DE69317945D1 - Hochfrequenz-Halbleiterbauelement - Google Patents

Hochfrequenz-Halbleiterbauelement

Info

Publication number
DE69317945D1
DE69317945D1 DE69317945T DE69317945T DE69317945D1 DE 69317945 D1 DE69317945 D1 DE 69317945D1 DE 69317945 T DE69317945 T DE 69317945T DE 69317945 T DE69317945 T DE 69317945T DE 69317945 D1 DE69317945 D1 DE 69317945D1
Authority
DE
Germany
Prior art keywords
semiconductor device
high frequency
frequency semiconductor
semiconductor
frequency
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69317945T
Other languages
English (en)
Other versions
DE69317945T2 (de
Inventor
Yoshihiro Notani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Application granted granted Critical
Publication of DE69317945D1 publication Critical patent/DE69317945D1/de
Publication of DE69317945T2 publication Critical patent/DE69317945T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Wire Bonding (AREA)
  • Lead Frames For Integrated Circuits (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
DE69317945T 1992-07-07 1993-06-17 Hochfrequenz-Halbleiterbauelement Expired - Fee Related DE69317945T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4206106A JPH0629428A (ja) 1992-07-07 1992-07-07 半導体装置

Publications (2)

Publication Number Publication Date
DE69317945D1 true DE69317945D1 (de) 1998-05-20
DE69317945T2 DE69317945T2 (de) 1998-12-03

Family

ID=16517904

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69317945T Expired - Fee Related DE69317945T2 (de) 1992-07-07 1993-06-17 Hochfrequenz-Halbleiterbauelement

Country Status (4)

Country Link
US (1) US5426319A (de)
EP (1) EP0578028B1 (de)
JP (1) JPH0629428A (de)
DE (1) DE69317945T2 (de)

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US5952709A (en) * 1995-12-28 1999-09-14 Kyocera Corporation High-frequency semiconductor device and mounted structure thereof
US5773887A (en) * 1996-06-03 1998-06-30 Motorola, Inc. High frequency semiconductor component
US5783857A (en) * 1996-07-25 1998-07-21 The Whitaker Corporation Integrated circuit package
US6002375A (en) * 1997-09-02 1999-12-14 Motorola, Inc. Multi-substrate radio-frequency circuit
US6064286A (en) * 1998-07-31 2000-05-16 The Whitaker Corporation Millimeter wave module with an interconnect from an interior cavity
TW452953B (en) * 2000-05-22 2001-09-01 Via Tech Inc BGA chip package capable of decreasing its impedance when operating at high frequency
US6627992B2 (en) * 2001-05-21 2003-09-30 Xytrans, Inc. Millimeter wave (MMW) transceiver module with transmitter, receiver and local oscillator frequency multiplier surface mounted chip set
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DE69317945T2 (de) 1998-12-03
EP0578028A1 (de) 1994-01-12
US5426319A (en) 1995-06-20
JPH0629428A (ja) 1994-02-04
EP0578028B1 (de) 1998-04-15

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