DE69531367T2 - Coulomb-Blockade-Element und Verfahren zur Herstellung - Google Patents

Coulomb-Blockade-Element und Verfahren zur Herstellung Download PDF

Info

Publication number
DE69531367T2
DE69531367T2 DE69531367T DE69531367T DE69531367T2 DE 69531367 T2 DE69531367 T2 DE 69531367T2 DE 69531367 T DE69531367 T DE 69531367T DE 69531367 T DE69531367 T DE 69531367T DE 69531367 T2 DE69531367 T2 DE 69531367T2
Authority
DE
Germany
Prior art keywords
narrow wire
electrode
section
silicon
silicon layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69531367T
Other languages
German (de)
English (en)
Other versions
DE69531367D1 (de
Inventor
Yasuo Yokohama-shi Takahashi
Masao Isehara-shi Nagase
Akira Isehara-shi Fujiwara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Publication of DE69531367D1 publication Critical patent/DE69531367D1/de
Application granted granted Critical
Publication of DE69531367T2 publication Critical patent/DE69531367T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/014—Manufacture or treatment of FETs having zero-dimensional [0D] or one-dimensional [1D] channels, e.g. quantum wire FETs, single-electron transistors [SET] or Coulomb blockade transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/402—Single electron transistors; Coulomb blockade transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/902—Specified use of nanostructure
    • Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
    • Y10S977/936—Specified use of nanostructure for electronic or optoelectronic application in a transistor or 3-terminal device
    • Y10S977/937—Single electron transistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Semiconductor Memories (AREA)
  • Photovoltaic Devices (AREA)
DE69531367T 1994-10-27 1995-10-24 Coulomb-Blockade-Element und Verfahren zur Herstellung Expired - Lifetime DE69531367T2 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP26380994 1994-10-27
JP26380994 1994-10-27
JP22887295 1995-09-06
JP22887295 1995-09-06

Publications (2)

Publication Number Publication Date
DE69531367D1 DE69531367D1 (de) 2003-08-28
DE69531367T2 true DE69531367T2 (de) 2004-04-15

Family

ID=26528504

Family Applications (2)

Application Number Title Priority Date Filing Date
DE69531367T Expired - Lifetime DE69531367T2 (de) 1994-10-27 1995-10-24 Coulomb-Blockade-Element und Verfahren zur Herstellung
DE69518821T Expired - Lifetime DE69518821T2 (de) 1994-10-27 1995-10-24 Coulomb-Blockade-Element und Verfahren zur Herstellung

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE69518821T Expired - Lifetime DE69518821T2 (de) 1994-10-27 1995-10-24 Coulomb-Blockade-Element und Verfahren zur Herstellung

Country Status (3)

Country Link
US (2) US5604154A (enExample)
EP (2) EP0718894B1 (enExample)
DE (2) DE69531367T2 (enExample)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5754077A (en) * 1995-03-16 1998-05-19 Kabushiki Kaisha Toshiba Semiconductor integrated circuit having plural functional blocks, wherein one of the blocks comprises a small tunnel junction device and another block comprises a FET
US5838021A (en) * 1995-12-26 1998-11-17 Ancona; Mario G. Single electron digital circuits
JPH09312378A (ja) * 1996-03-19 1997-12-02 Fujitsu Ltd 半導体装置及びその製造方法
US5897366A (en) * 1997-03-10 1999-04-27 Motorola, Inc. Method of resistless gate metal etch for fets
US5945686A (en) * 1997-04-28 1999-08-31 Hitachi, Ltd. Tunneling electronic device
US6198113B1 (en) 1999-04-22 2001-03-06 Acorn Technologies, Inc. Electrostatically operated tunneling transistor
KR100340929B1 (ko) * 1999-11-25 2002-06-20 오길록 금속 초박막을 이용한 단전자 트랜지스터
US7615402B1 (en) 2000-07-07 2009-11-10 Acorn Technologies, Inc. Electrostatically operated tunneling transistor
EP1229590A1 (en) * 2001-01-31 2002-08-07 Japan Science and Technology Corporation Correlated charge transfer device and a method of fabricating a correlated charge transfer device
FR2830686B1 (fr) * 2001-10-04 2004-10-22 Commissariat Energie Atomique Transistor a un electron et a canal vertical, et procedes de realisation d'un tel transistor
US20050161659A1 (en) * 2002-03-28 2005-07-28 Yanmar Agricultural Equiptment Co. Nanowire and electronic device
TWI227516B (en) * 2003-12-26 2005-02-01 Ind Tech Res Inst Nano-electronic devices using discrete exposure method
JP4249684B2 (ja) * 2004-10-06 2009-04-02 株式会社東芝 半導体記憶装置
CN100409454C (zh) * 2005-10-20 2008-08-06 中国科学院半导体研究所 通过注氧进行量子限制的硅基单电子晶体管
KR20100072610A (ko) * 2008-12-22 2010-07-01 한국전자통신연구원 반도체 장치 및 그 제조 방법
JP5604862B2 (ja) * 2009-01-09 2014-10-15 ソニー株式会社 流路デバイス、複素誘電率測定装置及び誘電サイトメトリー装置
EP3520143A4 (en) * 2016-09-30 2020-06-17 INTEL Corporation SINGLE ELECTRON TRANSISTORS (SET) AND SET-BASED QUUBIT DETECTOR ARRANGEMENTS
FR3057105A1 (fr) 2016-10-05 2018-04-06 Commissariat A L'energie Atomique Et Aux Energies Alternatives Dispositif a boite(s) quantique(s) comportant des dopants localises dans une couche semi-conductrice mince

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5401980A (en) * 1991-09-04 1995-03-28 International Business Machines Corporation 2D/1D junction device as a Coulomb blockade gate
JPH0590567A (ja) * 1991-09-25 1993-04-09 Hitachi Ltd 一電子トンネルトランジスタ回路およびその製造方法
JP3156307B2 (ja) * 1991-10-15 2001-04-16 株式会社日立製作所 一電子トンネルトランジスタ及びその集積回路
GB9226382D0 (en) * 1992-12-18 1993-02-10 Hitachi Europ Ltd Memory device

Also Published As

Publication number Publication date
US5665979A (en) 1997-09-09
EP1028472A2 (en) 2000-08-16
US5604154A (en) 1997-02-18
DE69518821T2 (de) 2001-04-26
EP1028472A3 (en) 2000-08-30
DE69518821D1 (de) 2000-10-19
DE69531367D1 (de) 2003-08-28
EP0718894A2 (en) 1996-06-26
EP0718894B1 (en) 2000-09-13
EP0718894A3 (enExample) 1996-07-31
EP1028472B1 (en) 2003-07-23

Similar Documents

Publication Publication Date Title
DE69531367T2 (de) Coulomb-Blockade-Element und Verfahren zur Herstellung
DE10353387B4 (de) Verfahren zur Herstellung einer Leistungstransistoranordnung und Leistungstransistoranordnung
DE69226405T2 (de) Geschichtete CMOS SRAM Zelle mit polysilizium-Lasttransistoren
DE10239815B4 (de) Insulated-Gate-Halbleiterbauelement und Verfahren zur Herstellung von diesem
DE3816667C2 (de) Gate-gesteuertes monolithisch integriertes Halbleiterelement mit bidirektionaler Leitfähigkeit und Verfahren zu dessen Betrieb
DE19611438B4 (de) Flash-EEPROM-Speicherzelle mit zwei Floatinggate-Elektroden und Verfahren zu deren Herstellung
DE69133300T2 (de) Feldeffektanordnung mit einem Kanal aus polykristallinem Silizium
DE19901386A1 (de) Busarchitektur eines feldgekoppelten Leistungs-MOSFET unter Verwendung der Graben-Technologie
DE2201150B2 (enExample)
DE4037876A1 (de) Laterale dmos-fet-vorrichtung mit reduziertem betriebswiderstand
DE10250830A1 (de) Feldeffekttransistor-Anordnung und Schaltkreis-Array
DE2502235A1 (de) Ladungskopplungs-halbleiteranordnung
DE102007037888A1 (de) Speicherzellen-Array mit Tunnel-FET als Zugriffstransistor
DE19533709A1 (de) Nicht-flüchtige Halbleiterspeichervorrichtung und Herstellungsverfahren derselben
DE3400295A1 (de) Halbleiterbauteil
DE69418357T2 (de) SRAM-Speicherstruktur und ein zugehöriges Herstellungsverfahren
DE69332966T2 (de) Halbleiterspeicherbauelement
DE4207569A1 (de) Steuerbarer thyristor mit isoliertem gate und verfahren zu seiner herstellung
DE4409863C1 (de) Verfahren zur Herstellung eines Einzelelektronen-Bauelementes
DE102004063590B4 (de) Verfahren zum Bilden eines Siliziumquantenpunktes und Verfahren zum Fertigen einer Halbleiterspeichervorrichtung, die denselben verwendet
DE69231030T2 (de) Entwurf statischer Speicherzellen
DE3923619C2 (enExample)
DE3687780T2 (de) Ausgerichtete verbindungen zwischen logischen stufen.
DE69231233T2 (de) Halbleiterspeicheranordnung mit einem Dünnschichttransistor und Herstellungsmethode für selben
EP1142019B1 (de) Schaltungsanordnung mit mindestens einem nanoelektronischen bauelement und verfahren zu deren herstellung

Legal Events

Date Code Title Description
8364 No opposition during term of opposition