DE69620372T2 - Verfahren und Vorrichtung zum Waschen oder zum Waschen-Trocknen von Substraten - Google Patents

Verfahren und Vorrichtung zum Waschen oder zum Waschen-Trocknen von Substraten

Info

Publication number
DE69620372T2
DE69620372T2 DE69620372T DE69620372T DE69620372T2 DE 69620372 T2 DE69620372 T2 DE 69620372T2 DE 69620372 T DE69620372 T DE 69620372T DE 69620372 T DE69620372 T DE 69620372T DE 69620372 T2 DE69620372 T2 DE 69620372T2
Authority
DE
Germany
Prior art keywords
washing
drying substrates
substrates
drying
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69620372T
Other languages
English (en)
Other versions
DE69620372D1 (de
Inventor
Yuuji Kamikawa
Kinya Ueno
Naoki Shindo
Yoshio Kumagai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP07345277A external-priority patent/JP3127353B2/ja
Priority claimed from JP07138296A external-priority patent/JP3545531B2/ja
Priority claimed from JP19546196A external-priority patent/JPH1022257A/ja
Priority claimed from JP20636696A external-priority patent/JP3232442B2/ja
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of DE69620372D1 publication Critical patent/DE69620372D1/de
Application granted granted Critical
Publication of DE69620372T2 publication Critical patent/DE69620372T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
    • B08B3/102—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration with means for agitating the liquid
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S134/00—Cleaning and liquid contact with solids
    • Y10S134/902—Semiconductor wafer
DE69620372T 1995-12-07 1996-12-05 Verfahren und Vorrichtung zum Waschen oder zum Waschen-Trocknen von Substraten Expired - Fee Related DE69620372T2 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP07345277A JP3127353B2 (ja) 1995-12-07 1995-12-07 処理方法及び処理装置
JP07138296A JP3545531B2 (ja) 1996-03-01 1996-03-01 処理装置および処理方法
JP19546196A JPH1022257A (ja) 1996-07-05 1996-07-05 乾燥処理装置
JP20636696A JP3232442B2 (ja) 1996-07-18 1996-07-18 洗浄処理方法、洗浄・乾燥処理方法及びその装置

Publications (2)

Publication Number Publication Date
DE69620372D1 DE69620372D1 (de) 2002-05-08
DE69620372T2 true DE69620372T2 (de) 2002-11-21

Family

ID=27465360

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69620372T Expired - Fee Related DE69620372T2 (de) 1995-12-07 1996-12-05 Verfahren und Vorrichtung zum Waschen oder zum Waschen-Trocknen von Substraten

Country Status (5)

Country Link
US (1) US6001191A (de)
EP (1) EP0782889B1 (de)
KR (1) KR100376036B1 (de)
DE (1) DE69620372T2 (de)
TW (1) TW310452B (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE112007000442B4 (de) * 2006-03-29 2012-02-23 Tokyo Electron Ltd. Substratbearbeitungsverfahren, Speichermedium und Substratbearbeitungseinrichtung

Families Citing this family (42)

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US6050275A (en) * 1996-09-27 2000-04-18 Tokyo Electron Limited Apparatus for and method of cleaning objects to be processed
JP3171807B2 (ja) * 1997-01-24 2001-06-04 東京エレクトロン株式会社 洗浄装置及び洗浄方法
US6350322B1 (en) * 1997-03-21 2002-02-26 Micron Technology, Inc. Method of reducing water spotting and oxide growth on a semiconductor structure
JPH11176798A (ja) * 1997-12-08 1999-07-02 Toshiba Corp 基板洗浄・乾燥装置及び方法
US6616774B2 (en) * 1997-12-26 2003-09-09 Spc Electronics Wafer cleaning device and tray for use in wafer cleaning device
FR2775675B1 (fr) * 1998-03-09 2000-06-09 Soitec Silicon On Insulator Support de plaquettes pour la micro-electronique et procede d'utilisation de ce support
JP4200565B2 (ja) * 1998-06-24 2008-12-24 日立金属株式会社 電子部品の洗浄方法
US6328809B1 (en) 1998-10-09 2001-12-11 Scp Global Technologies, Inc. Vapor drying system and method
TW499696B (en) * 1999-04-27 2002-08-21 Tokyo Electron Ltd Processing apparatus and processing method
JP3448613B2 (ja) * 1999-06-29 2003-09-22 オメガセミコン電子株式会社 乾燥装置
DE10036867B4 (de) * 1999-07-30 2006-04-13 Tokyo Electron Ltd. Substrat-Bearbeitungsverfahren und -vorrichtung
JP2001176833A (ja) 1999-12-14 2001-06-29 Tokyo Electron Ltd 基板処理装置
US6620260B2 (en) * 2000-05-15 2003-09-16 Tokyo Electron Limited Substrate rinsing and drying method
JP2002075156A (ja) 2000-09-01 2002-03-15 Nec Corp マイクロスイッチおよびその製造方法
TW490072U (en) * 2000-10-12 2002-06-01 Ritdisplay Corp Apparatus for stripping photoresist
US6732749B2 (en) * 2000-12-22 2004-05-11 Akrion, Llc Particle barrier drain
KR100513397B1 (ko) * 2001-01-12 2005-09-09 삼성전자주식회사 반도체 웨이퍼 세정시스템 및 그 세정액 공급방법
TW538472B (en) * 2001-04-27 2003-06-21 Kobe Steel Ltd Method and system for processing substrate
US6519869B2 (en) * 2001-05-15 2003-02-18 United Microelectronics, Corp. Method and apparatus for drying semiconductor wafers
US20070079932A1 (en) * 2001-12-07 2007-04-12 Applied Materials, Inc. Directed purge for contact free drying of wafers
US6726848B2 (en) * 2001-12-07 2004-04-27 Scp Global Technologies, Inc. Apparatus and method for single substrate processing
US20090029560A1 (en) * 2001-12-07 2009-01-29 Applied Materials, Inc. Apparatus and method for single substrate processing
US20080000495A1 (en) * 2001-12-07 2008-01-03 Eric Hansen Apparatus and method for single substrate processing
JP3592702B1 (ja) * 2003-08-12 2004-11-24 エス・イー・エス株式会社 基板処理方法及び基板処理装置
DE10359615A1 (de) * 2003-12-18 2005-07-28 BSH Bosch und Siemens Hausgeräte GmbH Geschirrspülmaschine mit Filtersystem
US8474468B2 (en) * 2006-09-30 2013-07-02 Tokyo Electron Limited Apparatus and method for thermally processing a substrate with a heated liquid
US7479463B2 (en) * 2007-03-09 2009-01-20 Tokyo Electron Limited Method for heating a chemically amplified resist layer carried on a rotating substrate
US9383138B2 (en) * 2007-03-30 2016-07-05 Tokyo Electron Limited Methods and heat treatment apparatus for uniformly heating a substrate during a bake process
US20080241400A1 (en) * 2007-03-31 2008-10-02 Tokyo Electron Limited Vacuum assist method and system for reducing intermixing of lithography layers
US20080237158A1 (en) * 2007-04-02 2008-10-02 Sae Magnetics (H.K.) Ltd. Cleaning tray for electrical components and carrying tool with the same
JP5159738B2 (ja) 2009-09-24 2013-03-13 株式会社東芝 半導体基板の洗浄方法および半導体基板の洗浄装置
GB2476315A (en) 2009-12-21 2011-06-22 Rec Wafer Norway As Cleaning a stack of thin wafers
KR101450965B1 (ko) * 2011-09-29 2014-10-15 다이닛뽕스크린 세이조오 가부시키가이샤 기판처리장치 및 기판처리방법
JP5911689B2 (ja) * 2011-09-29 2016-04-27 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
RU2510098C1 (ru) * 2012-07-27 2014-03-20 Открытое акционерное общество "Научно-исследовательский институт полупроводникового машиностроения" Способ и устройство отмывки и сушки подложек
JP6084412B2 (ja) * 2012-09-20 2017-02-22 ヒューグルエレクトロニクス株式会社 基板ケース洗浄装置
JP5943519B2 (ja) * 2012-09-20 2016-07-05 ヒューグルエレクトロニクス株式会社 基板ケース洗浄装置
JP6025250B2 (ja) * 2012-09-20 2016-11-16 ヒューグルエレクトロニクス株式会社 基板ケース洗浄装置
JP5959381B2 (ja) * 2012-09-20 2016-08-02 ヒューグルエレクトロニクス株式会社 基板ケース洗浄装置
EP3290996A1 (de) * 2016-08-29 2018-03-07 Schneider GmbH & Co. KG Vorrichtung und verfahren zum reinigen einer linse
TWI645913B (zh) * 2016-11-10 2019-01-01 辛耘企業股份有限公司 液體製程裝置
CN217748362U (zh) * 2022-07-28 2022-11-08 常州捷佳创精密机械有限公司 一种兼容的槽体结构以及清洗设备

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60223130A (ja) * 1984-04-19 1985-11-07 Sharp Corp 基板の洗滌乾燥方法及びその装置
US4778532A (en) * 1985-06-24 1988-10-18 Cfm Technologies Limited Partnership Process and apparatus for treating wafers with process fluids
US4911761A (en) * 1984-05-21 1990-03-27 Cfm Technologies Research Associates Process and apparatus for drying surfaces
JPH0682647B2 (ja) 1986-02-21 1994-10-19 日立東京エレクトロニクス株式会社 処理装置
JPH01138721A (ja) * 1987-11-25 1989-05-31 Nec Yamaguchi Ltd ウェットエッチング装置
JPH073634Y2 (ja) * 1987-12-28 1995-01-30 株式会社トムコ ウェハ液洗乾燥装置
NL8900480A (nl) 1989-02-27 1990-09-17 Philips Nv Werkwijze en inrichting voor het drogen van substraten na behandeling in een vloeistof.
US4977688A (en) * 1989-10-27 1990-12-18 Semifab Incorporated Vapor device and method for drying articles such as semiconductor wafers with substances such as isopropyl alcohol
JPH06103686B2 (ja) 1989-11-24 1994-12-14 シー エフ エム テクノロジーズ，インコーポレイテッド 表面乾燥処理方法および装置
JP2639771B2 (ja) * 1991-11-14 1997-08-13 大日本スクリーン製造株式会社 基板の洗浄・乾燥処理方法並びにその処理装置
JPH06103686A (ja) * 1992-09-17 1994-04-15 Csk Corp リーダーライタ装置
JP3194209B2 (ja) * 1992-11-10 2001-07-30 東京エレクトロン株式会社 洗浄処理装置
JP2921781B2 (ja) * 1993-01-23 1999-07-19 東京エレクトロン株式会社 洗浄装置及び洗浄方法
JP3347814B2 (ja) * 1993-05-17 2002-11-20 大日本スクリーン製造株式会社 基板の洗浄・乾燥処理方法並びにその処理装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE112007000442B4 (de) * 2006-03-29 2012-02-23 Tokyo Electron Ltd. Substratbearbeitungsverfahren, Speichermedium und Substratbearbeitungseinrichtung
US8133327B2 (en) 2006-03-29 2012-03-13 Tokyo Electron Limited Substrate processing method, storage medium and substrate processing apparatus

Also Published As

Publication number Publication date
EP0782889A2 (de) 1997-07-09
EP0782889B1 (de) 2002-04-03
DE69620372D1 (de) 2002-05-08
KR100376036B1 (ko) 2003-06-19
KR970052714A (ko) 1997-07-29
TW310452B (de) 1997-07-11
US6001191A (en) 1999-12-14
EP0782889A3 (de) 1998-07-08

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee