DE69010835T2 - Chemischer Dampfablagerungsapparat. - Google Patents

Chemischer Dampfablagerungsapparat.

Info

Publication number
DE69010835T2
DE69010835T2 DE69010835T DE69010835T DE69010835T2 DE 69010835 T2 DE69010835 T2 DE 69010835T2 DE 69010835 T DE69010835 T DE 69010835T DE 69010835 T DE69010835 T DE 69010835T DE 69010835 T2 DE69010835 T2 DE 69010835T2
Authority
DE
Germany
Prior art keywords
vapor deposition
chemical vapor
deposition apparatus
chemical
vapor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69010835T
Other languages
English (en)
Other versions
DE69010835D1 (de
Inventor
Shinji Miyazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE69010835D1 publication Critical patent/DE69010835D1/de
Publication of DE69010835T2 publication Critical patent/DE69010835T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4402—Reduction of impurities in the source gas
DE69010835T 1989-10-30 1990-10-30 Chemischer Dampfablagerungsapparat. Expired - Fee Related DE69010835T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1279976A JPH0686661B2 (ja) 1989-10-30 1989-10-30 気相成長装置

Publications (2)

Publication Number Publication Date
DE69010835D1 DE69010835D1 (de) 1994-08-25
DE69010835T2 true DE69010835T2 (de) 1994-12-08

Family

ID=17618569

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69010835T Expired - Fee Related DE69010835T2 (de) 1989-10-30 1990-10-30 Chemischer Dampfablagerungsapparat.

Country Status (4)

Country Link
EP (1) EP0426105B1 (de)
JP (1) JPH0686661B2 (de)
KR (1) KR940007866B1 (de)
DE (1) DE69010835T2 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19920332B4 (de) * 1998-05-04 2010-10-21 Infineon Technologies Ag Prozeßreaktor zur Behandlung von Halbleitersubstraten und Verfahren zur Durchführung eines Prozesses

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5226438B2 (ja) * 2008-09-10 2013-07-03 株式会社日立国際電気 基板処理装置、半導体装置の製造方法及び基板処理方法
KR20190002318A (ko) * 2017-06-29 2019-01-08 가부시키가이샤 에바라 세이사꾸쇼 배기계 설비 시스템

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2008084B (en) * 1977-11-17 1982-07-28 Post Office Growth of semiconductor compounds

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19920332B4 (de) * 1998-05-04 2010-10-21 Infineon Technologies Ag Prozeßreaktor zur Behandlung von Halbleitersubstraten und Verfahren zur Durchführung eines Prozesses

Also Published As

Publication number Publication date
EP0426105A1 (de) 1991-05-08
JPH0686661B2 (ja) 1994-11-02
EP0426105B1 (de) 1994-07-20
JPH03146670A (ja) 1991-06-21
KR910008797A (ko) 1991-05-31
DE69010835D1 (de) 1994-08-25
KR940007866B1 (ko) 1994-08-26

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)
8339 Ceased/non-payment of the annual fee