DE3667895D1 - Einrichtung zur erzeugung eines im wesentlichen homogenen plasmas. - Google Patents
Einrichtung zur erzeugung eines im wesentlichen homogenen plasmas.Info
- Publication number
- DE3667895D1 DE3667895D1 DE8686100107T DE3667895T DE3667895D1 DE 3667895 D1 DE3667895 D1 DE 3667895D1 DE 8686100107 T DE8686100107 T DE 8686100107T DE 3667895 T DE3667895 T DE 3667895T DE 3667895 D1 DE3667895 D1 DE 3667895D1
- Authority
- DE
- Germany
- Prior art keywords
- generating
- substantially homogeneous
- homogeneous plasma
- plasma
- homogeneous
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
- H01J37/32155—Frequency modulation
- H01J37/32165—Plural frequencies
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/0011—Working of insulating substrates or insulating layers
- H05K3/0055—After-treatment, e.g. cleaning or desmearing of holes
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/09—Treatments involving charged particles
- H05K2203/095—Plasma, e.g. for treating a substrate to improve adhesion with a conductor or for cleaning holes
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Electromagnetism (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
- ing And Chemical Polishing (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US06/692,145 US4618477A (en) | 1985-01-17 | 1985-01-17 | Uniform plasma for drill smear removal reactor |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3667895D1 true DE3667895D1 (de) | 1990-02-01 |
Family
ID=24779435
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8686100107T Expired - Fee Related DE3667895D1 (de) | 1985-01-17 | 1986-01-07 | Einrichtung zur erzeugung eines im wesentlichen homogenen plasmas. |
Country Status (4)
Country | Link |
---|---|
US (1) | US4618477A (de) |
EP (1) | EP0188206B1 (de) |
JP (1) | JPS61164224A (de) |
DE (1) | DE3667895D1 (de) |
Families Citing this family (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61202438A (ja) * | 1985-03-06 | 1986-09-08 | Ulvac Corp | グロ−放電安定化方法 |
JPS61272928A (ja) * | 1985-05-29 | 1986-12-03 | Ulvac Corp | ドライエツチング方法 |
US4828668A (en) * | 1986-03-10 | 1989-05-09 | Semiconductor Energy Laboratory Co., Ltd. | Sputtering system for deposition on parallel substrates |
DE3629000C1 (de) * | 1986-08-27 | 1987-10-29 | Nukem Gmbh | Verfahren und Vorrichtung zum Ausbilden einer Schicht durch plasmachemischen Prozess |
US4885074A (en) * | 1987-02-24 | 1989-12-05 | International Business Machines Corporation | Plasma reactor having segmented electrodes |
US4991542A (en) * | 1987-10-14 | 1991-02-12 | The Furukawa Electric Co., Ltd. | Method of forming a thin film by plasma CVD and apapratus for forming a thin film |
KR920003431B1 (ko) * | 1988-02-05 | 1992-05-01 | 가부시끼가이샤 한도다이 에네르기 겐뀨쇼 | 플라즈마 처리 방법 및 장치 |
JPH01239917A (ja) * | 1988-03-22 | 1989-09-25 | Semiconductor Energy Lab Co Ltd | プラズマ処理方法 |
JPH01243429A (ja) * | 1988-03-24 | 1989-09-28 | Semiconductor Energy Lab Co Ltd | プラズマ処理方法 |
US4950377A (en) * | 1988-09-23 | 1990-08-21 | Siemens Aktiengesellschaft | Apparatus and method for reactive ion etching |
FR2647293B1 (fr) * | 1989-05-18 | 1996-06-28 | Defitech Sa | Reacteur a plasma perfectionne muni de moyens de couplage d'ondes electromagnetiques |
DE3933619C2 (de) * | 1989-10-07 | 1993-12-23 | Fraunhofer Ges Forschung | Vorrichtungen zur elektrischen Anregung eines Gases mit Mikrowellenenergie |
DE69032952T2 (de) * | 1989-11-15 | 1999-09-30 | Kokusai Electric Co Ltd | Trocken-Behandlungsvorrichtung |
JP2948842B2 (ja) * | 1989-11-24 | 1999-09-13 | 日本真空技術株式会社 | インライン型cvd装置 |
US5020476A (en) * | 1990-04-17 | 1991-06-04 | Ds Research, Inc. | Distributed source assembly |
US5225375A (en) * | 1991-05-20 | 1993-07-06 | Process Technology (1988) Limited | Plasma enhanced chemical vapor processing of semiconductor substrates |
FR2731370B1 (fr) * | 1995-03-07 | 1997-06-06 | Cie Generale D Optique Essilor | Procede pour le depot assiste par plasma d'au moins une couche mince sur un substrat a deux faces, et reacteur correspondant |
ATE403001T1 (de) * | 1996-05-22 | 2008-08-15 | Viventia Biotech Inc | Antigenbindungsfragmente die spezifisch krebszellen nachweisen, nukleotide die für diese fragmente kodieren, und deren verwendung zur vorbeugung und zum nachweis von krebs |
JP3196657B2 (ja) * | 1996-09-18 | 2001-08-06 | 松下電器産業株式会社 | 表面処理装置及び表面処理方法 |
JPH10214822A (ja) * | 1997-01-30 | 1998-08-11 | Nec Corp | プラズマエッチング装置およびエッチング方法 |
US7115722B1 (en) | 1997-05-22 | 2006-10-03 | Viventia Biotech, Inc. | Antigen binding fragments that specifically detect cancer cells, nucleotides encoding the fragments, and use thereof for the prophylaxis and detection of cancers |
US20020122807A1 (en) * | 1998-07-07 | 2002-09-05 | Dan Michael D. | Antigen binding fragments, designated 4B5, that specifically detect cancer cells, nucleotides encoding the fragments, and use thereof for the prophylaxis and detection of cancers |
JP4659238B2 (ja) * | 2001-03-06 | 2011-03-30 | 株式会社カネカ | 半導体層の製膜方法 |
US20030048591A1 (en) * | 2001-09-10 | 2003-03-13 | Saturn Vac Co., Ltd. | Desmearing process/apparatus for pulse-type D.C. plasma |
JP4584722B2 (ja) * | 2005-01-13 | 2010-11-24 | シャープ株式会社 | プラズマ処理装置および同装置により製造された半導体素子 |
US20090169341A1 (en) * | 2008-01-01 | 2009-07-02 | Dongguan Anwell Digital Machinery Ltd. | Method and system for handling objects in chambers |
CN102598286A (zh) * | 2009-09-06 | 2012-07-18 | 张晗钟 | 管状光伏器件和制造方法 |
JP6452199B2 (ja) * | 2015-07-16 | 2019-01-16 | 株式会社Kokusai Electric | 基板処理装置、半導体装置の製造方法およびプログラム |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1122558A (en) * | 1966-03-22 | 1968-08-07 | Allis Chalmers Mfg Co | Process for producing cf and ccif |
US3461054A (en) * | 1966-03-24 | 1969-08-12 | Bell Telephone Labor Inc | Cathodic sputtering from a cathodically biased target electrode having an rf potential superimposed on the cathodic bias |
US3600126A (en) * | 1968-02-05 | 1971-08-17 | Emil J Hellund | Asepsis process and apparatus |
US3702258A (en) * | 1969-03-05 | 1972-11-07 | Eastman Kodak Co | Web treatment method |
US3860507A (en) * | 1972-11-29 | 1975-01-14 | Rca Corp | Rf sputtering apparatus and method |
US4013532A (en) * | 1975-03-03 | 1977-03-22 | Airco, Inc. | Method for coating a substrate |
US4233109A (en) * | 1976-01-16 | 1980-11-11 | Zaidan Hojin Handotai Kenkyu Shinkokai | Dry etching method |
JPS5846057B2 (ja) * | 1979-03-19 | 1983-10-14 | 富士通株式会社 | プラズマ処理方法 |
US4285800A (en) * | 1979-04-18 | 1981-08-25 | Branson International Plasma Corp. | Gas plasma reactor for circuit boards and the like |
US4264813A (en) * | 1979-06-29 | 1981-04-28 | International Business Machines Corportion | High intensity ion source using ionic conductors |
US4289598A (en) * | 1980-05-03 | 1981-09-15 | Technics, Inc. | Plasma reactor and method therefor |
US4474659A (en) * | 1982-05-28 | 1984-10-02 | Fazal Fazlin | Plated-through-hole method |
JPS5970762A (ja) * | 1982-10-14 | 1984-04-21 | Ulvac Corp | プラズマcvd装置 |
-
1985
- 1985-01-17 US US06/692,145 patent/US4618477A/en not_active Expired - Fee Related
- 1985-08-16 JP JP60179578A patent/JPS61164224A/ja active Granted
-
1986
- 1986-01-07 EP EP86100107A patent/EP0188206B1/de not_active Expired
- 1986-01-07 DE DE8686100107T patent/DE3667895D1/de not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP0188206A3 (en) | 1987-10-07 |
US4618477A (en) | 1986-10-21 |
EP0188206B1 (de) | 1989-12-27 |
EP0188206A2 (de) | 1986-07-23 |
JPH0365892B2 (de) | 1991-10-15 |
JPS61164224A (ja) | 1986-07-24 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |