DE69233222T2 - Verfahren zum Füllen eines Hohlraumes in einem Substrat - Google Patents

Verfahren zum Füllen eines Hohlraumes in einem Substrat Download PDF

Info

Publication number
DE69233222T2
DE69233222T2 DE69233222T DE69233222T DE69233222T2 DE 69233222 T2 DE69233222 T2 DE 69233222T2 DE 69233222 T DE69233222 T DE 69233222T DE 69233222 T DE69233222 T DE 69233222T DE 69233222 T2 DE69233222 T2 DE 69233222T2
Authority
DE
Germany
Prior art keywords
layer
deposition
disc
further layer
hole
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69233222T
Other languages
German (de)
English (en)
Other versions
DE69233222D1 (de
Inventor
Christopher David Olveston Bristol Dobson
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Trikon Technologies Ltd
Aviza Europe Ltd
Original Assignee
Trikon Technologies Ltd
Aviza Europe Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from GB919111440A external-priority patent/GB9111440D0/en
Priority claimed from GB929202745A external-priority patent/GB9202745D0/en
Application filed by Trikon Technologies Ltd, Aviza Europe Ltd filed Critical Trikon Technologies Ltd
Publication of DE69233222D1 publication Critical patent/DE69233222D1/de
Application granted granted Critical
Publication of DE69233222T2 publication Critical patent/DE69233222T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H10P72/0454—
    • H10D64/011—
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
    • H05K3/4038—Through-connections; Vertical interconnect access [VIA] connections
    • H05K3/4084—Through-connections; Vertical interconnect access [VIA] connections by deforming at least one of the conductive layers
    • H10P14/40—
    • H10P72/0468—
    • H10P95/00—
    • H10P95/04—
    • H10W20/059—
    • H10W20/092—
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/03—Conductive materials
    • H05K2201/0332—Structure of the conductor
    • H05K2201/0335—Layered conductors or foils
    • H05K2201/0355—Metal foils
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/02—Details related to mechanical or acoustic processing, e.g. drilling, punching, cutting, using ultrasound
    • H05K2203/0278—Flat pressure, e.g. for connecting terminals with anisotropic conductive adhesive
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/11—Treatments characterised by their effect, e.g. heating, cooling, roughening
    • H05K2203/1105—Heating or thermal processing not related to soldering, firing, curing or laminating, e.g. for shaping the substrate or during finish plating

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Physical Vapour Deposition (AREA)
  • Element Separation (AREA)
  • Chemical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE69233222T 1991-05-28 1992-05-21 Verfahren zum Füllen eines Hohlraumes in einem Substrat Expired - Lifetime DE69233222T2 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
GB919111440A GB9111440D0 (en) 1991-05-28 1991-05-28 Forming a layer
GB9111440 1991-05-28
GB929202745A GB9202745D0 (en) 1992-02-10 1992-02-10 Forming a layer
GB9202745 1992-02-10

Publications (2)

Publication Number Publication Date
DE69233222D1 DE69233222D1 (de) 2003-11-06
DE69233222T2 true DE69233222T2 (de) 2004-08-26

Family

ID=26298966

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69233222T Expired - Lifetime DE69233222T2 (de) 1991-05-28 1992-05-21 Verfahren zum Füllen eines Hohlraumes in einem Substrat

Country Status (6)

Country Link
EP (1) EP0516344B1 (enExample)
JP (1) JP3105643B2 (enExample)
KR (1) KR100242602B1 (enExample)
AT (1) ATE251342T1 (enExample)
DE (1) DE69233222T2 (enExample)
TW (1) TW221521B (enExample)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB9414145D0 (en) * 1994-07-13 1994-08-31 Electrotech Ltd Forming a layer
US5932289A (en) * 1991-05-28 1999-08-03 Trikon Technologies Limited Method for filling substrate recesses using pressure and heat treatment
GB9402486D0 (en) * 1994-02-09 1994-03-30 Electrotech Ltd Forming a layer
KR960026249A (ko) * 1994-12-12 1996-07-22 윌리엄 이. 힐러 고압, 저온 반도체 갭 충진 프로세스
EP0793268A3 (en) * 1995-05-23 1999-03-03 Texas Instruments Incorporated Process for filling a cavity in a semiconductor device
US5857368A (en) * 1995-10-06 1999-01-12 Applied Materials, Inc. Apparatus and method for fabricating metal paths in semiconductor substrates through high pressure extrusion
GB9619461D0 (en) 1996-09-18 1996-10-30 Electrotech Ltd Method of processing a workpiece
GB2319533B (en) 1996-11-22 2001-06-06 Trikon Equip Ltd Methods of forming a barrier layer
GB2319532B (en) * 1996-11-22 2001-01-31 Trikon Equip Ltd Method and apparatus for treating a semiconductor wafer
US6218277B1 (en) 1998-01-26 2001-04-17 Texas Instruments Incorporated Method for filling a via opening or contact opening in an integrated circuit
US7322981B2 (en) 2003-08-28 2008-01-29 Jackson Roger P Polyaxial bone screw with split retainer ring
JP4357486B2 (ja) 2003-06-18 2009-11-04 ロジャー・ピー・ジャクソン スプライン捕捉連結部を備えた多軸骨ねじ
US7160300B2 (en) 2004-02-27 2007-01-09 Jackson Roger P Orthopedic implant rod reduction tool set and method
US10049927B2 (en) 2016-06-10 2018-08-14 Applied Materials, Inc. Seam-healing method upon supra-atmospheric process in diffusion promoting ambient
US10224224B2 (en) 2017-03-10 2019-03-05 Micromaterials, LLC High pressure wafer processing systems and related methods
US10622214B2 (en) 2017-05-25 2020-04-14 Applied Materials, Inc. Tungsten defluorination by high pressure treatment
US10276411B2 (en) 2017-08-18 2019-04-30 Applied Materials, Inc. High pressure and high temperature anneal chamber
JP6947914B2 (ja) 2017-08-18 2021-10-13 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 高圧高温下のアニールチャンバ
CN117936417A (zh) 2017-11-11 2024-04-26 微材料有限责任公司 用于高压处理腔室的气体输送系统
KR20200075892A (ko) 2017-11-17 2020-06-26 어플라이드 머티어리얼스, 인코포레이티드 고압 처리 시스템을 위한 컨덴서 시스템
EP3762962A4 (en) 2018-03-09 2021-12-08 Applied Materials, Inc. HIGH PRESSURE ANNEALING PROCESS FOR METAL-BASED MATERIALS
US10950429B2 (en) 2018-05-08 2021-03-16 Applied Materials, Inc. Methods of forming amorphous carbon hard mask layers and hard mask layers formed therefrom
US10748783B2 (en) 2018-07-25 2020-08-18 Applied Materials, Inc. Gas delivery module
WO2020117462A1 (en) 2018-12-07 2020-06-11 Applied Materials, Inc. Semiconductor processing system
US11901222B2 (en) 2020-02-17 2024-02-13 Applied Materials, Inc. Multi-step process for flowable gap-fill film
CN113543527B (zh) * 2021-07-09 2022-12-30 广东工业大学 载板填孔工艺的填充基材选型方法及载板填孔工艺

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69023382T2 (de) * 1989-04-17 1996-06-20 Ibm Laminierungsverfahren zum Überdecken der Seitenwände einer Höhlung in einem Substrat sowie zur Füllung dieser Höhlung.
US5011793A (en) * 1990-06-19 1991-04-30 Nihon Shinku Gijutsu Kabushiki Kaisha Vacuum deposition using pressurized reflow process

Also Published As

Publication number Publication date
ATE251342T1 (de) 2003-10-15
DE69233222D1 (de) 2003-11-06
JP3105643B2 (ja) 2000-11-06
EP0516344B1 (en) 2003-10-01
KR920022405A (ko) 1992-12-19
KR100242602B1 (ko) 2000-02-01
TW221521B (enExample) 1994-03-01
JPH07193063A (ja) 1995-07-28
EP0516344A1 (en) 1992-12-02

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8328 Change in the person/name/address of the agent

Representative=s name: ZEITLER, VOLPERT, KANDLBINDER, 80539 MUENCHEN

R071 Expiry of right

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