DE3780489D1 - Abscheidungsverfahren. - Google Patents
Abscheidungsverfahren.Info
- Publication number
- DE3780489D1 DE3780489D1 DE8787302300T DE3780489T DE3780489D1 DE 3780489 D1 DE3780489 D1 DE 3780489D1 DE 8787302300 T DE8787302300 T DE 8787302300T DE 3780489 T DE3780489 T DE 3780489T DE 3780489 D1 DE3780489 D1 DE 3780489D1
- Authority
- DE
- Germany
- Prior art keywords
- deposition procedure
- deposition
- procedure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000008021 deposition Effects 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45561—Gas plumbing upstream of the reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/24—Deposition of silicon only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45557—Pulsed pressure or control pressure
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2217/00—Coatings on glass
- C03C2217/20—Materials for coating a single layer on glass
- C03C2217/28—Other inorganic materials
- C03C2217/282—Carbides, silicides
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2218/00—Methods for coating glass
- C03C2218/10—Deposition methods
- C03C2218/15—Deposition methods from the vapour phase
- C03C2218/152—Deposition methods from the vapour phase by cvd
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Inorganic Chemistry (AREA)
- Electrodes Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB8606784A GB2193976B (en) | 1986-03-19 | 1986-03-19 | Process for depositing a polysilicon film on a substrate |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3780489D1 true DE3780489D1 (de) | 1992-08-27 |
DE3780489T2 DE3780489T2 (de) | 1993-01-21 |
Family
ID=10594874
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8787302300T Expired - Fee Related DE3780489T2 (de) | 1986-03-19 | 1987-03-18 | Abscheidungsverfahren. |
Country Status (5)
Country | Link |
---|---|
US (1) | US5026574A (de) |
EP (1) | EP0238315B1 (de) |
JP (1) | JP2565329B2 (de) |
DE (1) | DE3780489T2 (de) |
GB (1) | GB2193976B (de) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CA1328796C (en) * | 1986-09-12 | 1994-04-26 | Bernard Steele Meyerson | Method and apparatus for low temperature, low pressure chemical vapor deposition of epitaxial silicon layers |
GB2213835B (en) * | 1987-12-18 | 1992-07-08 | Gen Electric Co Plc | Deposition apparatus |
GB2213836B (en) * | 1987-12-18 | 1992-08-26 | Gen Electric Co Plc | Vacuum deposition process |
JP3491903B2 (ja) * | 1990-05-18 | 2004-02-03 | セイコーエプソン株式会社 | 薄膜半導体装置の製造方法 |
EP0552375B1 (de) * | 1991-07-16 | 2004-06-02 | Seiko Epson Corporation | Verfahren zur herstellung einer halbleiter-dünnschicht mit einer chemischen gasphasen-beschichtungsanlage |
US6174821B1 (en) * | 1996-05-09 | 2001-01-16 | Micron Technology, Inc. | Semiconductor processing method of depositing polysilicon |
US6833329B1 (en) | 2000-06-22 | 2004-12-21 | Micron Technology, Inc. | Methods of forming oxide regions over semiconductor substrates |
US6686298B1 (en) * | 2000-06-22 | 2004-02-03 | Micron Technology, Inc. | Methods of forming structures over semiconductor substrates, and methods of forming transistors associated with semiconductor substrates |
US6649543B1 (en) | 2000-06-22 | 2003-11-18 | Micron Technology, Inc. | Methods of forming silicon nitride, methods of forming transistor devices, and transistor devices |
US6660657B1 (en) | 2000-08-07 | 2003-12-09 | Micron Technology, Inc. | Methods of incorporating nitrogen into silicon-oxide-containing layers |
US6878585B2 (en) * | 2001-08-29 | 2005-04-12 | Micron Technology, Inc. | Methods of forming capacitors |
US6723599B2 (en) * | 2001-12-03 | 2004-04-20 | Micron Technology, Inc. | Methods of forming capacitors and methods of forming capacitor dielectric layers |
US20050062131A1 (en) * | 2003-09-24 | 2005-03-24 | Murduck James Matthew | A1/A1Ox/A1 resistor process for integrated circuits |
US20110056558A1 (en) * | 2009-09-09 | 2011-03-10 | Auria Solar Co., Ltd. | Solar cell |
CN103489762A (zh) * | 2012-06-08 | 2014-01-01 | 胜华科技股份有限公司 | 形成多晶硅薄膜的方法 |
EP2671965A3 (de) * | 2012-06-08 | 2014-03-12 | Wintek Corporation | Verfahren zur Herstellung einer dünnschichtigen Polysiliziumschicht und Verfahren zur Bildung eines Dünnschichttransistors |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3112997A (en) * | 1958-10-01 | 1963-12-03 | Merck & Co Inc | Process for producing pure crystalline silicon by pyrolysis |
DE2240014C3 (de) * | 1972-08-14 | 1981-04-16 | Degussa Ag, 6000 Frankfurt | Verfahren zur Hydrophobierung von hochdispersen Oxiden |
US3900597A (en) * | 1973-12-19 | 1975-08-19 | Motorola Inc | System and process for deposition of polycrystalline silicon with silane in vacuum |
JPS5513426B2 (de) * | 1974-06-18 | 1980-04-09 | ||
SE432162B (sv) * | 1976-04-22 | 1984-03-19 | Fujitsu Ltd | Forfarande for att utifran en anga bringa en tunn film att tillvexa |
FR2371524A1 (fr) * | 1976-11-18 | 1978-06-16 | Alsthom Atlantique | Procede de depot d'une couche mince par decomposition d'un gaz dans un plasma |
FR2372904A1 (fr) * | 1976-11-19 | 1978-06-30 | Ibm | Composition de decapage du silicium polycristallin contenant de l'hydroxyde de tetramethylammonium et procede d'application |
JPS53108767A (en) * | 1977-03-04 | 1978-09-21 | Nec Corp | Growth method of polycrystalline silicon |
US4100330A (en) * | 1977-03-28 | 1978-07-11 | Ppg Industries, Inc. | Method for coating glass with silicon and a metal oxide and resulting product |
US4129463A (en) * | 1977-06-29 | 1978-12-12 | The United States Of America As Represented By The United States Department Of Energy | Polycrystalline silicon semiconducting material by nuclear transmutation doping |
DE2904171A1 (de) * | 1979-02-05 | 1980-08-14 | Siemens Ag | Verfahren zum herstellen von aus amorphem silizium bestehenden halbleiterkoerpern durch glimmentladung |
JPS55113318A (en) * | 1979-02-23 | 1980-09-01 | Hitachi Ltd | Manufacture of semiconductor device |
JPS5617083A (en) * | 1979-07-20 | 1981-02-18 | Hitachi Ltd | Semiconductor device and its manufacture |
US4363828A (en) * | 1979-12-12 | 1982-12-14 | International Business Machines Corp. | Method for depositing silicon films and related materials by a glow discharge in a disiland or higher order silane gas |
JPS5842126B2 (ja) * | 1980-10-31 | 1983-09-17 | 鐘淵化学工業株式会社 | アモルファスシリコンの製造方法 |
US4443488A (en) * | 1981-10-19 | 1984-04-17 | Spire Corporation | Plasma ion deposition process |
FR2555206B1 (fr) * | 1983-11-22 | 1986-05-09 | Thomson Csf | Procede de depot de silicium amorphe par decomposition thermique a basse temperature et dispositif de mise en oeuvre du procede |
US4592933A (en) * | 1984-06-29 | 1986-06-03 | International Business Machines Corporation | High efficiency homogeneous chemical vapor deposition |
JPH0766909B2 (ja) * | 1984-07-26 | 1995-07-19 | 新技術事業団 | 元素半導体単結晶薄膜の成長法 |
-
1986
- 1986-03-19 GB GB8606784A patent/GB2193976B/en not_active Expired - Fee Related
-
1987
- 1987-03-17 JP JP62062345A patent/JP2565329B2/ja not_active Expired - Fee Related
- 1987-03-18 DE DE8787302300T patent/DE3780489T2/de not_active Expired - Fee Related
- 1987-03-18 EP EP87302300A patent/EP0238315B1/de not_active Expired
-
1989
- 1989-01-25 US US07/302,543 patent/US5026574A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JPS62229931A (ja) | 1987-10-08 |
EP0238315A1 (de) | 1987-09-23 |
DE3780489T2 (de) | 1993-01-21 |
US5026574A (en) | 1991-06-25 |
EP0238315B1 (de) | 1992-07-22 |
GB2193976B (en) | 1990-05-30 |
GB2193976A (en) | 1988-02-24 |
JP2565329B2 (ja) | 1996-12-18 |
GB8606784D0 (en) | 1986-04-23 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8328 | Change in the person/name/address of the agent |
Free format text: PATENTANWAELTE REICHEL UND REICHEL, 60322 FRANKFURT |
|
8327 | Change in the person/name/address of the patent owner |
Owner name: MARCONI UK INTELLECTUAL PROPERTY LTD., COVENTRY, G |
|
8339 | Ceased/non-payment of the annual fee |