DE69311209T2 - Verfahren und Vorrichtung zum Beheben von Kurzschlussbereichen in Halbleiterelementen - Google Patents

Verfahren und Vorrichtung zum Beheben von Kurzschlussbereichen in Halbleiterelementen

Info

Publication number
DE69311209T2
DE69311209T2 DE69311209T DE69311209T DE69311209T2 DE 69311209 T2 DE69311209 T2 DE 69311209T2 DE 69311209 T DE69311209 T DE 69311209T DE 69311209 T DE69311209 T DE 69311209T DE 69311209 T2 DE69311209 T2 DE 69311209T2
Authority
DE
Germany
Prior art keywords
conductor layer
forming
electric conductor
substrate
transparent conductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69311209T
Other languages
English (en)
Other versions
DE69311209D1 (de
Inventor
Takafumi Midorikawa
Tsutomu Murakami
Takahiro Mori
Hirofumi Ichinose
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Publication of DE69311209D1 publication Critical patent/DE69311209D1/de
Application granted granted Critical
Publication of DE69311209T2 publication Critical patent/DE69311209T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
    • H01L31/208—Particular post-treatment of the devices, e.g. annealing, short-circuit elimination
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S136/00—Batteries: thermoelectric and photoelectric
    • Y10S136/29—Testing, calibrating, treating, e.g. aging

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Photovoltaic Devices (AREA)
  • Bipolar Transistors (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Die Bonding (AREA)
DE69311209T 1992-07-01 1993-06-30 Verfahren und Vorrichtung zum Beheben von Kurzschlussbereichen in Halbleiterelementen Expired - Fee Related DE69311209T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4197828A JP2686022B2 (ja) 1992-07-01 1992-07-01 光起電力素子の製造方法

Publications (2)

Publication Number Publication Date
DE69311209D1 DE69311209D1 (de) 1997-07-10
DE69311209T2 true DE69311209T2 (de) 1998-01-15

Family

ID=16381021

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69311209T Expired - Fee Related DE69311209T2 (de) 1992-07-01 1993-06-30 Verfahren und Vorrichtung zum Beheben von Kurzschlussbereichen in Halbleiterelementen

Country Status (7)

Country Link
US (1) US6132585A (de)
EP (1) EP0577108B1 (de)
JP (1) JP2686022B2 (de)
KR (1) KR970005153B1 (de)
AT (1) ATE154167T1 (de)
AU (1) AU667718B2 (de)
DE (1) DE69311209T2 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8575476B2 (en) 2007-07-13 2013-11-05 Omron Corporation CIS solar cell and method for manufacturing the same

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US6274805B1 (en) * 1997-05-07 2001-08-14 Asahi Kasei Kabushiki Kaisha Solar cell and manufacturing method thereof
JP2001230341A (ja) * 2000-02-18 2001-08-24 Hitachi Ltd 半導体装置
WO2002095810A1 (en) * 2001-05-21 2002-11-28 Molecular Electronics Corporation Method of repairing molecular electronic defects
JP2003069055A (ja) * 2001-06-13 2003-03-07 Sharp Corp 太陽電池セルとその製造方法
US7109517B2 (en) * 2001-11-16 2006-09-19 Zaidi Saleem H Method of making an enhanced optical absorption and radiation tolerance in thin-film solar cells and photodetectors
JP2004063933A (ja) 2002-07-31 2004-02-26 Canon Inc 半導体素子及び半導体素子の製造方法
AU2003295880A1 (en) * 2002-11-27 2004-06-23 University Of Toledo, The Integrated photoelectrochemical cell and system having a liquid electrolyte
WO2004049052A1 (ja) * 2002-11-28 2004-06-10 Konica Minolta Holdings, Inc. 表示素子、表示装置及び表示装置の製造方法
US7667133B2 (en) * 2003-10-29 2010-02-23 The University Of Toledo Hybrid window layer for photovoltaic cells
WO2005101510A2 (en) * 2004-04-16 2005-10-27 The University Of Toledo Light-assisted electrochemical shunt passivation for photovoltaic devices
US20060089292A1 (en) * 2004-10-22 2006-04-27 Thomas Wirz Methods for VOC reduced pretreatment of substrates and detection by luminescence
WO2006062510A1 (en) * 2004-12-07 2006-06-15 Ahbee 2, Lp Non contact method and apparatus for measurement of sheet resistance of p-n junctions
WO2006110613A2 (en) * 2005-04-11 2006-10-19 The University Of Toledo Integrated photovoltaic-electrolysis cell
US20070131270A1 (en) * 2005-07-14 2007-06-14 Russell Gaudiana Window with photovoltaic cell
US7772485B2 (en) * 2005-07-14 2010-08-10 Konarka Technologies, Inc. Polymers with low band gaps and high charge mobility
US20070267055A1 (en) * 2005-07-14 2007-11-22 Konarka Technologies, Inc. Tandem Photovoltaic Cells
US8158881B2 (en) * 2005-07-14 2012-04-17 Konarka Technologies, Inc. Tandem photovoltaic cells
US20070181179A1 (en) 2005-12-21 2007-08-09 Konarka Technologies, Inc. Tandem photovoltaic cells
US7781673B2 (en) * 2005-07-14 2010-08-24 Konarka Technologies, Inc. Polymers with low band gaps and high charge mobility
US20080006324A1 (en) * 2005-07-14 2008-01-10 Konarka Technologies, Inc. Tandem Photovoltaic Cells
JP2007189199A (ja) 2005-12-12 2007-07-26 Tdk Corp キャパシタおよびその製造方法
US20080053518A1 (en) * 2006-09-05 2008-03-06 Pen-Hsiu Chang Transparent solar cell system
US8008424B2 (en) 2006-10-11 2011-08-30 Konarka Technologies, Inc. Photovoltaic cell with thiazole-containing polymer
US8008421B2 (en) 2006-10-11 2011-08-30 Konarka Technologies, Inc. Photovoltaic cell with silole-containing polymer
KR100828254B1 (ko) * 2006-10-27 2008-05-07 미리넷솔라 주식회사 태양전지용 실리콘 기판의 제조 공정
US20100304512A1 (en) * 2007-11-30 2010-12-02 University Of Toledo System for Diagnosis and Treatment of Photovoltaic and Other Semiconductor Devices
JP5062684B2 (ja) * 2008-02-13 2012-10-31 シャープ株式会社 薄膜光電変換モジュールの製造方法および製造装置
JP2011513951A (ja) * 2008-02-21 2011-04-28 コナルカ テクノロジーズ インコーポレイテッド タンデム型光電池
US20100043863A1 (en) 2008-03-20 2010-02-25 Miasole Interconnect assembly
US20110197947A1 (en) 2008-03-20 2011-08-18 Miasole Wire network for interconnecting photovoltaic cells
US8912429B2 (en) * 2008-03-20 2014-12-16 Hanergy Holding Group Ltd. Interconnect assembly
WO2009120974A2 (en) * 2008-03-28 2009-10-01 University Of Toledo System for selectively filling pin holes, weak shunts and/or scribe lines in photovoltaic devices and photovoltaic cells made thereby
GB2459651A (en) * 2008-04-28 2009-11-04 Quantasol Ltd Concentrator photovoltaic cell
JP2010021437A (ja) * 2008-07-11 2010-01-28 Ulvac Japan Ltd 太陽電池の製造装置およびその製造方法
US8455606B2 (en) * 2008-08-07 2013-06-04 Merck Patent Gmbh Photoactive polymers
US8318239B2 (en) * 2008-11-17 2012-11-27 Solopower, Inc. Method and apparatus for detecting and passivating defects in thin film solar cells
US7979969B2 (en) * 2008-11-17 2011-07-19 Solopower, Inc. Method of detecting and passivating a defect in a solar cell
US8318240B2 (en) * 2008-11-17 2012-11-27 Solopower, Inc. Method and apparatus to remove a segment of a thin film solar cell structure for efficiency improvement
US20100264035A1 (en) * 2009-04-15 2010-10-21 Solopower, Inc. Reel-to-reel plating of conductive grids for flexible thin film solar cells
JP5528929B2 (ja) * 2009-08-31 2014-06-25 三井化学東セロ株式会社 測定方法、太陽電池モジュールの製造方法、太陽電池モジュールおよび太陽電池モジュールの評価方法
US8356640B1 (en) 2010-01-14 2013-01-22 Mia Solé Apparatuses and methods for fabricating wire current collectors and interconnects for solar cells
US9061344B1 (en) 2010-05-26 2015-06-23 Apollo Precision (Fujian) Limited Apparatuses and methods for fabricating wire current collectors and interconnects for solar cells
US10026859B2 (en) 2010-10-04 2018-07-17 Beijing Apollo Ding Rong Solar Technology Co., Ltd. Small gauge wire solar cell interconnect
US8951824B1 (en) 2011-04-08 2015-02-10 Apollo Precision (Fujian) Limited Adhesives for attaching wire network to photovoltaic cells
US9151597B2 (en) 2012-02-13 2015-10-06 First Solar, Inc. In situ substrate detection for a processing system using infrared detection
JP6049556B2 (ja) 2013-07-01 2016-12-21 株式会社東芝 太陽電池、太陽電池モジュール及び太陽電池の製造方法
US9564270B2 (en) * 2013-12-27 2017-02-07 Tdk Corporation Thin film capacitor
JP6446877B2 (ja) 2014-07-16 2019-01-09 Tdk株式会社 薄膜キャパシタ
JP6365216B2 (ja) 2014-10-15 2018-08-01 Tdk株式会社 薄膜キャパシタ
JP6641872B2 (ja) 2015-10-15 2020-02-05 Tdk株式会社 電子デバイスシート
WO2018155938A1 (en) * 2017-02-24 2018-08-30 Lg Electronics Inc. Compound semiconductor solar cell and method of manufacturing the same
WO2019061159A1 (zh) * 2017-09-28 2019-04-04 深圳市大疆创新科技有限公司 定位故障光伏板的方法、设备及无人机
US11430974B2 (en) * 2019-05-17 2022-08-30 Ppg Industries Ohio, Inc. System for roll-to-roll electrocoating of battery electrode coatings onto a foil substrate

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US4197141A (en) * 1978-01-31 1980-04-08 Massachusetts Institute Of Technology Method for passivating imperfections in semiconductor materials
US4451970A (en) * 1982-10-21 1984-06-05 Energy Conversion Devices, Inc. System and method for eliminating short circuit current paths in photovoltaic devices
US4464823A (en) * 1982-10-21 1984-08-14 Energy Conversion Devices, Inc. Method for eliminating short and latent short circuit current paths in photovoltaic devices
JPS6085577A (ja) * 1983-10-17 1985-05-15 Fuji Xerox Co Ltd 薄膜光電変換素子の製造方法
US4729970A (en) * 1986-09-15 1988-03-08 Energy Conversion Devices, Inc. Conversion process for passivating short circuit current paths in semiconductor devices
US4749454A (en) * 1986-11-17 1988-06-07 Solarex Corporation Method of removing electrical shorts and shunts from a thin-film semiconductor device
JPH04266068A (ja) * 1991-02-20 1992-09-22 Canon Inc 光電変換素子及びその製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8575476B2 (en) 2007-07-13 2013-11-05 Omron Corporation CIS solar cell and method for manufacturing the same

Also Published As

Publication number Publication date
EP0577108B1 (de) 1997-06-04
ATE154167T1 (de) 1997-06-15
EP0577108A1 (de) 1994-01-05
US6132585A (en) 2000-10-17
KR940006294A (ko) 1994-03-23
DE69311209D1 (de) 1997-07-10
JPH0621493A (ja) 1994-01-28
KR970005153B1 (ko) 1997-04-12
AU667718B2 (en) 1996-04-04
JP2686022B2 (ja) 1997-12-08
AU4161093A (en) 1994-01-06

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee