DE3780489T2 - Abscheidungsverfahren. - Google Patents

Abscheidungsverfahren.

Info

Publication number
DE3780489T2
DE3780489T2 DE8787302300T DE3780489T DE3780489T2 DE 3780489 T2 DE3780489 T2 DE 3780489T2 DE 8787302300 T DE8787302300 T DE 8787302300T DE 3780489 T DE3780489 T DE 3780489T DE 3780489 T2 DE3780489 T2 DE 3780489T2
Authority
DE
Germany
Prior art keywords
deposition procedure
deposition
procedure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8787302300T
Other languages
English (en)
Other versions
DE3780489D1 (de
Inventor
Douglas Boyd Meakin
Nikolaos Alkiviadis N Economou
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Marconi UK Intellectual Property Ltd
Original Assignee
General Electric Co PLC
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co PLC, General Electric Co filed Critical General Electric Co PLC
Application granted granted Critical
Publication of DE3780489D1 publication Critical patent/DE3780489D1/de
Publication of DE3780489T2 publication Critical patent/DE3780489T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45561—Gas plumbing upstream of the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45557—Pulsed pressure or control pressure
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2217/00—Coatings on glass
    • C03C2217/20—Materials for coating a single layer on glass
    • C03C2217/28—Other inorganic materials
    • C03C2217/282—Carbides, silicides
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2218/00—Methods for coating glass
    • C03C2218/10—Deposition methods
    • C03C2218/15—Deposition methods from the vapour phase
    • C03C2218/152—Deposition methods from the vapour phase by cvd

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
DE8787302300T 1986-03-19 1987-03-18 Abscheidungsverfahren. Expired - Fee Related DE3780489T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB8606784A GB2193976B (en) 1986-03-19 1986-03-19 Process for depositing a polysilicon film on a substrate

Publications (2)

Publication Number Publication Date
DE3780489D1 DE3780489D1 (de) 1992-08-27
DE3780489T2 true DE3780489T2 (de) 1993-01-21

Family

ID=10594874

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8787302300T Expired - Fee Related DE3780489T2 (de) 1986-03-19 1987-03-18 Abscheidungsverfahren.

Country Status (5)

Country Link
US (1) US5026574A (de)
EP (1) EP0238315B1 (de)
JP (1) JP2565329B2 (de)
DE (1) DE3780489T2 (de)
GB (1) GB2193976B (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1328796C (en) * 1986-09-12 1994-04-26 Bernard Steele Meyerson Method and apparatus for low temperature, low pressure chemical vapor deposition of epitaxial silicon layers
GB2213835B (en) * 1987-12-18 1992-07-08 Gen Electric Co Plc Deposition apparatus
GB2213836B (en) * 1987-12-18 1992-08-26 Gen Electric Co Plc Vacuum deposition process
JP3491903B2 (ja) * 1990-05-18 2004-02-03 セイコーエプソン株式会社 薄膜半導体装置の製造方法
DE69233359T2 (de) * 1991-07-16 2005-06-02 Seiko Epson Corp. Verfahren zur herstellung einer halbleiter-dünnschicht mit einer chemischen gasphasen-beschichtungsanlage
US6054396A (en) * 1996-05-09 2000-04-25 Micron Technology, Inc. Semiconductor processing method of reducing thickness depletion of a silicide layer at a junction of different underlying layers
US6649543B1 (en) 2000-06-22 2003-11-18 Micron Technology, Inc. Methods of forming silicon nitride, methods of forming transistor devices, and transistor devices
US6686298B1 (en) * 2000-06-22 2004-02-03 Micron Technology, Inc. Methods of forming structures over semiconductor substrates, and methods of forming transistors associated with semiconductor substrates
US6833329B1 (en) 2000-06-22 2004-12-21 Micron Technology, Inc. Methods of forming oxide regions over semiconductor substrates
US6660657B1 (en) 2000-08-07 2003-12-09 Micron Technology, Inc. Methods of incorporating nitrogen into silicon-oxide-containing layers
US6878585B2 (en) 2001-08-29 2005-04-12 Micron Technology, Inc. Methods of forming capacitors
US6723599B2 (en) * 2001-12-03 2004-04-20 Micron Technology, Inc. Methods of forming capacitors and methods of forming capacitor dielectric layers
US20050062131A1 (en) * 2003-09-24 2005-03-24 Murduck James Matthew A1/A1Ox/A1 resistor process for integrated circuits
US20110056558A1 (en) * 2009-09-09 2011-03-10 Auria Solar Co., Ltd. Solar cell
CN103489762A (zh) * 2012-06-08 2014-01-01 胜华科技股份有限公司 形成多晶硅薄膜的方法
US8951921B2 (en) * 2012-06-08 2015-02-10 Wintek Corporation Method of forming thin film poly silicon layer and method of forming thin film transistor

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3112997A (en) * 1958-10-01 1963-12-03 Merck & Co Inc Process for producing pure crystalline silicon by pyrolysis
DE2240014C3 (de) * 1972-08-14 1981-04-16 Degussa Ag, 6000 Frankfurt Verfahren zur Hydrophobierung von hochdispersen Oxiden
US3900597A (en) * 1973-12-19 1975-08-19 Motorola Inc System and process for deposition of polycrystalline silicon with silane in vacuum
JPS5513426B2 (de) * 1974-06-18 1980-04-09
SE432162B (sv) * 1976-04-22 1984-03-19 Fujitsu Ltd Forfarande for att utifran en anga bringa en tunn film att tillvexa
FR2371524A1 (fr) * 1976-11-18 1978-06-16 Alsthom Atlantique Procede de depot d'une couche mince par decomposition d'un gaz dans un plasma
FR2372904A1 (fr) * 1976-11-19 1978-06-30 Ibm Composition de decapage du silicium polycristallin contenant de l'hydroxyde de tetramethylammonium et procede d'application
JPS53108767A (en) * 1977-03-04 1978-09-21 Nec Corp Growth method of polycrystalline silicon
US4100330A (en) * 1977-03-28 1978-07-11 Ppg Industries, Inc. Method for coating glass with silicon and a metal oxide and resulting product
US4129463A (en) * 1977-06-29 1978-12-12 The United States Of America As Represented By The United States Department Of Energy Polycrystalline silicon semiconducting material by nuclear transmutation doping
DE2904171A1 (de) * 1979-02-05 1980-08-14 Siemens Ag Verfahren zum herstellen von aus amorphem silizium bestehenden halbleiterkoerpern durch glimmentladung
JPS55113318A (en) * 1979-02-23 1980-09-01 Hitachi Ltd Manufacture of semiconductor device
JPS5617083A (en) * 1979-07-20 1981-02-18 Hitachi Ltd Semiconductor device and its manufacture
US4363828A (en) * 1979-12-12 1982-12-14 International Business Machines Corp. Method for depositing silicon films and related materials by a glow discharge in a disiland or higher order silane gas
JPS5842126B2 (ja) * 1980-10-31 1983-09-17 鐘淵化学工業株式会社 アモルファスシリコンの製造方法
US4443488A (en) * 1981-10-19 1984-04-17 Spire Corporation Plasma ion deposition process
FR2555206B1 (fr) * 1983-11-22 1986-05-09 Thomson Csf Procede de depot de silicium amorphe par decomposition thermique a basse temperature et dispositif de mise en oeuvre du procede
US4592933A (en) * 1984-06-29 1986-06-03 International Business Machines Corporation High efficiency homogeneous chemical vapor deposition
JPH0766909B2 (ja) * 1984-07-26 1995-07-19 新技術事業団 元素半導体単結晶薄膜の成長法

Also Published As

Publication number Publication date
EP0238315A1 (de) 1987-09-23
EP0238315B1 (de) 1992-07-22
JP2565329B2 (ja) 1996-12-18
US5026574A (en) 1991-06-25
GB2193976B (en) 1990-05-30
GB2193976A (en) 1988-02-24
GB8606784D0 (en) 1986-04-23
JPS62229931A (ja) 1987-10-08
DE3780489D1 (de) 1992-08-27

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8328 Change in the person/name/address of the agent

Free format text: PATENTANWAELTE REICHEL UND REICHEL, 60322 FRANKFURT

8327 Change in the person/name/address of the patent owner

Owner name: MARCONI UK INTELLECTUAL PROPERTY LTD., COVENTRY, G

8339 Ceased/non-payment of the annual fee