IT8619231A0 - Transistori bipolari a giunzione, procedimento per la fabbricazione transistori cmos e dmosdi dispositivi monolitici a complementari e diodi a bassa semiconduttore contenenti perdita. - Google Patents

Transistori bipolari a giunzione, procedimento per la fabbricazione transistori cmos e dmosdi dispositivi monolitici a complementari e diodi a bassa semiconduttore contenenti perdita.

Info

Publication number
IT8619231A0
IT8619231A0 IT8619231A IT1923186A IT8619231A0 IT 8619231 A0 IT8619231 A0 IT 8619231A0 IT 8619231 A IT8619231 A IT 8619231A IT 1923186 A IT1923186 A IT 1923186A IT 8619231 A0 IT8619231 A0 IT 8619231A0
Authority
IT
Italy
Prior art keywords
transistors
procedure
low
bipolar junction
semiconductor diodes
Prior art date
Application number
IT8619231A
Other languages
English (en)
Other versions
IT1188609B (it
Inventor
Franco Bertotti
Carlo Cini
Claudio Contiero
Paola Galbiati
Original Assignee
Sgs Microelettronica Spa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sgs Microelettronica Spa filed Critical Sgs Microelettronica Spa
Priority to IT19231/86A priority Critical patent/IT1188609B/it
Publication of IT8619231A0 publication Critical patent/IT8619231A0/it
Priority to GB8701769A priority patent/GB2186117B/en
Priority to FR878701076A priority patent/FR2593640B1/fr
Priority to SE8700351A priority patent/SE502803C2/sv
Priority to DE3702810A priority patent/DE3702810C2/de
Priority to JP2035387A priority patent/JPS62247558A/ja
Priority to NL8700242A priority patent/NL193918C/nl
Application granted granted Critical
Publication of IT1188609B publication Critical patent/IT1188609B/it
Priority to US07/276,890 priority patent/US4887142A/en

Links

IT19231/86A 1986-01-30 1986-01-30 Procedimento per la fabbricazione di dispositivi monolitici a semiconduttore contenenti transistori bipolari a giunzione,transistori cmos e dmos complementari e diodi a bassa perdita IT1188609B (it)

Priority Applications (8)

Application Number Priority Date Filing Date Title
IT19231/86A IT1188609B (it) 1986-01-30 1986-01-30 Procedimento per la fabbricazione di dispositivi monolitici a semiconduttore contenenti transistori bipolari a giunzione,transistori cmos e dmos complementari e diodi a bassa perdita
GB8701769A GB2186117B (en) 1986-01-30 1987-01-27 Monolithically integrated semiconductor device containing bipolar junction,cmosand dmos transistors and low leakage diodes and a method for its fabrication
FR878701076A FR2593640B1 (fr) 1986-01-30 1987-01-29 Dispositif semi-conducteur monolithique integre comportant des transistors a jonction bipolaire, des transistors cmos et dmos, des diodes a faible fuite et procede pour sa fabrication
SE8700351A SE502803C2 (sv) 1986-01-30 1987-01-29 Integrerad halvledarkrets innefattande CMOS- och DMOS- transistorer, bipolära skikttransistorer samt diod med lågt läckage.
DE3702810A DE3702810C2 (de) 1986-01-30 1987-01-30 Verfahren zur Herstellung einer Halbleitervorrichtung, die aus CMOS-Transistoren, vertikalen Bipolartransistoren und Dioden besteht
JP2035387A JPS62247558A (ja) 1986-01-30 1987-01-30 バイポ−ラ−接合トランジスタ−、ｃｍｏｓ及びｄｍｏｓトランジスタ−及び漏れの小さいダイオ−ドを含有するモノリチツクに集積された半導体デバイス、及びその製造方法
NL8700242A NL193918C (nl) 1986-01-30 1987-01-30 Werkwijze voor het vervaardigen van een halfgeleiderinrichting bestaande uit CMOS-transistoren, bipolaire verticale transistoren en dioden.
US07/276,890 US4887142A (en) 1986-01-30 1988-11-28 Monolithically integrated semiconductor device containing bipolar junction transistors, CMOS and DMOS transistors and low leakage diodes and a method for its fabrication

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT19231/86A IT1188609B (it) 1986-01-30 1986-01-30 Procedimento per la fabbricazione di dispositivi monolitici a semiconduttore contenenti transistori bipolari a giunzione,transistori cmos e dmos complementari e diodi a bassa perdita

Publications (2)

Publication Number Publication Date
IT8619231A0 true IT8619231A0 (it) 1986-01-30
IT1188609B IT1188609B (it) 1988-01-20

Family

ID=11155973

Family Applications (1)

Application Number Title Priority Date Filing Date
IT19231/86A IT1188609B (it) 1986-01-30 1986-01-30 Procedimento per la fabbricazione di dispositivi monolitici a semiconduttore contenenti transistori bipolari a giunzione,transistori cmos e dmos complementari e diodi a bassa perdita

Country Status (2)

Country Link
JP (1) JPS62247558A (it)
IT (1) IT1188609B (it)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2721155B2 (ja) * 1987-02-19 1998-03-04 株式会社東芝 半導体装置
JPH02125462A (ja) * 1988-11-04 1990-05-14 Fuji Electric Co Ltd 半導体集積回路装置及びその製造方法
US5374569A (en) * 1992-09-21 1994-12-20 Siliconix Incorporated Method for forming a BiCDMOS

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4325180A (en) * 1979-02-15 1982-04-20 Texas Instruments Incorporated Process for monolithic integration of logic, control, and high voltage interface circuitry
JPS5944782B2 (ja) * 1980-01-31 1984-11-01 日本電信電話株式会社 半導体集積回路
JPS6072255A (ja) * 1983-09-28 1985-04-24 Toshiba Corp 半導体集積回路装置およびその製造方法
JPS60249366A (ja) * 1984-05-25 1985-12-10 Hitachi Ltd 半導体装置

Also Published As

Publication number Publication date
IT1188609B (it) 1988-01-20
JPS62247558A (ja) 1987-10-28

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