DE69727877D1 - Elektronenröhre - Google Patents
ElektronenröhreInfo
- Publication number
- DE69727877D1 DE69727877D1 DE69727877T DE69727877T DE69727877D1 DE 69727877 D1 DE69727877 D1 DE 69727877D1 DE 69727877 T DE69727877 T DE 69727877T DE 69727877 T DE69727877 T DE 69727877T DE 69727877 D1 DE69727877 D1 DE 69727877D1
- Authority
- DE
- Germany
- Prior art keywords
- electron tube
- electron
- tube
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
- H01J29/94—Selection of substances for gas fillings; Means for obtaining or maintaining the desired pressure within the tube, e.g. by gettering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/30—Cold cathodes, e.g. field-emissive cathode
- H01J1/304—Field-emissive cathodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2201/00—Electrodes common to discharge tubes
- H01J2201/30—Cold cathodes
- H01J2201/304—Field emission cathodes
- H01J2201/30403—Field emission cathodes characterised by the emitter shape
- H01J2201/30426—Coatings on the emitter surface, e.g. with low work function materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2201/00—Electrodes common to discharge tubes
- H01J2201/30—Cold cathodes
- H01J2201/304—Field emission cathodes
- H01J2201/30446—Field emission cathodes characterised by the emitter material
- H01J2201/30453—Carbon types
- H01J2201/30457—Diamond
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2329/00—Electron emission display panels, e.g. field emission display panels
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP27078696A JP3745844B2 (ja) | 1996-10-14 | 1996-10-14 | 電子管 |
JP27078696 | 1996-10-14 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69727877D1 true DE69727877D1 (de) | 2004-04-08 |
DE69727877T2 DE69727877T2 (de) | 2005-03-03 |
Family
ID=17490986
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69727877T Expired - Fee Related DE69727877T2 (de) | 1996-10-14 | 1997-10-14 | Elektronenröhre |
Country Status (8)
Country | Link |
---|---|
US (1) | US5959400A (de) |
EP (1) | EP0836217B1 (de) |
JP (1) | JP3745844B2 (de) |
KR (1) | KR100488334B1 (de) |
CN (2) | CN1482646A (de) |
DE (1) | DE69727877T2 (de) |
ES (1) | ES2216112T3 (de) |
TW (1) | TW373220B (de) |
Families Citing this family (38)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0974156B1 (de) * | 1996-06-25 | 2004-10-13 | Vanderbilt University | Strukturen, anordnungen und vorrichtungen mit vakuum-feldemissions-mikrospitzen und verfahren zu deren herstellung |
KR100279051B1 (ko) | 1997-09-23 | 2001-02-01 | 박호군 | 다이아몬드 전계방출 소자의 제조방법 |
DE19757141A1 (de) * | 1997-12-20 | 1999-06-24 | Philips Patentverwaltung | Array aus Diamant/wasserstoffhaltigen Elektroden |
EP1003196A1 (de) * | 1998-11-19 | 2000-05-24 | Nec Corporation | Kohlenstoffmaterial und Verfahren zur Herstellung, Feldemissionskaltkathode die dieses Material verwendet und Verfahren zur Herstellung |
WO2001039235A2 (en) * | 1999-09-17 | 2001-05-31 | Vanderbilt University | Thermodynamic energy conversion devices and methods using a diamond-based electron emitter |
JP4792625B2 (ja) * | 2000-08-31 | 2011-10-12 | 住友電気工業株式会社 | 電子放出素子の製造方法及び電子デバイス |
JP3639808B2 (ja) | 2000-09-01 | 2005-04-20 | キヤノン株式会社 | 電子放出素子及び電子源及び画像形成装置及び電子放出素子の製造方法 |
JP3610325B2 (ja) * | 2000-09-01 | 2005-01-12 | キヤノン株式会社 | 電子放出素子、電子源及び画像形成装置の製造方法 |
JP3658346B2 (ja) | 2000-09-01 | 2005-06-08 | キヤノン株式会社 | 電子放出素子、電子源および画像形成装置、並びに電子放出素子の製造方法 |
JP3639809B2 (ja) | 2000-09-01 | 2005-04-20 | キヤノン株式会社 | 電子放出素子,電子放出装置,発光装置及び画像表示装置 |
JP3634781B2 (ja) | 2000-09-22 | 2005-03-30 | キヤノン株式会社 | 電子放出装置、電子源、画像形成装置及びテレビジョン放送表示装置 |
JP3768908B2 (ja) | 2001-03-27 | 2006-04-19 | キヤノン株式会社 | 電子放出素子、電子源、画像形成装置 |
US6743068B2 (en) * | 2001-03-31 | 2004-06-01 | Sony Corporation | Desorption processing for flat panel display |
DE10131420C2 (de) * | 2001-06-29 | 2003-07-10 | Lutz Fink | Halbleitersensor sowie Beschaltungsverfahren dafür |
JP3703415B2 (ja) | 2001-09-07 | 2005-10-05 | キヤノン株式会社 | 電子放出素子、電子源及び画像形成装置、並びに電子放出素子及び電子源の製造方法 |
JP3605105B2 (ja) | 2001-09-10 | 2004-12-22 | キヤノン株式会社 | 電子放出素子、電子源、発光装置、画像形成装置および基板の各製造方法 |
EP1437760B1 (de) * | 2001-09-28 | 2013-05-22 | Hamamatsu Photonics K.K. | Gasentladungsröhre |
JP3654236B2 (ja) * | 2001-11-07 | 2005-06-02 | 株式会社日立製作所 | 電極デバイスの製造方法 |
US6949873B2 (en) * | 2002-03-08 | 2005-09-27 | Chien-Min Sung | Amorphous diamond materials and associated methods for the use and manufacture thereof |
US7235912B2 (en) * | 2002-03-08 | 2007-06-26 | Chien-Min Sung | Diamond-like carbon thermoelectric conversion devices and methods for the use and manufacture thereof |
US6806629B2 (en) | 2002-03-08 | 2004-10-19 | Chien-Min Sung | Amorphous diamond materials and associated methods for the use and manufacture thereof |
US20070126312A1 (en) * | 2002-03-08 | 2007-06-07 | Chien-Min Sung | DLC field emission with nano-diamond impregnated metals |
JP2003263952A (ja) * | 2002-03-08 | 2003-09-19 | Hamamatsu Photonics Kk | 透過型2次電子面及び電子管 |
US7358658B2 (en) * | 2002-03-08 | 2008-04-15 | Chien-Min Sung | Amorphous diamond materials and associated methods for the use and manufacture thereof |
US20080029145A1 (en) * | 2002-03-08 | 2008-02-07 | Chien-Min Sung | Diamond-like carbon thermoelectric conversion devices and methods for the use and manufacture thereof |
JP5082186B2 (ja) * | 2004-03-29 | 2012-11-28 | 住友電気工業株式会社 | 炭素系材料突起の形成方法及び炭素系材料突起 |
JP4608692B2 (ja) * | 2004-12-14 | 2011-01-12 | 独立行政法人物質・材料研究機構 | 大気中電子放出特性を有する電子放出素子とその製造方法、および、この素子を使用した電子放出方法 |
WO2006064934A1 (ja) * | 2004-12-14 | 2006-06-22 | National Institute For Materials Science | 電界電子放出素子とその製造方法及びこの素子を使用した電子放出方法、並びに、電界電子放出素子を使用した発光・表示デバイスとその製造方法 |
EP1930932A4 (de) * | 2005-09-29 | 2009-09-02 | Sumitomo Electric Industries | Elektronenemissionselement und herstellungsverfahren für ein elektronenemissionselement |
JP2008021554A (ja) * | 2006-07-13 | 2008-01-31 | Sumitomo Electric Ind Ltd | 電子銃及び電子銃の製造方法 |
CN100583350C (zh) * | 2006-07-19 | 2010-01-20 | 清华大学 | 微型场发射电子器件 |
TWI366214B (en) | 2006-12-18 | 2012-06-11 | Ind Tech Res Inst | Electron emission device and light emitting method |
US7923915B2 (en) | 2006-12-18 | 2011-04-12 | Industrial Technology Research Institute | Display pixel structure and display apparatus |
US20080143241A1 (en) * | 2006-12-18 | 2008-06-19 | Industrial Technology Research Institute | Discharge field emission device, and light source apparatus and display apparatus applying the same |
US7809114B2 (en) * | 2008-01-21 | 2010-10-05 | General Electric Company | Field emitter based electron source for multiple spot X-ray |
US7826594B2 (en) * | 2008-01-21 | 2010-11-02 | General Electric Company | Virtual matrix control scheme for multiple spot X-ray source |
US10943760B2 (en) * | 2018-10-12 | 2021-03-09 | Kla Corporation | Electron gun and electron microscope |
CN109888482A (zh) * | 2018-12-28 | 2019-06-14 | 北京航空航天大学 | 一种脉冲太赫兹源及其制造方法 |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3432712A (en) * | 1966-11-17 | 1969-03-11 | Sylvania Electric Prod | Cathode ray tube having a perforated electrode for releasing a selected gas sorbed therein |
US3552818A (en) * | 1966-11-17 | 1971-01-05 | Sylvania Electric Prod | Method for processing a cathode ray tube having improved life |
JPS5062766A (de) * | 1973-10-05 | 1975-05-28 | ||
US4663559A (en) * | 1982-09-17 | 1987-05-05 | Christensen Alton O | Field emission device |
FR2669465B1 (fr) * | 1990-11-16 | 1996-07-12 | Thomson Rech | Source d'electrons et procede de realisation. |
US5283501A (en) * | 1991-07-18 | 1994-02-01 | Motorola, Inc. | Electron device employing a low/negative electron affinity electron source |
US5191217A (en) * | 1991-11-25 | 1993-03-02 | Motorola, Inc. | Method and apparatus for field emission device electrostatic electron beam focussing |
JPH05242794A (ja) * | 1991-11-29 | 1993-09-21 | Motorola Inc | 集積化された静電界レンズを有する電界放出デバイス |
US5252833A (en) * | 1992-02-05 | 1993-10-12 | Motorola, Inc. | Electron source for depletion mode electron emission apparatus |
US5619092A (en) * | 1993-02-01 | 1997-04-08 | Motorola | Enhanced electron emitter |
WO1994020975A1 (en) * | 1993-03-11 | 1994-09-15 | Fed Corporation | Emitter tip structure and field emission device comprising same, and method of making same |
US5396150A (en) * | 1993-07-01 | 1995-03-07 | Industrial Technology Research Institute | Single tip redundancy method and resulting flat panel display |
JPH0729483A (ja) * | 1993-07-16 | 1995-01-31 | Kobe Steel Ltd | 電子エミッタ素子 |
IT1269978B (it) * | 1994-07-01 | 1997-04-16 | Getters Spa | Metodo per la creazione ed il mantenimento di un'atmosfera controllata in un dispositivo ad emissione di campo tramite l'uso di un materiale getter |
JP3308755B2 (ja) * | 1994-09-16 | 2002-07-29 | 東京瓦斯株式会社 | 素子分離された水素終端ダイヤモンド半導体素子の製造方法 |
JP3394096B2 (ja) * | 1994-09-16 | 2003-04-07 | 東京瓦斯株式会社 | 水素終端ホモエピタキシャルダイヤモンドを用いたfetおよびその製造方法 |
US5709577A (en) * | 1994-12-22 | 1998-01-20 | Lucent Technologies Inc. | Method of making field emission devices employing ultra-fine diamond particle emitters |
US5679895A (en) * | 1995-05-01 | 1997-10-21 | Kobe Steel Usa, Inc. | Diamond field emission acceleration sensor |
US5543691A (en) * | 1995-05-11 | 1996-08-06 | Raytheon Company | Field emission display with focus grid and method of operating same |
US5684356A (en) * | 1996-03-29 | 1997-11-04 | Texas Instruments Incorporated | Hydrogen-rich, low dielectric constant gate insulator for field emission device |
FR2747839B1 (fr) * | 1996-04-18 | 1998-07-03 | Pixtech Sa | Ecran plat de visualisation a source d'hydrogene |
CN1119829C (zh) * | 1996-09-17 | 2003-08-27 | 浜松光子学株式会社 | 光电阴极及装备有它的电子管 |
-
1996
- 1996-10-14 JP JP27078696A patent/JP3745844B2/ja not_active Expired - Fee Related
-
1997
- 1997-10-13 TW TW086114944A patent/TW373220B/zh not_active IP Right Cessation
- 1997-10-13 CN CNA031787908A patent/CN1482646A/zh not_active Withdrawn
- 1997-10-13 CN CN97120094.7A patent/CN1120514C/zh not_active Expired - Fee Related
- 1997-10-14 EP EP97308065A patent/EP0836217B1/de not_active Expired - Lifetime
- 1997-10-14 ES ES97308065T patent/ES2216112T3/es not_active Expired - Lifetime
- 1997-10-14 DE DE69727877T patent/DE69727877T2/de not_active Expired - Fee Related
- 1997-10-14 KR KR1019970053614A patent/KR100488334B1/ko not_active IP Right Cessation
- 1997-10-14 US US08/950,177 patent/US5959400A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0836217A1 (de) | 1998-04-15 |
JP3745844B2 (ja) | 2006-02-15 |
CN1181607A (zh) | 1998-05-13 |
JPH10116555A (ja) | 1998-05-06 |
CN1482646A (zh) | 2004-03-17 |
KR19980032959A (ko) | 1998-07-25 |
CN1120514C (zh) | 2003-09-03 |
US5959400A (en) | 1999-09-28 |
EP0836217B1 (de) | 2004-03-03 |
DE69727877T2 (de) | 2005-03-03 |
KR100488334B1 (ko) | 2005-09-02 |
ES2216112T3 (es) | 2004-10-16 |
TW373220B (en) | 1999-11-01 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |