DE69318879D1 - Keramisches Mehrschicht-Substrat für hohe Frequenzen - Google Patents

Keramisches Mehrschicht-Substrat für hohe Frequenzen

Info

Publication number
DE69318879D1
DE69318879D1 DE69318879T DE69318879T DE69318879D1 DE 69318879 D1 DE69318879 D1 DE 69318879D1 DE 69318879 T DE69318879 T DE 69318879T DE 69318879 T DE69318879 T DE 69318879T DE 69318879 D1 DE69318879 D1 DE 69318879D1
Authority
DE
Germany
Prior art keywords
high frequencies
layer substrate
ceramic multi
ceramic
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69318879T
Other languages
English (en)
Other versions
DE69318879T2 (de
Inventor
Kazuo Eda
Yutaka Taguchi
Katsuyuki Miyauchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP4081815A external-priority patent/JPH06291520A/ja
Priority claimed from JP4101177A external-priority patent/JPH06291521A/ja
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Publication of DE69318879D1 publication Critical patent/DE69318879D1/de
Application granted granted Critical
Publication of DE69318879T2 publication Critical patent/DE69318879T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64—Impedance arrangements
    • H01L23/66—High-frequency adaptations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
    • H01L2223/64—Impedance arrangements
    • H01L2223/66—High-frequency adaptations
    • H01L2223/6644—Packaging aspects of high-frequency amplifiers
    • H01L2223/665—Bias feed arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance
DE69318879T 1992-04-03 1993-03-30 Keramisches Mehrschicht-Substrat für hohe Frequenzen Expired - Fee Related DE69318879T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP4081815A JPH06291520A (ja) 1992-04-03 1992-04-03 高周波多層集積回路
JP4101177A JPH06291521A (ja) 1992-04-21 1992-04-21 高周波多層集積回路

Publications (2)

Publication Number Publication Date
DE69318879D1 true DE69318879D1 (de) 1998-07-09
DE69318879T2 DE69318879T2 (de) 1998-10-08

Family

ID=26422814

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69318879T Expired - Fee Related DE69318879T2 (de) 1992-04-03 1993-03-30 Keramisches Mehrschicht-Substrat für hohe Frequenzen

Country Status (3)

Country Link
US (1) US5387888A (de)
EP (1) EP0563873B1 (de)
DE (1) DE69318879T2 (de)

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US5696466A (en) * 1995-12-08 1997-12-09 The Whitaker Corporation Heterolithic microwave integrated impedance matching circuitry and method of manufacture
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KR100677005B1 (ko) * 1996-10-31 2007-01-31 라미나 세라믹스, 인크. 전자 집적 회로
SE508138C2 (sv) * 1996-12-20 1998-08-31 Ericsson Telefon Ab L M Metod och anordning för anslutning av elektrisk komponent till kretskort
SE508139C2 (sv) * 1996-12-20 1998-08-31 Ericsson Telefon Ab L M Metod och anordning för anslutning av elektrisk komponent till kretskort
US9054094B2 (en) 1997-04-08 2015-06-09 X2Y Attenuators, Llc Energy conditioning circuit arrangement for integrated circuit
US7336468B2 (en) 1997-04-08 2008-02-26 X2Y Attenuators, Llc Arrangement for energy conditioning
US7321485B2 (en) 1997-04-08 2008-01-22 X2Y Attenuators, Llc Arrangement for energy conditioning
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US6261872B1 (en) * 1997-09-18 2001-07-17 Trw Inc. Method of producing an advanced RF electronic package
JP3322199B2 (ja) * 1998-01-06 2002-09-09 株式会社村田製作所 多層セラミック基板およびその製造方法
US6154176A (en) * 1998-08-07 2000-11-28 Sarnoff Corporation Antennas formed using multilayer ceramic substrates
JP2000165085A (ja) * 1998-11-24 2000-06-16 Nec Corp フレキシブルボード及びその不要輻射防止方法並びに携帯 電話機
US6204448B1 (en) 1998-12-04 2001-03-20 Kyocera America, Inc. High frequency microwave packaging having a dielectric gap
JP2000307452A (ja) * 1999-02-16 2000-11-02 Murata Mfg Co Ltd 高周波複合部品及びそれを用いた携帯無線機
SE514424C2 (sv) * 1999-06-17 2001-02-19 Ericsson Telefon Ab L M Övergång mellan symmetrisk och asymmetrisk stripline i ett flerlagers mönsterkort
SE514425C2 (sv) * 1999-06-17 2001-02-19 Ericsson Telefon Ab L M Övergång mellan stripline och mikrostrip i kavitet i flerlagers mönsterkort
JP3976297B2 (ja) * 1999-09-29 2007-09-12 株式会社ルネサステクノロジ 高周波回路モジュールおよび通信装置
DE19951371A1 (de) 1999-10-26 2001-05-03 Nokia Mobile Phones Ltd Hochfrequenzschaltung mit einem Anschluß für eine gedruckte Antenne
JP2001308547A (ja) * 2000-04-27 2001-11-02 Sharp Corp 高周波多層回路基板
JP3976473B2 (ja) * 2000-05-09 2007-09-19 日本電気株式会社 高周波回路及びそれを用いたモジュール、通信機
GB2362507A (en) * 2000-05-20 2001-11-21 Central Research Lab Ltd A method of providing a bias voltage at radio frequencies
JP3609692B2 (ja) * 2000-05-24 2005-01-12 松下電器産業株式会社 高周波信号増幅装置およびその製造方法
US6473314B1 (en) * 2000-08-03 2002-10-29 Powerwave Technologies, Inc. RF power amplifier assembly employing multi-layer RF blocking filter
JP3443408B2 (ja) * 2001-02-26 2003-09-02 松下電器産業株式会社 配線基板及びそれを用いた半導体装置
US7061102B2 (en) * 2001-06-11 2006-06-13 Xilinx, Inc. High performance flipchip package that incorporates heat removal with minimal thermal mismatch
FR2826780A1 (fr) * 2001-06-28 2003-01-03 St Microelectronics Sa Dispositif semi-conducteur a structure hyperfrequence
US6633260B2 (en) * 2001-10-05 2003-10-14 Ball Aerospace & Technologies Corp. Electromechanical switching for circuits constructed with flexible materials
JP2003188338A (ja) * 2001-12-13 2003-07-04 Sony Corp 回路基板装置及びその製造方法
US6847273B2 (en) * 2003-04-25 2005-01-25 Cyntec Co., Ltd. Miniaturized multi-layer coplanar wave guide low pass filter
US7087965B2 (en) * 2004-04-22 2006-08-08 International Business Machines Corporation Strained silicon CMOS on hybrid crystal orientations
JPWO2006001505A1 (ja) * 2004-06-25 2008-04-17 イビデン株式会社 プリント配線板及びその製造方法
GB2439862A (en) 2005-03-01 2008-01-09 X2Y Attenuators Llc Conditioner with coplanar conductors
US20060220167A1 (en) * 2005-03-31 2006-10-05 Intel Corporation IC package with prefabricated film capacitor
US20060289976A1 (en) * 2005-06-23 2006-12-28 Intel Corporation Pre-patterned thin film capacitor and method for embedding same in a package substrate
TW200924453A (en) * 2007-11-16 2009-06-01 Htc Corp Wireless communication module
US8497804B2 (en) * 2008-10-31 2013-07-30 Medtronic, Inc. High dielectric substrate antenna for implantable miniaturized wireless communications and method for forming the same
US9399143B2 (en) * 2008-10-31 2016-07-26 Medtronic, Inc. Antenna for implantable medical devices formed on extension of RF circuit substrate and method for forming the same
US8983618B2 (en) * 2008-10-31 2015-03-17 Medtronic, Inc. Co-fired multi-layer antenna for implantable medical devices and method for forming the same
US8050771B2 (en) * 2008-12-29 2011-11-01 Medtronic, Inc. Phased array cofire antenna structure and method for operating the same
US8626310B2 (en) * 2008-12-31 2014-01-07 Medtronic, Inc. External RF telemetry module for implantable medical devices
US8725263B2 (en) * 2009-07-31 2014-05-13 Medtronic, Inc. Co-fired electrical feedthroughs for implantable medical devices having a shielded RF conductive path and impedance matching
JP5352437B2 (ja) * 2009-11-30 2013-11-27 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
KR101114873B1 (ko) * 2010-08-31 2012-02-28 주식회사 이음플러스 근접센서를 이용한 이동 감지장치 및 이동 감지방법
GB201105912D0 (en) 2011-04-07 2011-05-18 Diamond Microwave Devices Ltd Improved matching techniques for power transistors
US9270003B2 (en) 2012-12-06 2016-02-23 Anaren, Inc. Stripline assembly having first and second pre-fired ceramic substrates bonded to each other through a conductive bonding layer
US8957325B2 (en) 2013-01-15 2015-02-17 Fujitsu Limited Optimized via cutouts with ground references
US9076790B1 (en) 2014-01-09 2015-07-07 Taiwan Semiconductor Manufacturing Co., Ltd. Air gap forming techniques based on anodic alumina for interconnect structures
US9871501B2 (en) 2015-06-22 2018-01-16 Nxp Usa, Inc. RF circuit with multiple-definition RF substrate and conductive material void under a bias line
CN105244324B (zh) 2015-11-10 2017-09-29 河北中瓷电子科技有限公司 电子封装用陶瓷绝缘子及其制作方法
US10225922B2 (en) 2016-02-18 2019-03-05 Cree, Inc. PCB based semiconductor package with impedance matching network elements integrated therein
US9960127B2 (en) * 2016-05-18 2018-05-01 Macom Technology Solutions Holdings, Inc. High-power amplifier package
US10134658B2 (en) 2016-08-10 2018-11-20 Macom Technology Solutions Holdings, Inc. High power transistors
WO2019097564A1 (ja) * 2017-11-14 2019-05-23 日本碍子株式会社 パッケージおよび半導体装置
US10153208B1 (en) * 2018-01-09 2018-12-11 Thin Film Technology Corporation High frequency attenuator
US11562890B2 (en) 2018-12-06 2023-01-24 Applied Materials, Inc. Corrosion resistant ground shield of processing chamber

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US4476446A (en) * 1981-08-25 1984-10-09 Raytheon Company Impedance matching network for field effect transistor
JPH0812887B2 (ja) * 1985-04-13 1996-02-07 富士通株式会社 高速集積回路パツケ−ジ
JPH0268301A (ja) * 1988-08-31 1990-03-07 Takayasu Kiwaki ショーツを女性用と同型のものを男性用に変更製造する方法と変更後のショーツ
US5136271A (en) * 1989-01-09 1992-08-04 Mitsubishi Denki Kabushiki Kaisha Microwave integrated circuit mountings
JP2501907B2 (ja) * 1989-06-23 1996-05-29 日産自動車株式会社 車両の梯子型サブフレ―ム構造
JPH0773202B2 (ja) * 1989-12-28 1995-08-02 三菱電機株式会社 半導体集積回路
EP0444820A3 (en) * 1990-02-26 1992-07-08 Raytheon Company Mmic package and connection
JPH0479601A (ja) * 1990-07-23 1992-03-13 Tdk Corp ストリップライン内蔵の多層基板
US5087896A (en) * 1991-01-16 1992-02-11 Hughes Aircraft Company Flip-chip MMIC oscillator assembly with off-chip coplanar waveguide resonant inductor

Also Published As

Publication number Publication date
EP0563873A2 (de) 1993-10-06
DE69318879T2 (de) 1998-10-08
EP0563873A3 (en) 1993-11-24
US5387888A (en) 1995-02-07
EP0563873B1 (de) 1998-06-03

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee