DE69819159T2 - System zum detektieren von oberflächenanomalien und/oder -merkmalen - Google Patents
System zum detektieren von oberflächenanomalien und/oder -merkmalen Download PDFInfo
- Publication number
- DE69819159T2 DE69819159T2 DE69819159T DE69819159T DE69819159T2 DE 69819159 T2 DE69819159 T2 DE 69819159T2 DE 69819159 T DE69819159 T DE 69819159T DE 69819159 T DE69819159 T DE 69819159T DE 69819159 T2 DE69819159 T2 DE 69819159T2
- Authority
- DE
- Germany
- Prior art keywords
- line
- plane
- detector
- incidence
- focused
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000000034 method Methods 0.000 claims description 27
- 230000008859 change Effects 0.000 claims description 19
- 238000001514 detection method Methods 0.000 claims description 15
- 230000003287 optical effect Effects 0.000 claims description 9
- 238000013507 mapping Methods 0.000 claims description 7
- 230000004044 response Effects 0.000 claims description 3
- 230000010354 integration Effects 0.000 claims description 2
- 230000003111 delayed effect Effects 0.000 claims 1
- 230000005855 radiation Effects 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 42
- 238000007689 inspection Methods 0.000 description 21
- 238000003384 imaging method Methods 0.000 description 16
- 239000011159 matrix material Substances 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 8
- 238000005286 illumination Methods 0.000 description 7
- 230000007547 defect Effects 0.000 description 6
- 238000012360 testing method Methods 0.000 description 6
- 230000035945 sensitivity Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 230000004075 alteration Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 230000007847 structural defect Effects 0.000 description 2
- 230000001360 synchronised effect Effects 0.000 description 2
- 241000405086 Bembrops curvatura Species 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 210000003608 fece Anatomy 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
Landscapes
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Length Measuring Devices By Optical Means (AREA)
- Length Measuring Devices With Unspecified Measuring Means (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US904892 | 1997-08-01 | ||
| US08/904,892 US6608676B1 (en) | 1997-08-01 | 1997-08-01 | System for detecting anomalies and/or features of a surface |
| PCT/US1998/016116 WO1999006823A1 (en) | 1997-08-01 | 1998-07-28 | System for detecting anomalies and/or features of a surface |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE69819159D1 DE69819159D1 (de) | 2003-11-27 |
| DE69819159T2 true DE69819159T2 (de) | 2004-06-17 |
Family
ID=25419930
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE69819159T Expired - Lifetime DE69819159T2 (de) | 1997-08-01 | 1998-07-28 | System zum detektieren von oberflächenanomalien und/oder -merkmalen |
Country Status (7)
| Country | Link |
|---|---|
| US (5) | US6608676B1 (enExample) |
| EP (1) | EP1000346B1 (enExample) |
| JP (1) | JP4616472B2 (enExample) |
| AT (1) | ATE252731T1 (enExample) |
| AU (1) | AU8765798A (enExample) |
| DE (1) | DE69819159T2 (enExample) |
| WO (1) | WO1999006823A1 (enExample) |
Families Citing this family (100)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6411377B1 (en) * | 1991-04-02 | 2002-06-25 | Hitachi, Ltd. | Optical apparatus for defect and particle size inspection |
| US6608676B1 (en) * | 1997-08-01 | 2003-08-19 | Kla-Tencor Corporation | System for detecting anomalies and/or features of a surface |
| US6091488A (en) * | 1999-03-22 | 2000-07-18 | Beltronics, Inc. | Method of and apparatus for automatic high-speed optical inspection of semi-conductor structures and the like through fluorescent photoresist inspection |
| US6587193B1 (en) | 1999-05-11 | 2003-07-01 | Applied Materials, Inc. | Inspection systems performing two-dimensional imaging with line light spot |
| IL146386A (en) * | 2001-11-08 | 2010-02-17 | Nova Measuring Instr Ltd | Method and apparatus for measuring thin films |
| US20040032581A1 (en) * | 2002-01-15 | 2004-02-19 | Mehrdad Nikoonahad | Systems and methods for inspection of specimen surfaces |
| US7088443B2 (en) * | 2002-02-11 | 2006-08-08 | Kla-Tencor Technologies Corporation | System for detecting anomalies and/or features of a surface |
| US6724473B2 (en) | 2002-03-27 | 2004-04-20 | Kla-Tencor Technologies Corporation | Method and system using exposure control to inspect a surface |
| US7130039B2 (en) * | 2002-04-18 | 2006-10-31 | Kla-Tencor Technologies Corporation | Simultaneous multi-spot inspection and imaging |
| US20040042001A1 (en) | 2002-04-18 | 2004-03-04 | Kla-Tencor Technologies Corporation | Simultaneous multi-spot inspection and imaging |
| US20070258085A1 (en) * | 2006-05-02 | 2007-11-08 | Robbins Michael D | Substrate illumination and inspection system |
| DE10232781B4 (de) * | 2002-07-18 | 2013-03-28 | Vistec Semiconductor Systems Gmbh | Vorrichtung zur Wafer-Inspektion |
| US7068363B2 (en) * | 2003-06-06 | 2006-06-27 | Kla-Tencor Technologies Corp. | Systems for inspection of patterned or unpatterned wafers and other specimen |
| JP4536337B2 (ja) * | 2003-06-10 | 2010-09-01 | 株式会社トプコン | 表面検査方法および表面検査装置 |
| US7365834B2 (en) * | 2003-06-24 | 2008-04-29 | Kla-Tencor Technologies Corporation | Optical system for detecting anomalies and/or features of surfaces |
| JP4641143B2 (ja) * | 2003-06-30 | 2011-03-02 | 株式会社トプコン | 表面検査装置 |
| US7280200B2 (en) * | 2003-07-18 | 2007-10-09 | Ade Corporation | Detection of a wafer edge using collimated light |
| US7130036B1 (en) * | 2003-09-16 | 2006-10-31 | Kla-Tencor Technologies Corp. | Methods and systems for inspection of an entire wafer surface using multiple detection channels |
| US7265809B2 (en) * | 2003-10-07 | 2007-09-04 | Universal Avionics Systems Corporation | Flat panel display having integral metal heater optically hidden behind an EMI shield |
| WO2006012058A1 (en) * | 2004-06-28 | 2006-02-02 | Japan Communications, Inc. | Systems and methods for mutual authentication of network |
| US7420669B2 (en) * | 2004-07-01 | 2008-09-02 | Midwest Research Institute | Optic probe for semiconductor characterization |
| US7233389B2 (en) * | 2004-12-03 | 2007-06-19 | Omnitek Partners, Llc | System and method for the measurement of the velocity and acceleration of objects |
| US7253376B2 (en) * | 2005-01-21 | 2007-08-07 | Ultratech, Inc. | Methods and apparatus for truncating an image formed with coherent radiation |
| US7804993B2 (en) * | 2005-02-28 | 2010-09-28 | Applied Materials South East Asia Pte. Ltd. | Method and apparatus for detecting defects in wafers including alignment of the wafer images so as to induce the same smear in all images |
| US7315361B2 (en) * | 2005-04-29 | 2008-01-01 | Gsi Group Corporation | System and method for inspecting wafers in a laser marking system |
| JP4988223B2 (ja) * | 2005-06-22 | 2012-08-01 | 株式会社日立ハイテクノロジーズ | 欠陥検査装置およびその方法 |
| US7345754B1 (en) | 2005-09-16 | 2008-03-18 | Kla-Tencor Technologies Corp. | Fourier filters and wafer inspection systems |
| US20070119836A1 (en) * | 2005-11-29 | 2007-05-31 | Thomas Schroeder | Method and apparatus for focusing a beam from an excimer laser to form a line of light on a substrate |
| JP4996856B2 (ja) | 2006-01-23 | 2012-08-08 | 株式会社日立ハイテクノロジーズ | 欠陥検査装置およびその方法 |
| US20070229833A1 (en) * | 2006-02-22 | 2007-10-04 | Allan Rosencwaig | High-sensitivity surface detection system and method |
| JP2007248086A (ja) | 2006-03-14 | 2007-09-27 | Hitachi High-Technologies Corp | 欠陥検査装置 |
| US9068917B1 (en) * | 2006-03-14 | 2015-06-30 | Kla-Tencor Technologies Corp. | Systems and methods for inspection of a specimen |
| US20090116727A1 (en) * | 2006-05-02 | 2009-05-07 | Accretech Usa, Inc. | Apparatus and Method for Wafer Edge Defects Detection |
| US20090122304A1 (en) * | 2006-05-02 | 2009-05-14 | Accretech Usa, Inc. | Apparatus and Method for Wafer Edge Exclusion Measurement |
| US7508504B2 (en) * | 2006-05-02 | 2009-03-24 | Accretech Usa, Inc. | Automatic wafer edge inspection and review system |
| US7433033B2 (en) * | 2006-05-05 | 2008-10-07 | Asml Netherlands B.V. | Inspection method and apparatus using same |
| US7525649B1 (en) * | 2007-10-19 | 2009-04-28 | Kla-Tencor Technologies Corporation | Surface inspection system using laser line illumination with two dimensional imaging |
| US7826049B2 (en) * | 2008-02-11 | 2010-11-02 | Applied Materials South East Asia Pte. Ltd. | Inspection tools supporting multiple operating states for multiple detector arrangements |
| JP5319930B2 (ja) | 2008-02-20 | 2013-10-16 | 株式会社日立ハイテクノロジーズ | 欠陥検査装置及び欠陥検査方法 |
| US8285025B2 (en) * | 2008-03-25 | 2012-10-09 | Electro Scientific Industries, Inc. | Method and apparatus for detecting defects using structured light |
| US7973921B2 (en) * | 2008-06-25 | 2011-07-05 | Applied Materials South East Asia Pte Ltd. | Dynamic illumination in optical inspection systems |
| NL2003658A (en) * | 2008-12-31 | 2010-07-01 | Asml Holding Nv | Euv mask inspection. |
| JP5331586B2 (ja) | 2009-06-18 | 2013-10-30 | 株式会社日立ハイテクノロジーズ | 欠陥検査装置および検査方法 |
| JP5405956B2 (ja) | 2009-09-24 | 2014-02-05 | 株式会社日立ハイテクノロジーズ | 欠陥検査装置 |
| JP5538072B2 (ja) | 2010-06-03 | 2014-07-02 | 株式会社日立ハイテクノロジーズ | 欠陥検査方法およびその装置 |
| JP5520737B2 (ja) | 2010-07-30 | 2014-06-11 | 株式会社日立ハイテクノロジーズ | 欠陥検査装置および欠陥検査方法 |
| JP5259669B2 (ja) * | 2010-09-27 | 2013-08-07 | 株式会社日立ハイテクノロジーズ | 欠陥検査装置及び欠陥検査方法 |
| JP2012127682A (ja) | 2010-12-13 | 2012-07-05 | Hitachi High-Technologies Corp | 欠陥検査方法及びその装置 |
| JP2012137350A (ja) | 2010-12-27 | 2012-07-19 | Hitachi High-Technologies Corp | 欠陥検査方法および欠陥検査装置 |
| US8885158B2 (en) * | 2011-03-10 | 2014-11-11 | Kla-Tencor Corporation | Surface scanning inspection system with adjustable scan pitch |
| US9793673B2 (en) | 2011-06-13 | 2017-10-17 | Kla-Tencor Corporation | Semiconductor inspection and metrology system using laser pulse multiplier |
| US8873596B2 (en) | 2011-07-22 | 2014-10-28 | Kla-Tencor Corporation | Laser with high quality, stable output beam, and long life high conversion efficiency non-linear crystal |
| US9250178B2 (en) | 2011-10-07 | 2016-02-02 | Kla-Tencor Corporation | Passivation of nonlinear optical crystals |
| CN102489875A (zh) * | 2011-11-25 | 2012-06-13 | 中国航空工业集团公司北京航空制造工程研究所 | 一种利用柱面镜进行激光倾斜入射的能量补偿方法 |
| CN103959039A (zh) | 2011-12-01 | 2014-07-30 | P.M.L.离子监测装置有限公司 | 用于颗粒大小和浓度测量的检测方案 |
| JPWO2013099468A1 (ja) | 2011-12-27 | 2015-04-30 | 株式会社日立ハイテクノロジーズ | 検査装置 |
| JP5865738B2 (ja) | 2012-03-13 | 2016-02-17 | 株式会社日立ハイテクノロジーズ | 欠陥検査方法及びその装置 |
| US9496425B2 (en) | 2012-04-10 | 2016-11-15 | Kla-Tencor Corporation | Back-illuminated sensor with boron layer |
| US9535009B2 (en) * | 2012-05-16 | 2017-01-03 | Hitachi High-Technologies Corporation | Inspection system |
| US9601299B2 (en) | 2012-08-03 | 2017-03-21 | Kla-Tencor Corporation | Photocathode including silicon substrate with boron layer |
| US9086389B2 (en) | 2012-10-26 | 2015-07-21 | Kla-Tencor Corporation | Sample inspection system detector |
| US9151940B2 (en) | 2012-12-05 | 2015-10-06 | Kla-Tencor Corporation | Semiconductor inspection and metrology system using laser pulse multiplier |
| US9426400B2 (en) | 2012-12-10 | 2016-08-23 | Kla-Tencor Corporation | Method and apparatus for high speed acquisition of moving images using pulsed illumination |
| US8929406B2 (en) | 2013-01-24 | 2015-01-06 | Kla-Tencor Corporation | 193NM laser and inspection system |
| US9529182B2 (en) | 2013-02-13 | 2016-12-27 | KLA—Tencor Corporation | 193nm laser and inspection system |
| US9608399B2 (en) | 2013-03-18 | 2017-03-28 | Kla-Tencor Corporation | 193 nm laser and an inspection system using a 193 nm laser |
| US9478402B2 (en) | 2013-04-01 | 2016-10-25 | Kla-Tencor Corporation | Photomultiplier tube, image sensor, and an inspection system using a PMT or image sensor |
| US9347890B2 (en) | 2013-12-19 | 2016-05-24 | Kla-Tencor Corporation | Low-noise sensor and an inspection system using a low-noise sensor |
| US9748294B2 (en) | 2014-01-10 | 2017-08-29 | Hamamatsu Photonics K.K. | Anti-reflection layer for back-illuminated sensor |
| US9410901B2 (en) | 2014-03-17 | 2016-08-09 | Kla-Tencor Corporation | Image sensor, an inspection system and a method of inspecting an article |
| US9804101B2 (en) | 2014-03-20 | 2017-10-31 | Kla-Tencor Corporation | System and method for reducing the bandwidth of a laser and an inspection system and method using a laser |
| GB2526866A (en) * | 2014-06-05 | 2015-12-09 | Univ Bristol | Apparatus for and method of inspecting surface topography of a moving object |
| US9525265B2 (en) | 2014-06-20 | 2016-12-20 | Kla-Tencor Corporation | Laser repetition rate multiplier and flat-top beam profile generators using mirrors and/or prisms |
| KR102316146B1 (ko) | 2014-08-13 | 2021-10-22 | 삼성전자주식회사 | 표면 검사용 광학 모듈 및 이를 포함하는 표면 검사 장치 |
| US9767986B2 (en) | 2014-08-29 | 2017-09-19 | Kla-Tencor Corporation | Scanning electron microscope and methods of inspecting and reviewing samples |
| US9419407B2 (en) | 2014-09-25 | 2016-08-16 | Kla-Tencor Corporation | Laser assembly and inspection system using monolithic bandwidth narrowing apparatus |
| US9891177B2 (en) | 2014-10-03 | 2018-02-13 | Kla-Tencor Corporation | TDI sensor in a darkfield system |
| US9748729B2 (en) | 2014-10-03 | 2017-08-29 | Kla-Tencor Corporation | 183NM laser and inspection system |
| JP6635674B2 (ja) * | 2015-05-11 | 2020-01-29 | キヤノン株式会社 | 計測装置、計測方法およびプログラム |
| US9860466B2 (en) | 2015-05-14 | 2018-01-02 | Kla-Tencor Corporation | Sensor with electrically controllable aperture for inspection and metrology systems |
| US10748730B2 (en) | 2015-05-21 | 2020-08-18 | Kla-Tencor Corporation | Photocathode including field emitter array on a silicon substrate with boron layer |
| US10462391B2 (en) | 2015-08-14 | 2019-10-29 | Kla-Tencor Corporation | Dark-field inspection using a low-noise sensor |
| US10778925B2 (en) | 2016-04-06 | 2020-09-15 | Kla-Tencor Corporation | Multiple column per channel CCD sensor architecture for inspection and metrology |
| US10313622B2 (en) | 2016-04-06 | 2019-06-04 | Kla-Tencor Corporation | Dual-column-parallel CCD sensor and inspection systems using a sensor |
| US10324045B2 (en) | 2016-08-05 | 2019-06-18 | Kla-Tencor Corporation | Surface defect inspection with large particle monitoring and laser power control |
| US10739275B2 (en) * | 2016-09-15 | 2020-08-11 | Kla-Tencor Corporation | Simultaneous multi-directional laser wafer inspection |
| JP2019536059A (ja) * | 2016-10-30 | 2019-12-12 | ユニバーシティ オブ ヴィエナ | 多重走査時間集束を用いた高速深組織画像化システム |
| US10175555B2 (en) | 2017-01-03 | 2019-01-08 | KLA—Tencor Corporation | 183 nm CW laser and inspection system |
| WO2019082186A1 (en) * | 2017-10-26 | 2019-05-02 | Particle Measuring Systems, Inc. | SYSTEM AND METHOD FOR MEASURING PARTICLES |
| US11114489B2 (en) | 2018-06-18 | 2021-09-07 | Kla-Tencor Corporation | Back-illuminated sensor and a method of manufacturing a sensor |
| US10943760B2 (en) | 2018-10-12 | 2021-03-09 | Kla Corporation | Electron gun and electron microscope |
| US11114491B2 (en) | 2018-12-12 | 2021-09-07 | Kla Corporation | Back-illuminated sensor and a method of manufacturing a sensor |
| KR20220005478A (ko) | 2019-04-25 | 2022-01-13 | 파티클 머슈어링 시스템즈, 인크. | 축상 입자 검출 및/또는 차동 검출을 위한 입자 검출 시스템 및 방법 |
| WO2020257154A1 (en) | 2019-06-17 | 2020-12-24 | Georgia Tech Research Corporation | Low-aberration high-speed-compatible optical delay lines and methods thereof |
| US11703460B2 (en) | 2019-07-09 | 2023-07-18 | Kla Corporation | Methods and systems for optical surface defect material characterization |
| JP7645247B2 (ja) | 2019-11-22 | 2025-03-13 | パーティクル・メージャーリング・システムズ・インコーポレーテッド | 干渉粒子検出及び小サイズ寸法を有する粒子の検出のための高度なシステム及び方法 |
| US11668601B2 (en) * | 2020-02-24 | 2023-06-06 | Kla Corporation | Instrumented substrate apparatus |
| US11848350B2 (en) | 2020-04-08 | 2023-12-19 | Kla Corporation | Back-illuminated sensor and a method of manufacturing a sensor using a silicon on insulator wafer |
| CN115201990A (zh) * | 2022-09-08 | 2022-10-18 | 成都中科卓尔智能科技集团有限公司 | 一种半导体光学材料内部缺陷检测片光源镜头 |
| TWI874079B (zh) * | 2023-12-27 | 2025-02-21 | 政美應用股份有限公司 | 檢測互連結構表面的方法及裝置 |
Family Cites Families (47)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3071243D1 (en) * | 1979-07-06 | 1986-01-02 | Toshiba Kk | Surface stress measurement |
| JPS5630630A (en) * | 1979-08-23 | 1981-03-27 | Hitachi Ltd | Foreign matter detector |
| US4579455A (en) | 1983-05-09 | 1986-04-01 | Kla Instruments Corporation | Photomask inspection apparatus and method with improved defect detection |
| JPH0750664B2 (ja) * | 1983-06-23 | 1995-05-31 | 富士通株式会社 | レチクルの検査方法 |
| US4629319A (en) * | 1984-02-14 | 1986-12-16 | Diffracto Ltd. | Panel surface flaw inspection |
| GB2159271B (en) * | 1984-04-27 | 1988-05-18 | Nissan Motor | Surface flaw detecting method and apparatus |
| US4795911A (en) * | 1986-02-14 | 1989-01-03 | Canon Kabushiki Kaisha | Surface examining apparatus for detecting the presence of foreign particles on the surface |
| JPS6333834A (ja) * | 1986-07-28 | 1988-02-13 | Canon Inc | 表面状態検査装置 |
| DE3637477A1 (de) | 1986-11-04 | 1988-05-11 | Wacker Chemitronic | Verfahren und vorrichtung zur ermittlung der qualitaet von oberflaechen, insbesondere von halbleiterscheiben |
| US4898471A (en) | 1987-06-18 | 1990-02-06 | Tencor Instruments | Particle detection on patterned wafers and the like |
| JPS63314963A (ja) | 1987-06-18 | 1988-12-22 | Fuji Photo Film Co Ltd | 原稿照明装置 |
| JP2512059B2 (ja) * | 1988-02-26 | 1996-07-03 | 株式会社日立製作所 | 異物検出方法及びその装置 |
| US5206699A (en) | 1988-05-06 | 1993-04-27 | Gersan Establishment | Sensing a narrow frequency band of radiation and gemstones |
| US5274434A (en) * | 1990-04-02 | 1993-12-28 | Hitachi, Ltd. | Method and apparatus for inspecting foreign particles on real time basis in semiconductor mass production line |
| US5237404A (en) * | 1990-06-28 | 1993-08-17 | Mazda Motor Corporation | Inspection apparatus with improved detection of surface defects over large and curved surfaces |
| US5192856A (en) | 1990-11-19 | 1993-03-09 | An Con Genetics, Inc. | Auto focusing bar code reader |
| US5172005A (en) * | 1991-02-20 | 1992-12-15 | Pressco Technology, Inc. | Engineered lighting system for tdi inspection comprising means for controlling lighting elements in accordance with specimen displacement |
| US6411377B1 (en) * | 1991-04-02 | 2002-06-25 | Hitachi, Ltd. | Optical apparatus for defect and particle size inspection |
| US5463459A (en) | 1991-04-02 | 1995-10-31 | Hitachi, Ltd. | Method and apparatus for analyzing the state of generation of foreign particles in semiconductor fabrication process |
| US5479259A (en) | 1991-05-20 | 1995-12-26 | Hitachi, Ltd. | Method and apparatus for detecting photoacoustic signal |
| US5251010A (en) * | 1991-06-07 | 1993-10-05 | Glasstech, Inc. | Optical roller wave gauge |
| US5636187A (en) * | 1992-12-11 | 1997-06-03 | Canon Kabushiki Kaisha | Magnetooptical recording apparatus and magnetooptical recording method for canceling leakage magnetic fields associated with a recording medium and devices ancillary to the recording medium |
| JPH06194320A (ja) * | 1992-12-25 | 1994-07-15 | Hitachi Ltd | 半導体製造ラインにおける鏡面基板の検査方法およびその装置並びに半導体製造方法 |
| JP3599630B2 (ja) | 1993-03-09 | 2004-12-08 | 株式会社ルネサステクノロジ | 欠陥検査方法及び欠陥検査装置 |
| JP3599631B2 (ja) | 1993-03-09 | 2004-12-08 | 株式会社ルネサステクノロジ | 欠陥検査方法及び欠陥検査装置 |
| JP3435187B2 (ja) * | 1993-05-12 | 2003-08-11 | 株式会社日立製作所 | 欠陥検査方法及びその装置 |
| JP3253177B2 (ja) | 1993-06-15 | 2002-02-04 | キヤノン株式会社 | 表面状態検査装置 |
| US5663569A (en) * | 1993-10-14 | 1997-09-02 | Nikon Corporation | Defect inspection method and apparatus, and defect display method |
| US5463549A (en) * | 1993-10-15 | 1995-10-31 | Schlumberger Technology Corporation | Method and apparatus for determining permeability of subsurface formations |
| JPH07209202A (ja) * | 1994-01-21 | 1995-08-11 | Canon Inc | 表面状態検査装置、該表面状態検査装置を備える露光装置及び該露光装置を用いてデバイスを製造する方法 |
| JPH07318504A (ja) * | 1994-05-23 | 1995-12-08 | Hitachi Electron Eng Co Ltd | ウエハの異物検出受光系 |
| US5864394A (en) * | 1994-06-20 | 1999-01-26 | Kla-Tencor Corporation | Surface inspection system |
| US5576831A (en) * | 1994-06-20 | 1996-11-19 | Tencor Instruments | Wafer alignment sensor |
| US5530550A (en) * | 1994-12-21 | 1996-06-25 | Tencor Instruments | Optical wafer positioning system |
| US5883710A (en) * | 1994-12-08 | 1999-03-16 | Kla-Tencor Corporation | Scanning system for inspecting anomalies on surfaces |
| US6118525A (en) * | 1995-03-06 | 2000-09-12 | Ade Optical Systems Corporation | Wafer inspection system for distinguishing pits and particles |
| JP3140664B2 (ja) | 1995-06-30 | 2001-03-05 | 松下電器産業株式会社 | 異物検査方法及び装置 |
| JP3668294B2 (ja) * | 1995-08-22 | 2005-07-06 | オリンパス株式会社 | 表面欠陥検査装置 |
| US5825482A (en) | 1995-09-29 | 1998-10-20 | Kla-Tencor Corporation | Surface inspection system with misregistration error correction and adaptive illumination |
| US5644393A (en) | 1995-10-19 | 1997-07-01 | Hitachi Electronics Engineering Co., Ltd. | Extraneous substance inspection method and apparatus |
| US5737074A (en) * | 1995-12-05 | 1998-04-07 | New Creation Co., Ltd. | Surface inspection method and apparatus |
| US5926266A (en) * | 1996-09-23 | 1999-07-20 | International Business Machines Corporation | Optical apparatus for rapid defect analysis |
| US5719840A (en) | 1996-12-30 | 1998-02-17 | Phase Metrics | Optical sensor with an elliptical illumination spot |
| JPH10318504A (ja) * | 1997-05-16 | 1998-12-04 | Babcock Hitachi Kk | 大容量微粉固体燃料燃焼装置 |
| US6608676B1 (en) | 1997-08-01 | 2003-08-19 | Kla-Tencor Corporation | System for detecting anomalies and/or features of a surface |
| JPH11230915A (ja) | 1998-02-13 | 1999-08-27 | Hitachi Ltd | 異物検査装置 |
| US7088443B2 (en) * | 2002-02-11 | 2006-08-08 | Kla-Tencor Technologies Corporation | System for detecting anomalies and/or features of a surface |
-
1997
- 1997-08-01 US US08/904,892 patent/US6608676B1/en not_active Expired - Lifetime
-
1998
- 1998-07-28 JP JP2000505506A patent/JP4616472B2/ja not_active Expired - Lifetime
- 1998-07-28 EP EP98939174A patent/EP1000346B1/en not_active Expired - Lifetime
- 1998-07-28 AT AT98939174T patent/ATE252731T1/de not_active IP Right Cessation
- 1998-07-28 AU AU87657/98A patent/AU8765798A/en not_active Abandoned
- 1998-07-28 DE DE69819159T patent/DE69819159T2/de not_active Expired - Lifetime
- 1998-07-28 WO PCT/US1998/016116 patent/WO1999006823A1/en not_active Ceased
-
2003
- 2003-05-30 US US10/452,624 patent/US20040036864A1/en not_active Abandoned
-
2004
- 2004-09-24 US US10/949,078 patent/US7280199B2/en not_active Expired - Fee Related
-
2007
- 2007-09-14 US US11/855,935 patent/US20080002193A1/en not_active Abandoned
-
2008
- 2008-05-19 US US12/123,393 patent/US7869023B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| EP1000346B1 (en) | 2003-10-22 |
| US6608676B1 (en) | 2003-08-19 |
| JP4616472B2 (ja) | 2011-01-19 |
| US20050036138A1 (en) | 2005-02-17 |
| DE69819159D1 (de) | 2003-11-27 |
| US20080218762A1 (en) | 2008-09-11 |
| ATE252731T1 (de) | 2003-11-15 |
| US20040036864A1 (en) | 2004-02-26 |
| WO1999006823A1 (en) | 1999-02-11 |
| AU8765798A (en) | 1999-02-22 |
| US7869023B2 (en) | 2011-01-11 |
| US7280199B2 (en) | 2007-10-09 |
| US20080002193A1 (en) | 2008-01-03 |
| EP1000346A1 (en) | 2000-05-17 |
| JP2001512237A (ja) | 2001-08-21 |
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