DE69823263D1 - Kleinleistungsspeicher mit selektiver Voraufladungsschaltung - Google Patents
Kleinleistungsspeicher mit selektiver VoraufladungsschaltungInfo
- Publication number
- DE69823263D1 DE69823263D1 DE69823263T DE69823263T DE69823263D1 DE 69823263 D1 DE69823263 D1 DE 69823263D1 DE 69823263 T DE69823263 T DE 69823263T DE 69823263 T DE69823263 T DE 69823263T DE 69823263 D1 DE69823263 D1 DE 69823263D1
- Authority
- DE
- Germany
- Prior art keywords
- small capacity
- precharge circuit
- capacity storage
- selective precharge
- selective
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/12—Bit line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, equalising circuits, for bit lines
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1072—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers for memories with random access ports synchronised on clock signal pulse trains, e.g. synchronous memories, self timed memories
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Static Random-Access Memory (AREA)
- Dram (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US828571 | 1997-03-31 | ||
US08/828,571 US5828610A (en) | 1997-03-31 | 1997-03-31 | Low power memory including selective precharge circuit |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69823263D1 true DE69823263D1 (de) | 2004-05-27 |
DE69823263T2 DE69823263T2 (de) | 2005-04-28 |
Family
ID=25252189
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69823263T Expired - Lifetime DE69823263T2 (de) | 1997-03-31 | 1998-02-10 | Kleinleistungsspeicher mit selektiver Voraufladungsschaltung |
Country Status (6)
Country | Link |
---|---|
US (1) | US5828610A (de) |
EP (1) | EP0869507B1 (de) |
JP (1) | JP3834996B2 (de) |
KR (1) | KR19980080431A (de) |
CN (1) | CN1126104C (de) |
DE (1) | DE69823263T2 (de) |
Families Citing this family (48)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5828597A (en) * | 1997-04-02 | 1998-10-27 | Texas Instruments Incorporated | Low voltage, low power static random access memory cell |
US6507887B1 (en) * | 1998-01-13 | 2003-01-14 | Koninklijke Philips Electronics N.V. | Binary data memory design with data stored in low-power sense |
EP1131824B1 (de) * | 1998-09-30 | 2003-03-12 | Infineon Technologies AG | Single-port speicherzelle |
US6147917A (en) * | 1998-10-15 | 2000-11-14 | Stmicroelectronics, Inc. | Apparatus and method for noise reduction in DRAM |
US6222777B1 (en) * | 1999-04-09 | 2001-04-24 | Sun Microsystems, Inc. | Output circuit for alternating multiple bit line per column memory architecture |
US6236603B1 (en) * | 2000-01-21 | 2001-05-22 | Advanced Micro Devices, Inc. | High speed charging of core cell drain lines in a memory device |
US6347058B1 (en) | 2000-05-19 | 2002-02-12 | International Business Machines Corporation | Sense amplifier with overdrive and regulated bitline voltage |
US6282140B1 (en) * | 2000-06-08 | 2001-08-28 | Systems Integration Inc. | Multiplexor having a single event upset (SEU) immune data keeper circuit |
KR100365644B1 (ko) * | 2000-06-28 | 2002-12-26 | 삼성전자 주식회사 | 멀티비트 불휘발성 메모리 장치 |
US6822904B2 (en) * | 2001-01-03 | 2004-11-23 | Micron Technology, Inc. | Fast sensing scheme for floating-gate memory cells |
KR100630673B1 (ko) * | 2001-01-11 | 2006-10-02 | 삼성전자주식회사 | 무부하 비트 라인 특성을 갖는 선택적 프리챠지 회로 |
US6466497B1 (en) * | 2001-04-17 | 2002-10-15 | Sun Microsystems, Inc. | Secondary precharge mechanism for high speed multi-ported register files |
US6629194B2 (en) * | 2001-05-31 | 2003-09-30 | Intel Corporation | Method and apparatus for low power memory bit line precharge |
US6510092B1 (en) * | 2001-08-30 | 2003-01-21 | Intel Corporation | Robust shadow bitline circuit technique for high-performance register files |
US6542423B1 (en) * | 2001-09-18 | 2003-04-01 | Fujitsu Limited | Read port design and method for register array |
JP4019021B2 (ja) * | 2003-07-14 | 2007-12-05 | 日本テキサス・インスツルメンツ株式会社 | 半導体メモリセル |
US7295481B2 (en) * | 2003-10-16 | 2007-11-13 | International Business Machines Corporation | Power saving by disabling cyclic bitline precharge |
KR100555534B1 (ko) | 2003-12-03 | 2006-03-03 | 삼성전자주식회사 | 인액티브 위크 프리차아징 및 이퀄라이징 스킴을 채용한프리차아지 회로, 이를 포함하는 메모리 장치 및 그프리차아지 방법 |
KR100653686B1 (ko) * | 2003-12-31 | 2006-12-04 | 삼성전자주식회사 | 동적 반도체 메모리 장치 및 이 장치의 절전 모드 동작방법 |
US7224635B2 (en) * | 2005-03-04 | 2007-05-29 | Atmel Corporation | Fast read port for register file |
US20070189101A1 (en) * | 2005-05-17 | 2007-08-16 | Atmel Corporation | Fast read port for register file |
TWI295805B (en) * | 2005-04-26 | 2008-04-11 | Via Tech Inc | Memory circuit and related method for integrating pre-decode and selective pre-charge |
US7483332B2 (en) * | 2005-08-11 | 2009-01-27 | Texas Instruments Incorporated | SRAM cell using separate read and write circuitry |
JP4941644B2 (ja) | 2005-09-28 | 2012-05-30 | ハイニックス セミコンダクター インク | 半導体メモリ装置 |
KR100772708B1 (ko) * | 2005-09-28 | 2007-11-02 | 주식회사 하이닉스반도체 | 반도체 메모리 장치 |
US7366047B2 (en) * | 2005-11-09 | 2008-04-29 | Infineon Technologies Ag | Method and apparatus for reducing standby current in a dynamic random access memory during self refresh |
US7755961B2 (en) * | 2006-07-07 | 2010-07-13 | Rao G R Mohan | Memories with selective precharge |
US7724593B2 (en) | 2006-07-07 | 2010-05-25 | Rao G R Mohan | Memories with front end precharge |
KR101088548B1 (ko) * | 2006-07-07 | 2011-12-05 | 에스. 아쿠아 세미컨덕터 엘엘씨 | 전단 프리차지를 하는 메모리 |
US7477551B2 (en) * | 2006-11-08 | 2009-01-13 | Texas Instruments Incorporated | Systems and methods for reading data from a memory array |
KR101274204B1 (ko) * | 2007-08-08 | 2013-06-17 | 삼성전자주식회사 | 로컬 입출력 라인의 프리차지 방법 및 그 방법을 이용하는반도체 메모리 장치 |
US7995409B2 (en) * | 2007-10-16 | 2011-08-09 | S. Aqua Semiconductor, Llc | Memory with independent access and precharge |
US8095853B2 (en) | 2007-10-19 | 2012-01-10 | S. Aqua Semiconductor Llc | Digital memory with fine grain write operation |
US7804728B2 (en) * | 2008-08-04 | 2010-09-28 | International Business Machines Corporation | Information handling system with SRAM precharge power conservation |
US8050114B2 (en) * | 2008-10-14 | 2011-11-01 | Arm Limited | Memory device having a single pass-gate transistor per bitline column multiplexer coupled to latch circuitry and method thereof |
US8320163B2 (en) * | 2009-06-10 | 2012-11-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | Eight-transistor SRAM memory with shared bit-lines |
US8406078B2 (en) | 2010-05-12 | 2013-03-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Memory circuits having a plurality of keepers |
US8395960B2 (en) * | 2010-05-12 | 2013-03-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | Memory circuits having a plurality of keepers |
CN102637458B (zh) * | 2011-02-11 | 2015-07-08 | 台湾积体电路制造股份有限公司 | 带有多个保持器的存储电路 |
GB2525904B (en) | 2014-05-08 | 2018-05-09 | Surecore Ltd | Memory unit |
CN105355232B (zh) * | 2014-08-19 | 2018-10-23 | 中芯国际集成电路制造(上海)有限公司 | 静态随机存储器 |
KR101543701B1 (ko) | 2014-12-22 | 2015-08-12 | 연세대학교 산학협력단 | 감지 증폭기 및 그를 이용한 반도체 메모리 장치 |
US10431269B2 (en) * | 2015-02-04 | 2019-10-01 | Altera Corporation | Methods and apparatus for reducing power consumption in memory circuitry by controlling precharge duration |
KR102408572B1 (ko) * | 2015-08-18 | 2022-06-13 | 삼성전자주식회사 | 반도체 메모리 장치 |
CN106653088A (zh) * | 2016-10-10 | 2017-05-10 | 中国科学院微电子研究所 | 一种基于动态电阻单元的伪差分式半导体只读存储阵列 |
US10867668B2 (en) * | 2017-10-06 | 2020-12-15 | Qualcomm Incorporated | Area efficient write data path circuit for SRAM yield enhancement |
CN112102863B (zh) * | 2020-09-07 | 2023-04-25 | 海光信息技术股份有限公司 | 静态随机存取存储器控制电路、方法、存储器和处理器 |
US11640841B2 (en) * | 2021-06-30 | 2023-05-02 | Microsoft Technology Licensing, Llc | Memory systems including memory arrays employing column read circuits to control floating of column read bit lines, and related methods |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4823031A (en) * | 1988-02-01 | 1989-04-18 | Texas Instruments Incorporated | Single-ended sense amplifier with positive feedback |
JP2581766B2 (ja) * | 1988-06-30 | 1997-02-12 | 富士通株式会社 | 半導体記憶装置 |
US4932001A (en) * | 1988-10-12 | 1990-06-05 | Advanced Micro Devices, Inc. | Reducing power consumption in on-chip memory devices |
KR920022301A (ko) * | 1991-05-28 | 1992-12-19 | 김광호 | 반도체 기억장치 |
JP2876830B2 (ja) * | 1991-06-27 | 1999-03-31 | 日本電気株式会社 | 半導体記憶装置 |
KR970011971B1 (ko) * | 1992-03-30 | 1997-08-08 | 삼성전자 주식회사 | 반도체 메모리 장치의 비트라인 프리차아지회로 |
JP2658768B2 (ja) * | 1992-10-19 | 1997-09-30 | 日本電気株式会社 | ダイナミックram |
US5329174A (en) * | 1992-10-23 | 1994-07-12 | Xilinx, Inc. | Circuit for forcing known voltage on unconnected pads of an integrated circuit |
US5293342A (en) * | 1992-12-17 | 1994-03-08 | Casper Stephen L | Wordline driver circuit having an automatic precharge circuit |
JP2663838B2 (ja) * | 1993-07-27 | 1997-10-15 | 日本電気株式会社 | 半導体集積回路装置 |
JP3573782B2 (ja) * | 1993-08-31 | 2004-10-06 | 川崎マイクロエレクトロニクス株式会社 | 連想メモリ |
US5410268A (en) * | 1993-09-08 | 1995-04-25 | Advanced Micro Devices, Inc. | Latching zero-power sense amplifier with cascode |
JP2723015B2 (ja) * | 1993-12-01 | 1998-03-09 | 日本電気株式会社 | 半導体記憶装置 |
US5438548A (en) * | 1993-12-10 | 1995-08-01 | Texas Instruments Incorporated | Synchronous memory with reduced power access mode |
US5400283A (en) * | 1993-12-13 | 1995-03-21 | Micron Semiconductor, Inc. | RAM row decode circuitry that utilizes a precharge circuit that is deactivated by a feedback from an activated word line driver |
JPH07254286A (ja) * | 1994-03-16 | 1995-10-03 | Nippon Motorola Ltd | 低消費電力半導体メモリ装置 |
JPH087574A (ja) * | 1994-06-21 | 1996-01-12 | Matsushita Electric Ind Co Ltd | 低消費電力型スタティックram |
US5521875A (en) * | 1994-12-30 | 1996-05-28 | Vlsi Technology, Inc. | Dynamic single-ended sense amp improvement with charge share assist |
US5619464A (en) * | 1995-06-07 | 1997-04-08 | Advanced Micro Devices, Inc. | High performance RAM array circuit employing self-time clock generator for enabling array accessess |
-
1997
- 1997-03-31 US US08/828,571 patent/US5828610A/en not_active Expired - Lifetime
-
1998
- 1998-02-10 DE DE69823263T patent/DE69823263T2/de not_active Expired - Lifetime
- 1998-02-10 EP EP98102289A patent/EP0869507B1/de not_active Expired - Lifetime
- 1998-03-18 KR KR1019980009346A patent/KR19980080431A/ko not_active Application Discontinuation
- 1998-03-30 JP JP08464698A patent/JP3834996B2/ja not_active Expired - Fee Related
- 1998-03-30 CN CN98106142A patent/CN1126104C/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
KR19980080431A (ko) | 1998-11-25 |
CN1199229A (zh) | 1998-11-18 |
US5828610A (en) | 1998-10-27 |
CN1126104C (zh) | 2003-10-29 |
JP3834996B2 (ja) | 2006-10-18 |
EP0869507A2 (de) | 1998-10-07 |
EP0869507B1 (de) | 2004-04-21 |
DE69823263T2 (de) | 2005-04-28 |
JPH10275476A (ja) | 1998-10-13 |
EP0869507A3 (de) | 1999-12-08 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |