IT1201856B - Integrazione monolitica di transistori vdmos di poternza isolati ad alta prestazione e di transistori mos a canale p per alta tensione assieme a transistori csmo, npn, pnp e diodi a bassa perdita - Google Patents

Integrazione monolitica di transistori vdmos di poternza isolati ad alta prestazione e di transistori mos a canale p per alta tensione assieme a transistori csmo, npn, pnp e diodi a bassa perdita

Info

Publication number
IT1201856B
IT1201856B IT83657/86A IT8365786A IT1201856B IT 1201856 B IT1201856 B IT 1201856B IT 83657/86 A IT83657/86 A IT 83657/86A IT 8365786 A IT8365786 A IT 8365786A IT 1201856 B IT1201856 B IT 1201856B
Authority
IT
Italy
Prior art keywords
transistors
csmo
npn
voltage
channel mos
Prior art date
Application number
IT83657/86A
Other languages
English (en)
Other versions
IT8683657A0 (it
Inventor
Claudio Contiero
Paola Galbiati
Antonio Andreini
Original Assignee
Microelettronica Spa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Microelettronica Spa filed Critical Microelettronica Spa
Priority to IT83657/86A priority Critical patent/IT1201856B/it
Publication of IT8683657A0 publication Critical patent/IT8683657A0/it
Priority to EP87830379A priority patent/EP0267882A1/en
Priority to KR870012601A priority patent/KR880006787A/ko
Priority to JP62284097A priority patent/JPS63296367A/ja
Application granted granted Critical
Publication of IT1201856B publication Critical patent/IT1201856B/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8248—Combination of bipolar and field-effect technology
    • H01L21/8249—Bipolar and MOS technology
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
    • H01L27/0623—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H01L27/0922—Combination of complementary transistors having a different structure, e.g. stacked CMOS, high-voltage and low-voltage CMOS
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7809—Vertical DMOS transistors, i.e. VDMOS transistors having both source and drain contacts on the same surface, i.e. Up-Drain VDMOS transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
IT83657/86A 1986-11-10 1986-11-10 Integrazione monolitica di transistori vdmos di poternza isolati ad alta prestazione e di transistori mos a canale p per alta tensione assieme a transistori csmo, npn, pnp e diodi a bassa perdita IT1201856B (it)

Priority Applications (4)

Application Number Priority Date Filing Date Title
IT83657/86A IT1201856B (it) 1986-11-10 1986-11-10 Integrazione monolitica di transistori vdmos di poternza isolati ad alta prestazione e di transistori mos a canale p per alta tensione assieme a transistori csmo, npn, pnp e diodi a bassa perdita
EP87830379A EP0267882A1 (en) 1986-11-10 1987-10-27 Monolithic integration of isolated, high performance, power vdmos transistors and of high voltage p-channel mos transistors together with cmos, npn, pnp transistors and low leakage diodes
KR870012601A KR880006787A (ko) 1986-11-10 1987-11-07 모놀리식 집적회로
JP62284097A JPS63296367A (ja) 1986-11-10 1987-11-10 分離された高性能パワーｖｄｍｏｓトランジスター及び高電圧ｐ−チャンネルｍｏｓトランジスターとをｃｍｏｓ、ｎｐｎ、ｐｎｐトランジスター及び漏れの小さいダイオードとともにモノリチックに集積させた構造

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT83657/86A IT1201856B (it) 1986-11-10 1986-11-10 Integrazione monolitica di transistori vdmos di poternza isolati ad alta prestazione e di transistori mos a canale p per alta tensione assieme a transistori csmo, npn, pnp e diodi a bassa perdita

Publications (2)

Publication Number Publication Date
IT8683657A0 IT8683657A0 (it) 1986-11-10
IT1201856B true IT1201856B (it) 1989-02-02

Family

ID=11323688

Family Applications (1)

Application Number Title Priority Date Filing Date
IT83657/86A IT1201856B (it) 1986-11-10 1986-11-10 Integrazione monolitica di transistori vdmos di poternza isolati ad alta prestazione e di transistori mos a canale p per alta tensione assieme a transistori csmo, npn, pnp e diodi a bassa perdita

Country Status (4)

Country Link
EP (1) EP0267882A1 (it)
JP (1) JPS63296367A (it)
KR (1) KR880006787A (it)
IT (1) IT1201856B (it)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03296260A (ja) * 1990-04-16 1991-12-26 Toshiba Corp Ｍｏｓ型半導体装置
US5296409A (en) * 1992-05-08 1994-03-22 National Semiconductor Corporation Method of making n-channel and p-channel junction field-effect transistors and CMOS transistors using a CMOS or bipolar/CMOS process
DE69330564T2 (de) * 1993-12-15 2002-06-27 Stmicroelectronics S.R.L., Agrate Brianza Integrierte Schaltung die eine EEPROM-Zelle und einen MOS-Transistor enthält
DE10001868B4 (de) * 2000-01-18 2006-03-16 Infineon Technologies Ag Avalanchefester Randabschluß für ein planares Halbleiterleistungsbauelement
US6849491B2 (en) 2001-09-28 2005-02-01 Dalsa Semiconductor Inc. Method of making high-voltage bipolar/CMOS/DMOS (BCD) devices
CN101976680B (zh) * 2010-09-16 2012-11-28 中国电子科技集团公司第二十四研究所 增加集成电路器件集成密度的半导体制造方法
CN109524395B (zh) * 2017-09-19 2020-09-11 世界先进积体电路股份有限公司 半导体装置及其制造方法
CN110648921B (zh) * 2019-10-08 2023-01-24 北京锐达芯集成电路设计有限责任公司 一种n沟道耗尽型vdmos器件及其制作方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3581797D1 (de) * 1984-12-27 1991-03-28 Toshiba Kawasaki Kk Misfet mit niedrigdotiertem drain und verfahren zu seiner herstellung.

Also Published As

Publication number Publication date
IT8683657A0 (it) 1986-11-10
EP0267882A1 (en) 1988-05-18
JPS63296367A (ja) 1988-12-02
KR880006787A (ko) 1988-07-25

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Effective date: 19971129