DE69518612T2 - Zinkphosphat-Beschichtung für Varistor und Verfahren zu ihrer Herstellung - Google Patents
Zinkphosphat-Beschichtung für Varistor und Verfahren zu ihrer HerstellungInfo
- Publication number
- DE69518612T2 DE69518612T2 DE69518612T DE69518612T DE69518612T2 DE 69518612 T2 DE69518612 T2 DE 69518612T2 DE 69518612 T DE69518612 T DE 69518612T DE 69518612 T DE69518612 T DE 69518612T DE 69518612 T2 DE69518612 T2 DE 69518612T2
- Authority
- DE
- Germany
- Prior art keywords
- oxide
- electrically conductive
- phosphoric acid
- zinc
- zinc phosphate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000000034 method Methods 0.000 title claims description 23
- LRXTYHSAJDENHV-UHFFFAOYSA-H zinc phosphate Chemical compound [Zn+2].[Zn+2].[Zn+2].[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O LRXTYHSAJDENHV-UHFFFAOYSA-H 0.000 title claims description 15
- 229910000165 zinc phosphate Inorganic materials 0.000 title claims description 15
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 239000011248 coating agent Substances 0.000 title claims description 7
- 238000000576 coating method Methods 0.000 title claims description 7
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 28
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 24
- 238000007747 plating Methods 0.000 claims description 22
- 229910052751 metal Inorganic materials 0.000 claims description 17
- 239000002184 metal Substances 0.000 claims description 17
- 239000004065 semiconductor Substances 0.000 claims description 17
- 235000011007 phosphoric acid Nutrition 0.000 claims description 14
- 239000011787 zinc oxide Substances 0.000 claims description 12
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 11
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 6
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 claims description 4
- 229910019142 PO4 Inorganic materials 0.000 claims description 4
- 239000000654 additive Substances 0.000 claims description 4
- AMWRITDGCCNYAT-UHFFFAOYSA-L hydroxy(oxo)manganese;manganese Chemical compound [Mn].O[Mn]=O.O[Mn]=O AMWRITDGCCNYAT-UHFFFAOYSA-L 0.000 claims description 4
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 claims description 4
- 239000010452 phosphate Substances 0.000 claims description 4
- IHWJXGQYRBHUIF-UHFFFAOYSA-N [Ag].[Pt] Chemical compound [Ag].[Pt] IHWJXGQYRBHUIF-UHFFFAOYSA-N 0.000 claims description 3
- 239000008367 deionised water Substances 0.000 claims description 3
- 229910021641 deionized water Inorganic materials 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- BNGXYYYYKUGPPF-UHFFFAOYSA-M (3-methylphenyl)methyl-triphenylphosphanium;chloride Chemical compound [Cl-].CC1=CC=CC(C[P+](C=2C=CC=CC=2)(C=2C=CC=CC=2)C=2C=CC=CC=2)=C1 BNGXYYYYKUGPPF-UHFFFAOYSA-M 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 2
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 claims description 2
- 229910000410 antimony oxide Inorganic materials 0.000 claims description 2
- 229910000416 bismuth oxide Inorganic materials 0.000 claims description 2
- 229910052810 boron oxide Inorganic materials 0.000 claims description 2
- 229910000423 chromium oxide Inorganic materials 0.000 claims description 2
- 229910000428 cobalt oxide Inorganic materials 0.000 claims description 2
- IVMYJDGYRUAWML-UHFFFAOYSA-N cobalt(ii) oxide Chemical compound [Co]=O IVMYJDGYRUAWML-UHFFFAOYSA-N 0.000 claims description 2
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 claims description 2
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 claims description 2
- LQBJWKCYZGMFEV-UHFFFAOYSA-N lead tin Chemical compound [Sn].[Pb] LQBJWKCYZGMFEV-UHFFFAOYSA-N 0.000 claims description 2
- 229910000480 nickel oxide Inorganic materials 0.000 claims description 2
- VTRUBDSFZJNXHI-UHFFFAOYSA-N oxoantimony Chemical compound [Sb]=O VTRUBDSFZJNXHI-UHFFFAOYSA-N 0.000 claims description 2
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 claims description 2
- SWELZOZIOHGSPA-UHFFFAOYSA-N palladium silver Chemical compound [Pd].[Ag] SWELZOZIOHGSPA-UHFFFAOYSA-N 0.000 claims description 2
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 2
- 230000000996 additive effect Effects 0.000 claims 1
- 238000009713 electroplating Methods 0.000 claims 1
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- 238000010285 flame spraying Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000007654 immersion Methods 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 235000003930 Aegle marmelos Nutrition 0.000 description 1
- 244000058084 Aegle marmelos Species 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- -1 tin-lead metals Chemical class 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
- 229910000859 α-Fe Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/18—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material comprising a plurality of layers stacked between terminals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C1/00—Details
- H01C1/02—Housing; Enclosing; Embedding; Filling the housing or enclosure
- H01C1/034—Housing; Enclosing; Embedding; Filling the housing or enclosure the housing or enclosure being formed as coating or mould without outer sheath
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/10—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
- H01C7/102—Varistor boundary, e.g. surface layers
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Thermistors And Varistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/355,220 US5614074A (en) | 1994-12-09 | 1994-12-09 | Zinc phosphate coating for varistor and method |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69518612D1 DE69518612D1 (de) | 2000-10-05 |
DE69518612T2 true DE69518612T2 (de) | 2001-05-03 |
Family
ID=23396675
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69518612T Expired - Lifetime DE69518612T2 (de) | 1994-12-09 | 1995-12-08 | Zinkphosphat-Beschichtung für Varistor und Verfahren zu ihrer Herstellung |
Country Status (4)
Country | Link |
---|---|
US (2) | US5614074A (fr) |
EP (1) | EP0716429B1 (fr) |
JP (1) | JP3634033B2 (fr) |
DE (1) | DE69518612T2 (fr) |
Families Citing this family (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5750264A (en) * | 1994-10-19 | 1998-05-12 | Matsushita Electric Industrial Co., Inc. | Electronic component and method for fabricating the same |
JPH09205005A (ja) | 1996-01-24 | 1997-08-05 | Matsushita Electric Ind Co Ltd | 電子部品とその製造方法 |
ATE195198T1 (de) * | 1996-05-09 | 2000-08-15 | Littlefuse Inc | Zink-phosphatbeschichtung für varistor und verfahren zur herstellung |
DE19634498C2 (de) * | 1996-08-26 | 1999-01-28 | Siemens Matsushita Components | Elektro-keramisches Bauelement und Verfahren zu seiner Herstellung |
TW394961B (en) * | 1997-03-20 | 2000-06-21 | Ceratech Corp | Low capacitance chip varistor and fabrication method thereof |
GB2326976A (en) * | 1997-06-30 | 1999-01-06 | Harris Corp | Varistor nickel barrier electrode |
JPH11191506A (ja) * | 1997-12-25 | 1999-07-13 | Murata Mfg Co Ltd | 積層型バリスタ |
US6214685B1 (en) * | 1998-07-02 | 2001-04-10 | Littelfuse, Inc. | Phosphate coating for varistor and method |
US20020125982A1 (en) * | 1998-07-28 | 2002-09-12 | Robert Swensen | Surface mount electrical device with multiple ptc elements |
JP2000091105A (ja) * | 1998-09-11 | 2000-03-31 | Murata Mfg Co Ltd | チップ型セラミックサーミスタおよびその製造方法 |
US6704997B1 (en) * | 1998-11-30 | 2004-03-16 | Murata Manufacturing Co., Ltd. | Method of producing organic thermistor devices |
JP2001110666A (ja) * | 1999-10-08 | 2001-04-20 | Murata Mfg Co Ltd | 電子部品、および電子部品の製造方法 |
US6535105B2 (en) * | 2000-03-30 | 2003-03-18 | Avx Corporation | Electronic device and process of making electronic device |
US6841191B2 (en) * | 2002-02-08 | 2005-01-11 | Thinking Electronic Industrial Co., Ltd. | Varistor and fabricating method of zinc phosphate insulation for the same |
KR100444888B1 (ko) * | 2002-02-18 | 2004-08-21 | 주식회사 쎄라텍 | 칩타입 바리스터 및 그 제조방법 |
EP1858033A4 (fr) * | 2005-04-01 | 2013-10-09 | Panasonic Corp | Varistance et module de composant électronique l'utilisant |
CN101331562B (zh) * | 2005-10-19 | 2011-06-01 | 东莞令特电子有限公司 | 变阻器及制造方法 |
CN101506912B (zh) * | 2006-09-19 | 2011-10-12 | 东莞令特电子有限公司 | 包括钝化层的变阻器的制造 |
CN101350238B (zh) * | 2007-07-16 | 2010-12-08 | 深圳振华富电子有限公司 | 一种叠层片式电子元件的表面处理方法 |
JP2009200168A (ja) * | 2008-02-20 | 2009-09-03 | Tdk Corp | セラミック電子部品、セラミック電子部品の製造方法、及びセラミック電子部品の梱包方法 |
JP5211801B2 (ja) * | 2008-03-28 | 2013-06-12 | Tdk株式会社 | 電子部品 |
US8195118B2 (en) * | 2008-07-15 | 2012-06-05 | Linear Signal, Inc. | Apparatus, system, and method for integrated phase shifting and amplitude control of phased array signals |
US8872719B2 (en) * | 2009-11-09 | 2014-10-28 | Linear Signal, Inc. | Apparatus, system, and method for integrated modular phased array tile configuration |
US20150010707A1 (en) * | 2013-07-02 | 2015-01-08 | Jian- Liang LIN | Method for Marking a Tool |
JP6274044B2 (ja) * | 2014-07-28 | 2018-02-07 | 株式会社村田製作所 | セラミック電子部品 |
JP6339474B2 (ja) * | 2014-10-03 | 2018-06-06 | アルプス電気株式会社 | インダクタンス素子および電子機器 |
DE112019003625T5 (de) | 2018-07-18 | 2021-04-22 | Avx Corporation | Varistor-Passivierungsschicht und Verfahren zu ihrer Herstellung |
CN112837877B (zh) * | 2020-12-24 | 2022-06-17 | 南阳金铭电子科技有限公司 | 片式无源元器件表面封包处理工艺 |
DE102022114552A1 (de) | 2022-06-09 | 2023-12-14 | Tdk Electronics Ag | Verfahren zur Herstellung eines Vielschicht-Varistors |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4046847A (en) * | 1975-12-22 | 1977-09-06 | General Electric Company | Process for improving the stability of sintered zinc oxide varistors |
FR2402401A1 (fr) * | 1977-09-09 | 1979-04-06 | Billington Edward Ltd | Milieu de croissance pour plantes |
DE3050770C2 (de) * | 1979-02-09 | 1987-03-19 | TDK Corporation, Tokio/Tokyo | Verfahren zur Herstellung eines Varistors |
JPS5816602B2 (ja) | 1979-02-09 | 1983-04-01 | ティーディーケイ株式会社 | 電圧非直線性抵抗素子 |
US4371860A (en) * | 1979-06-18 | 1983-02-01 | General Electric Company | Solderable varistor |
CA1186130A (fr) * | 1981-06-16 | 1985-04-30 | Jeffery L. Barrall | Materiaux rigides et impermeables a base de ceramique de phosphate, et methode de production desdits materiaux |
JPH0770380B2 (ja) * | 1988-04-11 | 1995-07-31 | ローム株式会社 | 電子部品のニッケルメッキ方法 |
DE3930000A1 (de) * | 1988-09-08 | 1990-03-15 | Murata Manufacturing Co | Varistor in schichtbauweise |
JPH02189903A (ja) * | 1989-01-18 | 1990-07-25 | Murata Mfg Co Ltd | 積層型バリスタ |
JPH03131004A (ja) * | 1989-10-17 | 1991-06-04 | Toshiba Corp | 非直線抵抗体の製造方法 |
JPH03173402A (ja) * | 1989-12-02 | 1991-07-26 | Murata Mfg Co Ltd | チップバリスタ |
GB2242066B (en) | 1990-03-16 | 1994-04-27 | Ecco Ltd | Varistor structures |
JP2815990B2 (ja) * | 1990-07-26 | 1998-10-27 | 株式会社東芝 | 非直線抵抗体の製造方法 |
US5307046A (en) * | 1991-05-22 | 1994-04-26 | Hubbell Incorporated | Passivating coating for metal oxide varistors |
JPH05136012A (ja) * | 1991-11-15 | 1993-06-01 | Rohm Co Ltd | チツプタイプ電子部品の製造方法 |
ATE195198T1 (de) * | 1996-05-09 | 2000-08-15 | Littlefuse Inc | Zink-phosphatbeschichtung für varistor und verfahren zur herstellung |
-
1994
- 1994-12-09 US US08/355,220 patent/US5614074A/en not_active Expired - Lifetime
-
1995
- 1995-12-07 JP JP31901195A patent/JP3634033B2/ja not_active Expired - Fee Related
- 1995-12-08 DE DE69518612T patent/DE69518612T2/de not_active Expired - Lifetime
- 1995-12-08 EP EP95402769A patent/EP0716429B1/fr not_active Expired - Lifetime
-
1997
- 1997-01-22 US US08/786,307 patent/US5757263A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0716429A3 (fr) | 1997-01-22 |
DE69518612D1 (de) | 2000-10-05 |
US5614074A (en) | 1997-03-25 |
EP0716429B1 (fr) | 2000-08-30 |
JPH08227802A (ja) | 1996-09-03 |
EP0716429A2 (fr) | 1996-06-12 |
US5757263A (en) | 1998-05-26 |
JP3634033B2 (ja) | 2005-03-30 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8328 | Change in the person/name/address of the agent |
Representative=s name: HANSMANN & VOGESER, 81369 MUENCHEN |