DE69404432D1 - Laser mit Streifenstruktur und Herstellungsverfahren - Google Patents

Laser mit Streifenstruktur und Herstellungsverfahren

Info

Publication number
DE69404432D1
DE69404432D1 DE69404432T DE69404432T DE69404432D1 DE 69404432 D1 DE69404432 D1 DE 69404432D1 DE 69404432 T DE69404432 T DE 69404432T DE 69404432 T DE69404432 T DE 69404432T DE 69404432 D1 DE69404432 D1 DE 69404432D1
Authority
DE
Germany
Prior art keywords
manufacturing process
striped laser
striped
laser
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69404432T
Other languages
English (en)
Other versions
DE69404432T2 (de
Inventor
Hiroaki Fujii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Electronics Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Publication of DE69404432D1 publication Critical patent/DE69404432D1/de
Application granted granted Critical
Publication of DE69404432T2 publication Critical patent/DE69404432T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2206—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on III-V materials
    • H01S5/2209—GaInP based
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2206—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on III-V materials
    • H01S5/221—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on III-V materials containing aluminium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34326—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on InGa(Al)P, e.g. red laser
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/095—Laser devices

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Nanotechnology (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
DE69404432T 1993-12-10 1994-12-08 Laser mit Streifenstruktur und Herstellungsverfahren Expired - Fee Related DE69404432T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5341316A JP2822868B2 (ja) 1993-12-10 1993-12-10 半導体レーザの製造方法

Publications (2)

Publication Number Publication Date
DE69404432D1 true DE69404432D1 (de) 1997-08-28
DE69404432T2 DE69404432T2 (de) 1998-02-26

Family

ID=18345119

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69404432T Expired - Fee Related DE69404432T2 (de) 1993-12-10 1994-12-08 Laser mit Streifenstruktur und Herstellungsverfahren

Country Status (4)

Country Link
US (1) US5478775A (de)
EP (1) EP0657977B1 (de)
JP (1) JP2822868B2 (de)
DE (1) DE69404432T2 (de)

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US6026106A (en) * 1997-03-26 2000-02-15 Mitsubishi Denki Kabushiki Kaisha Composite optical device
JP3672062B2 (ja) * 1997-07-16 2005-07-13 三菱電機株式会社 半導体レーザ，及びその製造方法
JP3267582B2 (ja) 1999-06-17 2002-03-18 日本電気株式会社 半導体レーザの製造方法
AU2003301057A1 (en) 2002-12-20 2004-07-22 Cree, Inc. Methods of forming semiconductor mesa structures including self-aligned contact layers and related devices
KR100558437B1 (ko) * 2003-06-24 2006-03-10 삼성전기주식회사 반도체 레이저의 제조방법
JP2005085977A (ja) * 2003-09-09 2005-03-31 Sharp Corp 半導体レーザ素子および半導体レーザ素子の製造方法
US8487354B2 (en) * 2009-08-21 2013-07-16 Taiwan Semiconductor Manufacturing Company, Ltd. Method for improving selectivity of epi process
DE102010046793B4 (de) 2010-09-28 2024-05-08 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Kantenemittierende Halbleiterlaserdiode und Verfahren zu dessen Herstellung

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4213805A (en) * 1973-05-28 1980-07-22 Hitachi, Ltd. Liquid phase epitaxy method of forming a filimentary laser device
US4147571A (en) * 1977-07-11 1979-04-03 Hewlett-Packard Company Method for vapor epitaxial deposition of III/V materials utilizing organometallic compounds and a halogen or halide in a hot wall system
DE3105786A1 (de) * 1981-02-17 1982-09-02 Siemens AG, 1000 Berlin und 8000 München Herstellung von lumineszenz- oder laserdioden mit intern begrenzter leuchtflaeche
JPS6050983A (ja) * 1983-08-30 1985-03-22 Sharp Corp 半導体レ−ザ素子の製造方法
JPS61180493A (ja) * 1985-02-05 1986-08-13 Matsushita Electric Ind Co Ltd 半導体レ−ザ素子の製造方法
JPH0710019B2 (ja) * 1987-01-17 1995-02-01 日本電信電話株式会社 埋込み構造半導体レ−ザの製造方法
JPH01175727A (ja) * 1987-12-29 1989-07-12 Nec Corp ３−ｖ族化合物半導体の選択埋め込み成長方法
JPH0231487A (ja) * 1988-07-20 1990-02-01 Mitsubishi Electric Corp 半導体レーザ装置とその製造方法
US5173447A (en) * 1989-10-31 1992-12-22 The Furukawa Electric Co., Ltd. Method for producing strained quantum well semiconductor laser elements
JPH03161987A (ja) * 1989-11-20 1991-07-11 Sanyo Electric Co Ltd 半導体レーザ装置
JP2549182B2 (ja) * 1990-01-05 1996-10-30 住友電気工業株式会社 半導体レーザ素子
US5268328A (en) * 1990-09-07 1993-12-07 Matsushita Electric Industrial Co., Ltd. Method of fabricating a semiconductor laser
US5210767A (en) * 1990-09-20 1993-05-11 Mitsubishi Denki Kabushiki Kaisha Semiconductor laser
FR2667197B1 (fr) * 1990-09-20 1993-12-24 Rosette Azoulay Procede d'epitaxie selective et de gravure de materiau iii-v ou ii-vi dans un meme bati de croissance omcvd.
JPH04154184A (ja) * 1990-10-18 1992-05-27 Nec Corp 半導体レーザ装置とその製造方法
EP0982763A1 (de) * 1991-07-05 2000-03-01 Mitsubishi Kasei Corporation Aufwachsen von III-V Verbindungshalbleiter-Schichten mittels MOVPE
JP3129779B2 (ja) * 1991-08-30 2001-01-31 株式会社東芝 半導体レーザ装置
JPH05291683A (ja) * 1992-04-10 1993-11-05 Fujitsu Ltd 半導体発光素子及びその製造方法
JPH0697569A (ja) * 1992-09-14 1994-04-08 Fujitsu Ltd 半導体レーザの製造方法
JP3444610B2 (ja) * 1992-09-29 2003-09-08 三菱化学株式会社 半導体レーザ装置
JPH0750445A (ja) * 1993-06-02 1995-02-21 Rohm Co Ltd 半導体レーザの製法

Also Published As

Publication number Publication date
JPH07162093A (ja) 1995-06-23
EP0657977A2 (de) 1995-06-14
JP2822868B2 (ja) 1998-11-11
DE69404432T2 (de) 1998-02-26
EP0657977B1 (de) 1997-07-23
US5478775A (en) 1995-12-26
EP0657977A3 (de) 1995-12-27

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: NEC COMPOUND SEMICONDUCTOR DEVICES, LTD., KAWASAKI

8327 Change in the person/name/address of the patent owner

Owner name: NEC ELECTRONICS CORP., KAWASAKI, KANAGAWA, JP

8339 Ceased/non-payment of the annual fee