FR2492847B1 - Procede de depot chimique en phase vapeur - Google Patents

Procede de depot chimique en phase vapeur

Info

Publication number
FR2492847B1
FR2492847B1 FR8119830A FR8119830A FR2492847B1 FR 2492847 B1 FR2492847 B1 FR 2492847B1 FR 8119830 A FR8119830 A FR 8119830A FR 8119830 A FR8119830 A FR 8119830A FR 2492847 B1 FR2492847 B1 FR 2492847B1
Authority
FR
France
Prior art keywords
vapor deposition
chemical vapor
deposition process
chemical
vapor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR8119830A
Other languages
English (en)
Other versions
FR2492847A1 (fr
Inventor
Shoichi Komatsu
Seiichi Iwamatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Suwa Seikosha KK
Original Assignee
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Suwa Seikosha KK filed Critical Suwa Seikosha KK
Publication of FR2492847A1 publication Critical patent/FR2492847A1/fr
Application granted granted Critical
Publication of FR2492847B1 publication Critical patent/FR2492847B1/fr
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • C23C16/402—Silicon dioxide
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/005—Oxydation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
FR8119830A 1980-10-24 1981-10-22 Procede de depot chimique en phase vapeur Expired FR2492847B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55149206A JPS5772318A (en) 1980-10-24 1980-10-24 Vapor growth method

Publications (2)

Publication Number Publication Date
FR2492847A1 FR2492847A1 (fr) 1982-04-30
FR2492847B1 true FR2492847B1 (fr) 1987-03-20

Family

ID=15470140

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8119830A Expired FR2492847B1 (fr) 1980-10-24 1981-10-22 Procede de depot chimique en phase vapeur

Country Status (5)

Country Link
US (1) US4404236A (fr)
JP (1) JPS5772318A (fr)
DE (1) DE3141310C2 (fr)
FR (1) FR2492847B1 (fr)
GB (1) GB2086871B (fr)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5958819A (ja) * 1982-09-29 1984-04-04 Hitachi Ltd 薄膜形成方法
JPS61117841A (ja) * 1984-11-14 1986-06-05 Hitachi Ltd シリコン窒化膜の形成方法
JPS61236604A (ja) * 1985-04-11 1986-10-21 Toshiba Ceramics Co Ltd β−Ｓｉ↓３Ｎ↓４の合成方法
JPH0251230A (ja) * 1988-08-12 1990-02-21 Fuji Electric Co Ltd Ｃｖｄ酸化膜形成方法
US5221352A (en) * 1989-06-19 1993-06-22 Glaverbel Apparatus for pyrolytically forming an oxide coating on a hot glass substrate
GB8914047D0 (en) * 1989-06-19 1989-08-09 Glaverbel Method of and apparatus for pyrolytically forming an oxide coating on a hot glass substrate
US5601652A (en) * 1989-08-03 1997-02-11 United Technologies Corporation Apparatus for applying ceramic coatings
US5087477A (en) * 1990-02-05 1992-02-11 United Technologies Corporation Eb-pvd method for applying ceramic coatings
US5695819A (en) * 1991-08-09 1997-12-09 Applied Materials, Inc. Method of enhancing step coverage of polysilicon deposits
US5614257A (en) * 1991-08-09 1997-03-25 Applied Materials, Inc Low temperature, high pressure silicon deposition method
JP3121131B2 (ja) * 1991-08-09 2000-12-25 アプライド マテリアルズ インコーポレイテッド 低温高圧のシリコン蒸着方法
EP0572704B1 (fr) * 1992-06-05 2000-04-19 Semiconductor Process Laboratory Co., Ltd. Procédé de fabrication d'un dispositif semi-conducteur comportant une méthode de réforme d'une couche isolante obtenue par CVD à basse température
US5434110A (en) * 1992-06-15 1995-07-18 Materials Research Corporation Methods of chemical vapor deposition (CVD) of tungsten films on patterned wafer substrates
US5370739A (en) * 1992-06-15 1994-12-06 Materials Research Corporation Rotating susceptor semiconductor wafer processing cluster tool module useful for tungsten CVD
AU1592899A (en) 1997-12-02 1999-06-16 Gelest, Inc. Silicon based films formed from iodosilane precursors and method of making th e same
WO1999045167A1 (fr) * 1998-03-06 1999-09-10 Asm America, Inc. Procede de depot de silicium, a pouvoir couvrant eleve sur les gradins
CN1300328A (zh) 1998-04-14 2001-06-20 Cvd系统公司 薄膜淀积系统
US6296711B1 (en) 1998-04-14 2001-10-02 Cvd Systems, Inc. Film processing system
US6136725A (en) * 1998-04-14 2000-10-24 Cvd Systems, Inc. Method for chemical vapor deposition of a material on a substrate
KR100315441B1 (ko) * 1999-03-25 2001-11-28 황인길 반도체 소자 분리를 위한 얕은 트렌치 제조 방법
US20010051215A1 (en) * 2000-04-13 2001-12-13 Gelest, Inc. Methods for chemical vapor deposition of titanium-silicon-nitrogen films
US9443730B2 (en) 2014-07-18 2016-09-13 Asm Ip Holding B.V. Process for forming silicon-filled openings with a reduced occurrence of voids
US9837271B2 (en) 2014-07-18 2017-12-05 Asm Ip Holding B.V. Process for forming silicon-filled openings with a reduced occurrence of voids
US10460932B2 (en) 2017-03-31 2019-10-29 Asm Ip Holding B.V. Semiconductor device with amorphous silicon filled gaps and methods for forming

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3573096A (en) * 1965-06-23 1971-03-30 Sperry Rand Corp Silane method for making silicon nitride
FR1541803A (fr) * 1966-09-06 1968-10-11 Western Electric Co Croissance de pellicules minces de nitrure de silicium
US3843398A (en) * 1970-06-25 1974-10-22 R Maagdenberg Catalytic process for depositing nitride films
US3677799A (en) * 1970-11-10 1972-07-18 Celanese Corp Vapor phase boron deposition by pulse discharge
US3808035A (en) * 1970-12-09 1974-04-30 M Stelter Deposition of single or multiple layers on substrates from dilute gas sweep to produce optical components, electro-optical components, and the like
DE2113853C3 (de) * 1971-03-23 1973-12-13 Deutsche Edelstahlwerke Gmbh, 4150 Krefeld Verfahren zur Herstellung von fest haftenden verschleißfesten Überzügen aus Metallnitrid oder karbonitnd auf Hartmetallteilen
DE2263210B2 (de) * 1972-02-04 1977-03-17 Metallwerk Plansee AG & Co. KG, Reutte, Tirol (Österreich) Verschleissteil aus hartmetall, insbesondere fuer werkzeuge
US4018184A (en) * 1975-07-28 1977-04-19 Mitsubishi Denki Kabushiki Kaisha Apparatus for treatment of semiconductor wafer
US4167915A (en) * 1977-03-09 1979-09-18 Atomel Corporation High-pressure, high-temperature gaseous chemical apparatus
DE2739258C2 (de) * 1977-08-31 1985-06-20 Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen Verfahren zur Aufbringung einer Siliciumcarbid und Siliciumnitrid enthaltenden Schutzschicht auf Kohlenstofformkörper
GB1530337A (en) * 1977-09-15 1978-10-25 Central Electr Generat Board Application of protective coatings to metal or metal with an oxide coating or to graphite
JPS5522862A (en) * 1978-08-07 1980-02-18 Nec Corp Manufacturing method for silicon oxidized film
JPS5559729A (en) * 1978-10-27 1980-05-06 Fujitsu Ltd Forming method of semiconductor surface insulating film
DD139602A1 (de) * 1978-11-09 1980-01-09 Hermann Plaenitz Verfahren zur erzeugung von boridschichten aus der gasphase

Also Published As

Publication number Publication date
FR2492847A1 (fr) 1982-04-30
GB2086871B (en) 1984-04-18
GB2086871A (en) 1982-05-19
US4404236A (en) 1983-09-13
JPS5772318A (en) 1982-05-06
DE3141310A1 (de) 1982-06-16
DE3141310C2 (de) 1986-12-04

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Legal Events

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ST Notification of lapse