DE69724612D1 - Vorrichtung und verfahren zur herstellung von kristallen durch die czochralskimethode und durch diese methode hergestellte kristallen - Google Patents

Vorrichtung und verfahren zur herstellung von kristallen durch die czochralskimethode und durch diese methode hergestellte kristallen

Info

Publication number
DE69724612D1
DE69724612D1 DE69724612T DE69724612T DE69724612D1 DE 69724612 D1 DE69724612 D1 DE 69724612D1 DE 69724612 T DE69724612 T DE 69724612T DE 69724612 T DE69724612 T DE 69724612T DE 69724612 D1 DE69724612 D1 DE 69724612D1
Authority
DE
Germany
Prior art keywords
crystals
czochralskimethode
producing
produced
crystals produced
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69724612T
Other languages
English (en)
Other versions
DE69724612T2 (de
Inventor
Masahiro Sakurada
Yuichi Miyahara
Tomohiko Ohta
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Handotai Co Ltd
Original Assignee
Shin Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Publication of DE69724612D1 publication Critical patent/DE69724612D1/de
Application granted granted Critical
Publication of DE69724612T2 publication Critical patent/DE69724612T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/08—Germanium
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/42—Gallium arsenide
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/44—Gallium phosphide
DE69724612T 1996-02-14 1997-02-12 Vorrichtung und verfahren zur herstellung von kristallen durch die czochralskimethode und durch diese methode hergestellte kristallen Expired - Lifetime DE69724612T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP5089896 1996-02-14
JP05089896A JP3533812B2 (ja) 1996-02-14 1996-02-14 チョクラルスキー法による結晶製造装置、結晶製造方法、およびこの方法から製造される結晶
PCT/JP1997/000359 WO1997030195A1 (fr) 1996-02-14 1997-02-12 Appareil et procede de production de cristaux a l'aide de la technique de czochralski et cristaux ainsi produits

Publications (2)

Publication Number Publication Date
DE69724612D1 true DE69724612D1 (de) 2003-10-09
DE69724612T2 DE69724612T2 (de) 2004-08-05

Family

ID=12871570

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69724612T Expired - Lifetime DE69724612T2 (de) 1996-02-14 1997-02-12 Vorrichtung und verfahren zur herstellung von kristallen durch die czochralskimethode und durch diese methode hergestellte kristallen

Country Status (6)

Country Link
US (1) US6071337A (de)
EP (1) EP0903427B1 (de)
JP (1) JP3533812B2 (de)
KR (1) KR100421125B1 (de)
DE (1) DE69724612T2 (de)
WO (1) WO1997030195A1 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19622664A1 (de) * 1996-06-05 1997-12-11 Wacker Siltronic Halbleitermat Verfahren und Vorrichtung zur Herstellung von Einkristallen
KR100395181B1 (ko) * 1997-08-26 2003-08-21 미츠비시 스미토모 실리콘 주식회사 고품질 실리콘 단결정 및 그 제조방법
JPH11349393A (ja) * 1998-06-03 1999-12-21 Shin Etsu Handotai Co Ltd シリコン単結晶ウエーハおよびシリコン単結晶ウエーハの製造方法
DE69902911T2 (de) * 1998-06-26 2003-01-16 Memc Electronic Materials Widerstandsheizung fur eine kristallzüchtungsvorrichtung und verfahren zu ihrer verwendung
DE19912484A1 (de) * 1999-03-19 2000-09-28 Freiberger Compound Mat Gmbh Vorrichtung zur Herstellung von Einkristallen
US6663709B2 (en) 2001-06-26 2003-12-16 Memc Electronic Materials, Inc. Crystal puller and method for growing monocrystalline silicon ingots
JP4486889B2 (ja) 2002-11-12 2010-06-23 エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド 単結晶インゴットを成長させる方法及び結晶引上げ装置
JP5439972B2 (ja) * 2009-06-19 2014-03-12 株式会社Ｓｕｍｃｏ 大口径シリコン単結晶の製造方法
CN102400210A (zh) * 2010-09-08 2012-04-04 北京有色金属研究总院 一种直拉硅单晶棒内缺陷的调节方法
CN112680784B (zh) * 2019-10-18 2023-12-26 中环领先(徐州)半导体材料有限公司 单晶炉及利用该单晶炉制备晶棒的方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4824519A (en) * 1987-10-22 1989-04-25 Massachusetts Institute Of Technology Method and apparatus for single crystal pulling downwardly from the lower surface of a floating melt
JPH0259489A (ja) * 1988-08-25 1990-02-28 Shin Etsu Handotai Co Ltd 化合物半導体単結晶の製造方法
JP3016897B2 (ja) * 1991-03-20 2000-03-06 信越半導体株式会社 シリコン単結晶の製造方法及び装置
JPH0524979A (ja) * 1991-07-18 1993-02-02 Hitachi Cable Ltd 化合物半導体結晶製造装置
JPH072594A (ja) * 1993-06-15 1995-01-06 Japan Energy Corp 半導体結晶製造装置
JP2822887B2 (ja) * 1994-06-16 1998-11-11 信越半導体株式会社 結晶欠陥の少ないシリコン単結晶の製造方法
JPH0826879A (ja) * 1994-07-11 1996-01-30 Furukawa Electric Co Ltd:The 化合物半導体の単結晶引上装置及び化合物半導体単結晶の製造方法
JP3190207B2 (ja) * 1994-07-19 2001-07-23 東芝電興株式会社 シリコン単結晶引き上げ装置
JP3128795B2 (ja) * 1995-06-09 2001-01-29 信越半導体株式会社 チョクラルスキー法による結晶製造装置および製造方法
JPH0940492A (ja) * 1995-07-27 1997-02-10 Hitachi Cable Ltd 単結晶の製造方法及び製造装置

Also Published As

Publication number Publication date
EP0903427B1 (de) 2003-09-03
JP3533812B2 (ja) 2004-05-31
EP0903427A4 (de) 2000-07-12
US6071337A (en) 2000-06-06
DE69724612T2 (de) 2004-08-05
WO1997030195A1 (fr) 1997-08-21
JPH09221380A (ja) 1997-08-26
KR100421125B1 (ko) 2004-04-17
KR19990082507A (ko) 1999-11-25
EP0903427A1 (de) 1999-03-24

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