DE69422092D1 - Rastersondenmikroskop - Google Patents

Rastersondenmikroskop

Info

Publication number
DE69422092D1
DE69422092D1 DE69422092T DE69422092T DE69422092D1 DE 69422092 D1 DE69422092 D1 DE 69422092D1 DE 69422092 T DE69422092 T DE 69422092T DE 69422092 T DE69422092 T DE 69422092T DE 69422092 D1 DE69422092 D1 DE 69422092D1
Authority
DE
Germany
Prior art keywords
scanning probe
probe microscope
microscope
scanning
probe
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69422092T
Other languages
English (en)
Other versions
DE69422092T2 (de
Inventor
Yoshitsugu Nakagawa
Fusami Soeda
Naohiko Fujino
Isamu Karino
Osamu Wada
Hiroshi Kurokawa
Koichiro Hori
Nobuyoshi C O Mitsubis Hattori
Masahiro Sekine
Masashi Ohmori
Kazuo Kuramoto
Junji Kobayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Application granted granted Critical
Publication of DE69422092D1 publication Critical patent/DE69422092D1/de
Publication of DE69422092T2 publication Critical patent/DE69422092T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
    • G01Q20/00—Monitoring the movement or position of the probe
    • G01Q20/02—Monitoring the movement or position of the probe by optical means
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y35/00—Methods or apparatus for measurement or analysis of nanostructures
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/94—Investigating contamination, e.g. dust
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
    • G01Q30/00—Auxiliary means serving to assist or improve the scanning probe techniques or apparatus, e.g. display or data processing devices
    • G01Q30/04—Display or data processing devices
    • G01Q30/06—Display or data processing devices for error compensation
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
    • G01Q60/00—Particular types of SPM [Scanning Probe Microscopy] or microscopes; Essential components thereof
    • G01Q60/24—AFM [Atomic Force Microscopy] or apparatus therefor, e.g. AFM probes
    • G01Q60/38—Probes, their manufacture, or their related instrumentation, e.g. holders
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/84—Manufacture, treatment, or detection of nanostructure
    • Y10S977/849—Manufacture, treatment, or detection of nanostructure with scanning probe
    • Y10S977/86—Scanning probe structure
    • Y10S977/868—Scanning probe structure with optical means

Landscapes

  • Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • General Health & Medical Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Radiology & Medical Imaging (AREA)
  • Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Immunology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biochemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Pathology (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Signal Processing (AREA)
  • Multimedia (AREA)
  • Length Measuring Devices With Unspecified Measuring Means (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
DE69422092T 1993-06-08 1994-06-07 Rastersondenmikroskop Expired - Fee Related DE69422092T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP13719093 1993-06-08
JP32777493 1993-12-24

Publications (2)

Publication Number Publication Date
DE69422092D1 true DE69422092D1 (de) 2000-01-20
DE69422092T2 DE69422092T2 (de) 2000-06-08

Family

ID=26470600

Family Applications (2)

Application Number Title Priority Date Filing Date
DE69422092T Expired - Fee Related DE69422092T2 (de) 1993-06-08 1994-06-07 Rastersondenmikroskop
DE69433673T Expired - Fee Related DE69433673T2 (de) 1993-06-08 1994-06-07 Verfahren zum Wahrnehmen und Beobachten von leicht unregelmässigen Oberflächenzuständen und Verwendung zur Herstellung von Flüssigkrystallanzeigen

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE69433673T Expired - Fee Related DE69433673T2 (de) 1993-06-08 1994-06-07 Verfahren zum Wahrnehmen und Beobachten von leicht unregelmässigen Oberflächenzuständen und Verwendung zur Herstellung von Flüssigkrystallanzeigen

Country Status (4)

Country Link
US (1) US5517027A (de)
EP (2) EP0633450B1 (de)
KR (2) KR0174570B1 (de)
DE (2) DE69422092T2 (de)

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US5448399A (en) * 1992-03-13 1995-09-05 Park Scientific Instruments Optical system for scanning microscope
US5883710A (en) * 1994-12-08 1999-03-16 Kla-Tencor Corporation Scanning system for inspecting anomalies on surfaces
JPH08152430A (ja) * 1994-11-29 1996-06-11 Seiko Instr Inc 位置合わせ機能付き顕微鏡
US20040057044A1 (en) * 1994-12-08 2004-03-25 Mehrdad Nikoonahad Scanning system for inspecting anamolies on surfaces
US5948972A (en) * 1994-12-22 1999-09-07 Kla-Tencor Corporation Dual stage instrument for scanning a specimen
US6520005B2 (en) 1994-12-22 2003-02-18 Kla-Tencor Corporation System for sensing a sample
JP3130222B2 (ja) 1995-02-14 2001-01-31 三菱電機株式会社 微小異物の分析方法、分析装置およびこれらを用いる半導体素子もしくは液晶表示素子の製法
JP2813147B2 (ja) * 1995-02-14 1998-10-22 三菱電機株式会社 微小異物の分析方法、分析装置およびこれらを用いる半導体素子もしくは液晶表示素子の製法
JP3514555B2 (ja) * 1995-07-06 2004-03-31 株式会社ルネサステクノロジ 異物評価装置および異物評価方法
JPH0961442A (ja) * 1995-08-23 1997-03-07 Mitsubishi Electric Corp 原子間力顕微鏡及びその測定ヘッド
JPH09292349A (ja) * 1996-04-25 1997-11-11 Bridgestone Sports Co Ltd ゴルフボールの外観検査方法及びその装置
WO1997046865A1 (en) * 1996-06-04 1997-12-11 Tencor Instruments Optical scanning system for surface inspection
JP3287227B2 (ja) * 1996-08-08 2002-06-04 三菱電機株式会社 微小異物検出方法及びその検出装置
US5955661A (en) * 1997-01-06 1999-09-21 Kla-Tencor Corporation Optical profilometer combined with stylus probe measurement device
JP3361735B2 (ja) * 1997-12-01 2003-01-07 セイコーインスツルメンツ株式会社 表面分析装置
US6207575B1 (en) 1998-02-20 2001-03-27 Advanced Micro Devices, Inc. Local interconnect etch characterization using AFM
US6147507A (en) * 1998-08-10 2000-11-14 Advanced Micro Devices, Inc. System and method of mapping leakage current and a defect profile of a semiconductor dielectric layer
US6208154B1 (en) 1998-08-10 2001-03-27 Advanced Micro Devices, Inc. Method of determining the doping concentration across a surface of a semiconductor material
US6320403B1 (en) 1998-08-10 2001-11-20 Advanced Micro Devices, Inc. Method of determining the doping concentration and defect profile across a surface of a processed semiconductor material
US6057914A (en) * 1999-04-09 2000-05-02 Advanced Micro Devices, Inc. Method for detecting and identifying a lens aberration by measurement of sidewall angles by atomic force microscopy
US6552337B1 (en) * 1999-11-02 2003-04-22 Samsung Electronics Co., Ltd. Methods and systems for measuring microroughness of a substrate combining particle counter and atomic force microscope measurements
US6498502B2 (en) 2000-01-04 2002-12-24 Texas Instrument Incorporated Apparatus and method for evaluating semiconductor structures and devices
US6322935B1 (en) * 2000-02-28 2001-11-27 Metron Technology Method and apparatus for repairing an alternating phase shift mask
JP2002162360A (ja) * 2000-11-22 2002-06-07 Seiko Epson Corp 液晶パネルの評価方法及び評価装置
US20040257561A1 (en) * 2000-11-24 2004-12-23 Takao Nakagawa Apparatus and method for sampling
US6696362B2 (en) * 2001-02-08 2004-02-24 Applied Materials Inc. Method for using an in situ particle sensor for monitoring particle performance in plasma deposition processes
US6927847B2 (en) * 2001-09-13 2005-08-09 Hitachi High-Technologies Corporation Method and apparatus for inspecting pattern defects
US6986280B2 (en) * 2002-01-22 2006-01-17 Fei Company Integrated measuring instrument
KR100587296B1 (ko) * 2003-03-11 2006-06-08 엘지전자 주식회사 와이어 본딩 방법
JP4699891B2 (ja) * 2005-12-14 2011-06-15 シャープ株式会社 半導体装置及び半導体装置の外観検査方法
KR101344415B1 (ko) * 2006-01-04 2014-01-28 제이피케이 인스트루먼츠 아게 스캐닝 탐침 현미경을 포함하는 측정 시스템 동작 방법 및측정 시스템
US7222431B1 (en) * 2006-02-03 2007-05-29 Gilson, Inc. Alignment correction system and methods of use thereof
JP4307470B2 (ja) * 2006-08-08 2009-08-05 株式会社日立ハイテクノロジーズ 荷電粒子線装置、試料加工方法及び半導体検査装置
US8008641B2 (en) * 2007-08-27 2011-08-30 Acushnet Company Method and apparatus for inspecting objects using multiple images having varying optical properties
US8214916B2 (en) * 2009-01-26 2012-07-03 Nanoink, Inc. Large area, homogeneous array fabrication including leveling with use of bright spots
US8719961B2 (en) 2010-11-24 2014-05-06 Ut-Battelle, Llc Real space mapping of ionic diffusion and electrochemical activity in energy storage and conversion materials
CN102789075B (zh) * 2012-07-26 2015-03-11 北京京东方光电科技有限公司 用于检测液晶面板的点灯治具
CN105403733A (zh) * 2015-12-09 2016-03-16 深圳市金洲精工科技股份有限公司 砂轮检测装置和砂轮检测方法
JP6723633B2 (ja) * 2015-12-10 2020-07-15 株式会社ディスコ 検査装置
WO2017171651A1 (en) * 2016-03-30 2017-10-05 Agency For Science, Technology And Research System and method for imaging a surface defect on an object
JP6867420B2 (ja) * 2019-01-21 2021-04-28 ファナック株式会社 工作機械、管理システムおよび工具劣化検出方法
US12091313B2 (en) 2019-08-26 2024-09-17 The Research Foundation For The State University Of New York Electrodynamically levitated actuator

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US4601577A (en) * 1982-09-21 1986-07-22 Tokyo Shibaura Denki Kabushiki Kaisha Method and apparatus for detecting defects in a pattern
US4871257A (en) * 1982-12-01 1989-10-03 Canon Kabushiki Kaisha Optical apparatus for observing patterned article
US4595289A (en) * 1984-01-25 1986-06-17 At&T Bell Laboratories Inspection system utilizing dark-field illumination
US4666252A (en) * 1984-06-29 1987-05-19 Energy Conversion Devices, Inc. High yield liquid crystal display and method of making same
US5046847A (en) * 1987-10-30 1991-09-10 Hitachi Ltd. Method for detecting foreign matter and device for realizing same
JP2909829B2 (ja) * 1989-07-05 1999-06-23 セイコーインスツルメンツ株式会社 位置合わせ機能付複合走査型トンネル顕微鏡
JPH0687003B2 (ja) * 1990-02-09 1994-11-02 株式会社日立製作所 走査型トンネル顕微鏡付き走査型電子顕微鏡
JPH04337403A (ja) * 1991-05-14 1992-11-25 Olympus Optical Co Ltd 光集積型変位センサー
US5177559A (en) * 1991-05-17 1993-01-05 International Business Machines Corporation Dark field imaging defect inspection system for repetitive pattern integrated circuits
JP2792634B2 (ja) * 1991-06-28 1998-09-03 シャープ株式会社 アクティブマトリクス基板の検査方法
JP2523227Y2 (ja) * 1991-07-30 1997-01-22 株式会社堀場製作所 異物検査装置
JPH0540034A (ja) * 1991-08-08 1993-02-19 Nikon Corp 複合型顕微鏡
GB2262339B (en) * 1991-12-13 1995-09-06 Honda Motor Co Ltd Method of inspecting the surface of a workpiece
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Also Published As

Publication number Publication date
KR0179327B1 (ko) 1999-06-01
EP0928950A2 (de) 1999-07-14
EP0928950A3 (de) 2000-11-02
KR0174570B1 (ko) 1999-03-20
US5517027A (en) 1996-05-14
EP0633450B1 (de) 1999-12-15
DE69422092T2 (de) 2000-06-08
EP0633450A3 (de) 1995-03-15
EP0928950B1 (de) 2004-03-31
DE69433673D1 (de) 2004-05-06
DE69433673T2 (de) 2005-02-17
EP0633450A2 (de) 1995-01-11

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee