DE69811976T2 - Elektronenemissionsvorrichtung - Google Patents

Elektronenemissionsvorrichtung

Info

Publication number
DE69811976T2
DE69811976T2 DE69811976T DE69811976T DE69811976T2 DE 69811976 T2 DE69811976 T2 DE 69811976T2 DE 69811976 T DE69811976 T DE 69811976T DE 69811976 T DE69811976 T DE 69811976T DE 69811976 T2 DE69811976 T2 DE 69811976T2
Authority
DE
Germany
Prior art keywords
electron emission
emission device
electron
emission
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69811976T
Other languages
English (en)
Other versions
DE69811976D1 (de
Inventor
Takamasa Yoshikawa
Kiyohide Ogasawara
Hiroshi Ito
Masataka Yamaguchi
Shingo Iwasaki
Nobuyasu Negishi
Takashi Chuman
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
KOSHIDA, NOBUYOSHI, KOGANEI, TOKIO/TOKYO, JP
Original Assignee
Pioneer Electronic Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP07186497A external-priority patent/JP3537624B2/ja
Application filed by Pioneer Electronic Corp filed Critical Pioneer Electronic Corp
Publication of DE69811976D1 publication Critical patent/DE69811976D1/de
Application granted granted Critical
Publication of DE69811976T2 publication Critical patent/DE69811976T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H01J1/312—Cold cathodes, e.g. field-emissive cathode having an electric field perpendicular to the surface, e.g. tunnel-effect cathodes of metal-insulator-metal [MIM] type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2329/00—Electron emission display panels, e.g. field emission display panels

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Electrodes For Cathode-Ray Tubes (AREA)
  • Cold Cathode And The Manufacture (AREA)
  • Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)
DE69811976T 1997-03-25 1998-03-23 Elektronenemissionsvorrichtung Expired - Lifetime DE69811976T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP7186597 1997-03-25
JP07186497A JP3537624B2 (ja) 1997-03-25 1997-03-25 電子放出素子

Publications (2)

Publication Number Publication Date
DE69811976D1 DE69811976D1 (de) 2003-04-17
DE69811976T2 true DE69811976T2 (de) 2003-11-27

Family

ID=26412981

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69811976T Expired - Lifetime DE69811976T2 (de) 1997-03-25 1998-03-23 Elektronenemissionsvorrichtung

Country Status (3)

Country Link
US (1) US5990605A (de)
EP (1) EP0874384B1 (de)
DE (1) DE69811976T2 (de)

Families Citing this family (77)

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US6274881B1 (en) * 1997-01-10 2001-08-14 Matsushita Electric Industrial Co., Ltd. Electron emission element having semiconductor emitter with localized state, field emission type display device using the same, and method for producing the element and the device
JPH1167065A (ja) * 1997-08-08 1999-03-09 Pioneer Electron Corp 電子放出素子及びこれを用いた表示装置
US6400070B1 (en) * 1997-08-08 2002-06-04 Pioneer Electronic Corporation Electron emission device and display device using the same
US6586872B2 (en) * 1997-09-03 2003-07-01 Canon Kabushiki Kaisha Electron emission source, method and image-forming apparatus, with enhanced output and durability
US6635979B1 (en) * 1998-02-09 2003-10-21 Matsushita Electric Industrial Co., Ltd. Electron emitting device, method of producing the same, and method of driving the same; and image display comprising the electron emitting device and method of producing the same
JP2000040589A (ja) * 1998-07-22 2000-02-08 Tdk Corp 有機ｅｌ素子
JP3765671B2 (ja) * 1998-08-10 2006-04-12 パイオニア株式会社 電子放出素子及びこれを用いた電子放出表示装置
KR100338140B1 (ko) * 1998-09-25 2002-05-24 이마이 기요스케 전계 방사형 전자원
TW436837B (en) 1998-11-16 2001-05-28 Matsushita Electric Works Ltd Field emission-type electron source and manufacturing method thereof and display using the electron source
US6498426B1 (en) 1999-04-23 2002-12-24 Matsushita Electric Works, Ltd. Field emission-type electron source and manufacturing method thereof
US6603257B1 (en) * 1999-05-27 2003-08-05 University Of North Carolina At Charlotte Cathodo-/electro-luminescent device and method of fabricating a cathodo-/electro-luminescent device using porous silicon/porous silicon carbide as an electron emitter
US6765342B1 (en) * 1999-10-18 2004-07-20 Matsushita Electric Work, Ltd. Field emission-type electron source and manufacturing method thereof
US6583578B1 (en) * 1999-10-18 2003-06-24 Matsushita Electric Works, Ltd. Field emission-type electron source and manufacturing method thereof
JP3789064B2 (ja) * 1999-10-27 2006-06-21 パイオニア株式会社 電子放出素子
JP2001257368A (ja) * 2000-03-09 2001-09-21 Matsushita Research Institute Tokyo Inc 光電子材料及び応用素子、並びに光電子材料の製造方法
TW497278B (en) * 2000-03-24 2002-08-01 Japan Science & Tech Corp Method for generating trajectory electron, trajectory electron solid state semiconductor element
US6617774B1 (en) * 2000-04-10 2003-09-09 Hitachi, Ltd. Thin-film electron emitter device having multi-layered electron emission areas
JP3806751B2 (ja) * 2000-05-23 2006-08-09 独立行政法人科学技術振興機構 量子サイズ効果型微小電子銃の製造方法
US6790785B1 (en) * 2000-09-15 2004-09-14 The Board Of Trustees Of The University Of Illinois Metal-assisted chemical etch porous silicon formation method
JP3687522B2 (ja) * 2000-10-26 2005-08-24 松下電工株式会社 電界放射型電子源
TWI286773B (en) 2000-10-26 2007-09-11 Matsushita Electric Works Ltd Field emission type electron source
AU2001297876A1 (en) * 2000-11-27 2003-01-02 The Board Of Trustees Of The University Of Illinois Metal-assisted chemical etch to produce porous group iii-v materials
KR100384892B1 (ko) * 2000-12-01 2003-05-22 한국전자통신연구원 에르븀이 도핑된 실리콘나노점의 형성 방법
EP1265263A4 (de) * 2000-12-22 2006-11-08 Ngk Insulators Ltd Elektronenemissionselement und dieses verwen-dende feldemissionsanzeige
US6936972B2 (en) * 2000-12-22 2005-08-30 Ngk Insulators, Ltd. Electron-emitting element and field emission display using the same
US6911768B2 (en) * 2001-04-30 2005-06-28 Hewlett-Packard Development Company, L.P. Tunneling emitter with nanohole openings
US6771010B2 (en) 2001-04-30 2004-08-03 Hewlett-Packard Development Company, L.P. Silicon emitter with low porosity heavily doped contact layer
US6781146B2 (en) * 2001-04-30 2004-08-24 Hewlett-Packard Development Company, L.P. Annealed tunneling emitter
US7476925B2 (en) 2001-08-30 2009-01-13 Micron Technology, Inc. Atomic layer deposition of metal oxide and/or low asymmetrical tunnel barrier interploy insulators
US6946800B2 (en) * 2002-02-26 2005-09-20 Ngk Insulators, Ltd. Electron emitter, method of driving electron emitter, display and method of driving display
WO2003077320A1 (fr) * 2002-03-08 2003-09-18 Matsushita Electric Works, Ltd. Dispositif quantique
US7160577B2 (en) 2002-05-02 2007-01-09 Micron Technology, Inc. Methods for atomic-layer deposition of aluminum oxides in integrated circuits
US6897620B1 (en) 2002-06-24 2005-05-24 Ngk Insulators, Ltd. Electron emitter, drive circuit of electron emitter and method of driving electron emitter
JP3822551B2 (ja) * 2002-09-30 2006-09-20 日本碍子株式会社 発光素子及びそれを具えるフィールドエミッションディスプレイ
US7067970B2 (en) * 2002-09-30 2006-06-27 Ngk Insulators, Ltd. Light emitting device
JP2004146364A (ja) * 2002-09-30 2004-05-20 Ngk Insulators Ltd 発光素子及びそれを具えるフィールドエミッションディスプレイ
JP2004172087A (ja) * 2002-11-05 2004-06-17 Ngk Insulators Ltd ディスプレイ
JP2004178863A (ja) * 2002-11-25 2004-06-24 Toshiba Corp 電子源装置および表示装置
US20050062400A1 (en) * 2002-11-29 2005-03-24 Ngk Insulators, Ltd. Electron emitter
JP3867065B2 (ja) * 2002-11-29 2007-01-10 日本碍子株式会社 電子放出素子及び発光素子
US6975074B2 (en) * 2002-11-29 2005-12-13 Ngk Insulators, Ltd. Electron emitter comprising emitter section made of dielectric material
JP2004228065A (ja) * 2002-11-29 2004-08-12 Ngk Insulators Ltd 電子パルス放出装置
US7187114B2 (en) * 2002-11-29 2007-03-06 Ngk Insulators, Ltd. Electron emitter comprising emitter section made of dielectric material
US7129642B2 (en) * 2002-11-29 2006-10-31 Ngk Insulators, Ltd. Electron emitting method of electron emitter
JP4203954B2 (ja) * 2002-12-26 2009-01-07 株式会社日立製作所 画像表示装置
JP2004265603A (ja) * 2003-01-14 2004-09-24 Sharp Corp 電子放出装置および電子放出素子クリーニング装置および電子放出素子クリーニング方法
US7379037B2 (en) * 2003-03-26 2008-05-27 Ngk Insulators, Ltd. Display apparatus, method of driving display apparatus, electron emitter, method of driving electron emitter, apparatus for driving electron emitter, electron emission apparatus, and method of driving electron emission apparatus
US7176609B2 (en) * 2003-10-03 2007-02-13 Ngk Insulators, Ltd. High emission low voltage electron emitter
US20040189548A1 (en) * 2003-03-26 2004-09-30 Ngk Insulators, Ltd. Circuit element, signal processing circuit, control device, display device, method of driving display device, method of driving circuit element, and method of driving control device
JP2005070349A (ja) * 2003-08-22 2005-03-17 Ngk Insulators Ltd ディスプレイ及びその駆動方法
US7474060B2 (en) * 2003-08-22 2009-01-06 Ngk Insulators, Ltd. Light source
US20050116603A1 (en) * 2003-10-03 2005-06-02 Ngk Insulators, Ltd. Electron emitter
JP2005183361A (ja) * 2003-10-03 2005-07-07 Ngk Insulators Ltd 電子放出素子、電子放出装置、ディスプレイ及び光源
US7336026B2 (en) * 2003-10-03 2008-02-26 Ngk Insulators, Ltd. High efficiency dielectric electron emitter
US7719201B2 (en) * 2003-10-03 2010-05-18 Ngk Insulators, Ltd. Microdevice, microdevice array, amplifying circuit, memory device, analog switch, and current control unit
JP2005116232A (ja) * 2003-10-03 2005-04-28 Ngk Insulators Ltd 電子放出素子及びその製造方法
US7718469B2 (en) * 2004-03-05 2010-05-18 The University Of North Carolina At Charlotte Alternative methods for fabrication of substrates and heterostructures made of silicon compounds and alloys
US7687409B2 (en) 2005-03-29 2010-03-30 Micron Technology, Inc. Atomic layer deposited titanium silicon oxide films
US7662729B2 (en) 2005-04-28 2010-02-16 Micron Technology, Inc. Atomic layer deposition of a ruthenium layer to a lanthanide oxide dielectric layer
US7572695B2 (en) 2005-05-27 2009-08-11 Micron Technology, Inc. Hafnium titanium oxide films
US7927948B2 (en) 2005-07-20 2011-04-19 Micron Technology, Inc. Devices with nanocrystals and methods of formation
JP2007096263A (ja) * 2005-08-31 2007-04-12 Denso Corp 炭化珪素半導体装置およびその製造方法。
US7825591B2 (en) * 2006-02-15 2010-11-02 Panasonic Corporation Mesh structure and field-emission electron source apparatus using the same
US20070188090A1 (en) * 2006-02-15 2007-08-16 Matsushita Toshiba Picture Display Co., Ltd. Field-emission electron source apparatus
JP2010090231A (ja) * 2008-10-07 2010-04-22 Canon Inc 画像表示装置
CA2814584A1 (en) 2010-10-22 2012-04-26 California Institute Of Technology Nanomesh phononic structures for low thermal conductivity and thermoelectric energy conversion materials
CN102280332B (zh) * 2011-07-04 2013-07-24 四川大学 一种mipm型内场发射阴极
US20130019918A1 (en) 2011-07-18 2013-01-24 The Regents Of The University Of Michigan Thermoelectric devices, systems and methods
US10205080B2 (en) 2012-01-17 2019-02-12 Matrix Industries, Inc. Systems and methods for forming thermoelectric devices
WO2013149205A1 (en) 2012-03-29 2013-10-03 California Institute Of Technology Phononic structures and related devices and methods
EP2885823B1 (de) 2012-08-17 2018-05-02 Matrix Industries, Inc. Verfahren zur herstellung thermoelektrischer vorrichtungen
WO2014070795A1 (en) 2012-10-31 2014-05-08 Silicium Energy, Inc. Methods for forming thermoelectric elements
US20150050816A1 (en) * 2013-08-19 2015-02-19 Korea Atomic Energy Research Institute Method of electrochemically preparing silicon film
CN106537621B (zh) 2014-03-25 2018-12-07 美特瑞克斯实业公司 热电设备和系统
TW201809931A (zh) 2016-05-03 2018-03-16 麥崔克斯工業股份有限公司 熱電裝置及系統
USD819627S1 (en) 2016-11-11 2018-06-05 Matrix Industries, Inc. Thermoelectric smartwatch
CN112811882B (zh) * 2021-01-11 2022-04-22 湖南省美程陶瓷科技有限公司 一种高稳定传感器陶瓷材料及其制备方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2012192A1 (de) * 1970-03-14 1971-10-07 Philips Nv Elektrische Entladungsrohre mit einer Kathode bestehend aus einer zwischen zwei leitenden Schichten hegenden Isolierschicht, und Verfahren zur Herstellung einer fur eine derartige Entladungsrohre bestimmte Kathode
GB9216647D0 (en) * 1992-08-05 1992-09-16 Isis Innovation Cold cathodes
JP3390495B2 (ja) * 1993-08-30 2003-03-24 株式会社日立製作所 Ｍｉｍ構造素子およびその製造方法
JP3281533B2 (ja) * 1996-03-26 2002-05-13 パイオニア株式会社 冷電子放出表示装置及び半導体冷電子放出素子

Also Published As

Publication number Publication date
EP0874384A1 (de) 1998-10-28
US5990605A (en) 1999-11-23
DE69811976D1 (de) 2003-04-17
EP0874384B1 (de) 2003-03-12

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)
8367 Partial disclaimer of the patent
8327 Change in the person/name/address of the patent owner

Owner name: KOSHIDA, NOBUYOSHI, KOGANEI, TOKIO/TOKYO, JP