DE69514198D1 - Herstellung einer Vorrichtung unter Verwendung von Mustererzeugender Strahlung im fernen Beziehungsweise extremen UV-Bereich - Google Patents

Herstellung einer Vorrichtung unter Verwendung von Mustererzeugender Strahlung im fernen Beziehungsweise extremen UV-Bereich

Info

Publication number
DE69514198D1
DE69514198D1 DE69514198T DE69514198T DE69514198D1 DE 69514198 D1 DE69514198 D1 DE 69514198D1 DE 69514198 T DE69514198 T DE 69514198T DE 69514198 T DE69514198 T DE 69514198T DE 69514198 D1 DE69514198 D1 DE 69514198D1
Authority
DE
Germany
Prior art keywords
extreme
far
manufacture
range
pattern generating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69514198T
Other languages
English (en)
Other versions
DE69514198T2 (de
Inventor
Donald Milan Tennant
Ii Obert Reeves Wood
Donald L White
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
AT&T Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by AT&T Corp filed Critical AT&T Corp
Application granted granted Critical
Publication of DE69514198D1 publication Critical patent/DE69514198D1/de
Publication of DE69514198T2 publication Critical patent/DE69514198T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70233—Optical aspects of catoptric systems, i.e. comprising only reflective elements, e.g. extreme ultraviolet [EUV] projection systems

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
DE69514198T 1994-10-20 1995-10-11 Herstellung einer Vorrichtung unter Verwendung von Mustererzeugender Strahlung im fernen Beziehungsweise extremen UV-Bereich Expired - Fee Related DE69514198T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/326,444 US5510230A (en) 1994-10-20 1994-10-20 Device fabrication using DUV/EUV pattern delineation

Publications (2)

Publication Number Publication Date
DE69514198D1 true DE69514198D1 (de) 2000-02-03
DE69514198T2 DE69514198T2 (de) 2000-08-24

Family

ID=23272236

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69514198T Expired - Fee Related DE69514198T2 (de) 1994-10-20 1995-10-11 Herstellung einer Vorrichtung unter Verwendung von Mustererzeugender Strahlung im fernen Beziehungsweise extremen UV-Bereich

Country Status (4)

Country Link
US (1) US5510230A (de)
EP (1) EP0710890B1 (de)
JP (1) JP3389380B2 (de)
DE (1) DE69514198T2 (de)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0824721B1 (de) * 1996-03-07 2000-07-26 Koninklijke Philips Electronics N.V. Belichtungssystem und belichtungsgerät für uv-lithographie
US5686728A (en) * 1996-05-01 1997-11-11 Lucent Technologies Inc Projection lithography system and method using all-reflective optical elements
US6297169B1 (en) * 1998-07-27 2001-10-02 Motorola, Inc. Method for forming a semiconductor device using a mask having a self-assembled monolayer
US6309926B1 (en) 1998-12-04 2001-10-30 Advanced Micro Devices Thin resist with nitride hard mask for gate etch application
US6159643A (en) * 1999-03-01 2000-12-12 Advanced Micro Devices, Inc. Extreme ultraviolet lithography reflective mask
US6369398B1 (en) * 1999-03-29 2002-04-09 Barry Gelernt Method of lithography using vacuum ultraviolet radiation
JP3770542B2 (ja) 1999-07-22 2006-04-26 コーニング インコーポレイテッド 遠紫外軟ｘ線投影リソグラフィー法およびマスク装置
JP2001125268A (ja) * 1999-10-28 2001-05-11 Sony Corp 露光方法
DE19958201A1 (de) * 1999-12-02 2001-06-21 Infineon Technologies Ag Lithographieverfahren und Maske zu dessen Durchführung
US6368942B1 (en) * 2000-03-31 2002-04-09 Euv Llc Method for fabricating an ultra-low expansion mask blank having a crystalline silicon layer
US6346362B1 (en) * 2000-06-15 2002-02-12 International Business Machines Corporation Polymers and use thereof
JP2002040660A (ja) * 2000-07-21 2002-02-06 Sony Corp 露光方法
US6645677B1 (en) 2000-09-18 2003-11-11 Micronic Laser Systems Ab Dual layer reticle blank and manufacturing process
US6776006B2 (en) 2000-10-13 2004-08-17 Corning Incorporated Method to avoid striae in EUV lithography mirrors
JP4053263B2 (ja) * 2001-08-17 2008-02-27 株式会社ルネサステクノロジ 半導体装置の製造方法
US6859263B2 (en) * 2001-08-30 2005-02-22 Euv Llc Apparatus for generating partially coherent radiation
US6798494B2 (en) * 2001-08-30 2004-09-28 Euv Llc Apparatus for generating partially coherent radiation
US6927887B2 (en) 2001-10-16 2005-08-09 Euv Llc Holographic illuminator for synchrotron-based projection lithography systems
US7218596B2 (en) * 2003-05-12 2007-05-15 Invent Technologies, Llc Apparatus and method for optical data storage and retrieval
US20050275841A1 (en) * 2004-06-09 2005-12-15 Asml Netherlands B.V. Alignment marker and lithographic apparatus and device manufacturing method using the same
US20070085980A1 (en) * 2005-10-18 2007-04-19 Scott Lerner Projection assembly
US7817246B2 (en) * 2006-06-21 2010-10-19 Asml Netherlands B.V. Optical apparatus
DE102015201230A1 (de) * 2015-01-26 2016-07-28 Dr. Johannes Heidenhain Gmbh Positionsmesseinrichtung
NL2021258B1 (en) * 2018-06-14 2019-12-20 Illumina Inc Device for luminescent imaging

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4890309A (en) * 1987-02-25 1989-12-26 Massachusetts Institute Of Technology Lithography mask with a π-phase shifting attenuator
JP3153230B2 (ja) * 1990-09-10 2001-04-03 株式会社日立製作所 パタン形成方法
US5315629A (en) * 1990-10-10 1994-05-24 At&T Bell Laboratories Ringfield lithography
US5339346A (en) * 1993-05-20 1994-08-16 At&T Bell Laboratories Device fabrication entailing plasma-derived x-ray delineation

Also Published As

Publication number Publication date
EP0710890A1 (de) 1996-05-08
JPH08255747A (ja) 1996-10-01
JP3389380B2 (ja) 2003-03-24
EP0710890B1 (de) 1999-12-29
DE69514198T2 (de) 2000-08-24
US5510230A (en) 1996-04-23

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee