HK1005836A1 - Device fabrication entailing plasma-derived x-ray delineation - Google Patents

Device fabrication entailing plasma-derived x-ray delineation

Info

Publication number
HK1005836A1
HK1005836A1 HK98105057A HK98105057A HK1005836A1 HK 1005836 A1 HK1005836 A1 HK 1005836A1 HK 98105057 A HK98105057 A HK 98105057A HK 98105057 A HK98105057 A HK 98105057A HK 1005836 A1 HK1005836 A1 HK 1005836A1
Authority
HK
Hong Kong
Prior art keywords
plasma
derived
device fabrication
delineation
ray
Prior art date
Application number
HK98105057A
Other languages
English (en)
Inventor
Donald Lawrence White
Original Assignee
At & T Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by At & T Corp filed Critical At & T Corp
Publication of HK1005836A1 publication Critical patent/HK1005836A1/xx

Links

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/702—Reflective illumination, i.e. reflective optical elements other than folding mirrors, e.g. extreme ultraviolet [EUV] illumination systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70233—Optical aspects of catoptric systems, i.e. comprising only reflective elements, e.g. extreme ultraviolet [EUV] projection systems
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
    • G21K1/06—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction or reflection, e.g. monochromators

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Plasma & Fusion (AREA)
  • Mathematical Physics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Theoretical Computer Science (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Optics & Photonics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • X-Ray Techniques (AREA)
HK98105057A 1993-05-20 1998-06-09 Device fabrication entailing plasma-derived x-ray delineation HK1005836A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/065,331 US5339346A (en) 1993-05-20 1993-05-20 Device fabrication entailing plasma-derived x-ray delineation

Publications (1)

Publication Number Publication Date
HK1005836A1 true HK1005836A1 (en) 1999-01-29

Family

ID=22061967

Family Applications (1)

Application Number Title Priority Date Filing Date
HK98105057A HK1005836A1 (en) 1993-05-20 1998-06-09 Device fabrication entailing plasma-derived x-ray delineation

Country Status (7)

Country Link
US (1) US5339346A (xx)
EP (1) EP0626621B1 (xx)
JP (1) JP3291393B2 (xx)
KR (1) KR100381072B1 (xx)
CA (1) CA2121819C (xx)
DE (1) DE69421447T2 (xx)
HK (1) HK1005836A1 (xx)

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JP3499592B2 (ja) * 1994-01-31 2004-02-23 株式会社ルネサステクノロジ 投影露光装置及びパターン転写方法
US5510230A (en) * 1994-10-20 1996-04-23 At&T Corp. Device fabrication using DUV/EUV pattern delineation
US5521031A (en) * 1994-10-20 1996-05-28 At&T Corp. Pattern delineating apparatus for use in the EUV spectrum
US5512759A (en) * 1995-06-06 1996-04-30 Sweatt; William C. Condenser for illuminating a ringfield camera with synchrotron emission light
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US5920380A (en) 1997-12-19 1999-07-06 Sandia Corporation Apparatus and method for generating partially coherent illumination for photolithography
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US20050002090A1 (en) * 1998-05-05 2005-01-06 Carl Zeiss Smt Ag EUV illumination system having a folding geometry
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DE19908526A1 (de) 1999-02-26 2000-08-31 Zeiss Carl Fa Beleuchtungssystem mit Feldspiegeln zur Erzielung einer gleichförmigen Scanenergie
US6438199B1 (en) 1998-05-05 2002-08-20 Carl-Zeiss-Stiftung Illumination system particularly for microlithography
USRE41667E1 (en) * 1998-05-05 2010-09-14 Carl Zeiss Smt Ag Illumination system particularly for microlithography
US7329886B2 (en) * 1998-05-05 2008-02-12 Carl Zeiss Smt Ag EUV illumination system having a plurality of light sources for illuminating an optical element
US7186983B2 (en) * 1998-05-05 2007-03-06 Carl Zeiss Smt Ag Illumination system particularly for microlithography
US20070030948A1 (en) * 1998-05-05 2007-02-08 Carl Zeiss Smt Ag Illumination system with field mirrors for producing uniform scanning energy
DE10053587A1 (de) * 2000-10-27 2002-05-02 Zeiss Carl Beleuchtungssystem mit variabler Einstellung der Ausleuchtung
DE19903807A1 (de) * 1998-05-05 1999-11-11 Zeiss Carl Fa Beleuchtungssystem insbesondere für die EUV-Lithographie
US7006595B2 (en) * 1998-05-05 2006-02-28 Carl Zeiss Semiconductor Manufacturing Technologies Ag Illumination system particularly for microlithography
US7109497B2 (en) * 1998-05-05 2006-09-19 Carl Zeiss Smt Ag Illumination system particularly for microlithography
US6858853B2 (en) * 1998-05-05 2005-02-22 Carl Zeiss Smt Ag Illumination system particularly for microlithography
US7142285B2 (en) * 1998-05-05 2006-11-28 Carl Zeiss Smt Ag Illumination system particularly for microlithography
EP0955641B1 (de) 1998-05-05 2004-04-28 Carl Zeiss Beleuchtungssystem insbesondere für die EUV-Lithographie
US6947124B2 (en) 1998-05-05 2005-09-20 Carl Zeiss Smt Ag Illumination system particularly for microlithography
USRE42065E1 (en) 1998-05-05 2011-01-25 Carl Zeiss Smt Ag Illumination system particularly for microlithography
US6947120B2 (en) * 1998-05-05 2005-09-20 Carl Zeiss Smt Ag Illumination system particularly for microlithography
DE19935404A1 (de) 1999-07-30 2001-02-01 Zeiss Carl Fa Beleuchtungssystem mit mehreren Lichtquellen
US6859328B2 (en) * 1998-05-05 2005-02-22 Carl Zeiss Semiconductor Illumination system particularly for microlithography
DE10100265A1 (de) * 2001-01-08 2002-07-11 Zeiss Carl Beleuchtungssystem mit Rasterelementen unterschiedlicher Größe
US7126137B2 (en) * 1998-05-05 2006-10-24 Carl Zeiss Smt Ag Illumination system with field mirrors for producing uniform scanning energy
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US6118577A (en) * 1998-08-06 2000-09-12 Euv, L.L.C Diffractive element in extreme-UV lithography condenser
US6469827B1 (en) 1998-08-06 2002-10-22 Euv Llc Diffraction spectral filter for use in extreme-UV lithography condenser
US6225027B1 (en) * 1998-08-06 2001-05-01 Euv Llc Extreme-UV lithography system
JP2000091220A (ja) 1998-09-08 2000-03-31 Nikon Corp 投影露光装置及び投影露光方法
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US7248667B2 (en) * 1999-05-04 2007-07-24 Carl Zeiss Smt Ag Illumination system with a grating element
DE19921597C1 (de) 1999-05-07 2000-07-27 Maier Zerkleinerungsanlage Gmb Messerring-Zerspaner zum Zerspanen von Hackschnitzeln
DE19931848A1 (de) 1999-07-09 2001-01-11 Zeiss Carl Fa Astigmatische Komponenten zur Reduzierung des Wabenaspektverhältnisses bei EUV-Beleuchtungssystemen
WO2001009684A1 (de) 1999-07-30 2001-02-08 Carl Zeiss Steuerung der beleuchtungsverteilung in der austrittspupille eines euv-beleuchtungssystems
US6285737B1 (en) 2000-01-21 2001-09-04 Euv Llc Condenser for extreme-UV lithography with discharge source
US6625251B2 (en) * 2000-09-22 2003-09-23 Ntt Advanced Technology Corporation Laser plasma x-ray generation apparatus
EP1202100A3 (de) 2000-10-27 2005-04-06 Carl Zeiss SMT AG Beleuchtungssystem mit reduzierter Wärmebelastung
JP2003168642A (ja) * 2001-12-04 2003-06-13 Toyota Central Res & Dev Lab Inc 極紫外光露光装置
US7333178B2 (en) * 2002-03-18 2008-02-19 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1349009B1 (en) * 2002-03-18 2009-02-04 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
US7170587B2 (en) * 2002-03-18 2007-01-30 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
CN1273871C (zh) * 2002-03-18 2006-09-06 Asml荷兰有限公司 光刻装置和器件的制作方法
US20050180013A1 (en) * 2002-03-21 2005-08-18 Carl Zeiss Smt Ag Grating element for filtering wavelengths < 100 nm
JP3720788B2 (ja) * 2002-04-15 2005-11-30 キヤノン株式会社 投影露光装置及びデバイス製造方法
DE10219514A1 (de) * 2002-04-30 2003-11-13 Zeiss Carl Smt Ag Beleuchtungssystem, insbesondere für die EUV-Lithographie
US7803365B2 (en) * 2002-12-02 2010-09-28 Biovec, Llc Ex vivo and in vivo expression of the thrombomodulin gene for the treatment of cardiovascular and peripheral vascular diseases
US9388427B2 (en) * 2002-12-02 2016-07-12 Biovec, Llc In vivo and ex vivo gene transfer into renal tissue using gutless adenovirus vectors
DE60319735T2 (de) * 2002-12-19 2009-04-16 Carl Zeiss Smt Ag Beleuchtungssytem mit einer effizienteren kollektoroptik
ES2371913T3 (es) 2003-01-22 2012-01-11 Duke University Constructos mejorados para expresar polipéptidos lisosomales.
WO2004076635A2 (en) * 2003-02-25 2004-09-10 Biovec B.V. Therapeutic applications of thrombomodulin gene via viral and non-viral vectors
US7034320B2 (en) 2003-03-20 2006-04-25 Intel Corporation Dual hemispherical collectors
DE10317667A1 (de) * 2003-04-17 2004-11-18 Carl Zeiss Smt Ag Optisches Element für ein Beleuchtungssystem
JP2004343082A (ja) 2003-04-17 2004-12-02 Asml Netherlands Bv 凹面および凸面を含む集光器を備えたリトグラフ投影装置
US7136214B2 (en) * 2004-11-12 2006-11-14 Asml Holding N.V. Active faceted mirror system for lithography
US7145634B2 (en) * 2004-12-01 2006-12-05 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7470777B2 (en) * 2004-12-22 2008-12-30 Iowa State University Research Foundation, Inc. Compositions and methods related to modified retroviral vectors for restricted, site specific integration
US7196343B2 (en) * 2004-12-30 2007-03-27 Asml Netherlands B.V. Optical element, lithographic apparatus including such an optical element, device manufacturing method, and device manufactured thereby
US7405809B2 (en) * 2005-03-21 2008-07-29 Carl Zeiss Smt Ag Illumination system particularly for microlithography
WO2007054291A1 (en) * 2005-11-10 2007-05-18 Carl Zeiss Smt Ag Euv illumination system with a system for measuring fluctuations of the light source
DE102006059024A1 (de) * 2006-12-14 2008-06-19 Carl Zeiss Smt Ag Projektionsbelichtungsanlage für die Mikrolithographie, Beleuchtungsoptik für eine derartige Projektionsbelichtungsanlage, Verfahren zum Betrieb einer derartigen Projektionsbelichtungsanlage, Verfahren zur Herstellung eines mikrostrukturierten Bauteils sowie durch das Verfahren hergestelltes mikrostrukturiertes Bauteil
DE102007045396A1 (de) * 2007-09-21 2009-04-23 Carl Zeiss Smt Ag Bündelführender optischer Kollektor zur Erfassung der Emission einer Strahlungsquelle
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DE102008000967B4 (de) 2008-04-03 2015-04-09 Carl Zeiss Smt Gmbh Projektionsbelichtungsanlage für die EUV-Mikrolithographie
KR20150090048A (ko) * 2012-09-24 2015-08-05 컨버젠트 알.엔.알 리미티드 X-ray 반사 렌즈 배열체
DE102013204441A1 (de) 2013-03-14 2014-04-03 Carl Zeiss Smt Gmbh Kollektor
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Also Published As

Publication number Publication date
KR100381072B1 (ko) 2003-08-06
EP0626621A1 (en) 1994-11-30
JPH07169677A (ja) 1995-07-04
DE69421447T2 (de) 2000-07-06
CA2121819A1 (en) 1994-11-21
CA2121819C (en) 1998-09-15
US5339346A (en) 1994-08-16
EP0626621B1 (en) 1999-11-03
KR940027637A (ko) 1994-12-10
JP3291393B2 (ja) 2002-06-10
DE69421447D1 (de) 1999-12-09

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Legal Events

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PC Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee)