DE69817351D1 - Einstufiges verfahren zur entfernung von einem photoresistmuster und einer seitenwand - Google Patents

Einstufiges verfahren zur entfernung von einem photoresistmuster und einer seitenwand

Info

Publication number
DE69817351D1
DE69817351D1 DE69817351T DE69817351T DE69817351D1 DE 69817351 D1 DE69817351 D1 DE 69817351D1 DE 69817351 T DE69817351 T DE 69817351T DE 69817351 T DE69817351 T DE 69817351T DE 69817351 D1 DE69817351 D1 DE 69817351D1
Authority
DE
Germany
Prior art keywords
sidewall
photoresist pattern
step method
photoresist
pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69817351T
Other languages
English (en)
Other versions
DE69817351T2 (de
Inventor
Eiji Toyoda
Makoto Namikawa
Kouichi Hashimoto
Selichiro Shirai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nitto Denko Corp
Original Assignee
Nitto Denko Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nitto Denko Corp filed Critical Nitto Denko Corp
Application granted granted Critical
Publication of DE69817351D1 publication Critical patent/DE69817351D1/de
Publication of DE69817351T2 publication Critical patent/DE69817351T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • H01L21/02071—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a delineation, e.g. RIE, of conductive layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/34—Imagewise removal by selective transfer, e.g. peeling away
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10T156/11—Methods of delaminating, per se; i.e., separating at bonding face

Landscapes

  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Adhesive Tapes (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Drying Of Semiconductors (AREA)
DE69817351T 1997-02-12 1998-02-06 Einstufiges verfahren zur entfernung von einem photoresistmuster und einer seitenwand Expired - Fee Related DE69817351T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP9027399A JPH10223615A (ja) 1997-02-12 1997-02-12 レジスト材と側壁保護膜との一括除去方法
JP2739997 1997-02-12
PCT/JP1998/000509 WO1998036445A1 (fr) 1997-02-12 1998-02-06 Procede pour retirer en une seule operation un element de resist et une couche de protection de paroi laterale

Publications (2)

Publication Number Publication Date
DE69817351D1 true DE69817351D1 (de) 2003-09-25
DE69817351T2 DE69817351T2 (de) 2004-04-08

Family

ID=12219994

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69817351T Expired - Fee Related DE69817351T2 (de) 1997-02-12 1998-02-06 Einstufiges verfahren zur entfernung von einem photoresistmuster und einer seitenwand

Country Status (8)

Country Link
US (1) US6436220B1 (de)
EP (1) EP0989465B1 (de)
JP (1) JPH10223615A (de)
KR (1) KR100460166B1 (de)
DE (1) DE69817351T2 (de)
ES (1) ES2205440T3 (de)
TW (1) TW370679B (de)
WO (1) WO1998036445A1 (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001076871A (ja) * 1999-06-29 2001-03-23 Nitto Denko Corp 有機エレクトロルミネセンス素子およびその製造方法
TWI457238B (zh) * 2011-11-15 2014-10-21 Himax Tech Ltd 晶圓級光學透鏡模組之保護膜除去方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5474650A (en) * 1991-04-04 1995-12-12 Hitachi, Ltd. Method and apparatus for dry etching
US5466325A (en) * 1993-06-02 1995-11-14 Nitto Denko Corporation Resist removing method, and curable pressure-sensitive adhesive, adhesive sheets and apparatus used for the method
JP3074634B2 (ja) * 1994-03-28 2000-08-07 三菱瓦斯化学株式会社 フォトレジスト用剥離液及び配線パターンの形成方法
JPH088153A (ja) * 1994-06-22 1996-01-12 Nitto Denko Corp レジスト除去方法およびその装置
JP3590672B2 (ja) * 1994-12-29 2004-11-17 日東電工株式会社 レジスト膜画像の除去方法
JPH0916082A (ja) 1995-04-27 1997-01-17 Nitto Denko Corp パターン形成用シート及びそのラベル
JP3581190B2 (ja) * 1995-04-27 2004-10-27 日東電工株式会社 レジスト剥離用接着シ―ト類と剥離方法
JPH08305042A (ja) * 1995-04-27 1996-11-22 Nitto Denko Corp レジストの除去方法
US6126772A (en) * 1995-06-15 2000-10-03 Nitto Denko Corporation Method for resist removal, and adhesive or adhesive sheet for use in the same
JP3590673B2 (ja) * 1995-06-15 2004-11-17 日東電工株式会社 レジスト膜画像の除去方法
JP3396357B2 (ja) * 1995-11-16 2003-04-14 日東電工株式会社 レジスト除去装置
JP3028927B2 (ja) * 1996-02-16 2000-04-04 日本電気株式会社 高融点金属膜のドライエッチング方法
US5895740A (en) * 1996-11-13 1999-04-20 Vanguard International Semiconductor Corp. Method of forming contact holes of reduced dimensions by using in-situ formed polymeric sidewall spacers
JPH10247321A (ja) * 1997-03-06 1998-09-14 Nitto Denko Corp スタンパ―の製造方法
JPH11162805A (ja) * 1997-12-02 1999-06-18 Nitto Denko Corp レジスト除去方法

Also Published As

Publication number Publication date
KR20000071038A (ko) 2000-11-25
DE69817351T2 (de) 2004-04-08
KR100460166B1 (ko) 2004-12-08
JPH10223615A (ja) 1998-08-21
TW370679B (en) 1999-09-21
EP0989465A4 (de) 2000-03-29
ES2205440T3 (es) 2004-05-01
EP0989465B1 (de) 2003-08-20
EP0989465A1 (de) 2000-03-29
WO1998036445A1 (fr) 1998-08-20
US6436220B1 (en) 2002-08-20

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee