ATE154167T1 - Verfahren und vorrichtung zum beheben von kurzschlussbereichen in halbleiterelementen - Google Patents

Verfahren und vorrichtung zum beheben von kurzschlussbereichen in halbleiterelementen

Info

Publication number
ATE154167T1
ATE154167T1 AT93110466T AT93110466T ATE154167T1 AT E154167 T1 ATE154167 T1 AT E154167T1 AT 93110466 T AT93110466 T AT 93110466T AT 93110466 T AT93110466 T AT 93110466T AT E154167 T1 ATE154167 T1 AT E154167T1
Authority
AT
Austria
Prior art keywords
conductor layer
forming
electric conductor
substrate
transparent conductor
Prior art date
Application number
AT93110466T
Other languages
English (en)
Inventor
Takafumi Midorikawa
Tsutomu Murakami
Takahiro Mori
Hirofumi Ichinose
Original Assignee
Canon Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Kk filed Critical Canon Kk
Application granted granted Critical
Publication of ATE154167T1 publication Critical patent/ATE154167T1/de

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042PV modules or arrays of single PV cells
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/20Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
    • H01L31/208Particular post-treatment of the devices, e.g. annealing, short-circuit elimination
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S136/00Batteries: thermoelectric and photoelectric
    • Y10S136/29Testing, calibrating, treating, e.g. aging

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Photovoltaic Devices (AREA)
  • Bipolar Transistors (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Die Bonding (AREA)
AT93110466T 1992-07-01 1993-06-30 Verfahren und vorrichtung zum beheben von kurzschlussbereichen in halbleiterelementen ATE154167T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4197828A JP2686022B2 (ja) 1992-07-01 1992-07-01 光起電力素子の製造方法

Publications (1)

Publication Number Publication Date
ATE154167T1 true ATE154167T1 (de) 1997-06-15

Family

ID=16381021

Family Applications (1)

Application Number Title Priority Date Filing Date
AT93110466T ATE154167T1 (de) 1992-07-01 1993-06-30 Verfahren und vorrichtung zum beheben von kurzschlussbereichen in halbleiterelementen

Country Status (7)

Country Link
US (1) US6132585A (de)
EP (1) EP0577108B1 (de)
JP (1) JP2686022B2 (de)
KR (1) KR970005153B1 (de)
AT (1) ATE154167T1 (de)
AU (1) AU667718B2 (de)
DE (1) DE69311209T2 (de)

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JP2001230341A (ja) * 2000-02-18 2001-08-24 Hitachi Ltd 半導体装置
WO2002095810A1 (en) * 2001-05-21 2002-11-28 Molecular Electronics Corporation Method of repairing molecular electronic defects
JP2003069055A (ja) * 2001-06-13 2003-03-07 Sharp Corp 太陽電池セルとその製造方法
US7109517B2 (en) * 2001-11-16 2006-09-19 Zaidi Saleem H Method of making an enhanced optical absorption and radiation tolerance in thin-film solar cells and photodetectors
JP2004063933A (ja) 2002-07-31 2004-02-26 Canon Inc 半導体素子及び半導体素子の製造方法
AU2003295880A1 (en) * 2002-11-27 2004-06-23 University Of Toledo, The Integrated photoelectrochemical cell and system having a liquid electrolyte
KR100973395B1 (ko) * 2002-11-28 2010-07-30 코니카 미놀타 홀딩스 가부시키가이샤 표시 소자, 표시 장치 및 표시 장치의 제조 방법
US7667133B2 (en) * 2003-10-29 2010-02-23 The University Of Toledo Hybrid window layer for photovoltaic cells
WO2005101510A2 (en) * 2004-04-16 2005-10-27 The University Of Toledo Light-assisted electrochemical shunt passivation for photovoltaic devices
US20060089292A1 (en) * 2004-10-22 2006-04-27 Thomas Wirz Methods for VOC reduced pretreatment of substrates and detection by luminescence
WO2006062510A1 (en) * 2004-12-07 2006-06-15 Ahbee 2, Lp Non contact method and apparatus for measurement of sheet resistance of p-n junctions
WO2006110613A2 (en) * 2005-04-11 2006-10-19 The University Of Toledo Integrated photovoltaic-electrolysis cell
US7772485B2 (en) * 2005-07-14 2010-08-10 Konarka Technologies, Inc. Polymers with low band gaps and high charge mobility
US20070267055A1 (en) * 2005-07-14 2007-11-22 Konarka Technologies, Inc. Tandem Photovoltaic Cells
US20070131270A1 (en) * 2005-07-14 2007-06-14 Russell Gaudiana Window with photovoltaic cell
US20080006324A1 (en) * 2005-07-14 2008-01-10 Konarka Technologies, Inc. Tandem Photovoltaic Cells
US7781673B2 (en) * 2005-07-14 2010-08-24 Konarka Technologies, Inc. Polymers with low band gaps and high charge mobility
US8158881B2 (en) * 2005-07-14 2012-04-17 Konarka Technologies, Inc. Tandem photovoltaic cells
US20070181179A1 (en) 2005-12-21 2007-08-09 Konarka Technologies, Inc. Tandem photovoltaic cells
JP2007189199A (ja) 2005-12-12 2007-07-26 Tdk Corp キャパシタおよびその製造方法
US20080053518A1 (en) * 2006-09-05 2008-03-06 Pen-Hsiu Chang Transparent solar cell system
US8008424B2 (en) 2006-10-11 2011-08-30 Konarka Technologies, Inc. Photovoltaic cell with thiazole-containing polymer
US8008421B2 (en) * 2006-10-11 2011-08-30 Konarka Technologies, Inc. Photovoltaic cell with silole-containing polymer
KR100828254B1 (ko) * 2006-10-27 2008-05-07 미리넷솔라 주식회사 태양전지용 실리콘 기판의 제조 공정
JP4304638B2 (ja) 2007-07-13 2009-07-29 オムロン株式会社 Cis系太陽電池及びその製造方法
WO2009073501A2 (en) * 2007-11-30 2009-06-11 University Of Toledo System for diagnosis and treatment of photovoltaic and other semiconductor devices
JP5062684B2 (ja) * 2008-02-13 2012-10-31 シャープ株式会社 薄膜光電変換モジュールの製造方法および製造装置
WO2009137141A2 (en) * 2008-02-21 2009-11-12 Konarka Technologies, Inc. Tandem photovoltaic cells
US20110197947A1 (en) 2008-03-20 2011-08-18 Miasole Wire network for interconnecting photovoltaic cells
US8912429B2 (en) * 2008-03-20 2014-12-16 Hanergy Holding Group Ltd. Interconnect assembly
US20100043863A1 (en) 2008-03-20 2010-02-25 Miasole Interconnect assembly
WO2009120974A2 (en) * 2008-03-28 2009-10-01 University Of Toledo System for selectively filling pin holes, weak shunts and/or scribe lines in photovoltaic devices and photovoltaic cells made thereby
GB2459651A (en) * 2008-04-28 2009-11-04 Quantasol Ltd Concentrator photovoltaic cell
JP2010021437A (ja) * 2008-07-11 2010-01-28 Ulvac Japan Ltd 太陽電池の製造装置およびその製造方法
US8455606B2 (en) * 2008-08-07 2013-06-04 Merck Patent Gmbh Photoactive polymers
US8318239B2 (en) * 2008-11-17 2012-11-27 Solopower, Inc. Method and apparatus for detecting and passivating defects in thin film solar cells
US7979969B2 (en) * 2008-11-17 2011-07-19 Solopower, Inc. Method of detecting and passivating a defect in a solar cell
US8318240B2 (en) * 2008-11-17 2012-11-27 Solopower, Inc. Method and apparatus to remove a segment of a thin film solar cell structure for efficiency improvement
US20100264035A1 (en) * 2009-04-15 2010-10-21 Solopower, Inc. Reel-to-reel plating of conductive grids for flexible thin film solar cells
JP5528929B2 (ja) * 2009-08-31 2014-06-25 三井化学東セロ株式会社 測定方法、太陽電池モジュールの製造方法、太陽電池モジュールおよび太陽電池モジュールの評価方法
US8356640B1 (en) 2010-01-14 2013-01-22 Mia Solé Apparatuses and methods for fabricating wire current collectors and interconnects for solar cells
US9061344B1 (en) 2010-05-26 2015-06-23 Apollo Precision (Fujian) Limited Apparatuses and methods for fabricating wire current collectors and interconnects for solar cells
US10026859B2 (en) 2010-10-04 2018-07-17 Beijing Apollo Ding Rong Solar Technology Co., Ltd. Small gauge wire solar cell interconnect
US8951824B1 (en) 2011-04-08 2015-02-10 Apollo Precision (Fujian) Limited Adhesives for attaching wire network to photovoltaic cells
US9151597B2 (en) 2012-02-13 2015-10-06 First Solar, Inc. In situ substrate detection for a processing system using infrared detection
JP6049556B2 (ja) 2013-07-01 2016-12-21 株式会社東芝 太陽電池、太陽電池モジュール及び太陽電池の製造方法
US9564270B2 (en) * 2013-12-27 2017-02-07 Tdk Corporation Thin film capacitor
JP6446877B2 (ja) 2014-07-16 2019-01-09 Tdk株式会社 薄膜キャパシタ
JP6365216B2 (ja) 2014-10-15 2018-08-01 Tdk株式会社 薄膜キャパシタ
JP6641872B2 (ja) 2015-10-15 2020-02-05 Tdk株式会社 電子デバイスシート
WO2018155938A1 (en) * 2017-02-24 2018-08-30 Lg Electronics Inc. Compound semiconductor solar cell and method of manufacturing the same
WO2019061159A1 (zh) * 2017-09-28 2019-04-04 深圳市大疆创新科技有限公司 定位故障光伏板的方法、设备及无人机
US11430974B2 (en) * 2019-05-17 2022-08-30 Ppg Industries Ohio, Inc. System for roll-to-roll electrocoating of battery electrode coatings onto a foil substrate

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US4197141A (en) * 1978-01-31 1980-04-08 Massachusetts Institute Of Technology Method for passivating imperfections in semiconductor materials
US4451970A (en) * 1982-10-21 1984-06-05 Energy Conversion Devices, Inc. System and method for eliminating short circuit current paths in photovoltaic devices
US4464823A (en) * 1982-10-21 1984-08-14 Energy Conversion Devices, Inc. Method for eliminating short and latent short circuit current paths in photovoltaic devices
JPS6085577A (ja) * 1983-10-17 1985-05-15 Fuji Xerox Co Ltd 薄膜光電変換素子の製造方法
US4729970A (en) * 1986-09-15 1988-03-08 Energy Conversion Devices, Inc. Conversion process for passivating short circuit current paths in semiconductor devices
US4749454A (en) * 1986-11-17 1988-06-07 Solarex Corporation Method of removing electrical shorts and shunts from a thin-film semiconductor device
JPH04266068A (ja) * 1991-02-20 1992-09-22 Canon Inc 光電変換素子及びその製造方法

Also Published As

Publication number Publication date
US6132585A (en) 2000-10-17
AU4161093A (en) 1994-01-06
EP0577108B1 (de) 1997-06-04
KR970005153B1 (ko) 1997-04-12
DE69311209T2 (de) 1998-01-15
DE69311209D1 (de) 1997-07-10
JPH0621493A (ja) 1994-01-28
AU667718B2 (en) 1996-04-04
JP2686022B2 (ja) 1997-12-08
KR940006294A (ko) 1994-03-23
EP0577108A1 (de) 1994-01-05

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