DE69132160T2 - Lithographie mit ringförmigen Bildfeld - Google Patents
Lithographie mit ringförmigen BildfeldInfo
- Publication number
- DE69132160T2 DE69132160T2 DE1991632160 DE69132160T DE69132160T2 DE 69132160 T2 DE69132160 T2 DE 69132160T2 DE 1991632160 DE1991632160 DE 1991632160 DE 69132160 T DE69132160 T DE 69132160T DE 69132160 T2 DE69132160 T2 DE 69132160T2
- Authority
- DE
- Germany
- Prior art keywords
- lithography
- ring
- image field
- shaped image
- shaped
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B17/00—Systems with reflecting surfaces, with or without refracting elements
- G02B17/02—Catoptric systems, e.g. image erecting and reversing system
- G02B17/06—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror
- G02B17/0647—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror using more than three curved mirrors
- G02B17/0657—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror using more than three curved mirrors off-axis or unobscured systems in which all of the mirrors share a common axis of rotational symmetry
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2037—Exposure with X-ray radiation or corpuscular radiation, through a mask with a pattern opaque to that radiation
- G03F7/2039—X-ray radiation
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70008—Production of exposure light, i.e. light sources
- G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70066—Size and form of the illuminated area in the mask plane, e.g. reticle masking blades or blinds
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70233—Optical aspects of catoptric systems, i.e. comprising only reflective elements, e.g. extreme ultraviolet [EUV] projection systems
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70283—Mask effects on the imaging process
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70358—Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Plasma & Fusion (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Optics & Photonics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Lenses (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/732,559 US5315629A (en) | 1990-10-10 | 1991-07-19 | Ringfield lithography |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69132160D1 DE69132160D1 (de) | 2000-06-08 |
DE69132160T2 true DE69132160T2 (de) | 2000-09-28 |
Family
ID=24944023
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE1991632160 Expired - Fee Related DE69132160T2 (de) | 1991-07-19 | 1991-10-02 | Lithographie mit ringförmigen Bildfeld |
Country Status (3)
Country | Link |
---|---|
EP (1) | EP0523303B1 (de) |
JP (3) | JPH0536588A (de) |
DE (1) | DE69132160T2 (de) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5339346A (en) * | 1993-05-20 | 1994-08-16 | At&T Bell Laboratories | Device fabrication entailing plasma-derived x-ray delineation |
JP3521506B2 (ja) * | 1994-11-24 | 2004-04-19 | 株式会社ニコン | 照明装置及び露光装置 |
US8208198B2 (en) | 2004-01-14 | 2012-06-26 | Carl Zeiss Smt Gmbh | Catadioptric projection objective |
FR2860304B1 (fr) * | 2003-09-26 | 2005-11-25 | Sagem | Systeme optique a haute ouverture numerique |
US20080151365A1 (en) | 2004-01-14 | 2008-06-26 | Carl Zeiss Smt Ag | Catadioptric projection objective |
DE602005003665T2 (de) | 2004-05-17 | 2008-11-20 | Carl Zeiss Smt Ag | Katadioptrisches projektionsobjektiv mit zwischenbildern |
JP4935886B2 (ja) * | 2009-12-10 | 2012-05-23 | 三菱電機株式会社 | 画像読取装置 |
CN102870030B (zh) * | 2010-04-22 | 2015-04-08 | 卡尔蔡司Smt有限责任公司 | 成像光学系统和具有这种成像光学系统的用于微光刻的投射曝光设备 |
US8842272B2 (en) * | 2011-01-11 | 2014-09-23 | Kla-Tencor Corporation | Apparatus for EUV imaging and methods of using same |
JP5008012B2 (ja) * | 2011-01-28 | 2012-08-22 | レーザーテック株式会社 | 検査装置、及び検査方法 |
CN107421639B (zh) * | 2017-05-05 | 2023-09-29 | 安徽谱泉光谱科技有限公司 | 材料表面处理工艺过程中的等离子体三维信息诊断系统 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4240707A (en) * | 1978-12-07 | 1980-12-23 | Itek Corporation | All-reflective three element objective |
US4733955A (en) * | 1986-04-14 | 1988-03-29 | Hughes Aircraft Company | Reflective optical triplet having a real entrance pupil |
EP0947882B1 (de) * | 1986-07-11 | 2006-03-29 | Canon Kabushiki Kaisha | Verkleinerndes Projektionsbelichtungssystem des Reflexionstyps für Röntgenstrahlung |
US5063586A (en) * | 1989-10-13 | 1991-11-05 | At&T Bell Laboratories | Apparatus for semiconductor lithography |
-
1991
- 1991-10-02 EP EP19910309020 patent/EP0523303B1/de not_active Expired - Lifetime
- 1991-10-02 DE DE1991632160 patent/DE69132160T2/de not_active Expired - Fee Related
- 1991-10-11 JP JP3263828A patent/JPH0536588A/ja active Pending
-
2002
- 2002-02-08 JP JP2002031940A patent/JP2002324755A/ja active Pending
-
2003
- 2003-06-04 JP JP2003159765A patent/JP2004006908A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
JPH0536588A (ja) | 1993-02-12 |
EP0523303A1 (de) | 1993-01-20 |
JP2004006908A (ja) | 2004-01-08 |
JP2002324755A (ja) | 2002-11-08 |
DE69132160D1 (de) | 2000-06-08 |
EP0523303B1 (de) | 2000-05-03 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |