JPS62247558A - バイポ−ラ−接合トランジスタ−、ｃｍｏｓ及びｄｍｏｓトランジスタ−及び漏れの小さいダイオ−ドを含有するモノリチツクに集積された半導体デバイス、及びその製造方法 - Google Patents
バイポ−ラ−接合トランジスタ−、ｃｍｏｓ及びｄｍｏｓトランジスタ−及び漏れの小さいダイオ−ドを含有するモノリチツクに集積された半導体デバイス、及びその製造方法Info
- Publication number
- JPS62247558A JPS62247558A JP2035387A JP2035387A JPS62247558A JP S62247558 A JPS62247558 A JP S62247558A JP 2035387 A JP2035387 A JP 2035387A JP 2035387 A JP2035387 A JP 2035387A JP S62247558 A JPS62247558 A JP S62247558A
- Authority
- JP
- Japan
- Prior art keywords
- silicon
- transistor
- region
- transistors
- dmos
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 13
- 229910052710 silicon Inorganic materials 0.000 claims description 32
- 239000010703 silicon Substances 0.000 claims description 32
- 238000009792 diffusion process Methods 0.000 claims description 29
- 238000000034 method Methods 0.000 claims description 28
- 230000000873 masking effect Effects 0.000 claims description 24
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 20
- 238000004519 manufacturing process Methods 0.000 claims description 18
- 239000000758 substrate Substances 0.000 claims description 17
- 229910052796 boron Inorganic materials 0.000 claims description 13
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 13
- 239000012535 impurity Substances 0.000 claims description 11
- 239000000463 material Substances 0.000 claims description 11
- 229910052698 phosphorus Inorganic materials 0.000 claims description 11
- 239000011574 phosphorus Substances 0.000 claims description 11
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 9
- 238000002955 isolation Methods 0.000 claims description 8
- -1 phosphorus ions Chemical class 0.000 claims description 7
- 238000000151 deposition Methods 0.000 claims description 5
- 150000004767 nitrides Chemical class 0.000 claims description 5
- 239000007787 solid Substances 0.000 claims description 5
- 229910052785 arsenic Inorganic materials 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 239000010410 layer Substances 0.000 claims 18
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims 2
- 238000005553 drilling Methods 0.000 claims 1
- 238000005121 nitriding Methods 0.000 claims 1
- 239000002344 surface layer Substances 0.000 claims 1
- 238000002513 implantation Methods 0.000 description 10
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 9
- 230000015572 biosynthetic process Effects 0.000 description 9
- 239000013078 crystal Substances 0.000 description 9
- 239000003990 capacitor Substances 0.000 description 8
- 229910052814 silicon oxide Inorganic materials 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 238000010438 heat treatment Methods 0.000 description 7
- 239000002019 doping agent Substances 0.000 description 6
- 230000010354 integration Effects 0.000 description 5
- 229920002120 photoresistant polymer Polymers 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 230000000295 complement effect Effects 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 3
- 230000008021 deposition Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 239000007943 implant Substances 0.000 description 2
- 230000001939 inductive effect Effects 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 239000007858 starting material Substances 0.000 description 2
- 239000012808 vapor phase Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 101001034843 Mus musculus Interferon-induced transmembrane protein 1 Proteins 0.000 description 1
- 229910000676 Si alloy Inorganic materials 0.000 description 1
- 241001051525 Tortus Species 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical group [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910001439 antimony ion Inorganic materials 0.000 description 1
- 239000002775 capsule Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 210000004709 eyebrow Anatomy 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 230000002787 reinforcement Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 230000005236 sound signal Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
- 238000009966 trimming Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Landscapes
- Bipolar Transistors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| IT20779B/86 | 1986-01-30 | ||
| IT19231A/86 | 1986-01-30 | ||
| IT19231/86A IT1188609B (it) | 1986-01-30 | 1986-01-30 | Procedimento per la fabbricazione di dispositivi monolitici a semiconduttore contenenti transistori bipolari a giunzione,transistori cmos e dmos complementari e diodi a bassa perdita |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62247558A true JPS62247558A (ja) | 1987-10-28 |
Family
ID=11155973
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2035387A Pending JPS62247558A (ja) | 1986-01-30 | 1987-01-30 | バイポ−ラ−接合トランジスタ−、ｃｍｏｓ及びｄｍｏｓトランジスタ−及び漏れの小さいダイオ−ドを含有するモノリチツクに集積された半導体デバイス、及びその製造方法 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPS62247558A (it) |
| IT (1) | IT1188609B (it) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63202971A (ja) * | 1987-02-19 | 1988-08-22 | Toshiba Corp | 半導体装置 |
| JPH02125462A (ja) * | 1988-11-04 | 1990-05-14 | Fuji Electric Co Ltd | 半導体集積回路装置及びその製造方法 |
| JP2007335881A (ja) * | 1992-09-21 | 2007-12-27 | Siliconix Inc | ＢｉＣＤＭＯＳ構造及びその製造方法 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55146944A (en) * | 1979-02-15 | 1980-11-15 | Texas Instruments Inc | Method of fabricating monolithic integrated microelectronic semiconductor circuit |
| JPS56108255A (en) * | 1980-01-31 | 1981-08-27 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor integrated circuit |
| JPS6072255A (ja) * | 1983-09-28 | 1985-04-24 | Toshiba Corp | 半導体集積回路装置およびその製造方法 |
| JPS60249366A (ja) * | 1984-05-25 | 1985-12-10 | Hitachi Ltd | 半導体装置 |
-
1986
- 1986-01-30 IT IT19231/86A patent/IT1188609B/it active
-
1987
- 1987-01-30 JP JP2035387A patent/JPS62247558A/ja active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55146944A (en) * | 1979-02-15 | 1980-11-15 | Texas Instruments Inc | Method of fabricating monolithic integrated microelectronic semiconductor circuit |
| JPS56108255A (en) * | 1980-01-31 | 1981-08-27 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor integrated circuit |
| JPS6072255A (ja) * | 1983-09-28 | 1985-04-24 | Toshiba Corp | 半導体集積回路装置およびその製造方法 |
| JPS60249366A (ja) * | 1984-05-25 | 1985-12-10 | Hitachi Ltd | 半導体装置 |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63202971A (ja) * | 1987-02-19 | 1988-08-22 | Toshiba Corp | 半導体装置 |
| JPH02125462A (ja) * | 1988-11-04 | 1990-05-14 | Fuji Electric Co Ltd | 半導体集積回路装置及びその製造方法 |
| JP2007335881A (ja) * | 1992-09-21 | 2007-12-27 | Siliconix Inc | ＢｉＣＤＭＯＳ構造及びその製造方法 |
| JP2007335882A (ja) * | 1992-09-21 | 2007-12-27 | Siliconix Inc | ＢｉＣＤＭＯＳ構造及びその製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| IT1188609B (it) | 1988-01-20 |
| IT8619231A0 (it) | 1986-01-30 |
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