DE69810699D1 - Kompositkörper auf Aluminiumnitridbases, Material für elektronische Funktionen, elektrostatische Einspannvorrichtung und Verfahren zum Herstellen eines Kompositkörpers auf Aluminiumnitridbasis - Google Patents

Kompositkörper auf Aluminiumnitridbases, Material für elektronische Funktionen, elektrostatische Einspannvorrichtung und Verfahren zum Herstellen eines Kompositkörpers auf Aluminiumnitridbasis

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Publication number
DE69810699D1
DE69810699D1 DE69810699T DE69810699T DE69810699D1 DE 69810699 D1 DE69810699 D1 DE 69810699D1 DE 69810699 T DE69810699 T DE 69810699T DE 69810699 T DE69810699 T DE 69810699T DE 69810699 D1 DE69810699 D1 DE 69810699D1
Authority
DE
Germany
Prior art keywords
aluminum nitride
composite body
body based
producing
electrostatic chuck
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69810699T
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English (en)
Other versions
DE69810699T2 (de
Inventor
Yuji Katsuda
Kiyoshi Araki
Tsuneaki Ohashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NGK Insulators Ltd
Original Assignee
NGK Insulators Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NGK Insulators Ltd filed Critical NGK Insulators Ltd
Publication of DE69810699D1 publication Critical patent/DE69810699D1/de
Application granted granted Critical
Publication of DE69810699T2 publication Critical patent/DE69810699T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • C04B35/00Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/622Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/64Burning or sintering processes
    • C04B35/645Pressure sintering
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    • C04B35/00Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/515Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/58Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
    • C04B35/581Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on aluminium nitride
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833Details of electrostatic chucks
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/12Mountings, e.g. non-detachable insulating substrates
    • H01L23/14Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • H01L23/15Ceramic or glass substrates
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    • C04B2235/00Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3217Aluminum oxide or oxide forming salts thereof, e.g. bauxite, alpha-alumina
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    • C04B2235/00Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3217Aluminum oxide or oxide forming salts thereof, e.g. bauxite, alpha-alumina
    • C04B2235/322Transition aluminas, e.g. delta or gamma aluminas
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    • C04B2235/00Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3224Rare earth oxide or oxide forming salts thereof, e.g. scandium oxide
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    • C04B2235/00Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3224Rare earth oxide or oxide forming salts thereof, e.g. scandium oxide
    • C04B2235/3225Yttrium oxide or oxide-forming salts thereof
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    • C04B2235/00Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/65Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
    • C04B2235/656Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes characterised by specific heating conditions during heat treatment
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    • C04B2235/00Aspects relating to ceramic starting mixtures or sintered ceramic products
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    • C04B2235/656Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes characterised by specific heating conditions during heat treatment
    • C04B2235/6562Heating rate
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    • C04B2235/70Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/72Products characterised by the absence or the low content of specific components, e.g. alkali metal free alumina ceramics
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    • C04B2235/00Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/72Products characterised by the absence or the low content of specific components, e.g. alkali metal free alumina ceramics
    • C04B2235/723Oxygen content
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    • C04B2235/00Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/74Physical characteristics
    • C04B2235/78Grain sizes and shapes, product microstructures, e.g. acicular grains, equiaxed grains, platelet-structures
    • C04B2235/786Micrometer sized grains, i.e. from 1 to 100 micron
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    • C04B2235/00Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/80Phases present in the sintered or melt-cast ceramic products other than the main phase
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Structural Engineering (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Ceramic Products (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Jigs For Machine Tools (AREA)
DE69810699T 1997-06-06 1998-06-01 Kompositkörper auf Aluminiumnitridbases, Material für elektronische Funktionen, elektrostatische Einspannvorrichtung und Verfahren zum Herstellen eines Kompositkörpers auf Aluminiumnitridbasis Expired - Lifetime DE69810699T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16351197A JP3670444B2 (ja) 1997-06-06 1997-06-06 窒化アルミニウム基複合体、電子機能材料、静電チャックおよび窒化アルミニウム基複合体の製造方法

Publications (2)

Publication Number Publication Date
DE69810699D1 true DE69810699D1 (de) 2003-02-20
DE69810699T2 DE69810699T2 (de) 2003-11-06

Family

ID=15775261

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69810699T Expired - Lifetime DE69810699T2 (de) 1997-06-06 1998-06-01 Kompositkörper auf Aluminiumnitridbases, Material für elektronische Funktionen, elektrostatische Einspannvorrichtung und Verfahren zum Herstellen eines Kompositkörpers auf Aluminiumnitridbasis

Country Status (6)

Country Link
US (1) US5993699A (de)
EP (1) EP0882689B1 (de)
JP (1) JP3670444B2 (de)
KR (1) KR100278904B1 (de)
DE (1) DE69810699T2 (de)
TW (1) TW536528B (de)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4013386B2 (ja) 1998-03-02 2007-11-28 住友電気工業株式会社 半導体製造用保持体およびその製造方法
JP4003907B2 (ja) * 1998-07-08 2007-11-07 コバレントマテリアル株式会社 窒化アルミニウム焼結体からなる半導体製造装置関連製品及びその製造方法並びに静電チャック、サセプタ、ダミーウエハ、クランプリング及びパーティクルキャッチャー
WO2001013423A1 (fr) * 1999-08-10 2001-02-22 Ibiden Co., Ltd. Plaque ceramique pour dispositif de production de semi-conducteurs
JP4447750B2 (ja) 1999-09-30 2010-04-07 日本碍子株式会社 窒化アルミニウム焼結体および半導体製造用部材
DE10085268T1 (de) 1999-12-09 2002-12-12 Saint Gobain Ceramics Elektrostatische Scheibenhalter mit Flachfilmelektrode
US6723274B1 (en) * 1999-12-09 2004-04-20 Saint-Gobain Ceramics & Plastics, Inc. High-purity low-resistivity electrostatic chucks
US6603650B1 (en) 1999-12-09 2003-08-05 Saint-Gobain Ceramics And Plastics, Inc. Electrostatic chuck susceptor and method for fabrication
JP2005281046A (ja) 2004-03-29 2005-10-13 Ngk Insulators Ltd 窒化アルミニウム基板及びその製造方法
JP5062959B2 (ja) * 2005-03-25 2012-10-31 日本碍子株式会社 セラミックス部材及びその製造方法
WO2008018302A1 (fr) * 2006-08-07 2008-02-14 Tokuyama Corporation Corps fritté en nitrure d'aluminium et son procédé de production
JP5173702B2 (ja) * 2008-09-26 2013-04-03 京セラ株式会社 静電チャック
WO2010109960A1 (ja) * 2009-03-26 2010-09-30 株式会社東芝 窒化アルミニウム基板、窒化アルミニウム回路基板、半導体装置および窒化アルミニウム基板の製造方法
EP2581357B1 (de) * 2010-06-08 2018-02-21 Denka Company Limited Leiterplatte enthaltend ein aluminiumnitridsubstrat und herstellungsverfahren dafür
JP2015501372A (ja) 2011-09-29 2015-01-15 ナイトライド ソリューションズ インコーポレイテッド 無機材料、それを作製する方法及び装置、並びにその使用
CN106687855A (zh) * 2014-10-16 2017-05-17 堺显示器制品株式会社 显示装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5001089A (en) * 1985-06-28 1991-03-19 Kabushiki Kaisha Toshiba Aluminum nitride sintered body
US5314850A (en) * 1985-10-31 1994-05-24 Kyocera Corporation Aluminum nitride sintered body and production thereof
JP3152847B2 (ja) * 1994-09-30 2001-04-03 京セラ株式会社 静電チャック
JP3181006B2 (ja) * 1994-08-11 2001-07-03 京セラ株式会社 静電チャック
JP3180998B2 (ja) * 1994-02-09 2001-07-03 京セラ株式会社 静電チャック
JP3145574B2 (ja) * 1994-08-09 2001-03-12 京セラ株式会社 セラミック抵抗体
JP3670416B2 (ja) * 1995-11-01 2005-07-13 日本碍子株式会社 金属包含材および静電チャック
JP3457495B2 (ja) * 1996-03-29 2003-10-20 日本碍子株式会社 窒化アルミニウム焼結体、金属埋設品、電子機能材料および静電チャック

Also Published As

Publication number Publication date
JP3670444B2 (ja) 2005-07-13
US5993699A (en) 1999-11-30
EP0882689B1 (de) 2003-01-15
KR100278904B1 (ko) 2001-01-15
TW536528B (en) 2003-06-11
JPH10338574A (ja) 1998-12-22
EP0882689A3 (de) 1999-06-30
EP0882689A2 (de) 1998-12-09
KR19990006623A (ko) 1999-01-25
DE69810699T2 (de) 2003-11-06

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