DE69330564D1 - Integrierte Schaltung die eine EEPROM-Zelle und einen MOS-Transistor enthält - Google Patents

Integrierte Schaltung die eine EEPROM-Zelle und einen MOS-Transistor enthält

Info

Publication number
DE69330564D1
DE69330564D1 DE69330564T DE69330564T DE69330564D1 DE 69330564 D1 DE69330564 D1 DE 69330564D1 DE 69330564 T DE69330564 T DE 69330564T DE 69330564 T DE69330564 T DE 69330564T DE 69330564 D1 DE69330564 D1 DE 69330564D1
Authority
DE
Germany
Prior art keywords
integrated circuit
mos transistor
eeprom cell
eeprom
cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69330564T
Other languages
English (en)
Other versions
DE69330564T2 (de
Inventor
Claudio Contiero
Stefano Manzini
Tiziana Cavioni
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SRL
Original Assignee
STMicroelectronics SRL
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SRL filed Critical STMicroelectronics SRL
Application granted granted Critical
Publication of DE69330564D1 publication Critical patent/DE69330564D1/de
Publication of DE69330564T2 publication Critical patent/DE69330564T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/105Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0617Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
    • H01L27/0623Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with bipolar transistors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H01L27/0922Combination of complementary transistors having a different structure, e.g. stacked CMOS, high-voltage and low-voltage CMOS

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
DE69330564T 1993-12-15 1993-12-15 Integrierte Schaltung die eine EEPROM-Zelle und einen MOS-Transistor enthält Expired - Fee Related DE69330564T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP93830505A EP0658938B1 (de) 1993-12-15 1993-12-15 Integrierte Schaltung die eine EEPROM-Zelle und einen MOS-Transistor enthält

Publications (2)

Publication Number Publication Date
DE69330564D1 true DE69330564D1 (de) 2001-09-13
DE69330564T2 DE69330564T2 (de) 2002-06-27

Family

ID=8215280

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69330564T Expired - Fee Related DE69330564T2 (de) 1993-12-15 1993-12-15 Integrierte Schaltung die eine EEPROM-Zelle und einen MOS-Transistor enthält

Country Status (4)

Country Link
US (2) US5610421A (de)
EP (1) EP0658938B1 (de)
JP (1) JP2744592B2 (de)
DE (1) DE69330564T2 (de)

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EP1071133B1 (de) * 1999-07-21 2010-04-21 STMicroelectronics Srl Verfahren zum Herstellen von CMOS Transistoren nichtflüchtiger Speicher und von vertikalen Bipolartransistoren mit hohem Verstärkungsfaktor
US6911694B2 (en) * 2001-06-27 2005-06-28 Ricoh Company, Ltd. Semiconductor device and method for fabricating such device
US6710424B2 (en) 2001-09-21 2004-03-23 Airip RF chipset architecture
US7005338B2 (en) * 2002-09-19 2006-02-28 Promos Technologies Inc. Nonvolatile memory cell with a floating gate at least partially located in a trench in a semiconductor substrate
US20060116157A1 (en) * 2002-10-15 2006-06-01 Kazuaki Takamori Portable type electronic apparatus
WO2004036069A1 (ja) * 2002-10-15 2004-04-29 Matsushita Electric Industrial Co., Ltd. 携帯型電子機器
US7019377B2 (en) * 2002-12-17 2006-03-28 Micrel, Inc. Integrated circuit including high voltage devices and low voltage devices
JP4437388B2 (ja) * 2003-02-06 2010-03-24 株式会社リコー 半導体装置
US7119393B1 (en) * 2003-07-28 2006-10-10 Actel Corporation Transistor having fully-depleted junctions to reduce capacitance and increase radiation immunity in an integrated circuit
US7038274B2 (en) 2003-11-13 2006-05-02 Volterra Semiconductor Corporation Switching regulator with high-side p-type device
US7163856B2 (en) 2003-11-13 2007-01-16 Volterra Semiconductor Corporation Method of fabricating a lateral double-diffused mosfet (LDMOS) transistor and a conventional CMOS transistor
US7074659B2 (en) * 2003-11-13 2006-07-11 Volterra Semiconductor Corporation Method of fabricating a lateral double-diffused MOSFET (LDMOS) transistor
US7220633B2 (en) 2003-11-13 2007-05-22 Volterra Semiconductor Corporation Method of fabricating a lateral double-diffused MOSFET
US8212317B2 (en) * 2004-01-29 2012-07-03 Enpirion, Inc. Integrated circuit with a laterally diffused metal oxide semiconductor device and method of forming the same
US7230302B2 (en) * 2004-01-29 2007-06-12 Enpirion, Inc. Laterally diffused metal oxide semiconductor device and method of forming the same
US8253197B2 (en) * 2004-01-29 2012-08-28 Enpirion, Inc. Integrated circuit with a laterally diffused metal oxide semiconductor device and method of forming the same
US8253195B2 (en) * 2004-01-29 2012-08-28 Enpirion, Inc. Integrated circuit with a laterally diffused metal oxide semiconductor device and method of forming the same
US8253196B2 (en) 2004-01-29 2012-08-28 Enpirion, Inc. Integrated circuit with a laterally diffused metal oxide semiconductor device and method of forming the same
US8212315B2 (en) * 2004-01-29 2012-07-03 Enpirion, Inc. Integrated circuit with a laterally diffused metal oxide semiconductor device and method of forming the same
US8212316B2 (en) * 2004-01-29 2012-07-03 Enpirion, Inc. Integrated circuit with a laterally diffused metal oxide semiconductor device and method of forming the same
US7232733B2 (en) * 2004-08-23 2007-06-19 Enpirion, Inc. Method of forming an integrated circuit incorporating higher voltage devices and low voltage devices therein
US7229886B2 (en) * 2004-08-23 2007-06-12 Enpirion, Inc. Method of forming an integrated circuit incorporating higher voltage devices and low voltage devices therein
US7195981B2 (en) * 2004-08-23 2007-03-27 Enpirion, Inc. Method of forming an integrated circuit employable with a power converter
US7186606B2 (en) * 2004-08-23 2007-03-06 Enpirion, Inc. Method of forming an integrated circuit employable with a power converter
US7214985B2 (en) * 2004-08-23 2007-05-08 Enpirion, Inc. Integrated circuit incorporating higher voltage devices and low voltage devices therein
US7335948B2 (en) * 2004-08-23 2008-02-26 Enpirion, Inc. Integrated circuit incorporating higher voltage devices and low voltage devices therein
US7190026B2 (en) * 2004-08-23 2007-03-13 Enpirion, Inc. Integrated circuit employable with a power converter
US7405443B1 (en) 2005-01-07 2008-07-29 Volterra Semiconductor Corporation Dual gate lateral double-diffused MOSFET (LDMOS) transistor
KR100792369B1 (ko) * 2006-01-13 2008-01-09 주식회사 하이닉스반도체 플래시메모리소자 및 그의 제조 방법
JP2012004471A (ja) * 2010-06-21 2012-01-05 Toshiba Corp 半導体装置及びその製造方法
US9214457B2 (en) 2011-09-20 2015-12-15 Alpha & Omega Semiconductor Incorporated Method of integrating high voltage devices
US9443839B2 (en) 2012-11-30 2016-09-13 Enpirion, Inc. Semiconductor device including gate drivers around a periphery thereof
US9673192B1 (en) 2013-11-27 2017-06-06 Altera Corporation Semiconductor device including a resistor metallic layer and method of forming the same
US10020739B2 (en) 2014-03-27 2018-07-10 Altera Corporation Integrated current replicator and method of operating the same
US9536938B1 (en) 2013-11-27 2017-01-03 Altera Corporation Semiconductor device including a resistor metallic layer and method of forming the same
US10103627B2 (en) 2015-02-26 2018-10-16 Altera Corporation Packaged integrated circuit including a switch-mode regulator and method of forming the same
US9853034B2 (en) * 2016-04-05 2017-12-26 Texas Instruments Incorporated Embedded memory with enhanced channel stop implants
US9831305B1 (en) * 2016-05-06 2017-11-28 Vanguard International Semiconductor Corporation Semiconductor device and method for manufacturing the same
CN115768111B (zh) * 2023-01-09 2023-04-14 苏州贝克微电子股份有限公司 一种单层多晶硅存储器及其操作方法

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Also Published As

Publication number Publication date
US5837554A (en) 1998-11-17
DE69330564T2 (de) 2002-06-27
US5610421A (en) 1997-03-11
EP0658938B1 (de) 2001-08-08
EP0658938A1 (de) 1995-06-21
JP2744592B2 (ja) 1998-04-28
JPH07254687A (ja) 1995-10-03

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee