FR2322634A1 - Reacteur de depot de vapeur chimique a fonctionnement continu - Google Patents

Reacteur de depot de vapeur chimique a fonctionnement continu

Info

Publication number
FR2322634A1
FR2322634A1 FR7626011A FR7626011A FR2322634A1 FR 2322634 A1 FR2322634 A1 FR 2322634A1 FR 7626011 A FR7626011 A FR 7626011A FR 7626011 A FR7626011 A FR 7626011A FR 2322634 A1 FR2322634 A1 FR 2322634A1
Authority
FR
France
Prior art keywords
chemical vapor
continuous operation
vapor deposit
operation chemical
deposit reactor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7626011A
Other languages
English (en)
Other versions
FR2322634B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Publication of FR2322634A1 publication Critical patent/FR2322634A1/fr
Application granted granted Critical
Publication of FR2322634B1 publication Critical patent/FR2322634B1/fr
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4409—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber characterised by sealing means
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Vapour Deposition (AREA)
FR7626011A 1975-09-02 1976-08-27 Reacteur de depot de vapeur chimique a fonctionnement continu Granted FR2322634A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/609,879 US4048955A (en) 1975-09-02 1975-09-02 Continuous chemical vapor deposition reactor

Publications (2)

Publication Number Publication Date
FR2322634A1 true FR2322634A1 (fr) 1977-04-01
FR2322634B1 FR2322634B1 (fr) 1983-01-21

Family

ID=24442723

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7626011A Granted FR2322634A1 (fr) 1975-09-02 1976-08-27 Reacteur de depot de vapeur chimique a fonctionnement continu

Country Status (10)

Country Link
US (1) US4048955A (fr)
JP (2) JPS5230794A (fr)
CA (1) CA1068582A (fr)
CH (1) CH626121A5 (fr)
DE (1) DE2639553A1 (fr)
FR (1) FR2322634A1 (fr)
GB (1) GB1561753A (fr)
NL (1) NL7609443A (fr)
SE (1) SE7609616L (fr)
SU (1) SU720996A3 (fr)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0106521A3 (en) * 1982-09-16 1984-07-11 Energy Conversion Devices, Inc. Baffle system for glow discharge deposition apparatus
WO1984003720A1 (fr) * 1983-03-21 1984-09-27 Commissariat Energie Atomique Procede et dispositif d'elaboration de couches composites
EP0378815A2 (fr) * 1988-12-20 1990-07-25 Texas Instruments Incorporated Système de dépôt chimique en phase vapeur en continu
US5074736A (en) * 1988-12-20 1991-12-24 Texas Instruments Incorporated Semiconductor wafer carrier design

Families Citing this family (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4048955A (en) * 1975-09-02 1977-09-20 Texas Instruments Incorporated Continuous chemical vapor deposition reactor
FI57975C (fi) * 1979-02-28 1980-11-10 Lohja Ab Oy Foerfarande och anordning vid uppbyggande av tunna foereningshinnor
US4389973A (en) * 1980-03-18 1983-06-28 Oy Lohja Ab Apparatus for performing growth of compound thin films
US4542711A (en) * 1981-03-16 1985-09-24 Sovonics Solar Systems Continuous system for depositing amorphous semiconductor material
US4462332A (en) * 1982-04-29 1984-07-31 Energy Conversion Devices, Inc. Magnetic gas gate
US4450786A (en) * 1982-08-13 1984-05-29 Energy Conversion Devices, Inc. Grooved gas gate
US4537795A (en) * 1982-09-16 1985-08-27 Sovonics Solar Systems Method for introducing sweep gases into a glow discharge deposition apparatus
US4480585A (en) * 1983-06-23 1984-11-06 Energy Conversion Devices, Inc. External isolation module
JPS6024370A (ja) * 1983-07-19 1985-02-07 Mitaka Denshi Kagaku Kenkyusho:Kk 試料の連続加工装置
EP0173715B1 (fr) * 1984-02-13 1992-04-22 SCHMITT, Jerome J. III Procede et appareil pour le depot par jet de gaz de minces films solides conducteurs et dielectriques et produits fabriques de la sorte
US4798166A (en) * 1985-12-20 1989-01-17 Canon Kabushiki Kaisha Apparatus for continuously preparing a light receiving element for use in photoelectromotive force member or image-reading photosensor
US4852516A (en) * 1986-05-19 1989-08-01 Machine Technology, Inc. Modular processing apparatus for processing semiconductor wafers
US5016562A (en) * 1988-04-27 1991-05-21 Glasstech Solar, Inc. Modular continuous vapor deposition system
US5052886A (en) * 1988-12-20 1991-10-01 Texas Instruments Incorporated Semiconductor wafer orientation device
US5042423A (en) * 1988-12-20 1991-08-27 Texas Instruments Incorporated Semiconductor wafer carrier design
US4949669A (en) * 1988-12-20 1990-08-21 Texas Instruments Incorporated Gas flow systems in CCVD reactors
US5105762A (en) * 1988-12-20 1992-04-21 Texas Instruments Incorporated Support and seal structure for CCVD reactor
US4908495A (en) * 1988-12-20 1990-03-13 Texas Instruments Incorporated Heating lamp assembly for ccvd reactors
US4941429A (en) * 1988-12-20 1990-07-17 Texas Instruments Incorporated Semiconductor wafer carrier guide tracks
JPH0659247B2 (ja) * 1989-08-23 1994-08-10 吉田工業株式会社 スライドファスナーの製造方法
JP3115134B2 (ja) * 1992-11-27 2000-12-04 松下電器産業株式会社 薄膜処理装置および薄膜処理方法
US5651868A (en) * 1994-10-26 1997-07-29 International Business Machines Corporation Method and apparatus for coating thin film data storage disks
US5563095A (en) * 1994-12-01 1996-10-08 Frey; Jeffrey Method for manufacturing semiconductor devices
US5997588A (en) * 1995-10-13 1999-12-07 Advanced Semiconductor Materials America, Inc. Semiconductor processing system with gas curtain
US5960158A (en) * 1997-07-11 1999-09-28 Ag Associates Apparatus and method for filtering light in a thermal processing chamber
US5997963A (en) * 1998-05-05 1999-12-07 Ultratech Stepper, Inc. Microchamber
US5970214A (en) * 1998-05-14 1999-10-19 Ag Associates Heating device for semiconductor wafers
US5930456A (en) * 1998-05-14 1999-07-27 Ag Associates Heating device for semiconductor wafers
US6210484B1 (en) 1998-09-09 2001-04-03 Steag Rtp Systems, Inc. Heating device containing a multi-lamp cone for heating semiconductor wafers
US6771895B2 (en) 1999-01-06 2004-08-03 Mattson Technology, Inc. Heating device for heating semiconductor wafers in thermal processing chambers
US6281141B1 (en) 1999-02-08 2001-08-28 Steag Rtp Systems, Inc. Process for forming thin dielectric layers in semiconductor devices
US6399510B1 (en) 2000-09-12 2002-06-04 Applied Materials, Inc. Bi-directional processing chamber and method for bi-directional processing of semiconductor substrates
US7368368B2 (en) 2004-08-18 2008-05-06 Cree, Inc. Multi-chamber MOCVD growth apparatus for high performance/high throughput
KR100664545B1 (ko) * 2005-03-08 2007-01-03 (주)씨엔티 탄소나노튜브 대량합성장치 및 대량합성방법
DE102005045582B3 (de) 2005-09-23 2007-03-29 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Vorrichtung und Verfahren zur kontinuierlichen Gasphasenabscheidung unter Atmosphärendruck und deren Verwendung
RU2388690C2 (ru) * 2008-05-22 2010-05-10 Общество с ограниченной ответственностью "Группа СТР" Способ получения поликристаллического кремния
US8034691B2 (en) * 2008-08-18 2011-10-11 Macronix International Co., Ltd. HDP-CVD process, filling-in process utilizing HDP-CVD, and HDP-CVD system
US8865259B2 (en) * 2010-04-26 2014-10-21 Singulus Mocvd Gmbh I.Gr. Method and system for inline chemical vapor deposition
DE102016101003A1 (de) 2016-01-21 2017-07-27 Aixtron Se CVD-Vorrichtung mit einem als Baugruppe aus dem Reaktorgehäuse entnehmbaren Prozesskammergehäuse

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1511289A (fr) * 1966-02-23 1968-01-26 Corning Glass Works Procédé et appareil pour le dopage continu de matériaux semi-conducteurs
FR2043511A1 (fr) * 1969-05-19 1971-02-19 Ibm
DE2214291A1 (de) * 1972-03-24 1973-10-04 Hartung Karl C Durchlaufofen

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL262369A (fr) * 1959-05-28 1900-01-01
US3314393A (en) * 1962-07-05 1967-04-18 Nippon Electric Co Vapor deposition device
US3240915A (en) * 1962-09-19 1966-03-15 Fostoria Corp Infra-red heater
US3294670A (en) * 1963-10-07 1966-12-27 Western Electric Co Apparatus for processing materials in a controlled atmosphere
US3486237A (en) * 1967-09-29 1969-12-30 Bausch & Lomb Positioning tool for vacuum chamber workholder
US3523517A (en) * 1968-09-04 1970-08-11 Sloan Instr Corp Rotating workpiece holder
US3650042A (en) * 1969-05-19 1972-03-21 Ibm Gas barrier for interconnecting and isolating two atmospheres
BE760041A (fr) * 1970-01-02 1971-05-17 Ibm Procede et appareil de transfert de masse gazeuse
US3645545A (en) * 1970-07-30 1972-02-29 Ibm Entrance-exit atmospheric isolation device
US3658032A (en) * 1970-11-05 1972-04-25 Fairchild Camera Instr Co Reactor for the formation of material on a substrate
US3742904A (en) * 1971-06-03 1973-07-03 Motorola Inc Steam generator and gas insertion device
JPS4834798A (fr) * 1971-09-06 1973-05-22
JPS5183777A (ja) * 1975-01-21 1976-07-22 Tokyo Shibaura Electric Co Kisoseichosochi
US4048955A (en) * 1975-09-02 1977-09-20 Texas Instruments Incorporated Continuous chemical vapor deposition reactor

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1511289A (fr) * 1966-02-23 1968-01-26 Corning Glass Works Procédé et appareil pour le dopage continu de matériaux semi-conducteurs
FR2043511A1 (fr) * 1969-05-19 1971-02-19 Ibm
DE2214291A1 (de) * 1972-03-24 1973-10-04 Hartung Karl C Durchlaufofen

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0106521A3 (en) * 1982-09-16 1984-07-11 Energy Conversion Devices, Inc. Baffle system for glow discharge deposition apparatus
WO1984003720A1 (fr) * 1983-03-21 1984-09-27 Commissariat Energie Atomique Procede et dispositif d'elaboration de couches composites
FR2543165A1 (fr) * 1983-03-21 1984-09-28 Commissariat Energie Atomique Procede et dispositif d'elaboration de couches composites, par superposition, en continu et en atmosphere controlee
EP0378815A2 (fr) * 1988-12-20 1990-07-25 Texas Instruments Incorporated Système de dépôt chimique en phase vapeur en continu
EP0378815A3 (fr) * 1988-12-20 1991-07-31 Texas Instruments Incorporated Système de dépôt chimique en phase vapeur en continu
US5074736A (en) * 1988-12-20 1991-12-24 Texas Instruments Incorporated Semiconductor wafer carrier design

Also Published As

Publication number Publication date
DE2639553A1 (de) 1977-03-10
SU720996A3 (ru) 1980-03-08
JPS61143578A (ja) 1986-07-01
CH626121A5 (fr) 1981-10-30
JPS6112993B2 (fr) 1986-04-11
FR2322634B1 (fr) 1983-01-21
US4048955A (en) 1977-09-20
GB1561753A (en) 1980-02-27
CA1068582A (fr) 1979-12-25
JPS5230794A (en) 1977-03-08
NL7609443A (nl) 1977-03-04
SE7609616L (sv) 1977-03-03
JPS641549B2 (fr) 1989-01-11

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