DE69431570T2 - Positivarbeitende resistzusammensetzung - Google Patents

Positivarbeitende resistzusammensetzung

Info

Publication number
DE69431570T2
DE69431570T2 DE69431570T DE69431570T DE69431570T2 DE 69431570 T2 DE69431570 T2 DE 69431570T2 DE 69431570 T DE69431570 T DE 69431570T DE 69431570 T DE69431570 T DE 69431570T DE 69431570 T2 DE69431570 T2 DE 69431570T2
Authority
DE
Germany
Prior art keywords
resist composition
positive working
working resist
positive
composition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69431570T
Other languages
English (en)
Other versions
DE69431570D1 (de
Inventor
Shoji Kawata
Motofumi Kashiwagi
Teturyo Kusunoki
Masahiro Nakamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Zeon Corp
Original Assignee
Nippon Zeon Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Zeon Co Ltd filed Critical Nippon Zeon Co Ltd
Application granted granted Critical
Publication of DE69431570D1 publication Critical patent/DE69431570D1/de
Publication of DE69431570T2 publication Critical patent/DE69431570T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/0226—Quinonediazides characterised by the non-macromolecular additives
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
DE69431570T 1994-12-28 1994-12-28 Positivarbeitende resistzusammensetzung Expired - Fee Related DE69431570T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP1994/002301 WO1996020430A1 (fr) 1994-12-28 1994-12-28 Composition de resist positif

Publications (2)

Publication Number Publication Date
DE69431570D1 DE69431570D1 (de) 2002-11-21
DE69431570T2 true DE69431570T2 (de) 2003-06-12

Family

ID=14098945

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69431570T Expired - Fee Related DE69431570T2 (de) 1994-12-28 1994-12-28 Positivarbeitende resistzusammensetzung

Country Status (5)

Country Link
US (1) US5912102A (de)
EP (1) EP0801327B1 (de)
KR (1) KR100334484B1 (de)
DE (1) DE69431570T2 (de)
WO (1) WO1996020430A1 (de)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5866724A (en) * 1995-10-18 1999-02-02 Sumitomo Chemical Company, Limited Positive resist composition and photosensitizers
JP3473931B2 (ja) * 1996-11-11 2003-12-08 東京応化工業株式会社 リフトオフ用ポジ型感光性組成物およびパターン形成方法
KR100560021B1 (ko) * 1996-12-11 2006-05-25 제이에스알 가부시끼가이샤 감방사선성수지조성물
US6177226B1 (en) 1997-05-01 2001-01-23 Tokyo Ohka Kogyo Co., Ltd. Positive photoresist composition and process for forming contact hole
JP3600713B2 (ja) * 1997-08-06 2004-12-15 東京応化工業株式会社 ポジ型ホトレジスト組成物
US6051358A (en) * 1997-11-04 2000-04-18 Shipley Company, L.L.C. Photoresist with novel photoactive compound
JP3369471B2 (ja) * 1998-05-29 2003-01-20 東京応化工業株式会社 ポジ型ホトレジスト組成物およびレジストパターンの形成方法
JP3688469B2 (ja) * 1998-06-04 2005-08-31 東京応化工業株式会社 ポジ型ホトレジスト組成物およびこれを用いたレジストパターンの形成方法
KR100323831B1 (ko) * 1999-03-30 2002-02-07 윤종용 포토레지스트 조성물, 이의 제조 방법 및 이를 사용한 패턴의 형성방법
JP2001033957A (ja) * 1999-07-19 2001-02-09 Tokyo Ohka Kogyo Co Ltd ポジ型ホトレジスト組成物
JP3901923B2 (ja) * 2000-09-12 2007-04-04 東京応化工業株式会社 ポジ型ホトレジスト組成物
US6964838B2 (en) * 2001-01-17 2005-11-15 Tokyo Ohka Kogyo Co., Ltd. Positive photoresist composition
DE10135790B4 (de) * 2001-07-23 2005-07-14 Kennametal Inc. Feinkörniges Sinterhartmetall und seine Verwendung
JP3708049B2 (ja) * 2001-12-26 2005-10-19 東京応化工業株式会社 ポジ型ホトレジスト組成物
JP2003195495A (ja) * 2001-12-26 2003-07-09 Tokyo Ohka Kogyo Co Ltd ポジ型ホトレジスト組成物
JP4440600B2 (ja) * 2003-10-31 2010-03-24 Ａｚエレクトロニックマテリアルズ株式会社 厚膜および超厚膜対応化学増幅型感光性樹脂組成物
KR100596364B1 (ko) * 2004-05-31 2006-07-03 주식회사 엘지화학 감광성 수지 조성물 및 이를 이용하여 제조된 액정표시소자
KR101240643B1 (ko) * 2005-07-08 2013-03-08 삼성디스플레이 주식회사 포토레지스트 조성물, 상기 포토레지스트 조성물을 이용한 패턴의 형성 방법 및 이를 이용한 박막 트랜지스터표시판의 제조 방법
KR101348607B1 (ko) * 2006-02-14 2014-01-07 주식회사 동진쎄미켐 포토레지스트 조성물 및 이를 이용한 박막 패터닝 방법과 이를 이용한 액정 표시 패널의 제조 방법
KR101200140B1 (ko) * 2009-08-31 2012-11-12 금호석유화학 주식회사 포지티브형 감광성 조성물
KR20110023354A (ko) * 2009-08-31 2011-03-08 금호석유화학 주식회사 포지티브형 감광성 조성물
JP7427885B2 (ja) * 2019-09-05 2024-02-06 Ｕｂｅ株式会社 フォトレジスト用フェノール樹脂組成物及びフォトレジスト組成物

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4377631A (en) * 1981-06-22 1983-03-22 Philip A. Hunt Chemical Corporation Positive novolak photoresist compositions
JPS5817112A (ja) * 1981-06-22 1983-02-01 フイリツプ・エイ・ハント・ケミカル・コ−ポレイシヨン ポジ型ノボラツクホトレジスト組成物及びその調製物
JPS60176034A (ja) * 1984-02-23 1985-09-10 Japan Synthetic Rubber Co Ltd ポジ型感光性樹脂組成物
JPS63184745A (ja) * 1987-01-27 1988-07-30 Sumitomo Chem Co Ltd ポジ型フオトレジスト組成物
JPS63184757A (ja) * 1987-01-28 1988-07-30 Konica Corp 搬送路を開閉するシヤツタを備えた感光材料搬送装置
JPH087433B2 (ja) * 1989-04-19 1996-01-29 日本ゼオン株式会社 ポジ型レジスト組成物
JP2631744B2 (ja) * 1989-05-11 1997-07-16 日本ゼオン株式会社 ポジ型レジスト組成物
JP2741243B2 (ja) * 1989-05-11 1998-04-15 日本ゼオン株式会社 ポジ型レジスト組成物
JPH061377B2 (ja) * 1989-12-28 1994-01-05 日本ゼオン株式会社 ポジ型レジスト組成物
JP2566169B2 (ja) * 1989-12-28 1996-12-25 日本ゼオン株式会社 ポジ型レジスト組成物
JP2566171B2 (ja) * 1989-12-28 1996-12-25 日本ゼオン株式会社 ポジ型レジスト組成物
EP0445819B1 (de) * 1990-03-08 2001-08-22 Fuji Photo Film Co., Ltd. Positiv arbeitende Photolackzusammensetzung
JPH03259149A (ja) * 1990-03-08 1991-11-19 Fuji Photo Film Co Ltd ポジ型フオトレジスト組成物
JP3052330B2 (ja) * 1990-04-17 2000-06-12 ジェイエスアール株式会社 半導体製造用感放射線性樹脂組成物
US5413896A (en) * 1991-01-24 1995-05-09 Japan Synthetic Rubber Co., Ltd. I-ray sensitive positive resist composition
JP3028648B2 (ja) * 1991-07-17 2000-04-04 ジェイエスアール株式会社 ポジ型レジスト組成物およびパターン形成方法
JP3466218B2 (ja) * 1992-06-04 2003-11-10 住友化学工業株式会社 ポジ型レジスト組成物
KR100277365B1 (ko) * 1992-11-11 2001-09-17 고사이 아끼오 포지티브형레제스트조성물
DE69423858T2 (de) * 1993-12-17 2000-07-27 Fuji Photo Film Co Ltd Positiv-arbeitende Fotolackzusammensetzung
US5700620A (en) * 1993-12-24 1997-12-23 Fuji Photo Film Co., Ltd. Radiation ray sensitive resin compostion containing at least two different naphthoquinonediazide sulfonic acid esters and an alkali-soluble low-molecular compound
JP3278306B2 (ja) * 1994-10-31 2002-04-30 富士写真フイルム株式会社 ポジ型フォトレジスト組成物
US5541033A (en) * 1995-02-01 1996-07-30 Ocg Microelectronic Materials, Inc. Selected o-quinonediazide sulfonic acid esters of phenolic compounds and their use in radiation-sensitive compositions

Also Published As

Publication number Publication date
EP0801327B1 (de) 2002-10-16
EP0801327A4 (de) 1998-04-29
US5912102A (en) 1999-06-15
KR100334484B1 (ko) 2002-12-06
EP0801327A1 (de) 1997-10-15
WO1996020430A1 (fr) 1996-07-04
KR987001100A (ko) 1998-04-30
DE69431570D1 (de) 2002-11-21

Similar Documents

Publication Publication Date Title
DE69705980D1 (de) Positiv-arbeitende fotoempfindliche Zusammensetzung
DE69516018T2 (de) Verdickte persäurezusammensetzungen
DE69525883T2 (de) Positiv-photoresistzusammensetzung
DE69526966T2 (de) Hautkräftigende kometische zusammensetzung
DE69807760T2 (de) Positiv-arbeitende Photoresistzusammensetzung
DE69510519D1 (de) Positiv-arbeitende fotoempfindliche Zusammensetzung
DE69431570T2 (de) Positivarbeitende resistzusammensetzung
DE69515163D1 (de) Fotolackzusammensetzungen
DE69714502D1 (de) Positiv-arbeitende lichtempfindliche Zusammensetzung
FI954773A (fi) Antihypertriglyserideeminen koostumus
DE69229332D1 (de) Positiv-arbeitende Resistzusammensetzung
DE69508666D1 (de) Hydraulische Zusammensetzung
DE69712253D1 (de) Positiv-arbeitende fotoempfindliche Zusammensetzung
DE69500131T2 (de) Positive Resistzusammensetzung
DE69503738D1 (de) Fotopolymerisierbare Zusammensetzung
DE69309769D1 (de) Positivarbeitende Resistzusammensetzung
ITMI940362A0 (it) Composizione antitosse
DE69209356T2 (de) Positiv-arbeitende Resistzusammensetzung
DE69513433D1 (de) Positiv arbeitende Photoresistzusammensetzung
DE69130265D1 (de) Positive arbeitende Photolackzusammensetzung
MA23731A1 (fr) Compositions detegentes
NO970747D0 (no) Sammensetninger
DE69416927T2 (de) Positivarbeitende Resistzusammensetzung
DE69223083D1 (de) Positivarbeitende Resistzusammensetzung
DE69213996D1 (de) Positivarbeitende Resistzusammensetzung

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee