DE68923353T2 - Anordnung und Verfahren zum Ermitteln von Fehlern in zu prüfenden Mustern. - Google Patents

Anordnung und Verfahren zum Ermitteln von Fehlern in zu prüfenden Mustern.

Info

Publication number
DE68923353T2
DE68923353T2 DE68923353T DE68923353T DE68923353T2 DE 68923353 T2 DE68923353 T2 DE 68923353T2 DE 68923353 T DE68923353 T DE 68923353T DE 68923353 T DE68923353 T DE 68923353T DE 68923353 T2 DE68923353 T2 DE 68923353T2
Authority
DE
Germany
Prior art keywords
tested
samples
arrangement
determining errors
errors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE68923353T
Other languages
English (en)
Other versions
DE68923353D1 (de
Inventor
Shunji Maeda
Hitoshi Kubota
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Technology Corp
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Application granted granted Critical
Publication of DE68923353D1 publication Critical patent/DE68923353D1/de
Publication of DE68923353T2 publication Critical patent/DE68923353T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G01N21/95607—Inspecting patterns on the surface of objects using a comparative method
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
    • G01N2021/8896—Circuits specially adapted for system specific signal conditioning
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G01N21/95607—Inspecting patterns on the surface of objects using a comparative method
    • G01N2021/95615—Inspecting patterns on the surface of objects using a comparative method with stored comparision signal
DE68923353T 1988-12-23 1989-12-12 Anordnung und Verfahren zum Ermitteln von Fehlern in zu prüfenden Mustern. Expired - Lifetime DE68923353T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63323276A JPH02170279A (ja) 1988-12-23 1988-12-23 被検査対象パターンの欠陥検出方法及びその装置

Publications (2)

Publication Number Publication Date
DE68923353D1 DE68923353D1 (de) 1995-08-10
DE68923353T2 true DE68923353T2 (de) 1996-04-11

Family

ID=18152984

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68923353T Expired - Lifetime DE68923353T2 (de) 1988-12-23 1989-12-12 Anordnung und Verfahren zum Ermitteln von Fehlern in zu prüfenden Mustern.

Country Status (5)

Country Link
US (1) US5038048A (de)
EP (1) EP0374694B1 (de)
JP (1) JPH02170279A (de)
KR (1) KR930008773B1 (de)
DE (1) DE68923353T2 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19903486C2 (de) * 1999-01-29 2003-03-06 Leica Microsystems Verfahren und Vorrichtung zur optischen Untersuchung von strukturierten Oberflächen von Objekten

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JP3472600B2 (ja) * 1993-08-25 2003-12-02 株式会社日立製作所 半導体デバイスの製造方法
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JP3497234B2 (ja) * 1994-05-17 2004-02-16 リーダー電子株式会社 ベクトルスコープ用の移相装置
JP3466286B2 (ja) * 1994-08-09 2003-11-10 富士通株式会社 パターン検査方法及びパターン検査装置
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JPH09199551A (ja) * 1996-01-12 1997-07-31 Mitsubishi Electric Corp インライン検査用検査データ解析処理装置
US6298149B1 (en) * 1996-03-21 2001-10-02 Cognex Corporation Semiconductor device image inspection with contrast enhancement
JP4001653B2 (ja) * 1996-08-29 2007-10-31 ケーエルエー・インストルメンツ・コーポレーション 試料からの多重チャネル応答を用いた試料の光学的検査
JP3566470B2 (ja) * 1996-09-17 2004-09-15 株式会社日立製作所 パターン検査方法及びその装置
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JP3152203B2 (ja) * 1998-05-27 2001-04-03 株式会社東京精密 外観検査装置
JP2000030652A (ja) * 1998-07-10 2000-01-28 Hitachi Ltd 試料の観察方法およびその装置
JP3768029B2 (ja) * 1998-08-31 2006-04-19 Ｎｔｎ株式会社 パターン欠陥修正装置
AU1412000A (en) * 1998-11-30 2000-06-19 Olympus Optical Co., Ltd. Measuring instrument
JP3139998B2 (ja) * 1998-12-01 2001-03-05 株式会社東京精密 外観検査装置及び方法
US6516085B1 (en) * 1999-05-03 2003-02-04 Kla-Tencor Apparatus and methods for collecting global data during a reticle inspection
US6603877B1 (en) * 1999-06-01 2003-08-05 Beltronics, Inc. Method of and apparatus for optical imaging inspection of multi-material objects and the like
JP4337999B2 (ja) * 1999-09-14 2009-09-30 ソニー株式会社 焦点位置制御機構及び方法、並びに、半導体ウェハの検査装置及び方法
JP2001124660A (ja) * 1999-10-25 2001-05-11 Horiba Ltd 平面表示装置の欠陥・異物検査方法およびその検査装置
US6603873B1 (en) * 1999-11-12 2003-08-05 Applied Materials, Inc. Defect detection using gray level signatures
US6369888B1 (en) * 1999-11-17 2002-04-09 Applied Materials, Inc. Method and apparatus for article inspection including speckle reduction
JP2001343329A (ja) * 2000-05-31 2001-12-14 Sumitomo Osaka Cement Co Ltd フィルムまたはフィルムパッケージ検査装置及び検査方法
US6831998B1 (en) 2000-06-22 2004-12-14 Hitachi, Ltd. Inspection system for circuit patterns and a method thereof
JP2003130808A (ja) * 2001-10-29 2003-05-08 Hitachi Ltd 欠陥検査方法及びその装置
JP3816426B2 (ja) * 2002-09-09 2006-08-30 株式会社ルネサステクノロジ プロセス処理装置
JP3944439B2 (ja) * 2002-09-26 2007-07-11 株式会社日立ハイテクノロジーズ 電子線を用いた検査方法および検査装置
US7525659B2 (en) 2003-01-15 2009-04-28 Negevtech Ltd. System for detection of water defects
JP4212904B2 (ja) * 2003-01-22 2009-01-21 日本板硝子株式会社 透明体上のピンホール欠点および汚れ欠点を検出する方法および装置
DE10323139A1 (de) * 2003-05-22 2004-12-23 Leica Microsystems Jena Gmbh Verfahren und Vorrichtung zum Hochauflösenden Fehlerfinden und Klassifizieren
US7423280B2 (en) 2004-08-09 2008-09-09 Quad/Tech, Inc. Web inspection module including contact image sensors
US20060171593A1 (en) * 2005-02-01 2006-08-03 Hitachi High-Technologies Corporation Inspection apparatus for inspecting patterns of a substrate
US7804993B2 (en) 2005-02-28 2010-09-28 Applied Materials South East Asia Pte. Ltd. Method and apparatus for detecting defects in wafers including alignment of the wafer images so as to induce the same smear in all images
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JP4450776B2 (ja) * 2005-07-22 2010-04-14 株式会社日立ハイテクノロジーズ 欠陥検査方法及び外観検査装置
JP4789629B2 (ja) * 2006-01-13 2011-10-12 株式会社東京精密 半導体外観検査装置、外観検査方法及び半導体製造装置
US8103087B2 (en) 2006-01-20 2012-01-24 Hitachi High-Technologies Corporation Fault inspection method
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JP2009192358A (ja) * 2008-02-14 2009-08-27 Fuji Electric Systems Co Ltd 欠陥検査装置
KR101343429B1 (ko) * 2008-02-28 2013-12-20 삼성전자주식회사 표면 검사장치 및 그의 표면 검사방법
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JP5654782B2 (ja) * 2010-06-22 2015-01-14 株式会社ディスコ 研削加工装置
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JP2012049381A (ja) * 2010-08-27 2012-03-08 Toshiba Corp 検査装置、及び、検査方法
JP6246673B2 (ja) * 2013-09-09 2017-12-13 東京エレクトロン株式会社 測定装置、基板処理システムおよび測定方法
CN107248151B (zh) * 2017-04-20 2020-12-22 深圳市智能机器人研究院 一种基于机器视觉的液晶片智能检测方法及系统

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19903486C2 (de) * 1999-01-29 2003-03-06 Leica Microsystems Verfahren und Vorrichtung zur optischen Untersuchung von strukturierten Oberflächen von Objekten

Also Published As

Publication number Publication date
EP0374694A2 (de) 1990-06-27
EP0374694B1 (de) 1995-07-05
DE68923353D1 (de) 1995-08-10
US5038048A (en) 1991-08-06
KR930008773B1 (ko) 1993-09-15
EP0374694A3 (de) 1991-08-28
KR900010959A (ko) 1990-07-11
JPH02170279A (ja) 1990-07-02

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: RENESAS TECHNOLOGY CORP., TOKYO, JP

8328 Change in the person/name/address of the agent

Representative=s name: LEINWEBER & ZIMMERMANN, 80331 MUENCHEN