DE69421447D1 - Herstellung einer Vorrichtung unter Verwendung von Röntgenstrahlen eines Plasmas zur Erzeugung eines Musters - Google Patents

Herstellung einer Vorrichtung unter Verwendung von Röntgenstrahlen eines Plasmas zur Erzeugung eines Musters

Info

Publication number
DE69421447D1
DE69421447D1 DE69421447T DE69421447T DE69421447D1 DE 69421447 D1 DE69421447 D1 DE 69421447D1 DE 69421447 T DE69421447 T DE 69421447T DE 69421447 T DE69421447 T DE 69421447T DE 69421447 D1 DE69421447 D1 DE 69421447D1
Authority
DE
Germany
Prior art keywords
rays
plasma
manufacture
pattern
generate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69421447T
Other languages
English (en)
Other versions
DE69421447T2 (de
Inventor
Donald Lawrence White
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
AT&T Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by AT&T Corp filed Critical AT&T Corp
Application granted granted Critical
Publication of DE69421447D1 publication Critical patent/DE69421447D1/de
Publication of DE69421447T2 publication Critical patent/DE69421447T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/702—Reflective illumination, i.e. reflective optical elements other than folding mirrors, e.g. extreme ultraviolet [EUV] illumination systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70233—Optical aspects of catoptric systems, i.e. comprising only reflective elements, e.g. extreme ultraviolet [EUV] projection systems
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
    • G21K1/06—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction or reflection, e.g. monochromators

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • General Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Optics & Photonics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • X-Ray Techniques (AREA)
DE69421447T 1993-05-20 1994-05-11 Herstellung einer Vorrichtung unter Verwendung von Röntgenstrahlen eines Plasmas zur Erzeugung eines Musters Expired - Fee Related DE69421447T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/065,331 US5339346A (en) 1993-05-20 1993-05-20 Device fabrication entailing plasma-derived x-ray delineation

Publications (2)

Publication Number Publication Date
DE69421447D1 true DE69421447D1 (de) 1999-12-09
DE69421447T2 DE69421447T2 (de) 2000-07-06

Family

ID=22061967

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69421447T Expired - Fee Related DE69421447T2 (de) 1993-05-20 1994-05-11 Herstellung einer Vorrichtung unter Verwendung von Röntgenstrahlen eines Plasmas zur Erzeugung eines Musters

Country Status (7)

Country Link
US (1) US5339346A (de)
EP (1) EP0626621B1 (de)
JP (1) JP3291393B2 (de)
KR (1) KR100381072B1 (de)
CA (1) CA2121819C (de)
DE (1) DE69421447T2 (de)
HK (1) HK1005836A1 (de)

Families Citing this family (75)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3499592B2 (ja) * 1994-01-31 2004-02-23 株式会社ルネサステクノロジ 投影露光装置及びパターン転写方法
US5521031A (en) * 1994-10-20 1996-05-28 At&T Corp. Pattern delineating apparatus for use in the EUV spectrum
US5510230A (en) * 1994-10-20 1996-04-23 At&T Corp. Device fabrication using DUV/EUV pattern delineation
US5512759A (en) * 1995-06-06 1996-04-30 Sweatt; William C. Condenser for illuminating a ringfield camera with synchrotron emission light
US6108397A (en) * 1997-11-24 2000-08-22 Focused X-Rays, Llc Collimator for x-ray proximity lithography
US5920380A (en) * 1997-12-19 1999-07-06 Sandia Corporation Apparatus and method for generating partially coherent illumination for photolithography
JP4238390B2 (ja) 1998-02-27 2009-03-18 株式会社ニコン 照明装置、該照明装置を備えた露光装置および該露光装置を用いて半導体デバイスを製造する方法
DE19908526A1 (de) 1999-02-26 2000-08-31 Zeiss Carl Fa Beleuchtungssystem mit Feldspiegeln zur Erzielung einer gleichförmigen Scanenergie
US7109497B2 (en) * 1998-05-05 2006-09-19 Carl Zeiss Smt Ag Illumination system particularly for microlithography
US7186983B2 (en) * 1998-05-05 2007-03-06 Carl Zeiss Smt Ag Illumination system particularly for microlithography
DE19935404A1 (de) 1999-07-30 2001-02-01 Zeiss Carl Fa Beleuchtungssystem mit mehreren Lichtquellen
US6858853B2 (en) * 1998-05-05 2005-02-22 Carl Zeiss Smt Ag Illumination system particularly for microlithography
US6947124B2 (en) 1998-05-05 2005-09-20 Carl Zeiss Smt Ag Illumination system particularly for microlithography
US7142285B2 (en) * 1998-05-05 2006-11-28 Carl Zeiss Smt Ag Illumination system particularly for microlithography
US6438199B1 (en) 1998-05-05 2002-08-20 Carl-Zeiss-Stiftung Illumination system particularly for microlithography
DE10100265A1 (de) * 2001-01-08 2002-07-11 Zeiss Carl Beleuchtungssystem mit Rasterelementen unterschiedlicher Größe
US6859515B2 (en) 1998-05-05 2005-02-22 Carl-Zeiss-Stiftung Trading Illumination system, particularly for EUV lithography
EP0955641B1 (de) 1998-05-05 2004-04-28 Carl Zeiss Beleuchtungssystem insbesondere für die EUV-Lithographie
US7329886B2 (en) * 1998-05-05 2008-02-12 Carl Zeiss Smt Ag EUV illumination system having a plurality of light sources for illuminating an optical element
US7126137B2 (en) * 1998-05-05 2006-10-24 Carl Zeiss Smt Ag Illumination system with field mirrors for producing uniform scanning energy
US20050002090A1 (en) * 1998-05-05 2005-01-06 Carl Zeiss Smt Ag EUV illumination system having a folding geometry
DE10053587A1 (de) 2000-10-27 2002-05-02 Zeiss Carl Beleuchtungssystem mit variabler Einstellung der Ausleuchtung
US6859328B2 (en) * 1998-05-05 2005-02-22 Carl Zeiss Semiconductor Illumination system particularly for microlithography
USRE41667E1 (en) * 1998-05-05 2010-09-14 Carl Zeiss Smt Ag Illumination system particularly for microlithography
DE19903807A1 (de) * 1998-05-05 1999-11-11 Zeiss Carl Fa Beleuchtungssystem insbesondere für die EUV-Lithographie
US20070030948A1 (en) * 1998-05-05 2007-02-08 Carl Zeiss Smt Ag Illumination system with field mirrors for producing uniform scanning energy
USRE42065E1 (en) 1998-05-05 2011-01-25 Carl Zeiss Smt Ag Illumination system particularly for microlithography
US7006595B2 (en) * 1998-05-05 2006-02-28 Carl Zeiss Semiconductor Manufacturing Technologies Ag Illumination system particularly for microlithography
US6947120B2 (en) * 1998-05-05 2005-09-20 Carl Zeiss Smt Ag Illumination system particularly for microlithography
US6469827B1 (en) 1998-08-06 2002-10-22 Euv Llc Diffraction spectral filter for use in extreme-UV lithography condenser
US6225027B1 (en) * 1998-08-06 2001-05-01 Euv Llc Extreme-UV lithography system
US6118577A (en) 1998-08-06 2000-09-12 Euv, L.L.C Diffractive element in extreme-UV lithography condenser
US6210865B1 (en) 1998-08-06 2001-04-03 Euv Llc Extreme-UV lithography condenser
JP2000091220A (ja) 1998-09-08 2000-03-31 Nikon Corp 投影露光装置及び投影露光方法
US6307913B1 (en) * 1998-10-27 2001-10-23 Jmar Research, Inc. Shaped source of soft x-ray, extreme ultraviolet and ultraviolet radiation
US6186632B1 (en) 1998-12-31 2001-02-13 The Regents Of The University Of California Condenser for ring-field deep-ultraviolet and extreme-ultraviolet lithography
US6573978B1 (en) 1999-01-26 2003-06-03 Mcguire, Jr. James P. EUV condenser with non-imaging optics
US6195201B1 (en) 1999-01-27 2001-02-27 Svg Lithography Systems, Inc. Reflective fly's eye condenser for EUV lithography
US7248667B2 (en) * 1999-05-04 2007-07-24 Carl Zeiss Smt Ag Illumination system with a grating element
DE19921597C1 (de) 1999-05-07 2000-07-27 Maier Zerkleinerungsanlage Gmb Messerring-Zerspaner zum Zerspanen von Hackschnitzeln
DE19931848A1 (de) 1999-07-09 2001-01-11 Zeiss Carl Fa Astigmatische Komponenten zur Reduzierung des Wabenaspektverhältnisses bei EUV-Beleuchtungssystemen
WO2001009684A1 (de) * 1999-07-30 2001-02-08 Carl Zeiss Steuerung der beleuchtungsverteilung in der austrittspupille eines euv-beleuchtungssystems
US6285737B1 (en) 2000-01-21 2001-09-04 Euv Llc Condenser for extreme-UV lithography with discharge source
US6625251B2 (en) * 2000-09-22 2003-09-23 Ntt Advanced Technology Corporation Laser plasma x-ray generation apparatus
EP1202100A3 (de) 2000-10-27 2005-04-06 Carl Zeiss SMT AG Beleuchtungssystem mit reduzierter Wärmebelastung
JP2003168642A (ja) * 2001-12-04 2003-06-13 Toyota Central Res & Dev Lab Inc 極紫外光露光装置
CN1273871C (zh) * 2002-03-18 2006-09-06 Asml荷兰有限公司 光刻装置和器件的制作方法
US7170587B2 (en) * 2002-03-18 2007-01-30 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7333178B2 (en) * 2002-03-18 2008-02-19 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1349009B1 (de) * 2002-03-18 2009-02-04 ASML Netherlands B.V. Lithographischer Apparat und Verfahren zur Herstellung eines Artikels
US20050180013A1 (en) * 2002-03-21 2005-08-18 Carl Zeiss Smt Ag Grating element for filtering wavelengths < 100 nm
JP3720788B2 (ja) * 2002-04-15 2005-11-30 キヤノン株式会社 投影露光装置及びデバイス製造方法
DE10219514A1 (de) * 2002-04-30 2003-11-13 Zeiss Carl Smt Ag Beleuchtungssystem, insbesondere für die EUV-Lithographie
US9388427B2 (en) * 2002-12-02 2016-07-12 Biovec, Llc In vivo and ex vivo gene transfer into renal tissue using gutless adenovirus vectors
US7803365B2 (en) * 2002-12-02 2010-09-28 Biovec, Llc Ex vivo and in vivo expression of the thrombomodulin gene for the treatment of cardiovascular and peripheral vascular diseases
WO2004057424A2 (en) * 2002-12-19 2004-07-08 Carl Zeiss Smt Ag Illumination system having a more efficient collector optic
JP5433133B2 (ja) 2003-01-22 2014-03-05 デューク・ユニヴァーシティ リソソームポリペプチドを発現するための改善された構築物
CA2515916A1 (en) * 2003-02-25 2004-09-10 Biovec B.V. Therapeutic applications of thrombomodulin gene via viral and non-viral vectors
US7034320B2 (en) * 2003-03-20 2006-04-25 Intel Corporation Dual hemispherical collectors
DE10317667A1 (de) * 2003-04-17 2004-11-18 Carl Zeiss Smt Ag Optisches Element für ein Beleuchtungssystem
JP2004343082A (ja) 2003-04-17 2004-12-02 Asml Netherlands Bv 凹面および凸面を含む集光器を備えたリトグラフ投影装置
US7136214B2 (en) * 2004-11-12 2006-11-14 Asml Holding N.V. Active faceted mirror system for lithography
US7145634B2 (en) * 2004-12-01 2006-12-05 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
WO2006078431A2 (en) * 2004-12-22 2006-07-27 The University Of Iowa Research Foundation Compositions and methods related to modified retroviral vectors for restricted, site specific integration
US7196343B2 (en) * 2004-12-30 2007-03-27 Asml Netherlands B.V. Optical element, lithographic apparatus including such an optical element, device manufacturing method, and device manufactured thereby
US7405809B2 (en) * 2005-03-21 2008-07-29 Carl Zeiss Smt Ag Illumination system particularly for microlithography
JP5236478B2 (ja) * 2005-11-10 2013-07-17 カール・ツァイス・エスエムティー・ゲーエムベーハー 光源の変動を測定するためのシステムを備えたｅｕｖ照明システム
DE102006059024A1 (de) * 2006-12-14 2008-06-19 Carl Zeiss Smt Ag Projektionsbelichtungsanlage für die Mikrolithographie, Beleuchtungsoptik für eine derartige Projektionsbelichtungsanlage, Verfahren zum Betrieb einer derartigen Projektionsbelichtungsanlage, Verfahren zur Herstellung eines mikrostrukturierten Bauteils sowie durch das Verfahren hergestelltes mikrostrukturiertes Bauteil
DE102007045396A1 (de) * 2007-09-21 2009-04-23 Carl Zeiss Smt Ag Bündelführender optischer Kollektor zur Erfassung der Emission einer Strahlungsquelle
DE102008000788A1 (de) * 2008-03-20 2009-09-24 Carl Zeiss Smt Ag Beleuchtungssystem für eine Mikrolithographie-Projektionsbelichtungsanlage
DE102008000967B4 (de) 2008-04-03 2015-04-09 Carl Zeiss Smt Gmbh Projektionsbelichtungsanlage für die EUV-Mikrolithographie
KR20150090048A (ko) 2012-09-24 2015-08-05 컨버젠트 알.엔.알 리미티드 X-ray 반사 렌즈 배열체
DE102013204441A1 (de) 2013-03-14 2014-04-03 Carl Zeiss Smt Gmbh Kollektor
DE102013218128A1 (de) 2013-09-11 2015-03-12 Carl Zeiss Smt Gmbh Beleuchtungssystem
DE102013218132A1 (de) 2013-09-11 2015-03-12 Carl Zeiss Smt Gmbh Kollektor

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4241389A (en) * 1979-04-25 1980-12-23 Kasper Instruments, Inc. Multiple apparent source optical imaging system
JPS60145620A (ja) * 1984-01-10 1985-08-01 Matsushita Electric Ind Co Ltd パタ−ン形成方法
US4650315A (en) * 1985-05-10 1987-03-17 The Perkin-Elmer Corporation Optical lithographic system
US4711535A (en) * 1985-05-10 1987-12-08 The Perkin-Elmer Corporation Ring field projection system
US4734829A (en) * 1985-11-12 1988-03-29 The Perkin-Elmer Corporation Short arc lamp image transformer
US4891830A (en) * 1986-03-28 1990-01-02 Shimadzu Corporation X-ray reflective mask and system for image formation with use of the same
JPH0235723A (ja) * 1988-07-26 1990-02-06 Matsushita Electric Ind Co Ltd プラズマ・エッチング・モニター方法
US5003567A (en) * 1989-02-09 1991-03-26 Hawryluk Andrew M Soft x-ray reduction camera for submicron lithography
JPH02257783A (ja) * 1989-03-30 1990-10-18 Mitsubishi Electric Corp 静止画テレビ電話伝送方式
US5063586A (en) * 1989-10-13 1991-11-05 At&T Bell Laboratories Apparatus for semiconductor lithography
DE69132160T2 (de) * 1991-07-19 2000-09-28 At & T Corp., New York Lithographie mit ringförmigen Bildfeld

Also Published As

Publication number Publication date
US5339346A (en) 1994-08-16
DE69421447T2 (de) 2000-07-06
KR100381072B1 (ko) 2003-08-06
EP0626621B1 (de) 1999-11-03
JP3291393B2 (ja) 2002-06-10
JPH07169677A (ja) 1995-07-04
KR940027637A (ko) 1994-12-10
HK1005836A1 (en) 1999-01-29
EP0626621A1 (de) 1994-11-30
CA2121819A1 (en) 1994-11-21
CA2121819C (en) 1998-09-15

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