DE69313310T2 - Halbleiterdruckwandler und Herstellungsverfahren dazu - Google Patents

Halbleiterdruckwandler und Herstellungsverfahren dazu

Info

Publication number
DE69313310T2
DE69313310T2 DE69313310T DE69313310T DE69313310T2 DE 69313310 T2 DE69313310 T2 DE 69313310T2 DE 69313310 T DE69313310 T DE 69313310T DE 69313310 T DE69313310 T DE 69313310T DE 69313310 T2 DE69313310 T2 DE 69313310T2
Authority
DE
Germany
Prior art keywords
manufacturing process
pressure transducer
semiconductor pressure
process therefor
therefor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69313310T
Other languages
English (en)
Other versions
DE69313310D1 (de
Inventor
Yoshiharu Takahashi
Tetsuya Hirose
Hiroshi Otani
Seiji Takemura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP4225942A external-priority patent/JPH05299671A/ja
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Application granted granted Critical
Publication of DE69313310D1 publication Critical patent/DE69313310D1/de
Publication of DE69313310T2 publication Critical patent/DE69313310T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
    • G01L19/0061—Electrical connection means
    • G01L19/0084—Electrical connection means to the outside of the housing
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
    • G01L19/14—Housings
    • G01L19/147—Details about the mounting of the sensor to support or covering means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/1015—Shape
    • H01L2924/10155—Shape being other than a cuboid
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H01L2924/1815—Shape
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49082—Resistor making
    • Y10T29/49103—Strain gauge making
DE69313310T 1992-01-13 1993-01-13 Halbleiterdruckwandler und Herstellungsverfahren dazu Expired - Fee Related DE69313310T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP373092 1992-01-13
JP3200892 1992-02-19
JP4225942A JPH05299671A (ja) 1992-01-13 1992-08-25 半導体圧力センサ及びその製造方法

Publications (2)

Publication Number Publication Date
DE69313310D1 DE69313310D1 (de) 1997-10-02
DE69313310T2 true DE69313310T2 (de) 1998-02-19

Family

ID=27275949

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69313310T Expired - Fee Related DE69313310T2 (de) 1992-01-13 1993-01-13 Halbleiterdruckwandler und Herstellungsverfahren dazu

Country Status (3)

Country Link
US (1) US5333505A (de)
EP (1) EP0552017B1 (de)
DE (1) DE69313310T2 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102005012157B4 (de) * 2004-03-17 2017-08-24 Denso Corporation Kompakter Drucksensor mit hoher Korrosionsbeständigkeit und hoher Genauigkeit

Families Citing this family (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2716834B1 (fr) * 1994-03-02 1996-04-26 Sagep Dispositif d'enrobage d'un capteur.
US5559280A (en) * 1994-11-14 1996-09-24 Eaton Corporation Combustion chamber pressure transducer and method of making same
JP2000356561A (ja) * 1999-04-14 2000-12-26 Denso Corp 半導体歪みセンサ
US6401545B1 (en) 2000-01-25 2002-06-11 Motorola, Inc. Micro electro-mechanical system sensor with selective encapsulation and method therefor
US7225670B2 (en) 2000-05-18 2007-06-05 Seiko Epson Corporation Mounting structure, module, and liquid container
US6769319B2 (en) 2001-07-09 2004-08-03 Freescale Semiconductor, Inc. Component having a filter
JP2003247903A (ja) 2002-02-21 2003-09-05 Denso Corp 圧力センサ
WO2004068096A1 (ja) * 2003-01-30 2004-08-12 Fujikura Ltd. 半導体圧力センサ及びその製造方法
US7318351B2 (en) * 2005-10-05 2008-01-15 Honeywell International Inc. Pressure sensor
US20080277747A1 (en) * 2007-05-08 2008-11-13 Nazir Ahmad MEMS device support structure for sensor packaging
US8084849B2 (en) * 2007-12-12 2011-12-27 Stats Chippac Ltd. Integrated circuit package system with offset stacking
US8536692B2 (en) * 2007-12-12 2013-09-17 Stats Chippac Ltd. Mountable integrated circuit package system with mountable integrated circuit die
US7781261B2 (en) * 2007-12-12 2010-08-24 Stats Chippac Ltd. Integrated circuit package system with offset stacking and anti-flash structure
US7985628B2 (en) * 2007-12-12 2011-07-26 Stats Chippac Ltd. Integrated circuit package system with interconnect lock
US20090243069A1 (en) * 2008-03-26 2009-10-01 Zigmund Ramirez Camacho Integrated circuit package system with redistribution
US9293385B2 (en) * 2008-07-30 2016-03-22 Stats Chippac Ltd. RDL patterning with package on package system
US8643127B2 (en) * 2008-08-21 2014-02-04 S3C, Inc. Sensor device packaging
EP2224218B1 (de) * 2009-02-25 2018-11-28 Sensirion Automotive Solutions AG Sensor in einer geformten Verpackung und Herstellungsverfahren dafür
US7775119B1 (en) * 2009-03-03 2010-08-17 S3C, Inc. Media-compatible electrically isolated pressure sensor for high temperature applications
JP4968371B2 (ja) * 2010-06-30 2012-07-04 大日本印刷株式会社 センサデバイスの製造方法及びセンサデバイス
CH703737A1 (de) * 2010-09-13 2012-03-15 Kistler Holding Ag Drucksensor mit piezoresistivem sensorchip-element.
US9487388B2 (en) * 2012-06-21 2016-11-08 Nextinput, Inc. Ruggedized MEMS force die
US9032818B2 (en) 2012-07-05 2015-05-19 Nextinput, Inc. Microelectromechanical load sensor and methods of manufacturing the same
JP5973357B2 (ja) * 2013-02-05 2016-08-23 株式会社鷺宮製作所 圧力検知ユニット及び圧力検知ユニットの製造方法
US9902611B2 (en) 2014-01-13 2018-02-27 Nextinput, Inc. Miniaturized and ruggedized wafer level MEMs force sensors
CN107848788B (zh) 2015-06-10 2023-11-24 触控解决方案股份有限公司 具有容差沟槽的加固的晶圆级mems力传感器
CN116907693A (zh) 2017-02-09 2023-10-20 触控解决方案股份有限公司 集成数字力传感器和相关制造方法
WO2018148510A1 (en) 2017-02-09 2018-08-16 Nextinput, Inc. Integrated piezoresistive and piezoelectric fusion force sensor
CN111448446B (zh) 2017-07-19 2022-08-30 触控解决方案股份有限公司 在mems力传感器中的应变传递堆叠
WO2019023309A1 (en) 2017-07-25 2019-01-31 Nextinput, Inc. FORCE SENSOR AND INTEGRATED FINGERPRINTS
US11243126B2 (en) 2017-07-27 2022-02-08 Nextinput, Inc. Wafer bonded piezoresistive and piezoelectric force sensor and related methods of manufacture
WO2019079420A1 (en) 2017-10-17 2019-04-25 Nextinput, Inc. SHIFT TEMPERATURE COEFFICIENT COMPENSATION FOR FORCE SENSOR AND STRAIN GAUGE
WO2019090057A1 (en) 2017-11-02 2019-05-09 Nextinput, Inc. Sealed force sensor with etch stop layer
US11874185B2 (en) 2017-11-16 2024-01-16 Nextinput, Inc. Force attenuator for force sensor
US10962427B2 (en) 2019-01-10 2021-03-30 Nextinput, Inc. Slotted MEMS force sensor

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5798830A (en) * 1980-12-12 1982-06-19 Hitachi Ltd Semiconductor pressure sensor
DE3376760D1 (en) * 1983-11-10 1988-06-30 Kristal Instr Ag Transducer element, method for its manufacture and its use in a pressure pick-up device
JPS61171173A (ja) * 1985-01-25 1986-08-01 Hitachi Ltd 真空基準圧形半導体圧力変換器
US4656454A (en) * 1985-04-24 1987-04-07 Honeywell Inc. Piezoresistive pressure transducer with elastomeric seals
JPS62144368A (ja) * 1985-12-19 1987-06-27 Nec Corp 半導体式圧力センサの保護膜
JPH061226B2 (ja) * 1986-05-07 1994-01-05 日本電装株式会社 半導体圧力センサ
JPS6318231A (ja) * 1986-07-10 1988-01-26 Shimon Kk 半導体圧力センサ
JPS6375537A (ja) * 1986-09-18 1988-04-05 Toshiba Corp 自動化学分析装置
US4823605A (en) * 1987-03-18 1989-04-25 Siemens Aktiengesellschaft Semiconductor pressure sensor with casing and method for its manufacture
JPH01217231A (ja) * 1988-02-26 1989-08-30 Fujikura Ltd 半導体圧力センサ
US4930929A (en) * 1989-09-26 1990-06-05 Honeywell Inc. Glass tube/stainless steel header interface for pressure sensor
JP2719448B2 (ja) * 1991-01-24 1998-02-25 三菱電機株式会社 半導体圧力検出装置
JPH04258176A (ja) * 1991-02-12 1992-09-14 Mitsubishi Electric Corp 半導体圧力センサ

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102005012157B4 (de) * 2004-03-17 2017-08-24 Denso Corporation Kompakter Drucksensor mit hoher Korrosionsbeständigkeit und hoher Genauigkeit

Also Published As

Publication number Publication date
EP0552017A2 (de) 1993-07-21
EP0552017B1 (de) 1997-08-27
EP0552017A3 (de) 1994-02-09
DE69313310D1 (de) 1997-10-02
US5333505A (en) 1994-08-02

Similar Documents

Publication Publication Date Title
DE69313310D1 (de) Halbleiterdruckwandler und Herstellungsverfahren dazu
DE59601335D1 (de) Halbleiterbauelement und Herstellverfahren
DE69430511T2 (de) Halbleiteranordnung und Herstellungverfahren
DE69522514T2 (de) Halbleiteranordnung und Herstellungsverfahren
DE69527330D1 (de) Halbleiteranordnung und Herstellungsverfahren
DE69526539T2 (de) Halbleiteranordnung und Herstellungsverfahren
DE69525795D1 (de) Halbleiteranordnung und Herstellungsverfahren
DE69430829D1 (de) Mehrchipmodul und Herstellungsverfahren dafür
DE69424067T2 (de) Ultraschallwandlerarray und Herstellungsverfahren
DE69430513D1 (de) Harzvergossenes Halbleiterbauteil und dessen Herstellungsverfahren
DE69435045D1 (de) Halbleiter-Anordnung und Herstellungsverfahren dafür
DE69627645D1 (de) Integrierter piezoresistiver Druckwandler und Herstellungsverfahren dazu
DE69534938D1 (de) Photovoltaisches Bauelement und Herstellungsverfahren
DE69415068D1 (de) Mikromotor und Herstellungsverfahren desselben
DE69934841D1 (de) Druckwandler und Herstellungsverfahren
DE69435205D1 (de) Dünne Halbleitervorrichtung und Herstellungsverfahren
DE69429906D1 (de) Halbleiterstruktur und Herstellungsverfahren
DE69413602D1 (de) Halbleiteranordnung und Herstellungsverfahren
DE69012196T2 (de) Halbleiterdruckwandler und dessen Herstellungsverfahren.
DE69526543T2 (de) Harzvergossenes Halbleiterbauteil und dessen Herstellungsverfahren
DE69325343T2 (de) Halbleiteranordnung und Herstellungsverfahren dafür
DE69403395D1 (de) Kapazitiver Druckwandler und Herstellungsverfahren dazu
DE69420944D1 (de) Halbleitervorrichtung und herstellungsverfahren
DE69504262D1 (de) Halbleiterlaser und dessen Herstellungsverfahren
DE69209272D1 (de) Zerbrechliche Druckentlastungsvorrichtung und Herstellungsverfahren

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee