DE69322755D1 - Halbleiteranordnung, Herstellungsverfahren und Verfahren zur Montage der Halbleiteranordnung - Google Patents

Halbleiteranordnung, Herstellungsverfahren und Verfahren zur Montage der Halbleiteranordnung

Info

Publication number
DE69322755D1
DE69322755D1 DE69322755T DE69322755T DE69322755D1 DE 69322755 D1 DE69322755 D1 DE 69322755D1 DE 69322755 T DE69322755 T DE 69322755T DE 69322755 T DE69322755 T DE 69322755T DE 69322755 D1 DE69322755 D1 DE 69322755D1
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DE
Germany
Prior art keywords
semiconductor arrangement
assembling
production method
semiconductor
arrangement
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69322755T
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English (en)
Other versions
DE69322755T2 (de
Inventor
Katsuya Kosaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of DE69322755D1 publication Critical patent/DE69322755D1/de
Application granted granted Critical
Publication of DE69322755T2 publication Critical patent/DE69322755T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
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    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Dicing (AREA)
  • Die Bonding (AREA)
  • Junction Field-Effect Transistors (AREA)
DE69322755T 1993-01-12 1993-06-24 Halbleiteranordnung, Herstellungsverfahren und Verfahren zur Montage der Halbleiteranordnung Expired - Fee Related DE69322755T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5003034A JPH06209058A (ja) 1993-01-12 1993-01-12 半導体装置及びその製造方法，並びにその実装方法

Publications (2)

Publication Number Publication Date
DE69322755D1 true DE69322755D1 (de) 1999-02-04
DE69322755T2 DE69322755T2 (de) 1999-05-20

Family

ID=11546036

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69322755T Expired - Fee Related DE69322755T2 (de) 1993-01-12 1993-06-24 Halbleiteranordnung, Herstellungsverfahren und Verfahren zur Montage der Halbleiteranordnung

Country Status (4)

Country Link
US (2) US5338967A (de)
EP (2) EP0817254A3 (de)
JP (1) JPH06209058A (de)
DE (1) DE69322755T2 (de)

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0215652A (ja) * 1988-07-01 1990-01-19 Mitsubishi Electric Corp 半導体装置及びその製造方法
JPH06310547A (ja) * 1993-02-25 1994-11-04 Mitsubishi Electric Corp 半導体装置及びその製造方法
JP3293930B2 (ja) * 1993-03-01 2002-06-17 ローム株式会社 半導体ダイシング方法
JP2625368B2 (ja) * 1993-12-16 1997-07-02 日本電気株式会社 半導体基板
JPH08279562A (ja) * 1994-07-20 1996-10-22 Mitsubishi Electric Corp 半導体装置、及びその製造方法
JPH0878437A (ja) * 1994-09-08 1996-03-22 Mitsubishi Electric Corp 半導体装置の製造方法，及び半導体装置
JP3374880B2 (ja) * 1994-10-26 2003-02-10 三菱電機株式会社 半導体装置の製造方法、及び半導体装置
US5543365A (en) * 1994-12-02 1996-08-06 Texas Instruments Incorporated Wafer scribe technique using laser by forming polysilicon
JP3520161B2 (ja) * 1996-09-02 2004-04-19 三菱電機株式会社 半導体装置，及びその製造方法
US5900675A (en) * 1997-04-21 1999-05-04 International Business Machines Corporation Organic controlled collapse chip connector (C4) ball grid array (BGA) chip carrier with dual thermal expansion rates
JP3810204B2 (ja) * 1998-03-19 2006-08-16 三菱電機株式会社 半導体装置の製造方法および半導体装置
JP3501959B2 (ja) * 1998-09-29 2004-03-02 三菱電機株式会社 レーザー溶断方式半導体装置の製造方法および半導体装置
JP4438133B2 (ja) 1999-08-19 2010-03-24 シャープ株式会社 ヘテロ接合型バイポーラトランジスタおよびその製造方法
US7211877B1 (en) 1999-09-13 2007-05-01 Vishay-Siliconix Chip scale surface mount package for semiconductor device and process of fabricating the same
KR100462980B1 (ko) 1999-09-13 2004-12-23 비쉐이 메저먼츠 그룹, 인코포레이티드 반도체장치용 칩 스케일 표면 장착 패키지 및 그 제조공정
US6498387B1 (en) * 2000-02-15 2002-12-24 Wen-Ken Yang Wafer level package and the process of the same
JP2002033296A (ja) * 2000-04-26 2002-01-31 Lintec Corp シリコンウエハ用の補強材および該補強材を用いたｉｃチップの製造方法
DE60030963D1 (de) * 2000-06-06 2006-11-09 St Microelectronics Srl Elektronischer Halbleiterbaustein mit Wärmeverteiler
US6586279B1 (en) * 2000-11-17 2003-07-01 Sun Microsystems, Inc. Method of integrating a heat spreader and a semiconductor, and package formed thereby
US6710443B1 (en) * 2002-12-20 2004-03-23 Texas Instruments Incorporated Integrated circuit providing thermally conductive structures substantially horizontally coupled to one another within one or more heat dissipation layers to dissipate heat from a heat generating structure
US7031163B2 (en) * 2002-12-30 2006-04-18 Texas Instruments Incorporated Mechanical cooling fin for interconnects
JP3831846B2 (ja) * 2003-06-09 2006-10-11 富士電機デバイステクノロジー株式会社 半導体装置の製造方法
JP4026573B2 (ja) * 2003-09-24 2007-12-26 株式会社デンソー 電子装置を収納するパッケージの製造方法
US7868472B2 (en) * 2004-04-08 2011-01-11 Avago Technologies General Ip (Singapore) Pte. Ltd. Thermal dissipation in integrated circuit systems
US8188596B2 (en) 2007-02-09 2012-05-29 Infineon Technologies Ag Multi-chip module
US8226796B2 (en) * 2009-01-14 2012-07-24 Asm Assembly Automation Ltd Flanged collet for die pick-up tool
US8404562B2 (en) 2010-09-30 2013-03-26 Infineon Technologies Ag Method for manufacturing a composite wafer having a graphite core, and composite wafer having a graphite core
US8822306B2 (en) 2010-09-30 2014-09-02 Infineon Technologies Ag Method for manufacturing a composite wafer having a graphite core, and composite wafer having a graphite core
JP2012119637A (ja) * 2010-12-03 2012-06-21 Sumitomo Electric Device Innovations Inc 光半導体装置の製造方法
KR101954631B1 (ko) * 2014-05-27 2019-03-06 가부시키가이샤 무라타 세이사쿠쇼 마더 세라믹 기판, 세라믹 기판, 마더 모듈 부품, 모듈 부품 및 마더 세라믹 기판의 제조 방법
JP2017054861A (ja) * 2015-09-07 2017-03-16 株式会社東芝 半導体装置の製造方法
DE102017117668B3 (de) 2017-08-03 2018-09-27 Semikron Elektronik Gmbh & Co. Kg Leistungselektronische Anordnung mit einer Haftschicht sowie Verfahren zur Herstellung dieser Anordnung
JP2020161550A (ja) * 2019-03-25 2020-10-01 トヨタ自動車株式会社 半導体装置とその製造方法
RU2737722C1 (ru) * 2020-04-03 2020-12-02 Акционерное общество "ГРУППА КРЕМНИЙ ЭЛ" Способ изготовления полупроводникового прибора

Family Cites Families (45)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3665590A (en) * 1970-01-19 1972-05-30 Ncr Co Semiconductor flip-chip soldering method
US3770518A (en) * 1971-01-28 1973-11-06 Varian Associates Method of making gallium arsenide semiconductive devices
US3940295A (en) * 1971-11-15 1976-02-24 The International Nickel Company, Inc. Low expansion alloys
US4040169A (en) * 1974-03-04 1977-08-09 Watkins-Johnson Co. Method of fabricating an array of semiconductor devices
JPS5451382A (en) * 1977-09-29 1979-04-23 Nec Corp Die bonding method of semiconductor device
US4220506A (en) * 1978-12-11 1980-09-02 Bell Telephone Laboratories, Incorporated Process for plating solder
JPS55115986A (en) * 1979-02-28 1980-09-06 Seiko Epson Corp Suppressing method for oxidation of tin in gold-tin alloy electroplating
JPS55124239A (en) * 1979-03-19 1980-09-25 Matsushita Electric Ind Co Ltd Method of fabricating semiconductor device
JPS56157082A (en) * 1980-05-09 1981-12-04 Hitachi Ltd Semiconductor laser device and manufacture
US4376287A (en) * 1980-10-29 1983-03-08 Rca Corporation Microwave power circuit with an active device mounted on a heat dissipating substrate
JPS57202746A (en) * 1981-06-09 1982-12-11 Toshiba Corp Manufacture of semiconductor device
US4400813A (en) * 1981-07-20 1983-08-23 Bell Telephone Laboratories, Incorporated Crenelated-ridge waveguide laser
JPS5827327A (ja) * 1981-08-11 1983-02-18 Toshiba Corp ダイボンデイング方法
US4444352A (en) * 1981-09-17 1984-04-24 General Electric Company Method of thermo-compression diffusion bonding together metal surfaces
US4457976A (en) * 1983-03-28 1984-07-03 Rca Corporation Method for mounting a sapphire chip on a metal base and article produced thereby
JPS60160623A (ja) * 1984-01-31 1985-08-22 Fujitsu Ltd 半導体装置の製造方法および製造装置
JPS60169144A (ja) * 1984-02-13 1985-09-02 Mitsubishi Electric Corp 半導体素子のダイボンド方法
JPS6123350A (ja) * 1984-07-12 1986-01-31 Nec Corp 半導体装置
US4577398A (en) * 1984-09-07 1986-03-25 Trilogy Computer Development Partners, Ltd. Method for mounting a semiconductor chip
JPS6177369A (ja) * 1984-09-25 1986-04-19 Toshiba Corp 半導体装置の製造方法
JPS61113247A (ja) * 1984-11-07 1986-05-31 Nec Kansai Ltd 半導体装置の製造方法
US4706870A (en) * 1984-12-18 1987-11-17 Motorola Inc. Controlled chemical reduction of surface film
JPH0626222B2 (ja) * 1985-04-26 1994-04-06 ロ−ム株式会社 半導体チツプのダイボンデイング方法
US4632295A (en) * 1985-08-12 1986-12-30 International Business Machines Corporation Reduction atmosphere workpiece joining
US4646958A (en) * 1985-10-31 1987-03-03 International Business Machines Corp. Fluxless soldering process using a silane atmosphere
US4866505A (en) * 1986-03-19 1989-09-12 Analog Devices, Inc. Aluminum-backed wafer and chip
JPS63299348A (ja) * 1987-05-29 1988-12-06 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
JPS6431444A (en) * 1987-07-28 1989-02-01 Hitachi Cable Porcelain substrate for surface mounting
JPS6471136A (en) * 1987-09-10 1989-03-16 Mitsubishi Electric Corp Semiconductor device
JPH01257355A (ja) * 1987-12-14 1989-10-13 Mitsubishi Electric Corp マイクロ波モノリシックｉｃ
US4897508A (en) * 1988-02-10 1990-01-30 Olin Corporation Metal electronic package
JPH02271558A (ja) * 1989-04-12 1990-11-06 Mitsubishi Electric Corp 半導体装置及びその製造方法
US5188280A (en) * 1989-04-28 1993-02-23 Hitachi Ltd. Method of bonding metals, and method and apparatus for producing semiconductor integrated circuit device using said method of bonding metals
US5015803A (en) * 1989-05-31 1991-05-14 Olin Corporation Thermal performance package for integrated circuit chip
US4984731A (en) * 1989-10-05 1991-01-15 Matsushita Electric Industrial Co., Ltd. Method of packaging electronic component parts using a eutectic die bonder
JP2738070B2 (ja) * 1989-10-20 1998-04-08 松下電器産業株式会社 ダイボンディング方法
US5027189A (en) * 1990-01-10 1991-06-25 Hughes Aircraft Company Integrated circuit solder die-attach design and method
JP2606940B2 (ja) * 1990-02-07 1997-05-07 三菱電機株式会社 半導体装置およびその製造方法
US5121871A (en) * 1990-04-20 1992-06-16 The United States Of America As Represented By The United States Department Of Energy Solder extrusion pressure bonding process and bonded products produced thereby
JP2505065B2 (ja) * 1990-10-04 1996-06-05 三菱電機株式会社 半導体装置およびその製造方法
JP2608658B2 (ja) * 1990-11-27 1997-05-07 三菱電機株式会社 半導体装置およびその製造方法
JPH04326739A (ja) * 1991-04-26 1992-11-16 Mitsubishi Electric Corp ダイボンド方法およびダイボンド装置
US5156998A (en) * 1991-09-30 1992-10-20 Hughes Aircraft Company Bonding of integrated circuit chip to carrier using gold/tin eutectic alloy and refractory metal barrier layer to block migration of tin through via holes
US5236117A (en) * 1992-06-22 1993-08-17 Staktek Corporation Impact solder method and apparatus
US5336928A (en) * 1992-09-18 1994-08-09 General Electric Company Hermetically sealed packaged electronic system

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EP0606522A2 (de) 1994-07-20
EP0817254A2 (de) 1998-01-07
US5770468A (en) 1998-06-23
US5338967A (en) 1994-08-16
EP0606522A3 (de) 1996-04-10
EP0817254A3 (de) 1998-01-21
JPH06209058A (ja) 1994-07-26
DE69322755T2 (de) 1999-05-20
EP0606522B1 (de) 1998-12-23

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