DE69605507T2 - Verfahren und Vorrichtung zur Herstellung Einkristallen vom Typ Oxid - Google Patents

Verfahren und Vorrichtung zur Herstellung Einkristallen vom Typ Oxid

Info

Publication number
DE69605507T2
DE69605507T2 DE69605507T DE69605507T DE69605507T2 DE 69605507 T2 DE69605507 T2 DE 69605507T2 DE 69605507 T DE69605507 T DE 69605507T DE 69605507 T DE69605507 T DE 69605507T DE 69605507 T2 DE69605507 T2 DE 69605507T2
Authority
DE
Germany
Prior art keywords
single crystals
oxide type
producing single
producing
oxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69605507T
Other languages
English (en)
Other versions
DE69605507D1 (de
Inventor
Minoru Imaeda
Katsuhiro Imai
Tsuguo Fukuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NGK Insulators Ltd
Original Assignee
NGK Insulators Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NGK Insulators Ltd filed Critical NGK Insulators Ltd
Publication of DE69605507D1 publication Critical patent/DE69605507D1/de
Application granted granted Critical
Publication of DE69605507T2 publication Critical patent/DE69605507T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/08—Downward pulling
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C30B29/30—Niobates; Vanadates; Tantalates
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/91—Downward pulling
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1036—Seed pulling including solid member shaping means other than seed or product [e.g., EDFG die]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1036—Seed pulling including solid member shaping means other than seed or product [e.g., EDFG die]
    • Y10T117/1044—Seed pulling including solid member shaping means other than seed or product [e.g., EDFG die] including means forming a flat shape [e.g., ribbon]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Lasers (AREA)
DE69605507T 1995-08-25 1996-08-23 Verfahren und Vorrichtung zur Herstellung Einkristallen vom Typ Oxid Expired - Lifetime DE69605507T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21751395A JP3734860B2 (ja) 1995-08-25 1995-08-25 酸化物単結晶の製造方法および装置

Publications (2)

Publication Number Publication Date
DE69605507D1 DE69605507D1 (de) 2000-01-13
DE69605507T2 true DE69605507T2 (de) 2000-05-31

Family

ID=16705415

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69605507T Expired - Lifetime DE69605507T2 (de) 1995-08-25 1996-08-23 Verfahren und Vorrichtung zur Herstellung Einkristallen vom Typ Oxid

Country Status (4)

Country Link
US (1) US5919304A (de)
EP (1) EP0763610B1 (de)
JP (1) JP3734860B2 (de)
DE (1) DE69605507T2 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6800137B2 (en) 1995-06-16 2004-10-05 Phoenix Scientific Corporation Binary and ternary crystal purification and growth method and apparatus
US5993540A (en) * 1995-06-16 1999-11-30 Optoscint, Inc. Continuous crystal plate growth process and apparatus
US6402834B1 (en) * 1998-05-29 2002-06-11 Toyo Communication Equipment Co., Ltd. Apparatus and method for manufacturing monocrystals
JP4257717B2 (ja) * 2000-02-14 2009-04-22 日本碍子株式会社 単結晶育成用の原料粉末の製造方法および単結晶の製造方法
US6565654B2 (en) * 2000-07-05 2003-05-20 Ngk Insulators, Ltd. Process and apparatus for producing a planar body of an oxide single crystal
JP4374156B2 (ja) 2000-09-01 2009-12-02 日本碍子株式会社 Ｉｉｉ−ｖ族窒化物膜の製造装置及び製造方法
BRPI0409603A (pt) * 2003-04-23 2006-04-18 Stella Chemifa Corp equipamento para a produção de cristais de compostos fluorados, cadinho e método de produção de monocristais de compostos fluorados
DE102006017621B4 (de) * 2006-04-12 2008-12-24 Schott Ag Vorrichtung und Verfahren zur Herstellung von multikristallinem Silizium
US8790460B2 (en) * 2009-05-18 2014-07-29 Empire Technology Development Llc Formation of silicon sheets by impinging fluid
JP2012166979A (ja) * 2011-02-14 2012-09-06 Sumco Corp 多結晶シリコンの電磁鋳造方法および電磁鋳造装置

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5690734A (en) * 1995-03-22 1997-11-25 Ngk Insulators, Ltd. Single crystal growing method

Also Published As

Publication number Publication date
EP0763610A2 (de) 1997-03-19
US5919304A (en) 1999-07-06
DE69605507D1 (de) 2000-01-13
EP0763610B1 (de) 1999-12-08
JPH0967189A (ja) 1997-03-11
JP3734860B2 (ja) 2006-01-11
EP0763610A3 (de) 1997-06-11

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