DE69527583T2 - Verfahren und Vorrichtung zur Herstellung einkristalliner Oxydfilmen - Google Patents

Verfahren und Vorrichtung zur Herstellung einkristalliner Oxydfilmen

Info

Publication number
DE69527583T2
DE69527583T2 DE69527583T DE69527583T DE69527583T2 DE 69527583 T2 DE69527583 T2 DE 69527583T2 DE 69527583 T DE69527583 T DE 69527583T DE 69527583 T DE69527583 T DE 69527583T DE 69527583 T2 DE69527583 T2 DE 69527583T2
Authority
DE
Germany
Prior art keywords
oxide films
crystalline oxide
producing single
producing
crystalline
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69527583T
Other languages
English (en)
Other versions
DE69527583D1 (de
Inventor
Nobuyuki Kokune
Kazuaki Yamaguchi
Shoji Sogo
Ryuichi Ohuchi
Tatsuo Kawaguchi
Minoru Imaeda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NGK Insulators Ltd
Original Assignee
NGK Insulators Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NGK Insulators Ltd filed Critical NGK Insulators Ltd
Application granted granted Critical
Publication of DE69527583D1 publication Critical patent/DE69527583D1/de
Publication of DE69527583T2 publication Critical patent/DE69527583T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/02—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C30B29/30—Niobates; Vanadates; Tantalates

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
DE69527583T 1994-05-31 1995-05-26 Verfahren und Vorrichtung zur Herstellung einkristalliner Oxydfilmen Expired - Fee Related DE69527583T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6118093A JP2915787B2 (ja) 1994-05-31 1994-05-31 酸化物単結晶膜の製造方法及びその装置

Publications (2)

Publication Number Publication Date
DE69527583D1 DE69527583D1 (de) 2002-09-05
DE69527583T2 true DE69527583T2 (de) 2003-04-03

Family

ID=14727831

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69527583T Expired - Fee Related DE69527583T2 (de) 1994-05-31 1995-05-26 Verfahren und Vorrichtung zur Herstellung einkristalliner Oxydfilmen

Country Status (4)

Country Link
US (1) US5603762A (de)
EP (1) EP0690152B1 (de)
JP (1) JP2915787B2 (de)
DE (1) DE69527583T2 (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW344100B (en) * 1996-05-31 1998-11-01 Toshiba Co Ltd Semiconductor liquid phase epitaxial growth method and apparatus
JP2002187791A (ja) 2000-12-15 2002-07-05 Canon Inc 液相成長方法および液相成長装置
JP2004002135A (ja) 2001-08-28 2004-01-08 Canon Inc 液相成長方法及び液相成長装置
EP1997941B1 (de) * 2006-03-01 2014-12-17 Mitsubishi Gas Chemical Company, Inc. Verfahren zur herstellung von zno-einkristall nach der methode des flüssigphasenwachstums
JP6409708B2 (ja) * 2015-07-28 2018-10-24 住友金属鉱山株式会社 ビスマス置換型希土類鉄ガーネット結晶膜の製造方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3647578A (en) * 1970-04-30 1972-03-07 Gen Electric Selective uniform liquid phase epitaxial growth
DE2413325A1 (de) * 1974-03-20 1975-10-16 Philips Patentverwaltung Verfahren und vorrichtung zur herstellung von granatschichten durch epitaxie aus schmelzfluessigen loesungen
US4092208A (en) * 1974-11-27 1978-05-30 U.S. Philips Corporation Method of growing single crystals of rare earth metal iron garnet materials
US3994755A (en) * 1974-12-06 1976-11-30 Hughes Aircraft Company Liquid phase epitaxial process for growing semi-insulating GaAs layers
US4283247A (en) * 1979-06-21 1981-08-11 Texas Instruments Incorporated Liquid phase epitaxial process for magnetic garnet
JPS57206012A (en) * 1981-06-12 1982-12-17 Kokusai Electric Co Ltd Vertical type liquid epitaxial growing device
JPS59181012A (ja) * 1983-03-30 1984-10-15 Fujitsu Ltd 液相エピタキシヤル成長法
JPS6131385A (ja) * 1984-07-23 1986-02-13 Showa Denko Kk 液相エピタキシヤル成長方法
JPH0288430A (ja) * 1988-09-26 1990-03-28 Tokin Corp 磁気光学ガーネット
JPH02259608A (ja) * 1989-03-31 1990-10-22 Ibiden Co Ltd ニオブ酸リチウム光導波路の製造方法
JPH05117096A (ja) * 1991-10-30 1993-05-14 Tokin Corp ニオブ酸リチウム単結晶の薄膜の育成方法
JPH0656573A (ja) * 1992-08-05 1994-03-01 Murata Mfg Co Ltd 液相エピタキシャル成長装置
JPH06117490A (ja) * 1992-10-01 1994-04-26 Kubota Corp 作業車における主クラッチ構造

Also Published As

Publication number Publication date
EP0690152A2 (de) 1996-01-03
EP0690152B1 (de) 2002-07-31
JPH07315983A (ja) 1995-12-05
JP2915787B2 (ja) 1999-07-05
EP0690152A3 (de) 1997-03-05
US5603762A (en) 1997-02-18
DE69527583D1 (de) 2002-09-05

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee