DE69610021D1 - Verfahren und Vorrichtung zur Herstellung von Einkristallen durch die Czochralski-Technik - Google Patents

Verfahren und Vorrichtung zur Herstellung von Einkristallen durch die Czochralski-Technik

Info

Publication number
DE69610021D1
DE69610021D1 DE69610021T DE69610021T DE69610021D1 DE 69610021 D1 DE69610021 D1 DE 69610021D1 DE 69610021 T DE69610021 T DE 69610021T DE 69610021 T DE69610021 T DE 69610021T DE 69610021 D1 DE69610021 D1 DE 69610021D1
Authority
DE
Germany
Prior art keywords
single crystals
producing single
czochralski technique
czochralski
technique
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69610021T
Other languages
English (en)
Other versions
DE69610021T2 (de
Inventor
Masahiro Sakurada
Tomohiko Ohta
Kiyotaka Takano
Masanori Kimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Handotai Co Ltd
Original Assignee
Shin Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Publication of DE69610021D1 publication Critical patent/DE69610021D1/de
Application granted granted Critical
Publication of DE69610021T2 publication Critical patent/DE69610021T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1068—Seed pulling including heating or cooling details [e.g., shield configuration]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
    • Y10T117/1088—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone including heating or cooling details
DE69610021T 1995-06-09 1996-06-03 Verfahren und Vorrichtung zur Herstellung von Einkristallen durch die Czochralski-Technik Expired - Fee Related DE69610021T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP07143586A JP3128795B2 (ja) 1995-06-09 1995-06-09 チョクラルスキー法による結晶製造装置および製造方法

Publications (2)

Publication Number Publication Date
DE69610021D1 true DE69610021D1 (de) 2000-10-05
DE69610021T2 DE69610021T2 (de) 2001-05-03

Family

ID=15342187

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69610021T Expired - Fee Related DE69610021T2 (de) 1995-06-09 1996-06-03 Verfahren und Vorrichtung zur Herstellung von Einkristallen durch die Czochralski-Technik

Country Status (5)

Country Link
US (2) US5817171A (de)
EP (1) EP0747515B1 (de)
JP (1) JP3128795B2 (de)
KR (1) KR100270056B1 (de)
DE (1) DE69610021T2 (de)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3006669B2 (ja) * 1995-06-20 2000-02-07 信越半導体株式会社 結晶欠陥の均一なシリコン単結晶の製造方法およびその製造装置
JP3533812B2 (ja) * 1996-02-14 2004-05-31 信越半導体株式会社 チョクラルスキー法による結晶製造装置、結晶製造方法、およびこの方法から製造される結晶
JPH10152395A (ja) * 1996-11-21 1998-06-09 Komatsu Electron Metals Co Ltd シリコン単結晶の製造方法
KR100395181B1 (ko) * 1997-08-26 2003-08-21 미츠비시 스미토모 실리콘 주식회사 고품질 실리콘 단결정 및 그 제조방법
JP3919308B2 (ja) * 1997-10-17 2007-05-23 信越半導体株式会社 結晶欠陥の少ないシリコン単結晶の製造方法ならびにこの方法で製造されたシリコン単結晶およびシリコンウエーハ
US5968263A (en) * 1998-04-01 1999-10-19 Memc Electronic Materials, Inc. Open-loop method and system for controlling growth of semiconductor crystal
EP1089785A1 (de) 1998-06-22 2001-04-11 Neovasys, Inc. Verfahren, implantat und abgabesystem zur steigerung der blutströmung in geweben
US6835245B2 (en) * 2000-06-22 2004-12-28 Sumitomo Mitsubishi Silicon Corporation Method of manufacturing epitaxial wafer and method of producing single crystal as material therefor
KR100445187B1 (ko) * 2000-12-05 2004-08-18 주식회사 실트론 단결정 실리콘 잉곳 및 그 제조방법과 제조 장치
KR20040044146A (ko) * 2002-11-19 2004-05-27 가부시끼가이샤 도꾸야마 플루오르화 금속용 단결정 인출 장치
KR100843019B1 (ko) * 2006-12-22 2008-07-01 주식회사 실트론 쵸크랄스키법에 의한 반도체 단결정 잉곳 제조 장치에사용되는 열 환경 제공 모듈 및 이를 이용한 장치
CN100513652C (zh) * 2007-05-24 2009-07-15 北京有色金属研究总院 降埚直拉法生长低位错锗单晶工艺及装置
JP5375809B2 (ja) * 2010-12-06 2013-12-25 信越半導体株式会社 断熱筒、断熱筒の製造方法及び単結晶製造装置
JP5500134B2 (ja) * 2011-08-10 2014-05-21 信越半導体株式会社 単結晶育成装置
JP5585554B2 (ja) * 2011-08-26 2014-09-10 信越半導体株式会社 単結晶育成装置
JP6398640B2 (ja) * 2014-11-18 2018-10-03 住友電気工業株式会社 炭化珪素単結晶の製造方法および炭化珪素単結晶の製造装置
US10724150B2 (en) * 2015-11-13 2020-07-28 Sumco Corporation Method of manufacturing silicon single crystal

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6046998A (ja) * 1983-08-26 1985-03-14 Sumitomo Electric Ind Ltd 単結晶引上方法及びそのための装置
JPS6096596A (ja) * 1983-10-28 1985-05-30 Sumitomo Electric Ind Ltd 単結晶引上げ軸
DE3743951A1 (de) * 1986-12-26 1988-07-07 Toshiba Ceramics Co Einrichtung zum ziehen von siliziumeinkristallen mit einem waermeisolierzylinder und verfahren zur herstellung des materials desselben
JP2553633B2 (ja) * 1988-05-19 1996-11-13 住友電気工業株式会社 高温炉の断熱方法
JPH0259489A (ja) * 1988-08-25 1990-02-28 Shin Etsu Handotai Co Ltd 化合物半導体単結晶の製造方法
DE4204777A1 (de) * 1991-02-20 1992-10-08 Sumitomo Metal Ind Vorrichtung und verfahren zum zuechten von einkristallen
JPH09227286A (ja) * 1996-02-24 1997-09-02 Komatsu Electron Metals Co Ltd 単結晶製造装置

Also Published As

Publication number Publication date
DE69610021T2 (de) 2001-05-03
EP0747515A2 (de) 1996-12-11
EP0747515A3 (de) 1997-03-26
JP3128795B2 (ja) 2001-01-29
KR100270056B1 (ko) 2000-10-16
US5817171A (en) 1998-10-06
JPH08337491A (ja) 1996-12-24
US5938842A (en) 1999-08-17
EP0747515B1 (de) 2000-08-30

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee