69832619T2
DE69832619T2 DE69832619T DE69832619T DE69832619T2 DE 69832619 T2 DE69832619 T2 DE 69832619T2 DE 69832619 T DE69832619 T DE 69832619T DE 69832619 T DE69832619 T DE 69832619T DE 69832619 T2 DE69832619 T2 DE 69832619T2
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DE
Germany
Prior art keywords
implantation
measuring
semiconductor wafer
ion implantation
parameters
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69832619T
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German (de)
English (en)
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DE69832619D1 (de
Inventor
L. Marline SHOPBELL
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
GlobalFoundries Inc
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Advanced Micro Devices Inc
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Filing date
Publication date
Application filed by Advanced Micro Devices Inc filed Critical Advanced Micro Devices Inc
Application granted granted Critical
Publication of DE69832619D1 publication Critical patent/DE69832619D1/de
Publication of DE69832619T2 publication Critical patent/DE69832619T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31701—Ion implantation
    • H01J2237/31703—Dosimetry

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
DE69832619T 1997-08-06 1998-06-10 Kompensierung in einem halbleiter-herstellungsprozess mittels nicht-gleichmässigem ionen-implantierungsverfahren Expired - Lifetime DE69832619T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US907310 1997-08-06
US08/907,310 US6055460A (en) 1997-08-06 1997-08-06 Semiconductor process compensation utilizing non-uniform ion implantation methodology
PCT/US1998/012189 WO1999008306A1 (en) 1997-08-06 1998-06-10 Semiconductor process compensation utilizing non-uniform ion implantation methodology

Publications (2)

Publication Number Publication Date
DE69832619D1 DE69832619D1 (de) 2006-01-05
DE69832619T2 true DE69832619T2 (de) 2006-08-17

Family

ID=25423879

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69832619T Expired - Lifetime DE69832619T2 (de) 1997-08-06 1998-06-10 Kompensierung in einem halbleiter-herstellungsprozess mittels nicht-gleichmässigem ionen-implantierungsverfahren

Country Status (6)

Country Link
US (1) US6055460A (enExample)
EP (1) EP1002329B1 (enExample)
JP (1) JP2001512904A (enExample)
KR (1) KR100537811B1 (enExample)
DE (1) DE69832619T2 (enExample)
WO (1) WO1999008306A1 (enExample)

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US6625512B1 (en) * 2000-07-25 2003-09-23 Advanced Micro Devices, Inc. Method and apparatus for performing final critical dimension control
US6856849B2 (en) 2000-12-06 2005-02-15 Advanced Micro Devices, Inc. Method for adjusting rapid thermal processing (RTP) recipe setpoints based on wafer electrical test (WET) parameters
US6934671B2 (en) * 2001-05-29 2005-08-23 International Business Machines Corporation Method and system for including parametric in-line test data in simulations for improved model to hardware correlation
US20030011018A1 (en) * 2001-07-13 2003-01-16 Hurley Kelly T. Flash floating gate using epitaxial overgrowth
JP3692999B2 (ja) * 2001-10-26 2005-09-07 日新イオン機器株式会社 イオン注入方法およびその装置
DE10208164B4 (de) * 2002-02-26 2006-01-12 Advanced Micro Devices, Inc., Sunnyvale Verfahren zum Steuern einer elektrischen Eigenschaft eines Feldeffekttransistors
US7127384B2 (en) * 2002-08-27 2006-10-24 Freescale Semiconductor, Inc. Fast simulation of circuitry having SOI transistors
US7224035B1 (en) * 2002-10-07 2007-05-29 Zyvex Corporation Apparatus and fabrication methods for incorporating sub-millimeter, high-resistivity mechanical components with low-resistivity conductors while maintaining electrical isolation therebetween
US6828204B2 (en) * 2002-10-16 2004-12-07 Varian Semiconductor Equipment Associates, Inc. Method and system for compensating for anneal non-uniformities
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JP2004259882A (ja) * 2003-02-25 2004-09-16 Seiko Epson Corp 半導体装置及びその製造方法
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US6960774B2 (en) * 2003-11-03 2005-11-01 Advanced Micro Devices, Inc. Fault detection and control methodologies for ion implantation processes, and system for performing same
US20060088952A1 (en) * 2004-01-21 2006-04-27 Groves James F Method and system for focused ion beam directed self-assembly of metal oxide island structures
JP4251453B2 (ja) * 2004-02-23 2009-04-08 日新イオン機器株式会社 イオン注入方法
JP2005310634A (ja) * 2004-04-23 2005-11-04 Toshiba Corp イオン注入装置およびイオン注入方法
KR100606906B1 (ko) * 2004-12-29 2006-08-01 동부일렉트로닉스 주식회사 씨모스 이미지 센서의 포토다이오드 및 그 제조방법
KR100672664B1 (ko) * 2004-12-29 2007-01-24 동부일렉트로닉스 주식회사 버티컬 씨모스 이미지 센서의 제조방법
KR100660319B1 (ko) * 2004-12-30 2006-12-22 동부일렉트로닉스 주식회사 씨모스 이미지센서 및 그의 제조방법
US20060258128A1 (en) * 2005-03-09 2006-11-16 Peter Nunan Methods and apparatus for enabling multiple process steps on a single substrate
JP2006279041A (ja) * 2005-03-22 2006-10-12 Applied Materials Inc イオンビームを使用する基板への注入
US20060240651A1 (en) * 2005-04-26 2006-10-26 Varian Semiconductor Equipment Associates, Inc. Methods and apparatus for adjusting ion implant parameters for improved process control
KR100675891B1 (ko) 2005-05-04 2007-02-02 주식회사 하이닉스반도체 불균일 이온주입장치 및 불균일 이온주입방법
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US7535031B2 (en) * 2005-09-13 2009-05-19 Philips Lumiled Lighting, Co. Llc Semiconductor light emitting device with lateral current injection in the light emitting region
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US7544957B2 (en) 2006-05-26 2009-06-09 Varian Semiconductor Equipment Associates, Inc. Non-uniform ion implantation
US7820527B2 (en) * 2008-02-20 2010-10-26 Varian Semiconductor Equipment Associates, Inc. Cleave initiation using varying ion implant dose
US8487280B2 (en) 2010-10-21 2013-07-16 Varian Semiconductor Equipment Associates, Inc. Modulating implantation for improved workpiece splitting
TWI571633B (zh) * 2011-07-25 2017-02-21 伊雷克托科學工業股份有限公司 用於特徵化物件及監測製造製程之方法及設備
US9002498B2 (en) * 2012-02-02 2015-04-07 Taiwan Semiconductor Manufacturing Co., Ltd. Tool function to improve fab process in semiconductor manufacturing
TW201442122A (zh) * 2012-12-25 2014-11-01 Ps4 Luxco Sarl 半導體裝置之製造方法
US9218941B2 (en) * 2014-01-15 2015-12-22 Axcelis Technologies, Inc. Ion implantation system and method with variable energy control
TWI714074B (zh) * 2015-01-16 2020-12-21 美商艾克塞利斯科技公司 離子植入系統及具有可變能量控制的方法
US11348813B2 (en) * 2019-01-31 2022-05-31 Applied Materials, Inc. Correcting component failures in ion implant semiconductor manufacturing tool
JP7242470B2 (ja) * 2019-08-07 2023-03-20 住友重機械イオンテクノロジー株式会社 イオン注入装置およびイオン注入方法
US11817304B2 (en) 2019-12-30 2023-11-14 Micron Technology, Inc. Method of manufacturing microelectronic devices, related devices, systems, and apparatus
US20230038392A1 (en) * 2021-08-05 2023-02-09 Axcelis Technologies, Inc. Blended energy ion implantation
CN117941024A (zh) * 2021-08-05 2024-04-26 艾克塞利斯科技公司 混合能量离子注入
CN119314904A (zh) * 2024-09-29 2025-01-14 上海积塔半导体有限公司 离子注入结构的位置确定方法、装置、设备及介质

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Also Published As

Publication number Publication date
EP1002329A1 (en) 2000-05-24
KR20010022525A (ko) 2001-03-15
WO1999008306A1 (en) 1999-02-18
US6055460A (en) 2000-04-25
JP2001512904A (ja) 2001-08-28
DE69832619D1 (de) 2006-01-05
KR100537811B1 (ko) 2005-12-20
EP1002329B1 (en) 2005-11-30

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: GLOBALFOUNDRIES INC., GRAND CAYMAN, KY

8328 Change in the person/name/address of the agent

Representative=s name: GRUENECKER, KINKELDEY, STOCKMAIR & SCHWANHAEUSSER,