DE69329000D1 - Leiterrahmen einer Halbleiteranordnung mit Überchipanschlüssen - Google Patents

Leiterrahmen einer Halbleiteranordnung mit Überchipanschlüssen

Info

Publication number
DE69329000D1
DE69329000D1 DE69329000T DE69329000T DE69329000D1 DE 69329000 D1 DE69329000 D1 DE 69329000D1 DE 69329000 T DE69329000 T DE 69329000T DE 69329000 T DE69329000 T DE 69329000T DE 69329000 D1 DE69329000 D1 DE 69329000D1
Authority
DE
Germany
Prior art keywords
overchip
connections
semiconductor device
lead frame
lead
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69329000T
Other languages
German (de)
English (en)
Inventor
Boon C Teo
Tjandra Nmi Karta
Siu W Low
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Application granted granted Critical
Publication of DE69329000D1 publication Critical patent/DE69329000D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/411—Chip-supporting parts, e.g. die pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/421—Shapes or dispositions
    • H10W70/424—Cross-sectional shapes
    • H10W70/427—Bent parts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/411—Chip-supporting parts, e.g. die pads
    • H10W70/415—Leadframe inner leads serving as die pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/421—Shapes or dispositions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/421—Shapes or dispositions
    • H10W70/442—Shapes or dispositions of multiple leadframes in a single chip
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/451—Multilayered leadframes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/811—Multiple chips on leadframes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/931—Shapes of bond pads
    • H10W72/932—Plan-view shape, i.e. in top view
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink
DE69329000T 1992-09-30 1993-09-30 Leiterrahmen einer Halbleiteranordnung mit Überchipanschlüssen Expired - Lifetime DE69329000D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/954,183 US5331200A (en) 1992-09-30 1992-09-30 Lead-on-chip inner lead bonding lead frame method and apparatus

Publications (1)

Publication Number Publication Date
DE69329000D1 true DE69329000D1 (de) 2000-08-17

Family

ID=25495054

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69329000T Expired - Lifetime DE69329000D1 (de) 1992-09-30 1993-09-30 Leiterrahmen einer Halbleiteranordnung mit Überchipanschlüssen

Country Status (7)

Country Link
US (1) US5331200A (enExample)
EP (1) EP0590986B1 (enExample)
JP (1) JPH06283567A (enExample)
KR (1) KR100328906B1 (enExample)
DE (1) DE69329000D1 (enExample)
SG (1) SG44609A1 (enExample)
TW (1) TW239901B (enExample)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2732767B2 (ja) * 1992-12-22 1998-03-30 株式会社東芝 樹脂封止型半導体装置
US5729049A (en) * 1996-03-19 1998-03-17 Micron Technology, Inc. Tape under frame for conventional-type IC package assembly
US6078502A (en) * 1996-04-01 2000-06-20 Lsi Logic Corporation System having heat dissipating leadframes
US5717246A (en) 1996-07-29 1998-02-10 Micron Technology, Inc. Hybrid frame with lead-lock tape
US5907184A (en) 1998-03-25 1999-05-25 Micron Technology, Inc. Integrated circuit package electrical enhancement
US5763945A (en) * 1996-09-13 1998-06-09 Micron Technology, Inc. Integrated circuit package electrical enhancement with improved lead frame design
US5817540A (en) * 1996-09-20 1998-10-06 Micron Technology, Inc. Method of fabricating flip-chip on leads devices and resulting assemblies
US6068174A (en) 1996-12-13 2000-05-30 Micro)N Technology, Inc. Device and method for clamping and wire-bonding the leads of a lead frame one set at a time
US6462404B1 (en) 1997-02-28 2002-10-08 Micron Technology, Inc. Multilevel leadframe for a packaged integrated circuit
US6008996A (en) * 1997-04-07 1999-12-28 Micron Technology, Inc. Interdigitated leads-over-chip lead frame, device, and method for supporting an integrated circuit die
US6271582B1 (en) * 1997-04-07 2001-08-07 Micron Technology, Inc. Interdigitated leads-over-chip lead frame, device, and method for supporting an integrated circuit die
US6580157B2 (en) 1997-06-10 2003-06-17 Micron Technology, Inc. Assembly and method for modified bus bar with Kapton™ tape or insulative material in LOC packaged part
US5780923A (en) 1997-06-10 1998-07-14 Micron Technology, Inc. Modified bus bar with Kapton™ tape or insulative material on LOC packaged part
SG73480A1 (en) * 1997-11-06 2000-06-20 Texas Instr Singapore Pte Ltd High density integrated circuit package
US6144089A (en) 1997-11-26 2000-11-07 Micron Technology, Inc. Inner-digitized bond fingers on bus bars of semiconductor device package
JPH11251006A (ja) * 1997-12-19 1999-09-17 Osram Sylvania Inc リードフレーム、リードフレームアセンブリ及び関連方法
SG79963A1 (en) * 1998-03-28 2001-04-17 Texas Instr Singapore Pte Ltd Semiconductor device testing and burn-in methodology
US6124150A (en) 1998-08-20 2000-09-26 Micron Technology, Inc. Transverse hybrid LOC package
US6052289A (en) * 1998-08-26 2000-04-18 Micron Technology, Inc. Interdigitated leads-over-chip lead frame for supporting an integrated circuit die
KR100408391B1 (ko) * 2000-06-09 2003-12-06 삼성전자주식회사 전원 배선을 개선한 볼그리드 어레이 패키지 반도체 장치
US7154186B2 (en) * 2004-03-18 2006-12-26 Fairchild Semiconductor Corporation Multi-flip chip on lead frame on over molded IC package and method of assembly
TWI447878B (zh) * 2009-08-28 2014-08-01 杰群科技有限公司 增加通路及降低電阻之電晶體連接結構
US9263370B2 (en) * 2013-09-27 2016-02-16 Qualcomm Mems Technologies, Inc. Semiconductor device with via bar
US9570381B2 (en) * 2015-04-02 2017-02-14 Advanced Semiconductor Engineering, Inc. Semiconductor packages and related manufacturing methods

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57114261A (en) * 1981-01-07 1982-07-16 Hitachi Ltd Lead frame structure
US4754317A (en) * 1986-04-28 1988-06-28 Monolithic Memories, Inc. Integrated circuit die-to-lead frame interconnection assembly and method
US4801999A (en) * 1987-07-15 1989-01-31 Advanced Micro Devices, Inc. Integrated circuit lead frame assembly containing voltage bussing and distribution to an integrated circuit die using tape automated bonding with two metal layers
US5068712A (en) * 1988-09-20 1991-11-26 Hitachi, Ltd. Semiconductor device
US5227661A (en) * 1990-09-24 1993-07-13 Texas Instruments Incorporated Integrated circuit device having an aminopropyltriethoxysilane coating
US5206536A (en) * 1991-01-23 1993-04-27 Texas Instruments, Incorporated Comb insert for semiconductor packaged devices
KR940006164B1 (ko) * 1991-05-11 1994-07-08 금성일렉트론 주식회사 반도체 패키지 및 그 제조방법
JPH05114685A (ja) * 1991-10-23 1993-05-07 Mitsubishi Electric Corp 半導体装置
KR940008066A (ko) * 1992-09-18 1994-04-28 윌리엄 이. 힐러 집적 회로용 다중층 리드 프레임 어셈블리 및 방법

Also Published As

Publication number Publication date
KR100328906B1 (ko) 2002-07-08
JPH06283567A (ja) 1994-10-07
EP0590986B1 (en) 2000-07-12
EP0590986A1 (en) 1994-04-06
TW239901B (enExample) 1995-02-01
US5331200A (en) 1994-07-19
KR940008057A (ko) 1994-04-28
SG44609A1 (en) 1997-12-19

Similar Documents

Publication Publication Date Title
DE69329000D1 (de) Leiterrahmen einer Halbleiteranordnung mit Überchipanschlüssen
DE69321266D1 (de) Halbleiteranordnung mit Überchipanschlüssen
DE69332329D1 (de) Halbleiteranordnung
DE68927285D1 (de) Halbleiteranordnung mit Leiterrahmen
DE69318239D1 (de) Halbleiterbauelement mit planarer Grenzfläche
DE69332960D1 (de) Halbleiteranordnung
DE69231039D1 (de) Halbleiteranordnungzusammenbau
DE69328743D1 (de) Halbleiteranordnung
DE69334253D1 (de) Halbleitervorrichtung
DE69325951D1 (de) Halbleitervorrichtung
DE69309817D1 (de) Herstellungsverfahren einer lichtemittierenden Halbleitervorrichtung
DE68927026D1 (de) Herstellungsverfahren einer Halbleitervorrichtung
DE69029752D1 (de) Einkapselung einer Halbleiteranordnung
DE69129619D1 (de) Halbleitervorrichtung mit einer vielzahl von anschlussstiften
DE69326262D1 (de) Verbindungshalbleiterbauelemente
DE69317940D1 (de) Halbleiterbauelement mit Kondensator
DE69312799D1 (de) Optoelektronische Halbleiteranordnung
DE69118750D1 (de) Halbleiteranordnung mit einer Wärmesenke
KR950701143A (ko) 더블 게이트를 갖는 반도체소자(semiconductor devices with a double gate)
DE69126714D1 (de) Teile einer Halbleitervorrichtung
DE69328090D1 (de) Sammelstück einer melkvorrichtung
DE69313499D1 (de) Halbleiterbauelement mit Bufferstruktur
DE69223017D1 (de) Verbindungshalbleiterbauelement
DE69333792D1 (de) Halbleiteranordnung
DE69325181D1 (de) Halbleitervorrichtung

Legal Events

Date Code Title Description
8332 No legal effect for de