JPH0626222B2 - 半導体チツプのダイボンデイング方法 - Google Patents

半導体チツプのダイボンデイング方法

Info

Publication number
JPH0626222B2
JPH0626222B2 JP9167685A JP9167685A JPH0626222B2 JP H0626222 B2 JPH0626222 B2 JP H0626222B2 JP 9167685 A JP9167685 A JP 9167685A JP 9167685 A JP9167685 A JP 9167685A JP H0626222 B2 JPH0626222 B2 JP H0626222B2
Authority
JP
Japan
Prior art keywords
semiconductor chip
solder
lead frame
die
bubbles
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP9167685A
Other languages
English (en)
Other versions
JPS61251045A (ja
Inventor
泰之 樋口
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm Co Ltd
Original Assignee
Rohm Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm Co Ltd filed Critical Rohm Co Ltd
Priority to JP9167685A priority Critical patent/JPH0626222B2/ja
Publication of JPS61251045A publication Critical patent/JPS61251045A/ja
Publication of JPH0626222B2 publication Critical patent/JPH0626222B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/27—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/741—Apparatus for manufacturing means for bonding, e.g. connectors
    • H01L24/743—Apparatus for manufacturing layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/741—Apparatus for manufacturing means for bonding, e.g. connectors
    • H01L2224/743—Apparatus for manufacturing layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8312—Aligning
    • H01L2224/83136—Aligning involving guiding structures, e.g. spacers or supporting members
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H01L2224/83192—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06—Polymers
    • H01L2924/078—Adhesive characteristics other than chemical
    • H01L2924/07802—Adhesive characteristics other than chemical not being an ohmic electrical conductor

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Die Bonding (AREA)

Description

【発明の詳細な説明】 産業上の利用分野 この発明は、被ダイボンディング材に半導体チップを接
続固定する半導体チップのダイボンディング方法に係
り、特にプリフォーム材におけるボイドの発生率を最小
に抑えうる半導体チップのダイボンディングに関する。
従来の技術 一般に、この種ダイボンディング方法としてリフロー方
式およびダイアタッチ方式があり、いずれの場合におい
ても被ダイボンディング材としてリードフレーム等を作
業台上に水平に配置させてそれぞれ各方式による所定の
作業が行われる。
発明が解決しようとする問題点 例えばプリフォーム材としてハンダを用いるハンダ接続
法であれば、被ダイボンディング材としてのリードフレ
ームと半導体チップとの各熱膨張係数に対応してハンダ
を比較的厚くしておく必要があり、前記ハンダが厚けれ
ば厚い程その中に多数の気泡が含まれている。前記気泡
は上方向にぬけやすいという性質を持つため、上記従来
の方式では気泡のぬける方向に対して前記半導体チップ
のボンディング面が妨げとなって前記気泡を取り除きに
くくなる。従って、従来の如くダンボンディングされた
ものはプリフォーム材におけるボイドの発生率が増大す
る。その結果、半導体チップの熱放散の妨げや半導体チ
ップの特性劣化を生じ、製品としての強度および歩留り
が低下するという問題を招来することとなる。
この発明は係る事情に鑑みて創案されたもので、プリフ
ォーム材に含まれる気泡を有効に取り除き、プリフォー
ム材におけるボイドの発生率を最小に抑えようとする半
導体チップのダイボンディング方法を提供することを目
的としている。
問題点を解決するための手段および作用 このためこの発明は、被ダイボンディング材を所定角度
傾斜させた状態にし、リフロー方式或いはダイアタッチ
方式でもって、前記被ダイボンディング材と半導体チッ
プとをプリフォーム材で接続固定させるようにした。
実施例 以下、図面を参照してこの発明の一実施例を詳細に説明
する。但し、この実施例ではハダ接続法をダイアタッチ
で行う場合とする。
図において、被ダイボンディング材としてのリードフレ
ーム１は、例えばＣｕからなる熱膨張係数17×10-6程度
のものである。このリードフレーム１のダイボンディン
グ面には、プリフォーム材の垂れ防止用突片1aが形成さ
れている。前記プリフォーム材としてのハンダ２はＡｕ
−ＳｉやＳｎ−Ｐｂ等からなる。半導体チップ３は例え
ばＳｉ基板からなる熱膨張係数６×10-6程度のものであ
り、そのボンディング面にハンダ付け可能なＡｕ、Ｎｉ
等の被膜が形成されている。４はダイボンド用ツールを
示しており、半導体チップ３を吸着するものである。な
お、上記リードフレーム１に前記半導体チップ３をダイ
ボンディングする場合には、ハンダ２の厚みを10〜80μ
ｍ程度とする必要がある。
しかして、前記リードフレーム１は、水平線ａ−ａ′に
対して所定角度θ傾斜されており、リードフレーム１の
垂れ防止用突片1aはハンダ２の位置決めがなされる。即
ち、上記の如く傾斜させたリードフレーム１の垂れ防止
用突片1aの近辺にハンダ２を所定量滴下し、前記リード
フレーム１と平行な方向から、半導体チップ３を所定圧
力で押しつけることにより、リードフレーム１に半導体
チップ３を接続固定させている。この発明はハンダ２内
に含まれる気泡が上方向にぬけやすいという性質に基づ
いてなされているので、上記の如く実施例のようにすれ
ば、半導体チップ３の押圧時に前記半導体チップ３のボ
ンディング面に沿って矢印Ａ方向へとハンダ２内に含ま
れる多数の気泡が有効に取り除けることとなる。
なお、上記フレーム１の傾斜角度θは適宜に設定される
のが好ましく、例えば略直角に傾斜させてダイボンディ
ング作業を行うも可能である。
また、この発明は上記実施例に限定されず、例えば共通
合金法或いは導電性樹脂接着法にも適用されることは勿
論である。
発明の効果 以上述べたようにこの発明によれば、プリフォーム材に
含まれる気泡のぬける方向に対して半導体チップのボン
ディング面が妨げにならないから、前記気泡を有効に取
り除くことができる。従って、プリフォーム材における
ボイドの発生率が極めて少なくなるので、製品としての
強度および歩留りを従来と比較して大幅に向上させるこ
とができる。
【図面の簡単な説明】
第１図はこの発明の一実施例を説明するための説明図で
ある。 １……リードフレーム、２……ハンダ、３……半導体チ
ップ。

Claims (1)

    【特許請求の範囲】
  1. 【請求項１】所定角度傾斜させた被ダイボンディング材
    に半導体チップをプリフォーム材で接続固定させること
    を特徴とする半導体チップのダイボンディング方法。
JP9167685A 1985-04-26 1985-04-26 半導体チツプのダイボンデイング方法 Expired - Lifetime JPH0626222B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9167685A JPH0626222B2 (ja) 1985-04-26 1985-04-26 半導体チツプのダイボンデイング方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9167685A JPH0626222B2 (ja) 1985-04-26 1985-04-26 半導体チツプのダイボンデイング方法

Publications (2)

Publication Number Publication Date
JPS61251045A JPS61251045A (ja) 1986-11-08
JPH0626222B2 true JPH0626222B2 (ja) 1994-04-06

Family

ID=14033092

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9167685A Expired - Lifetime JPH0626222B2 (ja) 1985-04-26 1985-04-26 半導体チツプのダイボンデイング方法

Country Status (1)

Country Link
JP (1) JPH0626222B2 (ja)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06209058A (ja) * 1993-01-12 1994-07-26 Mitsubishi Electric Corp 半導体装置及びその製造方法，並びにその実装方法
JP2003045903A (ja) * 2001-08-01 2003-02-14 Fujitsu Ten Ltd ダイボンド装置
JP2009164203A (ja) * 2007-12-28 2009-07-23 Mitsubishi Electric Corp 半導体装置および半導体装置の製造方法

Also Published As

Publication number Publication date
JPS61251045A (ja) 1986-11-08

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