ATA86197A - Ein-elektron speicherbauelement - Google Patents
Ein-elektron speicherbauelementInfo
- Publication number
- ATA86197A ATA86197A AT0086197A AT86197A ATA86197A AT A86197 A ATA86197 A AT A86197A AT 0086197 A AT0086197 A AT 0086197A AT 86197 A AT86197 A AT 86197A AT A86197 A ATA86197 A AT A86197A
- Authority
- AT
- Austria
- Prior art keywords
- memory component
- electron memory
- electron
- component
- memory
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7888—Transistors programmable by two single electrons
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7881—Programmable transistors with only two possible levels of programmation
- H01L29/7883—Programmable transistors with only two possible levels of programmation charging by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2216/00—Indexing scheme relating to G11C16/00 and subgroups, for features not directly covered by these groups
- G11C2216/02—Structural aspects of erasable programmable read-only memories
- G11C2216/08—Nonvolatile memory wherein data storage is accomplished by storing relatively few electrons in the storage layer, i.e. single electron memory
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/902—Specified use of nanostructure
- Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
- Y10S977/936—Specified use of nanostructure for electronic or optoelectronic application in a transistor or 3-terminal device
- Y10S977/937—Single electron transistor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Semiconductor Memories (AREA)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
AT0086197A AT405109B (de) | 1997-05-21 | 1997-05-21 | Ein-elektron speicherbauelement |
AU70122/98A AU7012298A (en) | 1997-05-21 | 1998-04-22 | Single-electron memory component |
PCT/AT1998/000105 WO1998053504A1 (de) | 1997-05-21 | 1998-04-22 | Ein-elektron-speicherbauelement |
US09/444,243 US6487112B1 (en) | 1997-05-21 | 1999-11-19 | Single-electron memory |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
AT0086197A AT405109B (de) | 1997-05-21 | 1997-05-21 | Ein-elektron speicherbauelement |
Publications (2)
Publication Number | Publication Date |
---|---|
ATA86197A true ATA86197A (de) | 1998-09-15 |
AT405109B AT405109B (de) | 1999-05-25 |
Family
ID=3501507
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT0086197A AT405109B (de) | 1997-05-21 | 1997-05-21 | Ein-elektron speicherbauelement |
Country Status (4)
Country | Link |
---|---|
US (1) | US6487112B1 (de) |
AT (1) | AT405109B (de) |
AU (1) | AU7012298A (de) |
WO (1) | WO1998053504A1 (de) |
Families Citing this family (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
AT405109B (de) | 1997-05-21 | 1999-05-25 | Wasshuber Christoph Dipl Ing D | Ein-elektron speicherbauelement |
EP1170799A3 (de) * | 2000-07-04 | 2009-04-01 | Infineon Technologies AG | Elektronisches Bauelement und Verfahren zum Herstellen eines elektronischen Bauelements |
JP4049988B2 (ja) * | 2000-11-24 | 2008-02-20 | 株式会社東芝 | 論理回路 |
TW531890B (en) * | 2002-02-27 | 2003-05-11 | Ind Tech Res Inst | Single electron device fabricated from nanoparticle derivatives |
JP3974429B2 (ja) * | 2002-02-28 | 2007-09-12 | 株式会社東芝 | 乱数発生素子 |
US7122413B2 (en) | 2003-12-19 | 2006-10-17 | Texas Instruments Incorporated | Method to manufacture silicon quantum islands and single-electron devices |
US7773404B2 (en) * | 2005-01-07 | 2010-08-10 | Invisage Technologies, Inc. | Quantum dot optical devices with enhanced gain and sensitivity and methods of making same |
US7746681B2 (en) * | 2005-01-07 | 2010-06-29 | Invisage Technologies, Inc. | Methods of making quantum dot films |
US7742322B2 (en) * | 2005-01-07 | 2010-06-22 | Invisage Technologies, Inc. | Electronic and optoelectronic devices with quantum dot films |
CA2519608A1 (en) | 2005-01-07 | 2006-07-07 | Edward Sargent | Quantum dot-polymer nanocomposite photodetectors and photovoltaics |
US7585721B2 (en) * | 2005-05-09 | 2009-09-08 | The Hong Kong Polytechnic University | Process and apparatus for fabricating nano-floating gate memories and memory made thereby |
US7601946B2 (en) | 2006-09-12 | 2009-10-13 | Ravenbrick, Llc | Electromagnetic sensor incorporating quantum confinement structures |
WO2008092038A1 (en) | 2007-01-24 | 2008-07-31 | Ravenbrick, Llc | Thermally switched optical downconverting filter |
US8363307B2 (en) | 2007-02-28 | 2013-01-29 | Ravenbrick, Llc | Multicolor light emitting device incorporating tunable quantum confinement devices |
US7936500B2 (en) | 2007-03-02 | 2011-05-03 | Ravenbrick Llc | Wavelength-specific optical switch |
KR101324196B1 (ko) * | 2007-06-05 | 2013-11-06 | 삼성전자주식회사 | 커패시터리스 디램 및 그의 제조방법 |
KR101265393B1 (ko) | 2007-07-11 | 2013-05-20 | 라벤브릭 엘엘씨 | 열적 절환식 반사형 광학 셔터 |
CA2703010A1 (en) | 2007-09-19 | 2009-03-26 | Ravenbrick, Llc | Low-emissivity window films and coatings incorporating nanoscale wire grids |
US8169685B2 (en) | 2007-12-20 | 2012-05-01 | Ravenbrick, Llc | Thermally switched absorptive window shutter |
KR101302802B1 (ko) | 2008-04-23 | 2013-09-02 | 라벤브릭 엘엘씨 | 반사성 및 열반사성 표면의 광택 조절 |
US9116302B2 (en) | 2008-06-19 | 2015-08-25 | Ravenbrick Llc | Optical metapolarizer device |
AU2009282812B2 (en) | 2008-08-20 | 2013-02-21 | Ravenbrick, Llc | Methods for fabricating thermochromic filters |
US8581317B2 (en) * | 2008-08-27 | 2013-11-12 | Texas Instruments Incorporated | SOI MuGFETs having single gate electrode level |
EP2417481B1 (de) | 2009-04-10 | 2016-11-16 | Ravenbrick, LLC | Optisches filter mit thermoschaltung und guest-host-architektur |
US8947760B2 (en) | 2009-04-23 | 2015-02-03 | Ravenbrick Llc | Thermotropic optical shutter incorporating coatable polarizers |
WO2011053853A2 (en) * | 2009-10-30 | 2011-05-05 | Ravenbrick Llc | Thermochromic filters and stopband filters for use with same |
WO2011062708A2 (en) | 2009-11-17 | 2011-05-26 | Ravenbrick Llc | Thermally switched optical filter incorporating a refractive optical structure |
AU2011235265A1 (en) | 2010-03-29 | 2012-10-25 | Ravenbrick Llc | Polymer-stabilized thermotropic liquid crystal device |
EP2576934A4 (de) | 2010-06-01 | 2014-01-01 | Ravenbrick Llc | Multifunktionelles konstruktionsteil |
TWI539453B (zh) | 2010-09-14 | 2016-06-21 | 半導體能源研究所股份有限公司 | 記憶體裝置和半導體裝置 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4958318A (en) * | 1988-07-08 | 1990-09-18 | Eliyahou Harari | Sidewall capacitor DRAM cell |
GB9226382D0 (en) * | 1992-12-18 | 1993-02-10 | Hitachi Europ Ltd | Memory device |
JP3156878B2 (ja) * | 1992-04-30 | 2001-04-16 | 株式会社東芝 | 半導体装置およびその製造方法 |
JP3613594B2 (ja) * | 1993-08-19 | 2005-01-26 | 株式会社ルネサステクノロジ | 半導体素子およびこれを用いた半導体記憶装置 |
JPH0936317A (ja) * | 1995-07-17 | 1997-02-07 | Matsushita Electric Ind Co Ltd | メモリ素子およびその製造方法 |
US6060723A (en) * | 1997-07-18 | 2000-05-09 | Hitachi, Ltd. | Controllable conduction device |
AT405109B (de) | 1997-05-21 | 1999-05-25 | Wasshuber Christoph Dipl Ing D | Ein-elektron speicherbauelement |
-
1997
- 1997-05-21 AT AT0086197A patent/AT405109B/de not_active IP Right Cessation
-
1998
- 1998-04-22 WO PCT/AT1998/000105 patent/WO1998053504A1/de active Application Filing
- 1998-04-22 AU AU70122/98A patent/AU7012298A/en not_active Abandoned
-
1999
- 1999-11-19 US US09/444,243 patent/US6487112B1/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
AT405109B (de) | 1999-05-25 |
US6487112B1 (en) | 2002-11-26 |
WO1998053504A1 (de) | 1998-11-26 |
AU7012298A (en) | 1998-12-11 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ELJ | Ceased due to non-payment of the annual fee |