DE69316677T2 - Verfahren zur Herstellung einer Halbleiteranordnung mit durch Implantation mit einer Kohlenstoff-Halogenverbindung erhaltenem Heteroübergang - Google Patents

Verfahren zur Herstellung einer Halbleiteranordnung mit durch Implantation mit einer Kohlenstoff-Halogenverbindung erhaltenem Heteroübergang

Info

Publication number
DE69316677T2
DE69316677T2 DE69316677T DE69316677T DE69316677T2 DE 69316677 T2 DE69316677 T2 DE 69316677T2 DE 69316677 T DE69316677 T DE 69316677T DE 69316677 T DE69316677 T DE 69316677T DE 69316677 T2 DE69316677 T2 DE 69316677T2
Authority
DE
Germany
Prior art keywords
implantation
carbon
manufacturing
semiconductor device
halogen compound
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69316677T
Other languages
English (en)
Other versions
DE69316677D1 (de
Inventor
Doeke Jolt Oostra
Jozef J M Ottenheim
Jarig Politiek
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Koninklijke Philips Electronics NV
Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips Electronics NV, Philips Electronics NV filed Critical Koninklijke Philips Electronics NV
Application granted granted Critical
Publication of DE69316677D1 publication Critical patent/DE69316677D1/de
Publication of DE69316677T2 publication Critical patent/DE69316677T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/2658—Bombardment with radiation with high-energy radiation producing ion implantation of a molecular ion, e.g. decaborane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234—Bipolar junction transistors [BJT]
    • H01L29/66242—Heterojunction transistors [HBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/737—Hetero-junction transistors
    • H01L29/7371—Vertical transistors
    • H01L29/7375—Vertical transistors having an emitter comprising one or more non-monocrystalline elements of group IV, e.g. amorphous silicon, alloys comprising group IV elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Manufacturing & Machinery (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Bipolar Transistors (AREA)
DE69316677T 1992-07-24 1993-07-20 Verfahren zur Herstellung einer Halbleiteranordnung mit durch Implantation mit einer Kohlenstoff-Halogenverbindung erhaltenem Heteroübergang Expired - Fee Related DE69316677T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP92202275 1992-07-24

Publications (2)

Publication Number Publication Date
DE69316677D1 DE69316677D1 (de) 1998-03-05
DE69316677T2 true DE69316677T2 (de) 1998-07-30

Family

ID=8210804

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69316677T Expired - Fee Related DE69316677T2 (de) 1992-07-24 1993-07-20 Verfahren zur Herstellung einer Halbleiteranordnung mit durch Implantation mit einer Kohlenstoff-Halogenverbindung erhaltenem Heteroübergang

Country Status (4)

Country Link
US (1) US5354696A (de)
EP (1) EP0581369B1 (de)
JP (1) JP3405766B2 (de)
DE (1) DE69316677T2 (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5863831A (en) * 1995-08-14 1999-01-26 Advanced Materials Engineering Research, Inc. Process for fabricating semiconductor device with shallow p-type regions using dopant compounds containing elements of high solid solubility
DE19652423A1 (de) * 1996-12-09 1998-06-10 Inst Halbleiterphysik Gmbh Silizium-Germanium-Heterobipolartransistor und Verfahren zur Herstellung der epitaktischen Einzelschichten eines derartigen Transistors
US6750484B2 (en) 1996-12-09 2004-06-15 Nokia Corporation Silicon germanium hetero bipolar transistor
DE19755979A1 (de) 1996-12-09 1999-06-10 Inst Halbleiterphysik Gmbh Silizium-Germanium-Heterobipolartransistor
US5891791A (en) * 1997-05-27 1999-04-06 Micron Technology, Inc. Contamination free source for shallow low energy junction implants
US6452338B1 (en) 1999-12-13 2002-09-17 Semequip, Inc. Electron beam ion source with integral low-temperature vaporizer
US6774019B2 (en) * 2002-05-17 2004-08-10 International Business Machines Corporation Incorporation of an impurity into a thin film
US6995051B1 (en) * 2004-10-28 2006-02-07 International Business Machines Corporation Irradiation assisted reactive ion etching
US7642150B2 (en) * 2006-11-08 2010-01-05 Varian Semiconductor Equipment Associates, Inc. Techniques for forming shallow junctions
EP3300961A1 (de) 2008-09-30 2018-04-04 TRW Airbag Systems GmbH Gasgenerator, verfahren zu seiner herstellung sowie modul mit gasgenerator
CN104837768B (zh) 2012-10-12 2017-05-17 宾夕法尼亚州研究基金会 微米尺寸的互连Si‑C复合材料的合成
JP5920275B2 (ja) 2013-04-08 2016-05-18 株式会社デンソー 炭化珪素半導体装置およびその製造方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4559696A (en) * 1984-07-11 1985-12-24 Fairchild Camera & Instrument Corporation Ion implantation to increase emitter energy gap in bipolar transistors
JPS6197818A (ja) * 1984-10-19 1986-05-16 Canon Inc 堆積膜形成法
US4992839A (en) * 1987-03-23 1991-02-12 Canon Kabushiki Kaisha Field effect thin film transistor having a semiconductor layer formed from a polycrystal silicon film containing hydrogen atom and halogen atom and process for the preparation of the same
EP0350845A3 (de) * 1988-07-12 1991-05-29 Seiko Epson Corporation Halbleiterbauelement mit dotierten Gebieten und Verfahren zu seiner Herstellung
JP2860138B2 (ja) * 1989-03-29 1999-02-24 キヤノン株式会社 半導体装置およびこれを用いた光電変換装置
JPH0828379B2 (ja) * 1990-05-28 1996-03-21 株式会社東芝 半導体装置の製造方法
JPH0496273A (ja) * 1990-08-03 1992-03-27 Sharp Corp 半導体装置の製造方法

Also Published As

Publication number Publication date
US5354696A (en) 1994-10-11
JPH06163445A (ja) 1994-06-10
EP0581369B1 (de) 1998-01-28
JP3405766B2 (ja) 2003-05-12
DE69316677D1 (de) 1998-03-05
EP0581369A1 (de) 1994-02-02

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: KONINKLIJKE PHILIPS ELECTRONICS N.V., EINDHOVEN, N

8320 Willingness to grant licences declared (paragraph 23)
8339 Ceased/non-payment of the annual fee