DE69218478D1 - Flüchtiger, flüssiger Vorläufers zum chemischen Dampfphasenabscheiden von Kupfer - Google Patents

Flüchtiger, flüssiger Vorläufers zum chemischen Dampfphasenabscheiden von Kupfer

Info

Publication number
DE69218478D1
DE69218478D1 DE69218478T DE69218478T DE69218478D1 DE 69218478 D1 DE69218478 D1 DE 69218478D1 DE 69218478 T DE69218478 T DE 69218478T DE 69218478 T DE69218478 T DE 69218478T DE 69218478 D1 DE69218478 D1 DE 69218478D1
Authority
DE
Germany
Prior art keywords
volatile
copper
vapor deposition
chemical vapor
liquid precursor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69218478T
Other languages
English (en)
Other versions
DE69218478T2 (de
Inventor
John Anthony Thomas Norman
Beth Anne Muratore
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Air Products and Chemicals Inc
Original Assignee
Air Products and Chemicals Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Air Products and Chemicals Inc filed Critical Air Products and Chemicals Inc
Publication of DE69218478D1 publication Critical patent/DE69218478D1/de
Application granted granted Critical
Publication of DE69218478T2 publication Critical patent/DE69218478T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C07F7/02—Silicon compounds
    • C07F7/08—Compounds having one or more C—Si linkages
    • C07F7/0803—Compounds with Si-C or Si-Si linkages

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
DE69218478T 1991-02-04 1992-01-28 Flüchtiger, flüssiger Vorläufers zum chemischen Dampfphasenabscheiden von Kupfer Expired - Lifetime DE69218478T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/650,332 US5085731A (en) 1991-02-04 1991-02-04 Volatile liquid precursors for the chemical vapor deposition of copper

Publications (2)

Publication Number Publication Date
DE69218478D1 true DE69218478D1 (de) 1997-04-30
DE69218478T2 DE69218478T2 (de) 1997-07-03

Family

ID=24608457

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69218478T Expired - Lifetime DE69218478T2 (de) 1991-02-04 1992-01-28 Flüchtiger, flüssiger Vorläufers zum chemischen Dampfphasenabscheiden von Kupfer

Country Status (5)

Country Link
US (1) US5085731A (de)
EP (1) EP0498269B1 (de)
JP (1) JPH0649943B2 (de)
KR (1) KR940011709B1 (de)
DE (1) DE69218478T2 (de)

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JP2622671B2 (ja) * 1995-03-07 1997-06-18 株式会社トリケミカル研究所 銅のβ−ジケトネート錯体の製造方法
KR100225686B1 (ko) 1995-03-20 1999-10-15 모리시다 요이치치 막형성용 재료 및 배선형성방법
US5990008A (en) * 1996-09-25 1999-11-23 Kabushiki Kaisha Toshiba Semiconductor device with pure copper wirings and method of manufacturing a semiconductor device with pure copper wirings
US5851367A (en) * 1996-10-11 1998-12-22 Sharp Microelectronics Technology, Inc. Differential copper deposition on integrated circuit surfaces and method for same
US6090960A (en) * 1997-01-07 2000-07-18 Sharp Laboratories Of America, Inc. Precursor with (methoxy) (methyl) silylolefin ligand to deposit copper and method same
US5767301A (en) * 1997-01-21 1998-06-16 Sharp Microelectronics Technology, Inc. Precursor with (alkyloxy)(alkyl)-silylolefin ligand to deposit copper
FR2760743B1 (fr) 1997-03-13 1999-07-23 Centre Nat Rech Scient Nouveaux precurseurs de cuivre(i) pour depot chimique en phase gazeuse de cuivre metallique
KR100259357B1 (ko) * 1998-02-07 2000-06-15 김영환 반도체 소자의 배선형성방법
JP3334605B2 (ja) * 1998-05-07 2002-10-15 三菱電機株式会社 電極形成用ｃｖｄ原料、およびそれを用いて形成されたキャパシタ用電極、配線膜
US6461675B2 (en) * 1998-07-10 2002-10-08 Cvc Products, Inc. Method for forming a copper film on a substrate
AU5333199A (en) * 1998-08-03 2000-02-28 Advanced Technology Materials, Inc. Copper precursor composition and process for manufacture of microelectronic device structures
US6284052B2 (en) * 1998-08-19 2001-09-04 Sharp Laboratories Of America, Inc. In-situ method of cleaning a metal-organic chemical vapor deposition chamber
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US6037001A (en) * 1998-09-18 2000-03-14 Gelest, Inc. Method for the chemical vapor deposition of copper-based films
US6066196A (en) * 1998-09-18 2000-05-23 Gelest, Inc. Method for the chemical vapor deposition of copper-based films and copper source precursors for the same
KR100536484B1 (ko) * 1998-10-16 2006-02-28 학교법인 포항공과대학교 구리의 화학 증착에 유용한 액상 전구체
US6090963A (en) * 1998-11-10 2000-07-18 Sharp Laboratories Of America, Inc. Alkene ligand precursor and synthesis method
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US6015918A (en) * 1998-11-10 2000-01-18 Sharp Laboratories Of America, Inc. Allyl-derived precursor and synthesis method
JP3865187B2 (ja) * 1998-11-10 2007-01-10 シャープ株式会社 置換フェニルエチレン前駆体およびその合成方法
US6204176B1 (en) * 1998-11-10 2001-03-20 Sharp Laboratories Of America, Inc. Substituted phenylethylene precursor deposition method
US5994571A (en) * 1998-11-10 1999-11-30 Sharp Laboratories Of America, Inc. Substituted ethylene precursor and synthesis method
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US6337148B1 (en) 1999-05-25 2002-01-08 Advanced Technology Materials, Inc. Copper source reagent compositions, and method of making and using same for microelectronic device structures
US6096913A (en) * 1999-06-10 2000-08-01 Air Products And Chemicals, Inc. Production of metal-ligand complexes
US6110530A (en) * 1999-06-25 2000-08-29 Applied Materials, Inc. CVD method of depositing copper films by using improved organocopper precursor blend
US6291347B1 (en) 1999-10-08 2001-09-18 Texas Instruments Incorporated Method and system for constructing semiconductor devices
EP1247292B1 (de) 1999-12-15 2009-02-04 Genitech Co., Ltd. Methode zur herstellung von kupfer-zwischenverbindungen und dünnen filmen mittels cvd und einem katalysator
KR100358045B1 (ko) * 1999-12-22 2002-10-25 주식회사 하이닉스반도체 반도체 소자의 구리 금속 배선 형성 방법
US6281377B1 (en) 2000-02-11 2001-08-28 Sharp Laboratories Of America, Inc. Substituted cycloalkene new copper precursors for chemical vapor deposition of copper metal thin films
US6627995B2 (en) 2000-03-03 2003-09-30 Cvc Products, Inc. Microelectronic interconnect material with adhesion promotion layer and fabrication method
US6589329B1 (en) 2000-03-09 2003-07-08 Advanced Technology Materials, Inc. Composition and process for production of copper circuitry in microelectronic device structures
US6417369B1 (en) 2000-03-13 2002-07-09 Advanced Technology Materials, Inc. Pyrazolate copper complexes, and MOCVD of copper using same
WO2001068580A1 (fr) * 2000-03-14 2001-09-20 Nissan Chemical Industries, Ltd. COMPLEXE β-DICETONATOCUIVRE(I) CONTENANT UN COMPOSE ALLENE EN LIGAND ET PROCEDE DE PRODUCTION
US6440494B1 (en) * 2000-04-05 2002-08-27 Tokyo Electron Limited In-situ source synthesis for metal CVD
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JP4622098B2 (ja) * 2000-12-25 2011-02-02 東ソー株式会社 安定化された珪素含有アルケン銅錯体及びその製造方法
US7192827B2 (en) * 2001-01-05 2007-03-20 Micron Technology, Inc. Methods of forming capacitor structures
US6596344B2 (en) * 2001-03-27 2003-07-22 Sharp Laboratories Of America, Inc. Method of depositing a high-adhesive copper thin film on a metal nitride substrate
US6579793B2 (en) 2001-03-27 2003-06-17 Sharp Laboratories Of America, Inc. Method of achieving high adhesion of CVD copper thin films on TaN Substrates
US7084080B2 (en) * 2001-03-30 2006-08-01 Advanced Technology Materials, Inc. Silicon source reagent compositions, and method of making and using same for microelectronic device structure
US6509266B1 (en) 2001-04-02 2003-01-21 Air Products And Chemicals, Inc. Halogen addition for improved adhesion of CVD copper to barrier
US7049226B2 (en) * 2001-09-26 2006-05-23 Applied Materials, Inc. Integration of ALD tantalum nitride for copper metallization
US6534666B1 (en) 2001-12-27 2003-03-18 Air Products And Chemicals, Inc. Use of water and acidic water to purify liquid MOCVD precursors
US6911391B2 (en) * 2002-01-26 2005-06-28 Applied Materials, Inc. Integration of titanium and titanium nitride layers
US6619538B1 (en) * 2002-05-02 2003-09-16 Texas Instruments Incorporated Nickel plating process having controlled hydrogen concentration
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KR20190042461A (ko) 2017-10-14 2019-04-24 어플라이드 머티어리얼스, 인코포레이티드 Beol 인터커넥트를 위한 고온 pvd 구리 증착을 이용한 ald 구리의 집적

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US4948623A (en) * 1987-06-30 1990-08-14 International Business Machines Corporation Method of chemical vapor deposition of copper, silver, and gold using a cyclopentadienyl/metal complex

Also Published As

Publication number Publication date
JPH0559551A (ja) 1993-03-09
US5085731A (en) 1992-02-04
JPH0649943B2 (ja) 1994-06-29
EP0498269A2 (de) 1992-08-12
KR920016609A (ko) 1992-09-25
EP0498269A3 (en) 1993-10-20
DE69218478T2 (de) 1997-07-03
KR940011709B1 (ko) 1994-12-23
EP0498269B1 (de) 1997-03-26

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