DE69620654T2 - Ferroelektrischer Speicher und Verfahren für seine Betriebswirkung - Google Patents
Ferroelektrischer Speicher und Verfahren für seine BetriebswirkungInfo
- Publication number
- DE69620654T2 DE69620654T2 DE69620654T DE69620654T DE69620654T2 DE 69620654 T2 DE69620654 T2 DE 69620654T2 DE 69620654 T DE69620654 T DE 69620654T DE 69620654 T DE69620654 T DE 69620654T DE 69620654 T2 DE69620654 T2 DE 69620654T2
- Authority
- DE
- Germany
- Prior art keywords
- voltage
- capacitor
- memory cell
- signal line
- data signal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000015654 memory Effects 0.000 title claims description 256
- 238000000034 method Methods 0.000 title claims description 39
- 239000003990 capacitor Substances 0.000 claims description 164
- 230000008859 change Effects 0.000 claims description 28
- 230000010287 polarization Effects 0.000 claims description 17
- 239000000463 material Substances 0.000 claims description 7
- 230000005540 biological transmission Effects 0.000 claims 4
- 238000003491 array Methods 0.000 claims 2
- 238000010586 diagram Methods 0.000 description 22
- 230000003071 parasitic effect Effects 0.000 description 13
- 230000001629 suppression Effects 0.000 description 12
- 230000008878 coupling Effects 0.000 description 4
- 238000010168 coupling process Methods 0.000 description 4
- 238000005859 coupling reaction Methods 0.000 description 4
- 230000002269 spontaneous effect Effects 0.000 description 4
- 230000003321 amplification Effects 0.000 description 3
- 230000000295 complement effect Effects 0.000 description 3
- 238000003199 nucleic acid amplification method Methods 0.000 description 3
- 230000009471 action Effects 0.000 description 2
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 230000000717 retained effect Effects 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 230000004913 activation Effects 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Dram (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7000063A JP2748873B2 (ja) | 1995-01-04 | 1995-01-04 | 強誘電体メモリ装置およびその動作制御方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE69620654D1 DE69620654D1 (de) | 2002-05-23 |
| DE69620654T2 true DE69620654T2 (de) | 2002-11-28 |
Family
ID=11463743
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE69620654T Expired - Fee Related DE69620654T2 (de) | 1995-01-04 | 1996-01-04 | Ferroelektrischer Speicher und Verfahren für seine Betriebswirkung |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US5610852A (enExample) |
| EP (1) | EP0721190B1 (enExample) |
| JP (1) | JP2748873B2 (enExample) |
| KR (1) | KR100237267B1 (enExample) |
| DE (1) | DE69620654T2 (enExample) |
| TW (1) | TW305997B (enExample) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100601928B1 (ko) * | 1996-06-10 | 2006-10-04 | 삼성전자주식회사 | 강유전체랜덤액세서메모리의비휘발성유지장치및방법 |
| JP2003078037A (ja) * | 2001-09-04 | 2003-03-14 | Nec Corp | 半導体メモリ装置 |
| US6954397B2 (en) * | 2003-07-24 | 2005-10-11 | Texas Instruments Incorporated | Circuit for reducing standby leakage in a memory unit |
| JP4079910B2 (ja) | 2004-05-28 | 2008-04-23 | 富士通株式会社 | 強誘電体メモリ |
| US7164595B1 (en) | 2005-08-25 | 2007-01-16 | Micron Technology, Inc. | Device and method for using dynamic cell plate sensing in a DRAM memory cell |
| WO2007029320A1 (ja) * | 2005-09-07 | 2007-03-15 | Fujitsu Limited | 強誘電体メモリ |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58100294A (ja) * | 1981-12-11 | 1983-06-14 | Toshiba Corp | 差動形センス回路 |
| JPS6282597A (ja) * | 1985-10-08 | 1987-04-16 | Fujitsu Ltd | 半導体記憶装置 |
| US4873664A (en) * | 1987-02-12 | 1989-10-10 | Ramtron Corporation | Self restoring ferroelectric memory |
| US4888733A (en) * | 1988-09-12 | 1989-12-19 | Ramtron Corporation | Non-volatile memory cell and sensing method |
| JPH0713877B2 (ja) * | 1988-10-19 | 1995-02-15 | 株式会社東芝 | 半導体メモリ |
| KR930002470B1 (ko) * | 1989-03-28 | 1993-04-02 | 가부시키가이샤 도시바 | 전기적인 독출/기록동작이 가능한 불휘발성 반도체기억장치 및 그 정보독출방법 |
| US5400275A (en) * | 1990-06-08 | 1995-03-21 | Kabushiki Kaisha Toshiba | Semiconductor memory device using ferroelectric capacitor and having only one sense amplifier selected |
| US5031143A (en) * | 1990-11-21 | 1991-07-09 | National Semiconductor Corporation | Preamplifier for ferroelectric memory device sense amplifier |
| US5357460A (en) * | 1991-05-28 | 1994-10-18 | Sharp Kabushiki Kaisha | Semiconductor memory device having two transistors and at least one ferroelectric film capacitor |
| US5198706A (en) * | 1991-10-15 | 1993-03-30 | National Semiconductor | Ferroelectric programming cell for configurable logic |
| US5309391A (en) * | 1992-10-02 | 1994-05-03 | National Semiconductor Corporation | Symmetrical polarization enhancement in a ferroelectric memory cell |
| JP3278981B2 (ja) * | 1993-06-23 | 2002-04-30 | 株式会社日立製作所 | 半導体メモリ |
| US5381364A (en) * | 1993-06-24 | 1995-01-10 | Ramtron International Corporation | Ferroelectric-based RAM sensing scheme including bit-line capacitance isolation |
| JP3191549B2 (ja) * | 1994-02-15 | 2001-07-23 | 松下電器産業株式会社 | 半導体メモリ装置 |
-
1995
- 1995-01-04 JP JP7000063A patent/JP2748873B2/ja not_active Expired - Fee Related
- 1995-12-29 TW TW084114117A patent/TW305997B/zh not_active IP Right Cessation
-
1996
- 1996-01-04 EP EP96100076A patent/EP0721190B1/en not_active Expired - Lifetime
- 1996-01-04 KR KR1019960000022A patent/KR100237267B1/ko not_active Expired - Fee Related
- 1996-01-04 DE DE69620654T patent/DE69620654T2/de not_active Expired - Fee Related
- 1996-01-04 US US08/582,619 patent/US5610852A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| EP0721190A2 (en) | 1996-07-10 |
| EP0721190B1 (en) | 2002-04-17 |
| DE69620654D1 (de) | 2002-05-23 |
| EP0721190A3 (en) | 1999-01-20 |
| TW305997B (enExample) | 1997-05-21 |
| KR100237267B1 (ko) | 2000-01-15 |
| KR960030237A (ko) | 1996-08-17 |
| US5610852A (en) | 1997-03-11 |
| JP2748873B2 (ja) | 1998-05-13 |
| JPH08185693A (ja) | 1996-07-16 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8364 | No opposition during term of opposition | ||
| 8327 | Change in the person/name/address of the patent owner |
Owner name: NEC ELECTRONICS CORP., KAWASAKI, KANAGAWA, JP |
|
| 8339 | Ceased/non-payment of the annual fee |