DE3783404T2 - Leitende aktivierungsverbindungen fuer halbleiteranordnungen. - Google Patents
Leitende aktivierungsverbindungen fuer halbleiteranordnungen.Info
- Publication number
- DE3783404T2 DE3783404T2 DE8787111603T DE3783404T DE3783404T2 DE 3783404 T2 DE3783404 T2 DE 3783404T2 DE 8787111603 T DE8787111603 T DE 8787111603T DE 3783404 T DE3783404 T DE 3783404T DE 3783404 T2 DE3783404 T2 DE 3783404T2
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor arrangements
- guided activation
- activation connections
- connections
- guided
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000004913 activation Effects 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
- H01L23/5252—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising anti-fuses, i.e. connections having their state changed from non-conductive to conductive
- H01L23/5254—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising anti-fuses, i.e. connections having their state changed from non-conductive to conductive the change of state resulting from the use of an external beam, e.g. laser beam or ion beam
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/093—Laser beam treatment in general
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61189094A JPS6344739A (ja) | 1986-08-12 | 1986-08-12 | 半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3783404D1 DE3783404D1 (de) | 1993-02-18 |
DE3783404T2 true DE3783404T2 (de) | 1993-05-06 |
Family
ID=16235236
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8787111603T Expired - Fee Related DE3783404T2 (de) | 1986-08-12 | 1987-08-11 | Leitende aktivierungsverbindungen fuer halbleiteranordnungen. |
Country Status (5)
Country | Link |
---|---|
US (1) | US4968643A (de) |
EP (1) | EP0256494B1 (de) |
JP (1) | JPS6344739A (de) |
KR (1) | KR910004038B1 (de) |
DE (1) | DE3783404T2 (de) |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5070392A (en) * | 1988-03-18 | 1991-12-03 | Digital Equipment Corporation | Integrated circuit having laser-alterable metallization layer |
US5250465A (en) * | 1991-01-28 | 1993-10-05 | Fujitsu Limited | Method of manufacturing semiconductor devices |
US5451811A (en) * | 1991-10-08 | 1995-09-19 | Aptix Corporation | Electrically programmable interconnect element for integrated circuits |
US5321322A (en) * | 1991-11-27 | 1994-06-14 | Aptix Corporation | Programmable interconnect architecture without active devices |
WO1993012582A1 (en) * | 1991-12-13 | 1993-06-24 | Knights Technology, Inc. | Programmable logic device cell and method |
JPH0799791B2 (ja) * | 1992-04-15 | 1995-10-25 | インターナショナル・ビジネス・マシーンズ・コーポレイション | 透明基板上の回路ライン接続方法 |
JPH06124913A (ja) * | 1992-06-26 | 1994-05-06 | Semiconductor Energy Lab Co Ltd | レーザー処理方法 |
KR960009996B1 (ko) * | 1992-08-24 | 1996-07-25 | 금성일렉트론 주식회사 | 반도체 소자의 리페어장치 및 그 배치방법 |
US5453402A (en) * | 1992-12-15 | 1995-09-26 | Advanced Micro Devices, Inc. | Selective metal via plug growth technology for deep sub-micrometer ULSI |
JPH06260441A (ja) * | 1993-03-03 | 1994-09-16 | Nec Corp | 半導体装置の製造方法 |
US5920789A (en) * | 1994-10-11 | 1999-07-06 | Massachusetts Institute Of Technology | Technique for producing interconnecting conductive links |
JPH09510320A (ja) | 1994-03-10 | 1997-10-14 | マサチユセツツ・インスチチユート・オブ・テクノロジー | 接続用導電リンクの製造方法 |
US5585602A (en) * | 1995-01-09 | 1996-12-17 | Massachusetts Institute Of Technology | Structure for providing conductive paths |
US5861325A (en) * | 1994-03-10 | 1999-01-19 | Massachusetts Institute Of Technology | Technique for producing interconnecting conductive links |
US5940727A (en) * | 1994-10-11 | 1999-08-17 | Massachusetts Institute Of Technology | Technique for producing interconnecting conductive links |
TW278229B (en) * | 1994-12-29 | 1996-06-11 | Siemens Ag | Fuse structure for an integrated circuit device and method for manufacturing a fuse structure |
JP3160198B2 (ja) * | 1995-02-08 | 2001-04-23 | インターナショナル・ビジネス・マシーンズ・コーポレ−ション | デカップリング・コンデンサが形成された半導体基板及びこれの製造方法 |
US5731047A (en) * | 1996-11-08 | 1998-03-24 | W.L. Gore & Associates, Inc. | Multiple frequency processing to improve electrical resistivity of blind micro-vias |
JPH10229125A (ja) * | 1997-02-14 | 1998-08-25 | Nec Corp | 半導体装置 |
US6288437B1 (en) * | 1999-02-26 | 2001-09-11 | Micron Technology, Inc. | Antifuse structures methods and applications |
US6472253B1 (en) | 1999-11-15 | 2002-10-29 | Vlsi Technology, Inc. | Programmable semiconductor device structures and methods for making the same |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5780738A (en) * | 1980-11-07 | 1982-05-20 | Seiko Epson Corp | Semiconductor integrated device |
US4585490A (en) * | 1981-12-07 | 1986-04-29 | Massachusetts Institute Of Technology | Method of making a conductive path in multi-layer metal structures by low power laser beam |
JPS5996746A (ja) * | 1982-11-26 | 1984-06-04 | Hitachi Ltd | 半導体装置およびその製造方法 |
ATE56310T1 (de) * | 1984-06-27 | 1990-09-15 | Contraves Ag | Verfahren zur herstellung eines basismaterials fuer eine hybridschaltung. |
US4681795A (en) * | 1985-06-24 | 1987-07-21 | The United States Of America As Represented By The Department Of Energy | Planarization of metal films for multilevel interconnects |
US4814578A (en) * | 1985-06-24 | 1989-03-21 | The United States Of America As Represented By The Department Of Energy | Planarization of metal films for multilevel interconnects |
US4674176A (en) * | 1985-06-24 | 1987-06-23 | The United States Of America As Represented By The United States Department Of Energy | Planarization of metal films for multilevel interconnects by pulsed laser heating |
JPS62293740A (ja) * | 1986-06-13 | 1987-12-21 | Fujitsu Ltd | 半導体装置の製造方法 |
-
1986
- 1986-08-12 JP JP61189094A patent/JPS6344739A/ja active Granted
-
1987
- 1987-08-11 EP EP87111603A patent/EP0256494B1/de not_active Expired - Lifetime
- 1987-08-11 KR KR1019870008776A patent/KR910004038B1/ko not_active IP Right Cessation
- 1987-08-11 DE DE8787111603T patent/DE3783404T2/de not_active Expired - Fee Related
-
1989
- 1989-04-26 US US07/344,525 patent/US4968643A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP0256494A2 (de) | 1988-02-24 |
EP0256494A3 (en) | 1988-07-27 |
EP0256494B1 (de) | 1993-01-07 |
US4968643A (en) | 1990-11-06 |
JPS6344739A (ja) | 1988-02-25 |
JPH058864B2 (de) | 1993-02-03 |
KR910004038B1 (ko) | 1991-06-22 |
DE3783404D1 (de) | 1993-02-18 |
KR880003407A (ko) | 1988-05-17 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE3783404D1 (de) | Leitende aktivierungsverbindungen fuer halbleiteranordnungen. | |
DE3778499D1 (de) | Verpackung fuer halbleiterelemente. | |
DE3787769D1 (de) | Halbleiterlaservorrichtung. | |
DE3786844D1 (de) | Packung fuer integrierte schaltung. | |
DE3679108D1 (de) | Halbleiteranordnungen. | |
DE3786339T2 (de) | Halbleiterlaservorrichtung. | |
DE3750995T2 (de) | Halbleiterlaservorrichtung. | |
DE3584799D1 (de) | Halbleitervorrichtung. | |
DE3786070D1 (de) | Umhuellte halbleiteranordnung. | |
DE3773456D1 (de) | Verbindungsgeraet fuer integrierte schaltung. | |
DE3773957D1 (de) | Halbleitervorrichtung. | |
DE3782775D1 (de) | Integrierte halbleiterschaltung. | |
DE3680774D1 (de) | Integriertes halbleiterbauelement. | |
DE3770841D1 (de) | Pufferschaltung fuer integrierte schaltung. | |
DE3581370D1 (de) | Halbleitervorrichtung. | |
DE3789832D1 (de) | Halbleiterlaser-Vorrichtung. | |
DE3776186D1 (de) | Halbleiterlaser-vorrichtung. | |
DE3586568T2 (de) | Halbleitereinrichtung. | |
DE3783507D1 (de) | Zusammengesetztes halbleiterbauelement. | |
NL193883B (nl) | Geïntegreerde halfgeleiderinrichting. | |
DE3784247D1 (de) | Halbleiter-zusammenbau. | |
DE3787137D1 (de) | Halbleiteranordnung. | |
DE3685983D1 (de) | Integrierte halbleiteranordnung. | |
DE3787848D1 (de) | Halbleiterdiode. | |
DE3785859T2 (de) | Halbleiterstrukturen. |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |