US20060289976A1 - Pre-patterned thin film capacitor and method for embedding same in a package substrate - Google Patents

Pre-patterned thin film capacitor and method for embedding same in a package substrate Download PDF

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US20060289976A1
US20060289976A1 US11166962 US16696205A US2006289976A1 US 20060289976 A1 US20060289976 A1 US 20060289976A1 US 11166962 US11166962 US 11166962 US 16696205 A US16696205 A US 16696205A US 2006289976 A1 US2006289976 A1 US 2006289976A1
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layer
substrate
method
patterned
conductive
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Yongki Min
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Intel Corp
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Intel Corp
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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49822Multilayer substrates
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
    • H01G4/00Fixed capacitors; Processes of their manufacture
    • H01G4/002Details
    • H01G4/228Terminals
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
    • H01G4/00Fixed capacitors; Processes of their manufacture
    • H01G4/33Thin- or thick-film capacitors
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/16Printed circuits incorporating printed electric components, e.g. printed resistor, capacitor, inductor
    • H05K1/162Printed circuits incorporating printed electric components, e.g. printed resistor, capacitor, inductor incorporating printed capacitors
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73201Location after the connecting process on the same surface
    • H01L2224/73203Bump and layer connectors
    • H01L2224/73204Bump and layer connectors the bump connector being embedded into the layer connector
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/12Passive devices, e.g. 2 terminal devices
    • H01L2924/1204Optical Diode
    • H01L2924/12044OLED
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/153Connection portion
    • H01L2924/1531Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/01Dielectrics
    • H05K2201/0137Materials
    • H05K2201/0175Inorganic, non-metallic layer, e.g. resist or dielectric for printed capacitor
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/01Dielectrics
    • H05K2201/0137Materials
    • H05K2201/0179Thin film deposited insulating layer, e.g. inorganic layer for printed capacitor
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/03Conductive materials
    • H05K2201/0332Structure of the conductor
    • H05K2201/0335Layered conductors or foils
    • H05K2201/0355Metal foils
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/09Shape and layout
    • H05K2201/09209Shape and layout details of conductors
    • H05K2201/09654Shape and layout details of conductors covering at least two types of conductors provided for in H05K2201/09218 - H05K2201/095
    • H05K2201/09763Printed component having superposed conductors, but integrated in one circuit layer
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/02Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
    • H05K3/04Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed mechanically, e.g. by punching
    • H05K3/046Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed mechanically, e.g. by punching by selective transfer or selective detachment of a conductive layer
    • H05K3/048Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed mechanically, e.g. by punching by selective transfer or selective detachment of a conductive layer using a lift-off resist pattern or a release layer pattern
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/46Manufacturing multilayer circuits
    • H05K3/4644Manufacturing multilayer circuits by building the multilayer layer by layer, i.e. build-up multilayer circuits
    • H05K3/4652Adding a circuit layer by laminating a metal foil or a preformed metal foil pattern
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00Metal working
    • Y10T29/41Barrier layer or semiconductor device making
    • Y10T29/413Barrier layer device making
    • Y10T29/417Electrolytic device making [e.g., capacitor]

Abstract

An embedded passive structure, its method of formation, and its intergration onto a substrate during fabrication are disclosed, In one embodiment the embedded passive structure is a thin film capacitor (TFC) formed using a thin film laminate that has been mounted onto a substrate. The TFC's capacitor dielectric and/or lower electrode layers are patterned in such a way as to reduce damage and improve cycle time. In one embodiment, the capacitor dielectric has a high dielectric constant and the substrate is an organic packaging substrate.

Description

    FIELD OF THE INVENTION
  • Embodiments of the present invention relate generally to semiconductor technology and more specifically to semiconductor packaging.
  • BACKGROUND OF THE INVENTION
  • The demand for increased mobility in consumer electronics is pressuring manufacturers to scale electronic technologies (e.g., semiconductor devices) to ever smaller dimensions. At the same time, the demand for increased functionality, speed, noise elimination, etc., is forcing manufactures to increase the number of passive components (e.g., capacitors and resistors) used by consumer electronic devices. Passive component integration has traditionally been accomplished by mounting them onto package and/or printed circuit board (PCB) substrate surfaces. Restricting the location of the passive components to the substrate's surface however can limit the passive components' operational capabilities (due to their inherent distance from the semiconductor device) and the substrate's scalability.
  • One way manufacturers are attempting to address this is by embedding the passive components in the substrate, a technique referred to as embedded passive technology. This frees up surface real estate and facilitates substrate miniaturization. Speed and signal integrity also improves because embedded components provide a more direct path through which the IC signals propagate.
  • One particular area of interest with respect to embedded passive technology has been the incorporation of thin film capacitors (TFCs) into organic packaging (e.g., bismaleimide triazine resin, etc.) substrates. Among the various materials being considered for use as capacitor dielectrics are high-k ceramic materials. However, high-k ceramic materials can require processing at high temperatures (e.g., furnace annealing at 600-800 degrees Celsius) in order to achieve their high dielectric constant properties. At these temperatures, organic packaging substrates can melt.
  • One technique for addressing this involves mounting a pre-fabricated TFC laminate that has already been annealed onto the organic substrate. Shown in FIG. 1 is an example illustration of such a TFC laminate 102, which includes a high-k ceramic material 108 superimposed between conductive films 106 and 104. In FIG. 2, the conductive film 106 portion of the TFC laminate 102 has been patterned to define lower electrode structures 110. In FIG. 3 the partially patterned TFC 102 is then mounted to a substrate 118 that includes polymer build-up layers 111, 114 and copper build-up layer 112. The copper build-up layer 112 connects with underlying conductive structures (not shown) by way of via portions 113. Next, as shown in FIG. 4, the conductive film 104 is thinned and patterned to form upper electrode portions 121. Then, as shown in FIG. 5, via openings 122 are formed thru the high-k ceramic material, the polymer build-up layer 111, and in some cases, portions of the lower electrode structures 110, to expose underlying portions of copper build-up layer 112. Finally, as shown in FIG. 6, a conductive material is deposited in the vias and over the surface of the TFC where it is then thinned and patterned to form upper electrodes 126, biasing interconnects 128 for the lower electrodes, I/O interconnects 130, build-up interconnect structures, and/or the like.
  • The use of this integration scheme however is not without its problems. More specifically, any one of the processes used to pattern the lower electrodes 110, the upper electrode portions 121, and/or the via openings 122 can damage the hi-k ceramic dielectric 108 and thereby impact the functionality of the TFC.
  • BRIEF DESCRIPTION OF THE DRAWINGS
  • FIGS. 1-6 illustrate cross-sectional views showing formation of an embedded passive component in an organic substrate using conventional methods.
  • FIGS. 7-17 illustrate cross-sectional views showing formation of an embedded passive component in an organic substrate using an embodiment of the present invention.
  • For simplicity and clarity of illustration, elements in the drawings have not necessarily been drawn to scale. For example, the dimensions of some of the elements may be exaggerated relative to other elements for clarity. Where considered appropriate, reference numerals have been repeated among the drawings to indicate corresponding or analogous elements.
  • DETAILED DESCRIPTION
  • In the following detailed description, an embedded passive structure and its method of formation are disclosed. Reference is made to the accompanying drawings within which are shown, by way of illustration, specific embodiments by which the present invention may be practiced. It is to be understood that other embodiments may exist and that other structural changes may be made without departing from the scope and spirit of the present invention.
  • The terms on, above, below, and adjacent as used herein refer to the position of one layer or element relative to other layers or elements. As such, a first element disposed on, above, or below a second element may be directly in contact with the second element or it may include one or more intervening elements. In addition, a first element disposed next to or adjacent a second element may be directly in contact with the second element or it may include one or more intervening elements.
  • In one embodiment, a thin film laminate for use in the fabrication of embedded passives and its method of formation are disclosed. In one embodiment, the formation of embedded passive structures using a prepared thin film laminate mounted on a substrate is disclosed. Aspects of these and other embodiments will be discussed herein with respect to FIGS. 7-17, below. The figures, however, should not be taken to be limiting, as they are intended for the purpose of explanation and understanding.
  • Shown in FIGS. 7-11 are steps illustrating the formation of a thin film laminate that can be used to form embedded passive components, such as for example, thin film capacitors (TFCs) for use inside a packaging substrate, a PCB substrate, or the like. More specifically, FIGS. 7-11 illustrate formation of TFC laminate in such a way as to pre-pattern the laminate's capacitor dielectric and/or the capacitor electrodes so as to have a specific orientation prior to mounting the TFC laminate onto the substrate's surface. The term “substrate” as used herein, is intended to encompass any type of packaging substrate, PCB substrate, etc., which can be used to accommodate embedded passive components.
  • In FIG. 7, a cross-sectional view of patterned resist members 704 overlying a thin film conductive material 702 is shown (base layer). The patterned resist members 704 can be formed using conventional lithographic processes. The resist is patterned in such a way that exposed regions of underlying conductive material 702 correspond with the pattern of a subsequently defined capacitor dielectric (FIG. 9).
  • The conductive film 702 will subsequently be used to form a TFC capacitor electrode layer. The conductive film 702 is also used as the base material for forming the TFC's capacitor dielectric and opposing capacitor electrodes (not shown in FIG. 7). Conductive film 702 can be a free standing conductive layer or alternatively it can be supported by other layers, materials or structures. Typically, the conductive film 702 includes metal materials, such as copper, nickel, or the like. Typically, the conductive film 702 is metal foil layer having a thickness of 50-300 microns. In one non-limiting embodiment the conductive film 702 is a nickel foil material having a thickness of approximately 100 microns. At this thickness, the metal foil itself can function as a foundation for the deposition and patterning of subsequent capacitor dielectric and capacitor electrode layers.
  • Turning now to FIG. 8, a cross-sectional view of the structure shown in FIG. 7 is illustrated following formation of a dielectric film 802, 804 over the resist members 704 and over the conductive film 702. The dielectric film portions 802 and 804 are deposited contemporaneously. The raised portions 802 of the dielectric film (i.e. portions overlying the resist members 704) are temporary and will subsequently be removed. The recessed portions 804 of the dielectric film (i.e., portions overlying the conductive film 702) are permanent and will subsequently be used to form the TFC's capacitor dielectric.
  • Any number of materials can be used to form the dielectric film 804, 802. For example, it can include high dielectric constant (high-k) materials such as barium titinate (BaTiO3), strontium titinate (SrTiO3), barium strontium titinate (BaSrTiO3), or the like. For the purposes of this specification and as used by one of ordinary skill, barium titinate and barium strontium titinate are commonly also referred to as BT and BST, respectively. The dielectric film 804, 802 can be deposited using conventional physical vapor deposition (PVD)(i.e., evaporation, sputtering, etc.), chemical vapor deposition, spin-on processes, laser ablation, ion plating, plasma spray processes, or the like. In one embodiment, the dielectric 804,802 is a sputtered ceramic dielectric material. In one embodiment the dielectric 804,802 is a sputtered BST layer having a thickness in a range of approximately 0.1 microns to approximately 1.0 microns and deposited at a temperature less than approximately 200 degrees Celsius.
  • Turning now to FIG. 9, a cross-sectional view of the structure of FIG. 8 is shown after removal of resist members 704 and raised portions 802 of the capacitor dielectric film. The remaining structures 804 define a patterned capacitor dielectric layer. In accordance with one embodiment, the open regions 902 provide locations where subsequently formed vias can be positioned. The resist members 704 and raised portions 802 can be removed using a conventional resist lift-off method, for instance, using an organic solvent based resist remover such as acetone, an oxygen plasma, combinations thereof, or the like. The use of such lift-off methods is considered conventional to one of ordinary skill.
  • Turning now to FIG. 10, a cross-sectional view of the structure of FIG. 9 is illustrated following formation of patterned resist members 1006 and conductive film 1002, 1004 over the substrate. Like the portions 802 of the capacitor dielectric layer in FIG. 8, those portions 1004 of the conductive film that are formed over the resist members 1006 are subsequently removed. Remaining conductive film portions 1002 define a patterned layer of first (lower) capacitor electrodes for the TFC. The resist members can be formed using conventional resist patterning processes. The conductive film 1002, 1004 can be deposited using a PVD process, combination PVD and electroplating or electroless plating processes, or the like. The conductive film 1002, 1004 can include materials such as copper, nickel, platinum, and the like. The conductive film 1002, 1004 typically has a thickness in a range 5-40 microns. In one embodiment, the conductive film 1002, 1004 is copper, has a thickness in a range of approximately 10-20 microns, and is deposited using a combination of conventional sputter deposition and electroplating processes.
  • Next, as shown in FIG. 11, the resist members 1006 and conductive material portions 1004 are removed. The removal forms openings 1104, 1106, and defines patterned conductive regions 1102. The patterned conductive regions 1102 overlie portions of the capacitor dielectric 804 and the conductive film 702. Here, the patterned conductive regions 1102 define lower electrodes in the TFC laminate that have a specific orientation that facilitates formation of TFC structures on substrates. In one embodiment, the orientation is such that it accommodates the placement of vias during the formation of a conductive build-up layer on a packaging substrate. The resist members 1006 and conductive material 1004 can be removed using a conventional resist lift-off process, for instance using an organic solvent based resist remover such as acetone, an oxygen plasma, combinations thereof, or the like.
  • In accordance with one embodiment, the combination of the conductive film 702, the patterned capacitor dielectric 804, and the patterned conductive regions 1102 forms a pre-fabricated, pre-patterned lower electrode and capacitor dielectric TFC laminate 1100 that can be used to define embedded passive structures over a substrate. To the extent that the TFC laminate 1100 includes a high-k ceramic dielectric layer such as BST, BT, or the like, it can now be annealed at a temperature, for instance, in a range of approximately 500-900 degrees Celsius in order to adjust the dielectric constant accordingly. Alternatively, the annealing can take place at an earlier stage of the TFC fabrication process, for example prior to formation of resist members 1006.
  • Turning now to FIG. 12, the TFC laminate 1100 is next mounted to a substrate 1200. Typically the TFC laminate 1100 is mounted so that the patterned conductive regions (lower electrode) 1102 contact the substrate 1200 as shown in FIG. 12. In one embodiment, as here, the substrate 1200 is a packaging substrate, but one of ordinary skill appreciates that other substrates types, for example PCB substrates could equally incorporate one or more of the embodiments herein.
  • The substrate 1200 shown here includes polymer build-up layers 1202 and 1203 and a conductive build-up layer that includes interconnects 1206 and vias 1204. Polymer build-up layers can be formed, for example, using a dielectric material, such as an Ajinomoto Build-Up Film (ABF). Interconnects/vias can be formed, for example, using copper. The use and formation of build-up layers is known to one of ordinary skill. Underlying the vias 1204 and build-up dielectric film 1202 includes layer(s) 1208. Typically, layer(s) 1208 includes an organic core material as known to one of ordinary skill and/or additional dielectric and conductive build-up layers.
  • To improve adhesion between the TFC laminate 1100 and the substrate 1200, the TFC laminate 1100 and substrate can be joined after roughening the conductive regions 1102 and prior to curing the build-up layer 1203. The conductive region 1102 can be roughened using chemical etching, sputter etching, and/or the like processes. One of ordinary skill appreciates that the fragile nature of the TFC laminate 1100 and its relative alignment to the underlying substrate 1200 can be important considerations with respect to mounting the TFC 1100 onto the substrate 1200.
  • Next, referring to FIG. 13, the conductive film 702 is thinned and then patterned to partially form the upper electrode layer structures 1302. Thinning can be accomplished using, for instance, a wet etch process, a dry etch process, a polishing process, combinations thereof, or the like. To the extent that the conductive film 702 is nickel, thinning can be accomplished by etching it with a wet etchant, such as ferric chloride (FeCl3) prior to patterning. In one embodiment, the conductive film 702 is thinned to between approximately 10-20 microns.
  • Thinning facilitates patterning of upper electrode layer structures 1302 by reducing the amount of conductive material that must be removed. Thinning at this point in the processes may be advantageous because during earlier stages of TFC laminate 1100 fabrication, the thicker conductive film is stronger and less susceptible to physical/chemical damage during formation of the patterned capacitor dielectric and patterned lower electrode structures.
  • After thinning, the conductive film 702 is patterned with resist and then etched to define the partially formed upper electrode layer structures 1302. Etching can be accomplished using wet or dry etch processes. In one embodiment, the partially formed upper electrode layer structures 1302 are etched using a ferric chloride solution. As can be seen in FIG. 13, unlike conventional TFC processing which exposes portions of the capacitor dielectric to a potentially damaging etch process while defining the partially formed electrodes (FIG. 4), here the problem can been overcome by selectively limiting the formation of openings 1304 to pre-patterned regions where there is no capacitor dielectric to damage.
  • Next, shown in FIG. 14, the substrate is patterned to define via openings 1402 that extend through polymer build-up layer 1203 and expose portions of the underlying conductive interconnect structures 1206. The vias can be patterned using, for instance, a laser drilling process, a conventional photolithography/etch patterning process, or the like. In one embodiment, patterning is accomplished using a CO2 laser or the like.
  • As can be seen in FIG. 14, unlike conventional TFC processing which exposes portions of the capacitor dielectric to a potentially damaging laser drilling or etch process while forming the via openings (FIG. 5), here the problem has been overcome by selectively limiting the formation of the via openings 1402, 1404 to the pre-patterned regions where there is no capacitor dielectric to damage. That is, problems associated with damaging the capacitor dielectric during the process of defining via openings 1402, 1404 are significantly reduced because the capacitor dielectric has been strategically removed from regions that can be exposed to etchants and/or the laser via drilling process. In addition, because there is no ceramic dielectric layer portions that have to be removed during the formation of the via openings, conventional etch processes and/or lower power lasers (as opposed to the more expensive high-power laser drilling processes) can be used to form the via openings.
  • In addition, because the lower electrode layer 1102 has also been pre-patterned and conductive material removed from regions where via 1404 is to be formed, laser drilling process and/or etch rate and etch uniformity during formation of the via opening can be improved. That is, by removing regions of lower electrode layer 1102 from locations where via 1404 is to be formed, the type of material(s) which must be removed to form the via openings is more consistent from via-to-via across the substrate. This has the potential to reduce the amount of damage to underlying structures by reducing their overall time of exposure to the process that forms the via openings (i.e. overetch time can be reduced). In addition, it can also improve cycle time because obstructions (i.e., the portions of the lower electrode) which can impede the etch or laser ablation process have been removed.
  • Next, referring to FIGS. 15 and 16, a conductive material 1502 has been deposited in via openings 1404. This can be accomplished using a conventional electroplating, electroless plating, PVD process, or the like. Suitable materials for forming conductive fill material 1502 include copper, aluminum, or the like. In one embodiment the conductive material includes copper. In one embodiment, the conductive fill material is deposited by first globally depositing a seed layer of copper (e.g., a layer of copper having a thickness less than approximately one micron) using an electroless plating or PVD process followed by deposition of a full thickness copper material using an electroplating process. As shown in FIG. 15, the deposition typically also deposits conductive material 1502 over the surface of the partially formed upper electrode layer structures 1302. After the conductive material 1502 completely fills the via openings 1402 and adequately covers the surface of the substrate, the combination stack of conductive material 1502 overlying the partially formed upper electrode layer structures 1302 is then thinned and patterned to define the completely formed upper electrode and associated structures (upper conductive structures). Thinning can be accomplished using, for instance, a wet chemical etch process, a dry etch processes, a chemical mechanical polishing processes, and/or the like. Patterning can be accomplished using a conventional lithographic and etch patterning process, a lift-off process, or the like.
  • For the purpose of simplicity of illustration of understanding, the structure of FIG. 15 has been redrawn in FIG. 16 to show the combination stack of conductive material 1502 and partially defined upper electrode layer structures 1302 as unitary conductive structures 1602, 1604, and 1606. As can be seen in FIG. 16, the unitary conductive structures defined by the combination of conductive material 1505 and partially defined upper electrode layer structures 1302 form an I/O interconnect structure 1606, an interconnect structure 1604 that is coupled to a lower capacitor electrode, and an interconnect structure 1602 that is coupled to an upper capacitor electrode. One of ordinary skill appreciates that other integration schemes for forming the upper conductive structures could also include, for example, complete removal of the upper conductive film 702 (instead of thinning and patterning to form partially defined upper electrode layer structures 1302) followed by a seed layer deposition, the full thickness conductive layer deposition, and pattering to define the conductive structures 1602, 1604, 1606.
  • Embodiments of the present invention are not necessarily limited to only the formation of structures such as 1602, 1604, and 1606. Any number of other interconnect features associated with the formation of build-up layer technology can be accommodated using one or more of the integration schemes disclosed herein. In other words, using one or more of the embodiments disclosed herein, any one of the conductive structures 1602, 1604, 1606 can be incorporated into processes used to form conductive build-up layer interconnects. So for example, in those regions of the TFC laminate corresponding to regions where only conductive build-up layer interconnects and/or vias are to be formed, pre-patterning processes can be used to remove capacitor dielectric and lower electrode layer materials. And then, after the laminate is mounted, portions of conductive film 702 can be cleared away from interconnect and/or via regions during the etch process to form the openings 1304 (FIG. 13). In this way, one or more of the embodiments disclosed herein can be seamlessly integrated into existing build-up layer technology process flows.
  • Subsequent processing is considered conventional to one of ordinary skill. So, for example, referring to FIG. 17, which shows the relative positional relationships of conductive build-up layers 1712, 1714, 1716, 1724, polymer build-up layers 1704, 1706, 1708, 1710, 1726, an organic core material 1702, a semiconductor die 1720, underfill material/fillets 1722, die-to-package interconnects 1718, and package-to-PCB interconnects 1728, if TFC structures similar to one or more of those disclosed in FIGS. 7-16 were incorporated into, for instance, the conductive build-up layer 1714 (TFC structures not shown), then additional conductive build up layer 1716 and polymer build-up layers 1708 and 1710 could additionally be formed overlying them using conventional methods. Following the formation of the desired number of build-up layers, the semiconductor die can be attached to the package substrate using conventional die attach reflow methods, bump interconnects 1728 could be attached to the package substrate using conventional methods (e.g. ball grid array (BGA) reflow methods), and then the integrated package that includes the passive TFCs could be mounted to a PCB, a mother board, or the like, for use by the electronic device.
  • In at least one of the embodiments disclosed herein, a TFC laminate's capacitor dielectric and its method of formation are disclosed. The capacitor dielectric is pre-patterned in such a way that makes it less susceptible to damage from etch and/or laser ablation processes used to define the capacitor structure. In an alternative embodiment, a TFC laminate's capacitor electrode and its method of formation are disclosed. The capacitor electrode is pre-patterned in such as way that improves etch/laser ablation uniformity during processes used to form via openings. In an alternative embodiment, the integration of a TFC laminate having pre-patterned capacitor dielectric structures and/or pre-patterned electrode layer structures onto a substrate is disclosed. In an alternative embodiment, the formation of thin film capacitors in build-up layers of a packaging substrate is disclosed
  • The various embodiments described above have been presented by way of example and not by way of limitation. Thus, for example, while embodiments disclosed herein teach the formation of embedded capacitors in build-up layer of a packaging substrate. Other passive structures, such as for example inductors, resistors, etc., can similarly be formed and/or accommodated using one or more of the embodiments disclosed herin. Also, these passive components can be formed in any number of substrate types that can accommodate the incorporation TFC laminates.
  • Having thus described in detail embodiments of the present invention, it is understood that the invention defined by the appended claims is not to be limited by particular details set forth in the above description, as many apparent variations thereof are possible without departing from the spirit or scope thereof.

Claims (30)

1. An embedded passive device in a substrate comprising:
a first conductive layer overlying a polymer build-up layer;
a dielectric layer overlying the first conductive layer;
a second conductive layer overlying the dielectric layer; and
a via that extends from the second conductive layer through the polymer build-up layer and electrically couples to an underlying interconnect, wherein the via extends through an opening patterned in the dielectric layer.
2. The embedded passive device of claim 1, wherein:
the first conductive layer is further characterized as a first electrode layer;
the dielectric layer is further characterized as a capacitor dielectric layer;
the second conductive layer is further characterized a second electrode layer; and
a combination of the first electrode layer, the capacitor dielectric layer, and the second electrode layer forms an embedded capacitor structure in the substrate.
3. The embedded passive device of claim 2, wherein the capacitor dielectric layer includes a ceramic dielectric material.
4. The embedded passive device of claim 3, wherein the ceramic dielectric material is selected from the group consisting of strontium titinate, barium strontium titinate, and/or barium titinate.
5. The embedded passive device of claim 4, wherein the substrate is further characterized as an organic substrate.
6. The embedded passive device of claim 5, wherein a core of the substrate includes bismaleimide triazine resin.
7. The embedded passive device of claim 5, wherein the second conductive layer comprises a material selected from the group consisting of copper and nickel.
8. The embedded passive device of claim 5, wherein the first conductive layer comprises a material selected from a group consisting of copper, platinum, and nickel.
9. The embedded passive device of claim 3, wherein the via extends through an opening patterned in the first conductive layer.
10. An embedded passive laminate for applying to a substrate comprising:
a patterned electrode layer;
a patterned capacitor dielectric layer; and
an unpatterned electrode layer.
11. The embedded passive laminate of claim 10, wherein the patterned electrode layer comprises a material selected from the group consisting of copper, platinum, and nickel.
12. The embedded passive laminate of claim 11, wherein the unpatterned electrode layer comprises a material selected from the group consisting of copper and nickel.
13. The embedded passive laminate of claim 11, wherein the patterned capacitor dielectric layer comprises a ceramic dielectric material.
14. The embedded passive laminate of claim 11, wherein the patterned capacitor dielectric layer comprises a material selected from the group consisting of strontium titinate, barium strontium titinate, and/or barium titinate.
15. The embedded passive laminate of claim 14, wherein the substrate is further characterized as an organic substrate.
16. A method for forming embedded passive structures in an organic packaging substrate comprising affixing an embedded passive laminate on the organic packaging substrate, wherein the embedded passive laminate includes a pre-patterned capacitor dielectric layer.
17. The method of claim 16, wherein the pre-patterned capacitor dielectric layer is further characterized as a ceramic dielectric material.
18. The method of claim 17, wherein the ceramic dielectric material is further characterized as being selected from a group consisting of strontium titinate, barium strontium titinate, and/or barium titinate.
19. The method of claim 18, wherein the substrate is further characterized as an organic substrate.
20. A method for forming an embedded thin film capacitor comprising:
depositing a ceramic dielectric layer over a base layer of conductive material;
patterning the ceramic dielectric layer to form first openings that expose portions of the base layer;
depositing a lower electrode layer over the ceramic dielectric layer; and
patterning the lower electrode layer to form second openings that expose portions of the base layer.
21. The method of claim 20 further comprising heating the ceramic dielectric at a temperature in a range of 500-900 degrees Celsius. prior to depositing the lower electrode layer.
22. The method of claim 21, wherein the combination base layer, patterned capacitor dielectric, and patterned lower electrode layer forms a thin film capacitor laminate, the method further comprising:
mounting the thin film capacitor laminate over a dielectric layer on a substrate, wherein the patterned lower electrode layer is positioned between the base layer and the dielectric layer;
removing portions of the base layer;
forming via openings that pass through the first opening and the second opening and that extend through the dielectric layer to an underlying conductive structure;
filling the via openings with a conductive material; and
patterning the conductive material to form a conductive structure.
23. The method of claim 22, wherein the ceramic capacitor dielectric is further characterized as a material selected from a group consisting of strontium titinate, barium strontium titinate, and/or barium titinate.
24. The method of claim 23, wherein the base layer includes at least one of copper and nickel.
25. The method of claim 24, wherein the lower electrode layer includes at least one of copper, platinum, and nickel
26. The method of claim 23 wherein the first opening is wider than the second opening.
27. The method of claim 23, wherein the second opening is wider than the first opening and wherein the conductive structure electrically couples to portions of the lower electrode layer.
28. The method of claim 23, wherein the conductive structure is further characterized as an upper capacitor electrode.
29. A method for packaging a semiconductor die comprising mounting the semiconductor die to an organic packaging substrate, wherein the organic packaging substrate includes embedded thin film capacitors that have been formed by applying a laminate that includes a pre-patterned capacitor dielectric layer over build-up layers of the packaging substrate.
30. The method of claim 29, wherein the package substrate is further chartacterized as a ball grid array package substrate.
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Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060254050A1 (en) * 2001-06-05 2006-11-16 Dai Nippon Printing Co., Ltd. Method for fabricating wiring board provided with passive element, and wiring board provided with passive element
US20070222030A1 (en) * 2006-03-27 2007-09-27 Salama Islam A Low temperature deposition and ultra fast annealing of integrated circuit thin film capacitor
US20070242414A1 (en) * 2006-03-31 2007-10-18 Huankiat Seh Inkjet patterning for thin-film capacitor fabrication, thin-film capacitors fabricated thereby, and systems containing same
US20080003764A1 (en) * 2006-06-30 2008-01-03 Huankiat Seh Method of providing a pre-patterned high-k dielectric film
US20080137263A1 (en) * 2006-12-11 2008-06-12 Yongki Min Method of fabricating a microelectronic device includling embedded thin film capacitor by over-etching thin film capacitor bottom electrode and microelectronic device made according to the method
US20080145622A1 (en) * 2006-12-14 2008-06-19 Roy Mihir K Polymer-based integrated thin film capacitors, packages containing same and methods related thereto
WO2008088587A1 (en) * 2007-01-18 2008-07-24 The Board Of Trustees Of The University Of Illinois High throughput, low cost dual-mode patterning method for large area substrates
US20080239620A1 (en) * 2007-03-30 2008-10-02 Yongki Min Carbon nanotube coated capacitor electrodes
US20080251877A1 (en) * 2007-04-12 2008-10-16 Kanti Jain Methods for fabricating complex micro and nanoscale structures and electronic devices and components made by the same
US20090023098A1 (en) * 2007-07-16 2009-01-22 Kanti Jain Method for fabricating dual damascene profiles using sub pixel-voting lithography and devices made by same
US20090239042A1 (en) * 2008-03-21 2009-09-24 Kanti Jain Material Assisted Laser Ablation
US20090273057A1 (en) * 2006-06-29 2009-11-05 Huankiat Seh Method, apparatus, and system for low temperature deposition and irradiation annealing of thin film capacitor
US20100143848A1 (en) * 2008-12-09 2010-06-10 Kanti Jain Patterning methods for stretchable structures
US20110147917A1 (en) * 2009-12-22 2011-06-23 Fairchild Semiconductor Corporation Integrated circuit package with embedded components
US20160150649A1 (en) * 2014-11-25 2016-05-26 Hsien-Ping Peng Integrated passive module, semiconductor device and manufacturing method thereof
KR101733608B1 (en) 2014-09-18 2017-05-10 인텔 코포레이션 Integration of embedded thin film capacitors in package substrates
WO2018199990A1 (en) * 2017-04-28 2018-11-01 Intel Corporation Substrate integrated inductor

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8391017B2 (en) * 2009-04-28 2013-03-05 Georgia Tech Research Corporation Thin-film capacitor structures embedded in semiconductor packages and methods of making
US20100270646A1 (en) * 2009-04-28 2010-10-28 Georgia Tech Research Corporation Thin-film capacitor structures embedded in semiconductor packages and methods of making

Citations (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3585472A (en) * 1970-01-13 1971-06-15 Sprague Electric Co Coated electrical component and method of manufacturing
US4236046A (en) * 1978-10-10 1980-11-25 Rogers Corporation High capacitance bus bar
US4998159A (en) * 1988-06-10 1991-03-05 Hitachi, Ltd. Ceramic laminated circuit substrate
US5126801A (en) * 1984-11-05 1992-06-30 Hitachi, Ltd. Superconducting device
US5612512A (en) * 1992-11-11 1997-03-18 Murata Manufacturing Co., Ltd. High frequency electronic component having base substrate formed of bismaleimide-triazine resin and resistant film formed on base substrate
US6277436B1 (en) * 1997-11-26 2001-08-21 Advanced Technology Materials, Inc. Liquid delivery MOCVD process for deposition of high frequency dielectric materials
US20020070400A1 (en) * 2000-09-08 2002-06-13 Akinobu Shibuya Capacitor, capacitor mounting structure, method for manufacturing same, semiconductor device, and method for manufacturing same
US6524905B2 (en) * 2000-07-14 2003-02-25 Nec Corporation Semiconductor device, and thin film capacitor
US6590227B2 (en) * 1999-12-27 2003-07-08 Semiconductor Energy Laboratory Co., Ltd. Active matrix display device
US6611419B1 (en) * 2000-07-31 2003-08-26 Intel Corporation Electronic assembly comprising substrate with embedded capacitors
US6678144B2 (en) * 2001-03-01 2004-01-13 Shinko Electric Industries Co., Ltd Capacitor, circuit board with built-in capacitor and method for producing the same
US6714422B2 (en) * 2000-09-14 2004-03-30 Sony Corporation High frequency module device and method for its preparation
US20040087058A1 (en) * 2002-10-29 2004-05-06 Kiyoshi Ooi Substrate for carrying a semiconductor chip and a manufacturing method thereof
US20040104451A1 (en) * 2002-10-29 2004-06-03 Kiyoshi Ooi Capacitor and manufacturing method thereof, semiconductor device and substrate for a semiconductor device
US6803324B2 (en) * 2001-01-31 2004-10-12 Sony Corporation Semiconductor device and its manufacturing method
US6818469B2 (en) * 2002-05-27 2004-11-16 Nec Corporation Thin film capacitor, method for manufacturing the same and printed circuit board incorporating the same
US6847527B2 (en) * 2001-08-24 2005-01-25 3M Innovative Properties Company Interconnect module with reduced power distribution impedance
US6889431B2 (en) * 2001-11-26 2005-05-10 Hitachi, Ltd. Manufacturing method of electronic circuit including multilayer circuit board
US6890810B2 (en) * 2003-06-02 2005-05-10 International Business Machines Corporation Method of fabrication of thin film resistor with zero TCR
US6917259B2 (en) * 2001-09-13 2005-07-12 Sony Corporation High-frequency module substrate device
US6970362B1 (en) * 2000-07-31 2005-11-29 Intel Corporation Electronic assemblies and systems comprising interposer with embedded capacitors
US20060000542A1 (en) * 2004-06-30 2006-01-05 Yongki Min Metal oxide ceramic thin film on base metal electrode
US20060091494A1 (en) * 2003-02-27 2006-05-04 Tdk Corproation High-permittivity insulation film, thin film capacity element, thin film multilayer capacitor, and production method of thin film capacity element
US20060099803A1 (en) * 2004-10-26 2006-05-11 Yongki Min Thin film capacitor
US20060220167A1 (en) * 2005-03-31 2006-10-05 Intel Corporation IC package with prefabricated film capacitor
US20060228855A1 (en) * 2005-03-29 2006-10-12 Intel Corporation Capacitor with co-planar electrodes
US20060281278A1 (en) * 2005-06-14 2006-12-14 Intel Corporation Integrated thin-film capacitor with etch-stop layer, process of making same, and packages containing same
US7290315B2 (en) * 2004-10-21 2007-11-06 Intel Corporation Method for making a passive device structure

Family Cites Families (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03178112A (en) 1989-12-06 1991-08-02 Matsushita Electric Ind Co Ltd Compound chip part
US6568073B1 (en) 1991-11-29 2003-05-27 Hitachi Chemical Company, Ltd. Process for the fabrication of wiring board for electrical tests
DE69318879T2 (en) 1992-04-03 1998-10-08 Matsushita Electric Ind Co Ltd A ceramic multilayer substrate for high frequencies
US5256597A (en) 1992-09-04 1993-10-26 International Business Machines Corporation Self-aligned conducting etch stop for interconnect patterning
US5976912A (en) 1994-03-18 1999-11-02 Hitachi Chemical Company, Ltd. Fabrication process of semiconductor package and semiconductor package
US5631804A (en) * 1995-11-13 1997-05-20 Micron Technology, Inc. Contact fill capacitor having a sidewall that connects the upper and lower surfaces of the dielectric and partially surrounds an insulating layer
US5930639A (en) 1996-04-08 1999-07-27 Micron Technology, Inc. Method for precision etching of platinum electrodes
US5982018A (en) 1997-05-23 1999-11-09 Micron Technology, Inc. Thin film capacitor coupons for memory modules and multi-chip modules
US6005197A (en) 1997-08-25 1999-12-21 Lucent Technologies Inc. Embedded thin film passive components
US5970362A (en) 1997-12-18 1999-10-19 Advanced Micro Devices, Inc. Simplified shallow trench isolation formation with no polish stop
US6180976B1 (en) 1999-02-02 2001-01-30 Conexant Systems, Inc. Thin-film capacitors and methods for forming the same
US6582979B2 (en) 2000-11-15 2003-06-24 Skyworks Solutions, Inc. Structure and method for fabrication of a leadless chip carrier with embedded antenna
US6218729B1 (en) 1999-03-11 2001-04-17 Atmel Corporation Apparatus and method for an integrated circuit having high Q reactive components
US6400576B1 (en) 1999-04-05 2002-06-04 Sun Microsystems, Inc. Sub-package bypass capacitor mounting for an array packaged integrated circuit
US6252178B1 (en) 1999-08-12 2001-06-26 Conexant Systems, Inc. Semiconductor device with bonding anchors in build-up layers
US6565730B2 (en) 1999-12-29 2003-05-20 Intel Corporation Self-aligned coaxial via capacitors
US6724611B1 (en) 2000-03-29 2004-04-20 Intel Corporation Multi-layer chip capacitor
US6407929B1 (en) 2000-06-29 2002-06-18 Intel Corporation Electronic package having embedded capacitors and method of fabrication therefor
US6346743B1 (en) 2000-06-30 2002-02-12 Intel Corp. Embedded capacitor assembly in a package
US6512182B2 (en) 2001-03-12 2003-01-28 Ngk Spark Plug Co., Ltd. Wiring circuit board and method for producing same
JP2002305125A (en) 2001-04-06 2002-10-18 Mitsubishi Materials Corp Capacitor array
US6507496B2 (en) 2001-05-31 2003-01-14 Intel Corporation Module having integrated circuit packages coupled to multiple sides with package types selected based on inductance of leads to couple the module to another component
US6477034B1 (en) 2001-10-03 2002-11-05 Intel Corporation Interposer substrate with low inductance capacitive paths
US6660564B2 (en) 2002-01-25 2003-12-09 Sony Corporation Wafer-level through-wafer packaging process for MEMS and MEMS package produced thereby
US6519136B1 (en) 2002-03-29 2003-02-11 Intel Corporation Hybrid dielectric material and hybrid dielectric capacitor
JP3657925B2 (en) 2002-06-17 2005-06-08 インフィネオン テクノロジース アクチエンゲゼルシャフト Semiconductor device and manufacturing method thereof
US6900708B2 (en) * 2002-06-26 2005-05-31 Georgia Tech Research Corporation Integrated passive devices fabricated utilizing multi-layer, organic laminates
US20040231885A1 (en) 2003-03-07 2004-11-25 Borland William J. Printed wiring boards having capacitors and methods of making thereof
US6787902B1 (en) 2003-03-27 2004-09-07 Intel Corporation Package structure with increased capacitance and method
JP4271590B2 (en) 2004-01-20 2009-06-03 新光電気工業株式会社 Semiconductor device and manufacturing method thereof
US7205651B2 (en) 2004-04-16 2007-04-17 St Assembly Test Services Ltd. Thermally enhanced stacked die package and fabrication method
US7221050B2 (en) * 2004-09-02 2007-05-22 Intel Corporation Substrate having a functionally gradient coefficient of thermal expansion
US20060091495A1 (en) 2004-10-29 2006-05-04 Palanduz Cengiz A Ceramic thin film on base metal electrode
US7541265B2 (en) * 2005-01-10 2009-06-02 Endicott Interconnect Technologies, Inc. Capacitor material for use in circuitized substrates, circuitized substrate utilizing same, method of making said circuitized substrate, and information handling system utilizing said circuitized substrate
US7436346B2 (en) 2005-01-20 2008-10-14 At&T Intellectual Property I, L.P. System, method and interface for controlling multiple electronic devices of a home entertainment system via a single control device
US7435675B2 (en) 2006-06-30 2008-10-14 Intel Corporation Method of providing a pre-patterned high-k dielectric film

Patent Citations (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3585472A (en) * 1970-01-13 1971-06-15 Sprague Electric Co Coated electrical component and method of manufacturing
US4236046A (en) * 1978-10-10 1980-11-25 Rogers Corporation High capacitance bus bar
US5126801A (en) * 1984-11-05 1992-06-30 Hitachi, Ltd. Superconducting device
US4998159A (en) * 1988-06-10 1991-03-05 Hitachi, Ltd. Ceramic laminated circuit substrate
US5612512A (en) * 1992-11-11 1997-03-18 Murata Manufacturing Co., Ltd. High frequency electronic component having base substrate formed of bismaleimide-triazine resin and resistant film formed on base substrate
US6277436B1 (en) * 1997-11-26 2001-08-21 Advanced Technology Materials, Inc. Liquid delivery MOCVD process for deposition of high frequency dielectric materials
US6590227B2 (en) * 1999-12-27 2003-07-08 Semiconductor Energy Laboratory Co., Ltd. Active matrix display device
US6524905B2 (en) * 2000-07-14 2003-02-25 Nec Corporation Semiconductor device, and thin film capacitor
US6611419B1 (en) * 2000-07-31 2003-08-26 Intel Corporation Electronic assembly comprising substrate with embedded capacitors
US6970362B1 (en) * 2000-07-31 2005-11-29 Intel Corporation Electronic assemblies and systems comprising interposer with embedded capacitors
US20020070400A1 (en) * 2000-09-08 2002-06-13 Akinobu Shibuya Capacitor, capacitor mounting structure, method for manufacturing same, semiconductor device, and method for manufacturing same
US6714422B2 (en) * 2000-09-14 2004-03-30 Sony Corporation High frequency module device and method for its preparation
US6803324B2 (en) * 2001-01-31 2004-10-12 Sony Corporation Semiconductor device and its manufacturing method
US6678144B2 (en) * 2001-03-01 2004-01-13 Shinko Electric Industries Co., Ltd Capacitor, circuit board with built-in capacitor and method for producing the same
US6847527B2 (en) * 2001-08-24 2005-01-25 3M Innovative Properties Company Interconnect module with reduced power distribution impedance
US6917259B2 (en) * 2001-09-13 2005-07-12 Sony Corporation High-frequency module substrate device
US6889431B2 (en) * 2001-11-26 2005-05-10 Hitachi, Ltd. Manufacturing method of electronic circuit including multilayer circuit board
US6818469B2 (en) * 2002-05-27 2004-11-16 Nec Corporation Thin film capacitor, method for manufacturing the same and printed circuit board incorporating the same
US20040087058A1 (en) * 2002-10-29 2004-05-06 Kiyoshi Ooi Substrate for carrying a semiconductor chip and a manufacturing method thereof
US20040104451A1 (en) * 2002-10-29 2004-06-03 Kiyoshi Ooi Capacitor and manufacturing method thereof, semiconductor device and substrate for a semiconductor device
US20060091494A1 (en) * 2003-02-27 2006-05-04 Tdk Corproation High-permittivity insulation film, thin film capacity element, thin film multilayer capacitor, and production method of thin film capacity element
US6890810B2 (en) * 2003-06-02 2005-05-10 International Business Machines Corporation Method of fabrication of thin film resistor with zero TCR
US20060000542A1 (en) * 2004-06-30 2006-01-05 Yongki Min Metal oxide ceramic thin film on base metal electrode
US7290315B2 (en) * 2004-10-21 2007-11-06 Intel Corporation Method for making a passive device structure
US20060099803A1 (en) * 2004-10-26 2006-05-11 Yongki Min Thin film capacitor
US20060228855A1 (en) * 2005-03-29 2006-10-12 Intel Corporation Capacitor with co-planar electrodes
US20060220167A1 (en) * 2005-03-31 2006-10-05 Intel Corporation IC package with prefabricated film capacitor
US20060281278A1 (en) * 2005-06-14 2006-12-14 Intel Corporation Integrated thin-film capacitor with etch-stop layer, process of making same, and packages containing same

Cited By (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7679925B2 (en) * 2001-06-05 2010-03-16 Dai Nippon Printing Co., Ltd. Method for fabricating wiring board provided with passive element, and wiring board provided with passive element
US20060254050A1 (en) * 2001-06-05 2006-11-16 Dai Nippon Printing Co., Ltd. Method for fabricating wiring board provided with passive element, and wiring board provided with passive element
US20070222030A1 (en) * 2006-03-27 2007-09-27 Salama Islam A Low temperature deposition and ultra fast annealing of integrated circuit thin film capacitor
US8618593B2 (en) 2006-03-27 2013-12-31 Intel Corporation Low temperature deposition and ultra fast annealing of integrated circuit thin film capacitor
US8003479B2 (en) 2006-03-27 2011-08-23 Intel Corporation Low temperature deposition and ultra fast annealing of integrated circuit thin film capacitor
US7416938B2 (en) * 2006-03-31 2008-08-26 Intel Corporation Inkjet patterning for thin-film capacitor fabrication, thin-film capacitors fabricated thereby, and systems containing same
US20070242414A1 (en) * 2006-03-31 2007-10-18 Huankiat Seh Inkjet patterning for thin-film capacitor fabrication, thin-film capacitors fabricated thereby, and systems containing same
US8143697B2 (en) 2006-06-29 2012-03-27 Intel Corporation Method, apparatus, and system for low temperature deposition and irradiation annealing of thin film capacitor
US20090273057A1 (en) * 2006-06-29 2009-11-05 Huankiat Seh Method, apparatus, and system for low temperature deposition and irradiation annealing of thin film capacitor
US20080003764A1 (en) * 2006-06-30 2008-01-03 Huankiat Seh Method of providing a pre-patterned high-k dielectric film
US7435675B2 (en) * 2006-06-30 2008-10-14 Intel Corporation Method of providing a pre-patterned high-k dielectric film
US7553738B2 (en) * 2006-12-11 2009-06-30 Intel Corporation Method of fabricating a microelectronic device including embedded thin film capacitor by over-etching thin film capacitor bottom electrode and microelectronic device made according to the method
US20080137263A1 (en) * 2006-12-11 2008-06-12 Yongki Min Method of fabricating a microelectronic device includling embedded thin film capacitor by over-etching thin film capacitor bottom electrode and microelectronic device made according to the method
US20080145622A1 (en) * 2006-12-14 2008-06-19 Roy Mihir K Polymer-based integrated thin film capacitors, packages containing same and methods related thereto
US8420978B2 (en) 2007-01-18 2013-04-16 The Board Of Trustees Of The University Of Illinois High throughput, low cost dual-mode patterning method for large area substrates
WO2008088587A1 (en) * 2007-01-18 2008-07-24 The Board Of Trustees Of The University Of Illinois High throughput, low cost dual-mode patterning method for large area substrates
US20080239620A1 (en) * 2007-03-30 2008-10-02 Yongki Min Carbon nanotube coated capacitor electrodes
US7710709B2 (en) 2007-03-30 2010-05-04 Intel Corporation Carbon nanotube coated capacitor electrodes
US20080251877A1 (en) * 2007-04-12 2008-10-16 Kanti Jain Methods for fabricating complex micro and nanoscale structures and electronic devices and components made by the same
US8003300B2 (en) 2007-04-12 2011-08-23 The Board Of Trustees Of The University Of Illinois Methods for fabricating complex micro and nanoscale structures and electronic devices and components made by the same
US8652763B2 (en) 2007-07-16 2014-02-18 The Board Of Trustees Of The University Of Illinois Method for fabricating dual damascene profiles using sub pixel-voting lithography and devices made by same
US20090023098A1 (en) * 2007-07-16 2009-01-22 Kanti Jain Method for fabricating dual damascene profiles using sub pixel-voting lithography and devices made by same
US8546067B2 (en) 2008-03-21 2013-10-01 The Board Of Trustees Of The University Of Illinois Material assisted laser ablation
US20090239042A1 (en) * 2008-03-21 2009-09-24 Kanti Jain Material Assisted Laser Ablation
US8187795B2 (en) 2008-12-09 2012-05-29 The Board Of Trustees Of The University Of Illinois Patterning methods for stretchable structures
US20100143848A1 (en) * 2008-12-09 2010-06-10 Kanti Jain Patterning methods for stretchable structures
US20110147917A1 (en) * 2009-12-22 2011-06-23 Fairchild Semiconductor Corporation Integrated circuit package with embedded components
US8304888B2 (en) * 2009-12-22 2012-11-06 Fairchild Semiconductor Corporation Integrated circuit package with embedded components
KR101733608B1 (en) 2014-09-18 2017-05-10 인텔 코포레이션 Integration of embedded thin film capacitors in package substrates
US20160150649A1 (en) * 2014-11-25 2016-05-26 Hsien-Ping Peng Integrated passive module, semiconductor device and manufacturing method thereof
WO2018199990A1 (en) * 2017-04-28 2018-11-01 Intel Corporation Substrate integrated inductor

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